FAIRCHILD KA1H0365R-TU

www.fairchildsemi.com
KA1L0365R/KA1M0365R/KA1H0365R
Fairchild Power Switch(FPS)
Features
Description
• Precision Fixed Operating Frequency
• KA1L0365R(50kHz), KA1M0365R(67kHz),
KA1H0365R(100kHz)
• Pulse by Pulse Over Current Limiting
• Over Load Protection
• Over Voltage Protection (Min. 23V)
• Internal Thermal Shutdown Function
• Under Voltage Lockout
• Internal High Voltage Sense FET
• Auto Restart
The Fairchild Power Switch(FPS) product family is specially
designed for an off line SMPS with minimal external
components. The Fairchild Power Switch(FPS) consist of
high voltage power SenseFET and current mode PWM
controller IC. PWM controller features integrated fixed
oscillator, under voltage lock out, leading edge blanking,
optimized gate turn-on/turn-off driver, thermal shut down
protection, over voltage protection, temperature compensated
precision current sources for loop compensation and fault
protection circuit. compared to discrete MOSFET and
controller or RCC switching converter solution, a Fairchild
Power Switch(FPS) can reduce total component count,
design size, weight and at the same time increase &
efficiency, productivity, and system reliability. It has a basic
platform well suited for cost effective design in either a
flyback converter or a forward converter.
TO-220F-4L
1
1. GND 2. DRAIN 3. VCC 4. FB
Internal Block Diagram
#3 VCC
32V
5V
Vref
Internal
bias
#2 DRAIN
SFET
Good
logic
OSC
9V
5µA
S
1mA
R
−
#4 FB
2.5R
1R
+
−
+
25V
L.E.B
0.1V
+
7.5V
−
Q
S
Thermal S/D
R
Q
#1 GND
Power on reset
OVER VOLTAGE S/D
Rev.1.0.2
©2003 Fairchild Semiconductor Corporation
KA1L0365R/KA1M0365R/KA1H0365R
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
VD,MAX
650
V
VDGR
650
V
Gate-Source (GND) Voltage
VGS
±30
V
Drain Current Pulsed (2)
IDM
12
ADC
Single Pulsed Avalanche Energy (3)
EAS
358
mJ
Continuous Drain Current (TC=25°C)
ID
3.0
ADC
Continuous Drain Current (TC=100°C)
ID
2.4
ADC
VCC,MAX
30
V
VFB
-0.3 to VSD
V
PD
75
W
Darting
0.6
W/°C
TA
-25 to +85
°C
TSTG
-55 to +150
°C
Maximum Drain Voltage
(1)
Drain-Gate Voltage (RGS=1MΩ)
Maximum Supply Voltage
Input Voltage Range
Total Power Dissipation
Operating Ambient Temperature
Storage Temperature
Notes:
1. Tj = 25°C to 150°C
2. Repetitive rating: Pulse width limited by maximum junction temperature
3. L = 41mH, VDD = 50V, RG = 25Ω, starting Tj = 25°C
2
KA1L0365R/KA1M0365R/KA1H0365R
Electrical Characteristics (SFET part)
(Ta=25°C unless otherwise specified)
Parameter
Symbol
Condition
Min.
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=50µA
650
-
-
V
VDS=Max., Rating,
VGS=0V
-
-
50
µA
VDS=0.8Max., Rating,
VGS=0V, TC=125°C
-
-
200
µA
RDS(ON)
VGS=10V, ID=1.5A
-
3.6
4.5
Ω
gfs
VDS=50V, ID=1.5A
2.0
-
-
S
-
720
-
-
40
-
-
40
-
-
150
-
-
100
-
-
150
-
-
42
-
-
-
34
-
7.3
-
-
13.3
-
Zero Gate Voltage Drain Current
Static Drain-Source on Resistance (Note)
Forward Transconductance
(Note)
IDSS
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Turn on Delay Time
td(on)
Rise Time
Turn Off Delay Time
Fall Time
tr
td(off)
tf
Total Gate Charge
(Gate-Source+Gate-Drain)
Qg
Gate-Source Charge
Qgs
Gate-Drain (Miller) Charge
Qgd
VGS=0V, VDS=25V,
f=1MHz
VDD=0.5BVDSS, ID=3.0A
(MOSFET switching
time are essentially
independent of
operating temperature)
VGS=10V, ID=3.0A,
VDS=0.5BVDSS (MOSFET
switching time are
essentially independent of
operating temperature)
Typ. Max. Unit
pF
nS
nC
Note:
1. Pulse test: Pulse width ≤ 300µS, duty cycle ≤ 2%
1
2. S = ---R
3
KA1L0365R/KA1M0365R/KA1H0365R
Electrical Characteristics (Control Part) (Continued)
(Ta=25°C unless otherwise specified)
Parameter
Symbol
Condition
Min.
Typ.
Max.
Unit
Start Threshold Voltage
VSTART
-
14
15
16
V
Stop Threshold Voltage
VSTOP
After turn on
9
10
11
V
KA1L0365R
45
50
55
KA1M0365R
61
67
73
KA1H0365R
90
100
110
-
±5
±10
UVLO SECTION
OSCILLATOR SECTION
Initial Accuracy
FOSC
Frequency Change With Temperature
(2)
Maximum Duty Cycle
∆F/∆T
Dmax
-25°C ≤ Ta ≤ +85°C
KA1L0365R
74
77
80
KA1M0365R
74
77
80
KA1H0365R
64
67
70
Ta=25°C, 0V ≤ Vfb ≤ 3V
0.7
0.9
1.1
kHz
%
%
FEEDBACK SECTION
Feedback Source Current
Shutdown Feedback Voltage
Shutdown Delay Current
IFB
mA
VSD
-
6.9
7.5
8.1
V
Idelay
Ta=25°C, 5V ≤ Vfb ≤ VSD
4.0
5.0
6.0
µA
Ta=25°C
4.80
5.00
5.20
V
-
0.3
0.6
mV/°C
1.89
2.15
2.41
A
REFERENCE SECTION
Output Voltage (1)
Temperature Stability
Vref
(1)(2)
Vref/∆T
-25°C ≤ Ta ≤ +85°C
CURRENT LIMIT (SELF-PROTECTION) SECTION
Peak Current Limit
IOVER
Max. inductor current
PROTECTION SECTION
Thermal Shutdown Temperature (Tj) (1)
Over Voltage Protection Voltage
TSD
-
140
160
-
°C
VOVP
-
23
25
28
V
TOTAL DEVICE SECTION
Start-Up Current
ISTART
VCC=14V
0.1
0.3
0.4
mA
Operating Supply Current
(Control Part Only)
IOP
Ta=25°C
6
12
18
mA
VCC Zener Voltage
VZ
ICC=20mA
30
32.5
35
V
Note:
1. These parameters, although guaranteed, are not 100% tested in production
2. These parameters, although guaranteed, are tested in EDS (wafer test) process
4
KA1L0365R/KA1M0365R/KA1H0365R
Typical Performance Characteristics
(These characteristic graphs are normalized at Ta=25°C)
Fig.2 Feedback Source Current
Fig.1 Operating Frequency
1.2
1.15
1.1
1.05
Fosc 1
0.95
0.9
0.85
0.8
-25
0
25
50
75
100 125 150
1.2
1.15
1.1
1.05
IIfb
FB 1
0.95
0.9
0.85
0.8
-25
0
25
Temperature [°C]
Figure 1. Operating Frequency
Fig.3 Operating Current
1.2
1.15
1.1
1.05
lOP 1
Iop
0.95
0.9
0.85
0.8
-25
100
125 150
Fig.4 Max Inductor Current
1.1
1.05
IIpeak
over 1
0.95
0.9
0.85
0
25
50
75
100 125 150
0.8
-25
0
25
50
75
100 125 150
Temperature [°C]
Figure 3. Operating Supply Current
Figure 4. Peak Current Limit
Fig.5 Start up Current
Fig.6 Start Threshold Voltage
1.15
1.1
1.3
1.05
1.1
IIstart
ST
V
th(H) 1
Vstart
0.9
0.95
0.7
0.5
-25
75
Figure 2. Feedback Source Current
Temperature [°C]
1.5
50
Temperature [°C]
0.9
0
25
50
75
100 125 150
Temperature [°C]
Figure 5. Start up Current
0.85
-25
0
25
50
75
100 125 150
Temperature [°C]
Figure 6. Start Threshold Voltage
5
KA1L0365R/KA1M0365R/KA1H0365R
Typical Performance Characteristics (Continued)
(These characteristic graphs are normalized at Ta=25°C)
Fig.7 Stop Threshold Voltage
1.15
Fig.8 Maximum Duty Cycle
1.15
1.1
1.1
1.05
1.05
Vth(L) 1
Vstop
Dmax 1
0.95
0.95
0.9
0.9
0.85
-25
0
25
50
75
100 125 150
0.85
-25
0
Temperature [°C]
Figure 7. Stop Threshold Voltage
50
75
100 125 150
Figure 8. Maximum Duty Cycle
Fig.10 Shutdown Feedback Voltage
Fig.9 Vcc Zener Voltage
1.15
1.2
1.15
1.1
1.05
Vz 1
0.95
0.9
0.85
0.8
-25
1.1
1.05
Vsd 1
0.95
0.9
0
25
50
75
100 125 150
0.85
-25
0
Temperature [°C]
50
75
100 125 150
Figure 10. Shutdown Feedback Voltage
Fig.11 Shutdown Delay Current
1.2
1.15
1.1
1.05
Idelay 1
0.95
0.9
0.85
0.8
-25
25
Temperature [°C]
Figure 9. VCC Zener Voltage
Fig.12 Over Voltage Protection
1.15
1.1
1.05
Vovp 1
0.95
0.9
0
25
50
75
100 125 150
Temperature [°C]
Figure 11. Shutdown Delay Current
6
25
Temperature [°C]
0.85
-25
0
25
50
75
100 125 150
Temperature [°C]
Figure 12. Over Voltage Protection
KA1L0365R/KA1M0365R/KA1H0365R
Typical Performance Characteristics (Continued)
(These characteristic groups are normalized at Ta=25°C)
Fig.14 Drain Source Turn-on
Resistance
2.5
2
1.5
( )1
Rdson
0.5
0
-25
0
25
50
75
100 125 150
Temperature [°C]
Figure 13. Static Drain-Source on Resistance
7
KA1L0365R/KA1M0365R/KA1H0365R
Package Dimensions
TO-220F-4L
8
KA1L0365R/KA1M0365R/KA1H0365R
Package Dimensions (Continued)
TO-220F-4L(Forming)
9
KA1L0365R/KA1M0365R/KA1H0365R
Ordering Information
Product Number
KA1L0365R-TU
KA1L0365R-YDTU
KA1M0365R-TU
KA1M0365R-YDTU
KA1H0365R-TU
KA1H0365R-YDTU
Package
TO-220F-4L
TO-220F-4L(Forming)
TO-220F-4L
TO-220F-4L(Forming)
TO-220F-4L
TO-220F-4L(Forming)
Rating
Fosc
650V, 3A
50kHz
650V, 3A
67kHz
650V, 3A
100kHz
TU : Non Forming Type
YDTU : Forming Type
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER
DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES
OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR
CORPORATION. As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, and (c) whose failure to
perform when properly used in accordance with
instructions for use provided in the labeling, can be
reasonably expected to result in a significant injury of the
user.
2. A critical component in any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
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8/25/03 0.0m 001
Stock#DSxxxxxxxx
 2003 Fairchild Semiconductor Corporation