BUK91/9907-55ATE TrenchPLUS logic level FET Rev. 01 — 7 February 2002 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on state resistance and TrenchPLUS diodes for clamping, ElectroStatic Discharge (ESD) protection and temperature sensing. Product availability: BUK9107-55ATE in SOT426 (D2-PAK) BUK9907-55ATE in SOT263B. 2. Features ■ ■ ■ ■ Typical on-state resistance 5.8 mΩ Q101 compliant ESD protection Monolithically integrated temperature sensor for overload protection. 3. Applications ■ Automotive and power switching: ◆ 12 V and 24 V high power motor drives (e.g. Electrical Power Assisted Steering (EPAS)) ◆ Protected drive for lamps. 4. Pinning information Table 1: Pinning - SOT426 and SOT263B simplified outline and symbol Pin Description 1 gate (g) 2 anode (a) 3 drain (d) 4 cathode (k) 5 source (s) mb mounting base; connected to drain (d) Simplified outline Symbol mb d a s k mb g 1 2 3 4 5 MBL317 Front view SOT426 (D2-PAK) MBK127 1 5 MBL263 SOT263B BUK91/9907-55ATE Philips Semiconductors TrenchPLUS logic level FET 5. Quick reference data Table 2: Quick reference data Symbol Parameter Conditions Typ Max Unit VDS drain-source voltage (DC) Tj = 25 °C - 55 V ID drain current (DC) Tmb = 25 °C; VGS = 5 V - 140 A Ptot total power dissipation Tmb = 25 °C - 272 W Tj junction temperature - 175 °C RDSon drain-source on-state resistance Tj = 25 °C; VGS = 5 V; ID = 50 A 5.8 7 mΩ Tj = 25 °C; VGS = 4.5 V; ID = 50 A 6 7.7 mΩ Tj = 25 °C; VGS = 10 V; ID = 50 A 5.2 6.2 mΩ VF temperature sense diode forward voltage Tj = 25 °C; IF = 250 µA 658 668 mV SF temperature sense diode temperature coefficient −55 °C < Tj < 175 °C; IF = 250 µA −1.54 −1.68 mV/K © Koninklijke Philips Electronics N.V. 2002. All rights reserved. 9397 750 09138 Product data Rev. 01 — 7 February 2002 2 of 17 BUK91/9907-55ATE Philips Semiconductors TrenchPLUS logic level FET 6. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions VDS drain-source voltage (DC) VDGS drain-gate voltage (DC) VGS gate-source voltage (DC) ID drain current (DC) Min Max Unit - 55 V - 55 V [1] - ±15 V Tmb = 25 °C; VGS = 5 V; Figure 2 and 3 [2] - 140 A [3] - 75 A Tmb = 100 °C; VGS = 5 V; Figure 2 [3] - 75 A IDM drain current (peak value) Tmb = 25 °C; pulsed; tp ≤ 10 µs; Figure 3 - 560 A Ptot total power dissipation Tmb = 25 °C; Figure 1 - 272 W IGS(CL) gate-source clamping current continuous - 10 mA tp = 5 ms; δ = 0.01 - 50 mA Visol(FET-TSD) FET to temperature sense diode isolation voltage - ±100 V Tstg storage temperature −55 +175 °C Tj junction temperature −55 +175 °C [2] - 140 A [3] - 75 A Source-drain diode IDR IDRM reverse drain current (DC) Tmb = 25 °C pulsed reverse drain current Tmb = 25 °C; pulsed; tp ≤ 10 µs - 560 A non-repetitive drain-source clamping energy unclamped inductive load; ID = 75 A; VDS ≤ 55 V; VGS = 5 V; RGS = 50 Ω; starting Tj = 25 °C - 500 mJ Human Body Model; C = 100 pF; R = 1.5 kΩ - 6 kV Clamping EDS(CL)S Electrostatic discharge Vesd electrostatic discharge voltage; pins 1, 3, 5 [1] [2] [3] Voltage is limited by clamping Current is limited by power dissipation chip rating Continuous current is limited by package. © Koninklijke Philips Electronics N.V. 2002. All rights reserved. 9397 750 09138 Product data Rev. 01 — 7 February 2002 3 of 17 BUK91/9907-55ATE Philips Semiconductors TrenchPLUS logic level FET 03na19 120 03ne74 150 ID Pder (A) 125 (%) 80 100 75 Capped at 75 A due to package 40 50 25 0 0 0 50 100 150 200 Tmb ( C) 25 P tot P der = ----------------------- × 100% P ° 50 75 100 125 150 175 200 Tmb (oC) VGS ≥ 5 V tot ( 25 C ) Fig 1. Normalized total power dissipation as a function of mounting base temperature. Fig 2. Continuous drain current as a function of mounting base temperature. 03nf55 103 ID (A) RDSon = VDS/ID tp = 10 us 102 100 us Capped at 75 A due to package 1 ms DC 10 ms 10 100 ms 1 1 102 10 VDS (V) Tmb = 25 °C; IDM single pulse. Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage. © Koninklijke Philips Electronics N.V. 2002. All rights reserved. 9397 750 09138 Product data Rev. 01 — 7 February 2002 4 of 17 BUK91/9907-55ATE Philips Semiconductors TrenchPLUS logic level FET 7. Thermal characteristics Table 4: Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-a) thermal resistance from junction to ambient vertical in still air; SOT263B package - - 60 K/W mounted on printed circuit board; minimum footprint; SOT426 package - - 50 K/W Figure 4 - - 0.55 K/W Rth(j-mb) thermal resistance from junction to mounting base 7.1 Transient thermal impedance 03ne76 1 Z th(j-mb) (K/W) δ = 0.5 10-1 0.2 0.1 0.05 δ= P 10-2 0.02 Single Shot tp T t tp T 10-3 10-6 10-5 10-4 10-3 10-2 10-1 1 tp (s) 10 Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration. © Koninklijke Philips Electronics N.V. 2002. All rights reserved. 9397 750 09138 Product data Rev. 01 — 7 February 2002 5 of 17 BUK91/9907-55ATE Philips Semiconductors TrenchPLUS logic level FET 8. Characteristics Table 5: Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = 0.25 mA; VGS = 0 V Tj = −55 °C VGS(th) IDSS 55 - - V 50 - - V gate-source threshold voltage ID = 1 mA; VDS = VGS; Figure 9 drain-source leakage current Tj = 25 °C 1 1.5 2 V Tj = 175 °C 0.5 - - V Tj = −55 °C - - 2.3 V Tj = 25 °C - 0.1 10 µA Tj = 175 °C - - 250 µA VDS = 55 V; VGS = 0 V V(BR)GSS gate-source breakdown voltage IG = ±1 mA; −55 °C < Tj < 175 °C 12 15 - V IGSS gate-source leakage current VGS = ±5 V; VDS = 0 V - 5 1000 nA RDSon drain-source on-state resistance VGS = 5 V; ID = 50 A; Figure 7 and 8 - 5.8 7 mΩ - - 14 mΩ Tj = 175 °C VGS = 4.5 V; ID = 50 A - 6 7.7 mΩ VGS = 10 V; ID = 50 A - 5.2 6.2 mΩ VF temperature sense diode forward voltage IF = 250 µA 648 658 668 mV SF temperature sense diode temperature coefficient IF = 250 µA; −55 °C < Tj < 175 °C −1.4 −1.54 −1.68 mV/K Vhys temperature sense diode forward voltage hysteresis 125 µA < IF < 250 µA 25 32 50 mV VGS = 5 V; VDD = 44 V; ID = 50 A; Figure 14 - 108 - nC - 15 - nC - 47 - nC VGS = 0 V; VDS = 25 V; f = 1 MHz; Figure 12 - 5836 - pF - 958 - pF - 595 - pF VDD = 30 V; RL = 1.2 Ω; VGS = 5 V; RG = 10 Ω - 51 - ns - 202 - ns Dynamic characteristics Qg(tot) total gate charge Qgs gate-to-source charge Qgd gate-to-drain (Miller) charge Ciss input capacitance Coss output capacitance Crss reverse transfer capacitance td(on) turn-on delay time tr rise time td(off) turn-off delay time - 341 - ns tf fall time - 207 - ns © Koninklijke Philips Electronics N.V. 2002. All rights reserved. 9397 750 09138 Product data Rev. 01 — 7 February 2002 6 of 17 BUK91/9907-55ATE Philips Semiconductors TrenchPLUS logic level FET Table 5: Characteristics…continued Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Ld internal drain inductance from upper edge of drain mounting base to centre of die - 2.5 - nH Ls internal source inductance from source lead to source bond pad - 7.5 - nH Source-drain diode VSD source-drain (diode forward) voltage IS = 25 A; VGS = 0 V; Figure 17 - 0.85 1.2 V trr reverse recovery time - 85 - ns Qr recovered charge IS = 20 A; dIS/dt = −100 A/µs VGS = −10 V; VDS = 30 V - 250 - nC © Koninklijke Philips Electronics N.V. 2002. All rights reserved. 9397 750 09138 Product data Rev. 01 — 7 February 2002 7 of 17 BUK91/9907-55ATE Philips Semiconductors TrenchPLUS logic level FET 03ne77 ID 400 (A) 350 4.2 6 03ne79 25 RDSon (mΩ) 4.6 4.4 V GS = 5 V 20 300 4 10 250 3.8 15 3.6 200 3.4 150 10 3.2 3 100 2.8 50 2.6 2.4 2.2 0 0 2 4 6 8 5 0 2 10 VDS (V) Tj = 25 °C; tp = 300 µs 4 6 8 V 10 GS (V) Tj = 25 °C; ID = 50 A Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values. Fig 6. Drain-source on-state resistance as a function of gate-source voltage; typical values. 03ne89 2 handbook, halfpage 03ne78 16 RDSon (mΩ) VGS = 3 V a 3.6 3.2 14 3.8 1.5 4 3.4 12 1 10 0.5 5 8 10 6 0 50 100 150 200 0 -60 250 300 ID (A) Tj = 25 °C; tp = 300µs 60 120 Tj (˚C) 180 R DSon a = ---------------------------R DSon ( 25 °C ) Fig 7. Drain-source on-state resistance as a function of drain current; typical values. Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature. © Koninklijke Philips Electronics N.V. 2002. All rights reserved. 9397 750 09138 Product data 0 Rev. 01 — 7 February 2002 8 of 17 BUK91/9907-55ATE Philips Semiconductors TrenchPLUS logic level FET 03na17 2.5 VGS(th) (V) 2 03na18 10-1 ID (A) 10-2 max typ 10-3 1.5 min 1 10-4 0.5 10-5 min typ max 10-6 0 -60 -20 20 60 100 140 180 Tj (oC) 0 0.5 1 1.5 2 2.5 3 V (V) GS Tj = 25 °C; VDS = VGS ID = 1 mA; VDS = VGS Fig 9. Gate-source threshold voltage as a function of junction temperature. Fig 10. Sub-threshold drain current as a function of gate-source voltage. 03ne81 140 gfs (S) 120 03ne86 16000 C (pF) 14000 12000 100 10000 80 8000 60 6000 Ciss 40 4000 20 2000 0 0 0 20 40 60 80 I (A) 100 D Tj = 25 °C; VDS = 25 V 10-2 1 10 VDS (V) VGS = 0 V; f = 1 MHz Fig 11. Forward transconductance as a function of drain current; typical values. Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values. © Koninklijke Philips Electronics N.V. 2002. All rights reserved. 9397 750 09138 Product data 10-1 Coss Crss 102 Rev. 01 — 7 February 2002 9 of 17 BUK91/9907-55ATE Philips Semiconductors TrenchPLUS logic level FET 03ne80 100 ID 03nf65 5 (A) VGS (V) 80 4 VDS = 14 V 60 3 VDS = 44 V Tj = 175 ºC 40 2 20 1 Tj = 25 ºC 0 0 0.0 1.0 2.0 VGS (V) 3.0 0 20 40 80 100 120 QG (nC) Tj = 25 °C; ID = 50 A VDS = 25 V Fig 13. Transfer characteristics: drain current as a function of gate-source voltage; typical values. 03ne84 700 VF (mV) Fig 14. Gate-source voltage as a function of turn-on gate charge; typical values. 03ne85 1.70 -SF (mV/K) 1.65 600 max 1.60 typ 1.55 500 1.50 1.45 400 min 1.40 0 50 100 150 Tj (ºC) 200 IF = 250 µA 645 650 655 660 665 670 675 VF (mV) VF at Tj = 25 °C; IF = 250 µA Fig 15. Forward voltage of temperature sense diode as a function of junction temperature; typical values. Fig 16. Temperature coefficient of temperature sense diode as a function of forward voltage; typical values. © Koninklijke Philips Electronics N.V. 2002. All rights reserved. 9397 750 09138 Product data 60 Rev. 01 — 7 February 2002 10 of 17 BUK91/9907-55ATE Philips Semiconductors TrenchPLUS logic level FET 03ne88 100 IS (A) 80 Tj = 175 ºC 60 40 Tj = 25 ºC 20 0 0.0 0.5 1.0 VSD (V) 1.5 VGS = 0 V Fig 17. Reverse diode current as a function of reverse diode voltage; typical values. © Koninklijke Philips Electronics N.V. 2002. All rights reserved. 9397 750 09138 Product data Rev. 01 — 7 February 2002 11 of 17 BUK91/9907-55ATE Philips Semiconductors TrenchPLUS logic level FET 9. Package outline Plastic single-ended surface mounted package (Philips version of D2-PAK); 5 leads (one lead cropped) SOT426 A A1 E D1 mounting base D HD 3 1 2 4 e e Lp 5 b e c e Q 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b c D max. D1 E e Lp HD Q mm 4.50 4.10 1.40 1.27 0.85 0.60 0.64 0.46 11 1.60 1.20 10.30 9.70 1.70 2.90 2.10 15.80 14.80 2.60 2.20 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 98-12-14 99-06-25 SOT426 Fig 18. SOT426. © Koninklijke Philips Electronics N.V. 2002. All rights reserved. 9397 750 09138 Product data Rev. 01 — 7 February 2002 12 of 17 BUK91/9907-55ATE Philips Semiconductors TrenchPLUS logic level FET Plastic single-ended package; heatsink mounted; 1 mounting hole; 5-lead TO-220 SOT263B E p1 A ∅p A1 q D1 mounting base D L1 Q L2 m L 1 5 e b c w M 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b c D D1 E e L mm 4.5 4.1 1.39 1.27 0.85 0.70 0.7 0.4 15.8 15.2 6.4 5.9 10.3 9.7 1.7 15.0 13.5 L1 (1) 2.4 1.6 (2) L2 0.5 m ∅p p1 q Q w 0.8 0.6 3.8 3.6 4.3 4.1 3.0 2.7 2.6 2.2 0.4 Notes 1. Terminal dimensions are uncontrolled in this zone. 2. Positional accuracy of the terminals is controlled in this zone. OUTLINE VERSION SOT263B REFERENCES IEC JEDEC EIAJ 5-lead TO-220 EUROPEAN PROJECTION ISSUE DATE 01-01-11 Fig 19. SOT263B. © Koninklijke Philips Electronics N.V. 2002. All rights reserved. 9397 750 09138 Product data Rev. 01 — 7 February 2002 13 of 17 BUK91/9907-55ATE Philips Semiconductors TrenchPLUS logic level FET 10. Soldering 10.85 10.60 10.50 handbook, full pagewidth 1.50 7.50 7.40 1.70 2.25 2.15 8.15 8.275 8.35 1.50 4.60 0.30 4.85 5.40 7.95 8.075 3.00 0.20 solder lands 1.70 (2×) solder resist 3.40 0.90 1.00 8.15 MSD058 occupied area solder paste Dimensions in mm. Fig 20. Reflow soldering footprint for SOT426. © Koninklijke Philips Electronics N.V. 2002. All rights reserved. 9397 750 09138 Product data Rev. 01 — 7 February 2002 14 of 17 BUK91/9907-55ATE Philips Semiconductors TrenchPLUS logic level FET 11. Revision history Table 6: Revision history Rev Date 01 20020207 CPCN Description - Product specification; initial version © Koninklijke Philips Electronics N.V. 2002. All rights reserved. 9397 750 09138 Product data Rev. 01 — 7 February 2002 15 of 17 BUK91/9907-55ATE Philips Semiconductors TrenchPLUS logic level FET 12. Data sheet status Data sheet status[1] Product status[2] Definition Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A. [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 13. Definitions 14. Disclaimers Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Right to make changes — Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 15. Trademarks — TrenchMOS is a trademark of Koninklijke Philips Electronics N.V. Contact information For additional information, please visit http://www.semiconductors.philips.com. For sales office addresses, send e-mail to: [email protected]. Product data Fax: +31 40 27 24825 © Koninklijke Philips Electronics N.V. 2002. All rights reserved. 9397 750 09138 Rev. 01 — 7 February 2002 16 of 17 Philips Semiconductors BUK91/9907-55ATE TrenchPLUS logic level FET Contents 1 2 3 4 5 6 7 7.1 8 9 10 11 12 13 14 15 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics. . . . . . . . . . . . . . . . . . . 5 Transient thermal impedance . . . . . . . . . . . . . . 5 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 12 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 15 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 16 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 © Koninklijke Philips Electronics N.V. 2002. Printed in The Netherlands All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 7 February 2002 Document order number: 9397 750 09138