www.fairchildsemi.com FS6S-SERIES FS6S0965R/FS6S0965RT/FS6S1265RB Fairchild Power Switch(FPS) Features • • • • • • • • • • • • • • • TO-3P-5L Wide Operating Frequency Range Up to 150Khz Lowest Cost SMPS Solution Lowest External Components Low Start up Current (max:170uA) Low Operating Current (max:15mA) Internal High Voltage SenseFET Built-in Auto Restart Circuit Over Voltage Protection (Auto Restart Mode) Over Load Protection (Auto Restart Mode) Over Current Protection With Latch Mode Internal Thermal Protection With Latch Mode Pulse By Pulse Over Current Limiting Internal Burst Mode Controller for Stand-by Mode Under Voltage Lockout With Hysteresis External Sync. Terminal 1 TO-220F-5L 1 1. Drain 2. Gnd 3. VCC 4. FeedBack 5. Sync. Internal Block Diagram 3 1 Vpp=5.8/7.2V + 5 Internal Bias OSC SYNC + Vref UVLO VREF Burst Mode Coltroller VFB - Vth=1V + S VCC - R Vth=11/12V _ QB Ron + Roff - 4 PWM 2.5R Ifb Idelay VREF + R VCC Vfb Offset Rsense + - OCL OLP Vth=7.5V VCC + - S OVP Vth=30V Uvlo Reset (VCC=9V) R Q Q S R Filter (130nsec) + - Vth=1V 2 TSD Power-on Reset (Tj=160℃) (VCC=6.5V) Rev.1.0.4 ©2001 Fairchild Semiconductor Corporation FS6S-SERIES FS6S0965R/FS6S0965RT/FS6S1265RB Absolute Maximum Ratings (Ta=25°C, unless otherwise specified) Characteristic Symbol Value Unit FS6S0965RT/FS6S0965R Drain to PKG Breakdown Voltage BVPKG Maximum Drain Voltage VD,MAX 650 V VDGR 650 V Gate-Source(GND) Voltage VGS ±30 V Drain Current Pulsed(1) IDM 36 ADC Continuous Drain Current (Tc = 25°C) ID 9 ADC Continuous Drain Current (Tc = 100°C) ID 7.2 ADC IAS(EAS) 25(950) A(mJ) VCC,MAX 35 V VFB -0.3 to VCC V VSS -0.3 to 10 V Drain-Gate Voltage(RGS=1MΩ) Single Pulsed Avalanch Current(Energy (2)) Maximum Supply Voltage Input Voltage Range PD (Watt H/S) Total Power Dissipation Derating FS6S0965RT 3500 FS6S0965RT 48 FS6S0965R 170 FS6S0965RT 0.385 FS6S0965R 1.33 V W W / °C Operating Junction Temperature. TJ +160 °C Operating Ambient Temperature. TA -25 to +85 °C TSTG -55 to +150 °C VD,MAX 650 V VDGR 650 V VGS ±30 V IDM 48 ADC ID 12 ADC ID 8.4 ADC IAS(EAS) 30(950) A(mJ) VCC,MAX 35 V Storage Temperature Range. FS6S1265RB Maximum Drain Voltage Drain-Gate Voltage(RGS=1MΩ) Gate-Source(GND) Voltage Drain Current Pulsed (1) Continuous Drain Current (Tc = 25°C) Continuous Drain Current (Tc = 100°C) Single Pulsed Avalanch Current(Energy Maximum Supply Voltage Input Voltage Range Total Power Dissipation Operating Junction Temperature. Operating Ambient Temperature. Storage Temperature Range. 2 (2) ) VFB -0.3 to VCC V VSS -0.3 to 10 V PD (Watt H/S) 240 W Derating 1.92 W / °C TJ +160 °C TA -25 to +85 °C TSTG -55 to +150 °C FS6S-SERIES FS6S0965R/FS6S0965RT/FS6S1265RB Electrical Characteristics (SFET Part) (Ta = 25°C unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Unit 650 - - V FS6S0965RT/FS6S0965R Drain Source Breakdown Voltage BVDSS VDS=Max., Rating, VGS=0V - - 200 µA Zero Gate Voltage Drain Current IDSS VDS= 0.8Max., Rating, VGS = 0V, TC = 125°C - - 300 µA Static Drain-Source On Resistance (1) RDS(on) VGS = 10V, ID = 4.5A - 1.1 1.2 Ω transconductance(1) gfs VDS = 50V, ID = 4.5A - - - S - 1300 - - 135 - - 25 - - 25 - - 75 - - 130 - - 70 - - 45 - - 8 - - 22 - Forward Input capacitance VGS = 0V, ID = 50µA Ciss Output capacitance Coss Reverse transfer capacitance Crss Turn on delay time td(on) Rise time tr Turn off delay time td(off) Fall time tf Total gate charge (gate-source+gate-drain) Qg Gate-source charge Qgs Gate-drain (Miller) charge Qgd VGS = 0V, VDS = 25V, f = 1MHz VDD = 0.5BVDSS, ID = 9.0A (MOSFET switching time are essentially independent of operating temperature) VGS = 10V, ID = 9.0A, VDS = 0.5BVDSS(MOSFET Switching time are Essentially independent of Operating temperature) pF nS nC FS6S1265RB Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Static Drain-Source On Resistance (1) (1) Forward transconductance BVDSS 650 - - V VDS=Max, Rating, VGS = 0V - - 200 µA IDSS VDS= 0.8Max, Rating, VGS = 0V, TC = 125°C - - 300 µA RDS(on) VGS = 10V, ID = 4.5A - 0.7 0.9 Ω gfs VDS = 50V, ID = 4.5A - - - S - 1820 - - 185 - - 32 - - 38 - - 120 - - 200 - - 100 - - 60 - - 10 - - 30 - Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Turn on delay time td(on) Rise time Turn off delay time Fall time tr td(off) tf Total gate charge (gate-source+gate-drain) Qg Gate-source charge Qgs Gate-drain (Miller) charge Qgd VGS = 0V, ID = 50µA VGS = 0V, VDS = 25V, f = 1MHz VDD = 0.5BVDSS, ID = 12.0A (MOSFET switching time are essentially independent of operating temperature) VGS = 10V, ID = 12.0A, VDS = 0.5BVDSS(MOSFET Switching time are Essentially independent of Operating temperature) pF nS nC 3 FS6S-SERIES FS6S0965R/FS6S0965RT/FS6S1265RB Electrical Characteristics (CONTROL Part) (VCC=16V, Tamb = 25°C unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Unit UVLO SECTION Start Threshold Voltage VSTART VFB=GND 14 15 16 V Stop Threshold Voltage VSTOP VFB=GND 8 9 10 V 22 25 28 kHz OSCILLATOR SECTION - Initial Frequency FOSC Voltage Stability FSTABLE 12V ≤ VCC ≤ 23V 0 1 3 % Temperature Stability (Note2) ∆FOSC -25°C ≤ Τa ≤ 85°C 0 ±5 ±10 % Maximum Duty Cycle DMAX - 92 95 98 % Minimum Duty Cycle DMIN - - - 0 % FEEDBACK SECTION Feedback Source Current IFB VFB=GND 0.7 0.9 1.1 mA Shutdown Feedback Voltage VSD VFB ≥ 6.9V 6.9 7.5 8.1 V IDELAY VFB=5V 1.6 2.0 2.4 µA Softstart Voltage VSS VFB=2V 4.7 5.0 5.3 V Softstart Current ISS VSS=0V 0.8 1.0 1.2 mA Shutdown Delay Current SYNC. & SOFTSTART SECTION Sync High Threshold Voltage(Note3) VSYNCH VCC=16V , VFB=5V - 7.2 - V Sync Low Threshold Voltage(Note3) VSYNCL VCC=16V , VFB=5V - 5.8 - V Burst Mode Low Threshold Voltage VBURL VFB=0V 10.4 11.0 11.6 V Burst Mode High Threshold Voltage VBURH VFB=0V 11.4 12.0 12.6 V VCC=10.5V 0.7 1.0 1.3 V BURST MODE SECTION Burst Mode Enable Feedback Voltage VBEN Burst Mode Peak Current Limit(Note4) IBURPK VCC=10.5V , VFB=0V 0.6 0.85 1.1 A FBUR VCC=10.5V , VFB=0V 40 50 60 kHz FS6S0965R 5.28 6.0 6.72 FS6S1265RB 7.04 8.0 8.96 27 30 33 Burst Mode Freqency CURRENT LIMIT(SELF-PROTECTION)SECTION Peak Current Limit (Note4) IOVER A PROTECTION SECTION VCC ≥ 27V Over Voltage Protcetion VOVP Over Current Latch voltage(Note3) VOCL - 0.9 1.0 1.1 V TSD - 140 160 - °C - 0.1 0.17 mA - 10 15 mA Thermal Shutdown Tempature(Note2) V TOTAL DEVICE SECTION Start Up Current Operating Supply Current(Note1) ISTART VFB = GND, VCC = 14V IOP VFB = GND, VCC = 16V IOP(MIN) VFB = GND, VCC = 12V IOP(MAX) VFB = GND, VCC = 30V Notes: 1. These parameters is the Current Flowing in the Control IC. 2. These parameters, although guaranteed, are not 100% tested in production 3. These parameters, although guaranteed, are tested in EDS(wafer test) process 4. These parameters are indicated Inductor Current. 4 FS6S-SERIES FS6S0965R/FS6S0965RT/FS6S1265RB Typical Performance Characteristics [mA] 0.15 Istart Iop [mA] 10.2 10.0 0.12 9.8 0.09 9.6 0.06 9.4 0.03 9.2 9.0 0.00 -25 0 25 50 75 100 125 -25 150 0 25 50 Figure 1. Start Up Current vs. Temp. [V] 16.0 75 100 125 150 Temp Temp Figure 2. Operating Supply Current vs. Temp. Vstart [V] 9.10 15.6 Vstop 9.06 15.2 9.02 14.8 8.98 14.4 8.94 14.0 13.6 8.90 -25 0 25 50 75 100 125 150 -25 Temp [kHz] 25 50 75 100 125 150 Temp Figure 3. Start Threshold Voltage vs. Temp. 26.0 0 Fosc Figure 4. Stop Threshold Voltage vs. Temp. [%] 96.0 25.2 95.6 24.4 95.2 23.6 94.8 22.8 94.4 22.0 Dmax 94.0 -25 0 25 50 75 100 125 Temp Figure 5. Initial Frequency vs. Temp. 150 -25 0 25 50 75 100 125 150 Temp Figure 6. Maximum Duty vs. Temp. 5 FS6S-SERIES FS6S0965R/FS6S0965RT/FS6S1265RB Typical Performance Characteristics (Continued) [V] Voff 0.50 Ifb [mA] 1.05 1.00 0.95 0.40 0.90 0.30 0.85 0.20 0.80 0.10 0.75 -25 0 25 50 75 100 125 150 -25 Temp [uA] 50 75 100 125 150 Figure 8. Feedback Source Current vs. Temp. Idelay [V] 7.60 2.02 7.56 1.94 7.52 1.86 7.48 1.78 7.44 1.70 Vsd 7.40 -25 0 25 50 75 100 125 150 Temp [V] 5.10 -25 0 25 50 75 100 125 150 Temp Figure 9. Shutdown Delay Current vs. Temp. Figure 10. Shutdown Feedback Voltage vs. Temp. Vss [V] 31.0 5.06 30.6 5.02 30.2 4.98 29.8 4.94 29.4 Vovp 29.0 4.90 -25 0 25 50 75 100 125 Temp Figure 11. Softstart Voltage vs. Temp. 6 25 Temp Figure 7. Feedback Offset Voltage vs. Temp. 2.10 0 150 -25 0 25 50 75 100 125 150 Temp Figure 12. Over Voltage Protection vs. Temp. FS6S-SERIES FS6S0965R/FS6S0965RT/FS6S1265RB Typical Performance Characteristics (Continued) [V] 11.2 Vburl Vburh [V] 12.3 12.2 11.1 12.1 11.0 12.0 11.9 10.9 11.8 10.8 11.7 -25 0 25 50 75 100 125 150 Temp -25 [kHz] 25 50 75 100 125 150 Temp Figure 13. Burst Mode Low Voltage vs. Temp. 53.0 0 Figure 14. Burst Mode High Voltage vs. Temp. Fbur Vben [V] 1.60 51.0 1.20 49.0 0.80 47.0 0.40 45.0 0.00 43.0 -25 0 25 50 Temp 75 100 125 Figure 15. Burst Mode Frequency vs. Temp. [A] 0.98 0 25 50 Temp 75 100 125 150 Figure 16. Burst Mode Enable Voltage vs. Temp. Ibur_pk 0.95 6.10 0.92 6.00 0.89 5.90 0.86 5.80 Iover [A] 6.20 5.70 0.83 -25 0 25 50 Temp 75 100 125 150 Figure 17. Burst Mode Peak Current vs. Temp. 7 -25 150 -25 0 25 50 Temp 75 100 125 Figure 18. Peak Current Limit vs. Temp. 150 FS6S-SERIES FS6S0965R/FS6S0965RT/FS6S1265RB Package Dimensions TO-3P-5L 8 FS6S-SERIES FS6S0965R/FS6S0965RT/FS6S1265RB Package Dimensions (Continued) TO-3P-5L (Forming) 9 FS6S-SERIES FS6S0965R/FS6S0965RT/FS6S1265RB Package Dimensions (Continued) TO-220F-5L 10 FS6S-SERIES FS6S0965R/FS6S0965RT/FS6S1265RB Package Dimensions (Continued) TO-220F-5L(Forming) 11 FS6S-SERIES FS6S0965R/FS6S0965RT/FS6S1265RB TOP Mark and Pinout Information F SXXYY MARKING Pin No. Symbol 1 Drain SenseFET Drain 2 GND Ground (Source) 3 VCC Control Part Supply Input 4 F/B PWM Non Inverting Input 5 S/S Soft start & External Sync. 1 Device FS6S0965R FS6S0965RT FS6S1265R Marking 6S0965R 6S1265RB Notes: (1) F : Fairchild Semiconductor (2) 6S0965R, 6S1265RB : Device Marking Name (3) S : Plant Code (FPS: S) (4) XX : Patweek Based on Fairchild Semiconductor Work Month Calender (5) YY : Last Two Digit of Calender Year 12 Description FS6S-SERIES FS6S0965R/FS6S0965RT/FS6S1265RB Ordering Information Product Number FS6S0965R-TU FS6S0965R-YDTU FS6S0965RT-TU FS6S0965RT-YDTU FS6S1265RB-TU FS6S1265RB-YDTU TU : Non Forming Type YDTU : Forming Type 13 Package TO-3P-5L TO-3P-5L(Forming) TO-220F-5L TO-220F-5L(Forming) TO-3P-5L TO-3P-5L(Forming) Marking Code BVdss Rds(on) 6S0965R 650V 1.1Ω 6S0965R 650V 1.1Ω 6S1265RB 650V 0.7Ω FS6S-SERIES FS6S0965R/FS6S0965RT/FS6S1265RB DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. www.fairchildsemi.com 10/29/01 0.0m 001 2001 Fairchild Semiconductor Corporation