www.fairchildsemi.com FS6M07652RT Fairchild Power Switch(SPS) Features Description • • • • • • • • • • The Fairchild Power Switch(SPS) product family is specially designed for an off-line SMPS with minimal external components. The Fairchild Power Switch(SPS) consist of high voltage power SenseFET and current mode PWM IC. Included PWM controller features integrated fixed oscillator, under voltage lock out, leading edge blanking, optimized gate turn-on/turn-off driver, thermal shut down protection, over voltage protection, and temperature compensated precision current sources for loop compensation and fault protection circuitry. Compared to discrete MOSFET and controller or RCC switching converter solution, a Fairchild Power Switch(SPS) can reduce total component count, design size, and weight and at the same time increase efficiency, productivity, and system reliability. It has a basic platform well suited for cost effective LCD monitor power supply. Fixed frequency Internal Burst mode Controller for Stand-by mode Pulse by pulse over current limiting Over current protection(Auto restart mode) Over voltage protection (Auto restart mode) Over load protection(Auto restart mode) Internal thermal shutdown function(Latch mode) Under voltage lockout Internal high voltage sense FET Soft start TO-220F-5L 1 Internal Block Diagram 3 Vref Internal Bias OSC 5 Vref Vref UVLO Burst mode controller Vfb Vth=1V 1 S Ron Q R Vcc Vth=11V/12V Roff PWM 4 2.5R R Ifb Vref Vfb Offset Vcc Rsenese Idelay OCL OLP Vth=7.5V S Vcc Vth=30V OVP UVLO Reset (Vcc=9V) R Q Q Filter (130nsec) S R Vth=1V 2 TSD Power-on Reset (Vcc=6.5V) (Tj=160 ℃) Rev.1.0.0 ©2001 Fairchild Semiconductor Corporation FS6M07652RT Absolute Maximum Ratings (Ta=25°C, unless otherwise specified) Parameter Drain-source(GND) voltage (1) Drain-Gate Voltage (RGS=1MΩ) Symbol Value Unit VDSS 650 V VDGR 650 V Gate-source (GND) Voltage VGS ±30 V Drain current pulsed (2) IDM 14.4 ADC EAS 570 mJ IAS 17 A Single pulsed avalanche energy (3) Single Pulsed Avalanche current (4) Continuous drain current (Tc = 25°C) ID 3.6 ADC Continuous drain current (TC=100°C) ID 2.28 ADC VCC 40 V VFB −0.3 to VCC V VS_S −0.3 to 10 V Supply voltage Input Voltage Range PD(Watt H/S) TO-220F;46 W Derating TO-220F;0.37 W/°C Operating junction temperature Tj +160 °C Operating Ambient Temperature TA −25 to +85 °C TSTG −55 to +150 °C Total Power Dissipation Storage Temperature range Notes: 1. Tj=25°C to 150°C 2. Repetitive rating: Pulse width limited by maximum junction temperature 3. L=81mH, starting Tj=25°C 4. L=13uH, starting Tj=25°C 2 FS6M07652RT Electrical Characteristics (SFET part) (Ta=25°C unless otherwise specified) Parameter Drain-source breakdown voltage Zero gate voltage drain current Static drain-source on resistance (note) Symbol Min. Typ. Max. Unit VGS=0V, ID=250µA 650 - - V VDS=650V, VGS=0V - - 25 µA IDSS VDS=520V VGS=0V, TC=125°C - - 300 µA BVDSS Condition RDS(ON) VGS=10V, ID=1.8A - 1.3 1.6 Ω Forward transconductance (note) gfs VDS=50V, ID=1.8A - 3.3 - S Input capacitance Ciss - 1200 1560 - 125 160 - 23 30 Output capacitance Coss Reverse transfer capacitance Crss Turn on delay time td(on) Rise time Turn off delay time Fall time tr td(off) tf Total gate charge (gate-source+gate-drain) Qg Gate-source charge Qgs Gate-drain (Miller) charge Qgd VGS=0V, VDS=25V, f = 1MHz VDD=325V, ID=6.5A (MOSFET switching time are essentially independent of operating temperature) VGS=10V, ID=6.5A, VDS=520V (MOSFET Switching time are Essentially independent of Operating temperature) - 22 55 - 70 150 - 105 220 - 65 140 - 40 52 - 6.5 - - 18 - pF nS nC Note: Pulse test : Pulse width ≤ 300µS, duty 2% 1 S = ---R 3 FS6M07652RT Electrical Characteristics (Ta=25°C unless otherwise specified) Parameter Symbol Condition Min. Typ. Max. Unit UVLO SECTION Start threshold voltage VSTART VFB=GND 14 15 16 V Stop threshold voltage VSTOP VFB=GND 8 9 10 V Drain to PKG Breakdown voltage BVpkg 60HZ AC, Ta=25°C 3500 - - V Drain to Source Breakdown voltage BVdss Vdrain = 650V, Ta=25°C 650 - - V Idss Vdrain = 650V, Ta=25°C - - 300 uA SENSEFET SECTION Drain to Source Leakage current OSCILLATOR SECTION Initial Frequency FOSC Voltage Stability FSTABLE 63 70 77 kHz 12V ≤ Vcc ≤ 23V - 0 1 3 % -25°C ≤ Ta ≤ 85°C 0 ±5 ±10 % Temperature Stability (note4) ∆FOSC Maximum duty cycle DMAX - 75 80 85 % Minimum Duty Cycle DMIN - - - 0 % FEEDBACK SECTION Feedback source current IFB VFB=GND 0.7 0.9 1.1 mA Shutdown Feedback voltage VSD Vfb ≥ 6.9V 6.9 7.5 8.1 V Idelay VFB=5V 3.2 4.0 4.8 µA Over Voltage Protection VOVP Vsync ≥ 11V 27 30 33 V Over Current Latch Voltage (Note2) VOCL - 0.9 1.0 1.1 V Thermal Shutdown Temp.(Note4) TSD - 140 160 - °C Shutdown delay current PROTECTION SECTION SOFTSTART SECTION Softstart Vortage VSS Vfb=2 4.7 5.0 5.3 V Softstart Current ISS Vss=V 0.8 1.0 1.2 mA Burst mode Low Threshold Voltage VBURL Vfb=0V 10.4 11.0 11.6 V Burst mode High Threshold Voltage VBURH Vfb=0V 11.4 12.0 12.6 V BURST MODE SECTION Burst mode Enable Feedback Voltage(Note4) Burst mode Peak Current Limit(Note3) Burst mode Frequency VBEN Vcc=10.5V 0.7 1.0 1.3 V IBU_PK Vcc=10.5V 0.38 0.5 0.62 V 63 70 77 KHz 1.76 2.0 2.24 A - 0.1 0.2 mA - 10 15 mA FBUR Vcc=10.5V, Vfb=0V IOVER - ISTART Vfb=GND, VCC=14V IOP Vfb=GND, VCC=16V IOP(MIN) Vfb=GND, VCC=10V IOP(MAX) Vfb=GND, VCC=28V CURRENT LIMIT(SELF-PROTECTION)SECTION Peak Current Limit(Note3) TOTAL DEVICE SECTION Start Up current Operating supply current (Note1) Notes: (1) These parameters is the current flowing in the Control IC. (2) These parameters, although guaranteed, are tested in EDS(wafer test) process. (3) These parameters indicate Inductor Current. (4) These parameters, although guranteed at the design, are not tested in massing production. 4 FS6M07652RT Typical Performance Characteristics Start Up Current vs. Temp 0.150 [mA] Operating Current vs. Temp [mA] 11.0 0.125 10.5 0.100 10.0 0.075 9.5 0.050 -25 0 25 50 75 100 125 150 9.0 -25 0 25 Temp 10.0 15.5 9.5 15.0 9.0 14.5 8.5 0 25 50 75 100 125 150 [V] 125 150 8.0 -25 Stop Threshold Voltage vs. Temp 0 25 50 75 100 125 150 Temp Temp Figure 3. Start Threshold Voltage vs. Temp [KHz] 100 Figure 2. Operating Current vs. Temp Start Threshold Voltage vs. Temp 14.0 -25 75 Temp Figure 1. Start Up Current vs. Temp 16.0 [V] 50 Figure 4. Stop Threshold Voltage vs. Temp Initial Freqency vs. Temp 81.0 76 Maximum Duty vs. Temp [%] 74 80.5 72 80.0 70 68 79.5 66 64 -25 0 25 50 75 100 Temp Figure 5. Initial Freqency vs. Temp 125 150 79.0 -25 0 25 50 75 100 125 150 Temp Figure 6. Maximum Duty vs. Temp 5 FS6M07652RT Typical Performance Characteristics (Continued) 0.45 [V] Feedback Offset Voltage vs. Temp 1.1 0.40 [mA] Feedback Source Current vs. Temp 1.0 0.35 0.9 0.30 0.8 0.25 0.20 -25 0 25 50 75 100 125 150 0.7 -25 0 25 Figure 7. Feedback Offset Voltage vs. Temp 4.8 [uA] ShutDown Delay Current vs. Temp 4.0 7.50 3.6 7.45 25 50 75 100 125 150 7.40 -25 0 25 Figure 9. ShutDown Delay Current vs. Temp [V] 30.5 5.00 30.0 4.99 29.5 0 25 50 75 100 125 Temp Figure 11 . Softstart Voltage vs. Temp 6 50 75 100 125 150 OverVoltage Protection vs. Temp 31.0 5.01 4.98 -25 150 Figure 10 . ShutDown Feedback Voltage vs. Temp Softstart Voltage vs. Temp [V] 125 Temp Temp 5.02 100 [V] ShutDown Feedback Voltage vs. Temp 7.60 7.55 0 75 Figure 8. Feedback Source Current vs. Temp 4.4 3.2 -25 50 Temp Temp 150 29.0 -25 0 25 50 75 100 125 150 Temp Figure 12 . Over Voltage Protection vs. Temp FS6M07652RT Typical Performance Characteristics (Continued) [V] Burst Mode Low Voltage vs. Temp [V] 11.2 12.2 11.1 12.1 11.0 12.0 10.9 11.9 10.8 -25 0 25 50 75 100 125 150 11.8 -25 Burst Mode High Voltage vs. Temp 0 25 Temp [A] Burst Mode Peak Current vs. Temp 0.55 2.05 0.50 2.00 0.45 1.95 50 75 125 150 100 125 150 Temp Figure 15 . Burst Mode Peak Current vs. Temp Over Current Limit vs. Temp [A] 2.10 25 100 Figure 14 . Burst Mode High Voltage vs. Temp 0.60 0 75 Temp Figure 13 . Burst Mode Low Voltage vs. Temp 0.40 -25 50 1.90 -25 0 25 50 75 100 125 150 Temp Figure 16 . Over Current Limit vs. Temp 7 FS6M07652RT Package Dimensions TO-220F-5L ø3.18 ±0.10 (0.70) (1.00x45°) 0.80TYP 1.10TYP 2-1.30MAX (#1,#5) 3-1.00MAX (#2,#3,#4) #1 2.76 ±0.30 (#2,#4) #5 5-0.60 ±0.10 (#1,#3,#5) +0.10 0.50 –0.05 2.54TYP [2.54 ±0.20] 3-1.50TYP [3-1.50 ±0.20] 4.70 ±0.20 9.40 ±0.20 8 3.18 ±0.30 5.00 ±0.50 5.63 ±0.50 (3.50) 18.20 ±0.50 16.08 (1.80) (2-ø1.00 Dp 0.10) (1.01) 10.63 ±0.50 2.54 ±0.20 (5.40) (1.50) (7.00) 3.30 ±0.10 (6.50) 15.87 ±0.20 6.68 ±0.20 10.16 ±0.20 FS6M07652RT Ordering Information Product Number FS6M07652RT Package Operating Temperature TO-220F-5L -25°C to +85°C 9 FS6M07652RT DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. www.fairchildsemi.com 4/13/01 0.0m 001 Stock#DSxxxxxxxx 2001 Fairchild Semiconductor Corporation