ETC HT24LC04-8DIP-A

HT24LC04
CMOS 4K 2-Wire Serial EEPROM
Features
· Operating voltage: 2.4V~5.5V
· Partial page write allowed
· Low power consumption
· 16-byte page write modes
- Operation: 5mA max.
- Standby: 5mA max.
· Write operation with built-in timer
· Hardware controlled write protection
· Internal organization: 512´8
· 40-year data retention
· 2-wire serial interface
· 106 erase/write cycles per word
· Write cycle time: 5ms max.
· Commerical temperature range: 0°C to +70°C
· Automatic erase-before-write operation
· 8-pin DIP/SOP/TSSOP package
General Description
The HT24LC04 is a 4K-bit serial read/write non-volatile
memory device using the CMOS floating gate process.
Its 4096 bits of memory are organized into 512 words
and each word is 8 bits. The device is optimized for use
in many industrial and commercial applications where
low power and low voltage operation are essential. Up
to four HT24LC04 devices may be connected to the
same two-wire bus. The HT24LC04 is guaranteed for
1M erase/write cycles and 40-year data retention.
Block Diagram
Pin Assignment
S C L
S D A
I/O
C o n tro l
L o g ic
H V P u m p
X
W P
M e m o ry
C o n tro l
L o g ic
E
1
8
V C C
A 1
2
7
W P
A 2
3
6
S C L
V S S
4
5
S D A
H T 2 4 L C 0 4
8 D IP -A /S O P -A /T S S O P -A
E E P R O M
A rra y
D
A 0
C
P a g e B u f
Y D E C
A 0 ~ A 2
A d d re s s
C o u n te r
S e n s e A M P
R /W C o n tro l
V C C
V S S
Rev. 1.10
1
June 24, 2002
HT24LC04
Pin Description
Pin No.
Pin Name
I/O
I
Description
1~3
A0~A2
Address inputs
4
VSS
¾
Negative power supply
5
SDA
I/O
Serial data inputs/output
6
SCL
I
7
WP
I
8
VCC
¾
Serial clock data input
Write protect
Positive power supply
Absolute Maximum Ratings
Operating Temperature (Commercial) ........................................................................................................ 0°C to 70°C
Storage Temperature ............................................................................................................................-50°C to 125°C
Applied VCC Voltage with Respect to VSS ..................................................................................VSS -0.3V to VCC+6.0V
Applied Voltage on any Pin with Respect to VSS .................................................................................................VSS-0.3V to VCC+0.3V
Note: These are stress ratings only. Stresses exceeding the range specified under ²Absolute Maximum Ratings² may
cause substantial damage to the device. Functional operation of this device at other conditions beyond those
listed in the specification is not implied and prolonged exposure to extreme conditions may affect device reliability.
D.C. Characteristics
Symbol
Parameter
Ta=0°C to 70°C
Test Conditions
VCC
Conditions
¾
Min.
Typ.
Max.
Unit
2.4
¾
5.5
V
¾
¾
2
mA
VCC
Operating Voltage
¾
ICC1
Operating Current
5V
Read at 100kHz
ICC2
Operating Current
5V
Write at 100kHz
¾
¾
5
mA
VIL
Input Low Voltage
¾
¾
-1
¾
0.3VCC
V
VIH
Input High Voltage
¾
¾
0.7VCC
¾
VCC+0.5
V
VOL
Output Low Voltage
¾
¾
0.4
V
ILI
Input Leakage Current
5V
VIN=0 or VCC
¾
¾
1
mA
ILO
Output Leakage Current
5V
VOUT=0 or VCC
¾
¾
1
mA
ISTB1
Standby Current
5V
VIN=0 or VCC
¾
¾
5
mA
ISTB2
Standby Current
2.4V VIN=0 or VCC
¾
¾
4
mA
CIN
Input Capacitance (See Note)
¾
f=1MHz 25°C
¾
¾
6
pF
COUT
Output Capacitance (See Note)
¾
f=1MHz 25°C
¾
¾
8
pF
2.4V IOL=2.1mA
Note: These parameters are periodically sampled but not 100% tested
Rev. 1.10
2
June 24, 2002
HT24LC04
A.C. Characteristics
Symbol
Parameter
Ta=0°C to 70°C
Standard Mode*
VCC=5V±10%
Min.
Max.
Min.
Max.
Unit
Remark
fSK
Clock Frequency
¾
100
¾
400
kHz
¾
tHIGH
Clock High Time
4000
¾
600
¾
ns
¾
tLOW
Clock Low Time
4700
¾
1200
¾
ns
¾
tR
SDA and SCL Rise Time
¾
1000
¾
300
ns
Note
tF
SDA and SCL Fall Time
¾
300
¾
300
ns
Note
tHD:STA
START Condition Hold Time
4000
¾
600
¾
ns
After this period the first
clock pulse is generated
tSU:STA
START Condition Setup Time
4000
¾
600
¾
ns
Only relevant for repeated
START condition
tHD:DAT
Data Input Hold Time
0
¾
0
¾
ns
¾
¾
tSU:DAT
Data Input Setup Time
200
¾
100
¾
ns
tSU:STO
STOP Condition Setup Time
4000
¾
600
¾
ns
¾
tAA
Output Valid from Clock
¾
3500
¾
900
ns
¾
tBUF
Bus Free Time
4700
¾
1200
¾
ns
Time in which the bus
must be free before a new
transmission can start
tSP
Input Filter Time Constant
(SDA and SCL Pins)
¾
100
¾
50
ns
Noise suppression time
tWR
Write Cycle Time
¾
5
¾
5
ms
Note:
¾
These parameters are periodically sampled but not 100% tested
* The standard mode means VCC=2.4V to 5.5V
For relative timing, refer to timing diagrams
Functional Description
· Serial clock (SCL)
VSS. When the write protect pin is connected to Vcc,
the write protection feature is enabled and operates
as shown in the following table.
The SCL input is used for positive edge clock data into
each EEPROM device and negative edge clock data
out of each device.
WP Pin Status
· Serial data (SDA)
The SDA pin is bidirectional for serial data transfer.
The pin is open-drain driven and may be wired-OR
with any number of other open-drain or open collector
devices.
Full Array (4K)
At VSS
Normal Read/Write Operations
Memory organization
· HT24LC04, 4K Serial EEPROM
· A0, A1, A2
Internally organized with 512 8-bit words, random
word addressing requires a 9-bit data word address.
The HT24LC04 uses the A2 and A1 inputs for hard
wire addressing and a total of four 4K devices may be
addressed on a single bus system. The A0 pin is not
connected. (The device addressing is discussed in
detail under the Device Addressing section).
Device operations
· Clock and data transition
Data transfer may be initiated only when the bus is not
busy. During data transfer, the data line must remain
stable whenever the clock line is high. Changes in
data line while the clock line is high will be interpreted
as a START or STOP condition.
· Write protect (WP)
The HT24LC04 has a write protect pin that provides
hardware data protection. The write protect pin allows
normal read/write operations when connected to the
Rev. 1.10
Protect Array
At VCC
3
June 24, 2002
HT24LC04
· Start condition
The 8th bit of device address is the read/write operation
select bit. A read operation is initiated if this bit is high
and a write operation is initiated if this bit is low.
A high-to-low transition of SDA with SCL high is a start
condition which must precede any other command
(refer to Start and Stop Definition Timing diagram).
If the comparison of the device address succeed the
EEPROM will output a zero at ACK bit. If not, the chip will
return to a standby state.
· Stop condition
A low-to-high transition of SDA with SCL high is a stop
condition. After a read sequence, the stop command
will place the EEPROM in a standby power mode (refer to Start and Stop Definition Timing Diagram).
1
A 2
A 1
A 0
R /W
· Byte write
A write operation requires an 8-bit data word address
following the device address word and acknowledgment. Upon receipt of this address, the EEPROM will
again respond with a zero and then clock in the first
8-bit data word. After receiving the 8-bit data word, the
EEPROM will output a zero and the addressing device, such as a microcontroller, must terminate the
write sequence with a stop condition. At this time the
EEPROM enters an internally-timed write cycle to the
non-volatile memory. All inputs are disabled during
this write cycle and EEPROM will not respond until the
write is completed (refer to Byte write timing).
D a ta a llo w e d
to c h a n g e
S D A
S C L
S to p
c o n d itio n
Device addressing
· Page write
The 4K EEPROM devices require an 8-bit device address word following a start condition to enable the chip
for a read or write operation. The device address word
consist of a mandatory one, zero sequence for the first
four most significant bits (refer to diagram showing the
Device Address). This is common to all the EEPROM
device.
The next three bits are the A2, A1 and A0 device address bits for the 1K/2K EEPROM. These three bits
must compare to their corresponding hard-wired input
pins.
The 4K device is capable of 16-byte page writes.
A page write is initiated the same as byte write, but the
microcontroller does not send a stop condition after
the first data word is clocked in. Instead, after the
EEPROM acknowledges the receipt of the first data
word, the microcontroller can transmit up to fifteen
more data words. The EEPROM will respond with a
ze r o a f t e r e a ch d a t a w o r d r e ce i ve d . T h e
microcontroller must terminate the page write sequence with a stop condition.
The data word address lower four bits are internally incremented following the receipt of each data word.
The higher data word address bits are not incremented, retaining the memory page row location (refer to Page write timing).
The 4K EEPROM only use the A2 and A1 device address bits with the third bit as a memory page address
bit. The two device address bits must compare to their
corresponding hardwired input pins. The A0 pin is not
connected.
D e v ic e a d d r e s s
S D A
0
Write operations
All addresses and data words are serially transmitted
to and from the EEPROM in 8-bit words. The
EEPROM sends a zero to acknowledge that it has received each word. This happens during the ninth
clock cycle.
A d d re s s o r
a c k n o w le d g e
v a lid
1
D e v ic e A d d r e s s
· Acknowledge
S ta rt
c o n d itio n
0
S
W o rd a d d re s s
D A T A
A 2 A 1 A 0
P
R /W
S ta rt
A C K
A C K
A C K
S to p
Byte write timing
D e v ic e a d d r e s s
S D A
D A T A n
W o rd a d d re s s
D A T A n + 1
P
S
S ta rt
A C K
A C K
A C K
Page write timing
Rev. 1.10
D A T A n + x
4
A C K
S t
June 24, 2002
HT24LC04
· Acknowledge polling
· Write protect
The HT24LC04 can be used as a serial ROM when
the WP pin is connected to VCC. Programming will be
inhibited and the entire memory will be
write-protected.
Since the device will not acknowledge during a write
cycle, this can be used to determine when the cycle is
complete (this feature can be used to maximize bus
throughput). Once the stop condition for a write command has been issued from the master, the device initiates the internally timed write cycle. ACK polling can
be initiated immediately. This involves the master
sending a start condition followed by the control byte
for a write command (R/W=0). If the device is still busy
with the write cycle, then no ACK will be returned. If
the cycle is completed, then the device will return the
ACK and the master can then proceed with the next
read or write command.
· Read operations
Read operations are initiated the same way as write
operations with the exception that the read/write select bit in the device address word is set to one. There
are three read operations: current address read, random address read and sequential read.
· Current address read
The internal data word address counter maintains the
last address accessed during the last read or write operation, incremented by one. This address stays valid
between operations as long as the chip power is maintained. The address roll over during read from the last
byte of the last memory page to the first byte of the first
page. The address roll over during write from the last
byte of the current page to the first byte of the same
page. Once the device address with the read/write select bit set to one is clocked in and acknowledged by
the EEPROM, the current address data word is serially clocked out. The microcontroller does not respond
with an input zero but generates a following stop condition (refer to Current read timing).
S e n d W r ite C o m m a n d
S e n d S to p C o n d itio n
to In itia te W r ite C y c le
S e n d S ta rt
S e n d C o tr o ll B y te
w ith R /W = 0
(A C K = 0 )?
N o
· Random read
Y e s
A random read requires a dummy byte write sequence
to load in the data word address which is then clocked
in and acknowledged by the EEPROM. The
microcontroller must then generate another start condition. The microcontroller now initiates a current address read by sending a device address with the
read/write select bit high. The EEPROM acknowledges the device address and serially clocks out the
data word. The microcontroller does not respond with
a zero but does generates a following stop condition
(refer to Random read timing).
N e x t O p e r a tio n
Acknowledge polling flow
D e v ic e a d d r e s s
S D A
S
D A T A
S to p
A 2 A 1 A 0
S ta rt
P
N o A C K
A C K
Current read timing
D e v ic e a d d r e s s
S D A
S
S ta rt
A 2
W o rd a d d re s s
D e v ic e a d d r e s s
D A T A
S
A 1 A 0
A C K
S to p
P
A C K
S ta rt
A C K
N o A C K
Random read timing
Rev. 1.10
5
June 24, 2002
HT24LC04
· Sequential read
words. When the memory address limit is reached, the
data word address will roll over and the sequential read
continues. The sequential read operation is terminated
when the microcontroller does not respond with a zero
but generates a following stop condition (refer to Sequential read timing).
Sequential reads are initiated by either a current address read or a random address read. After the
microcontroller receives a data word, it responds with an
acknowledgment. As long as the EEPROM receives an
acknowledgment, it will continue to increment the data
word address and serially clock out sequential data
D e v ic e a d d r e s s
S D A
D A T A n + 1
D A T A n
D A T A n + x
P
S
A C K
S ta rt
A C K
S to p
A C K
Sequential read timing
Timing Diagrams
tF
tR
S C L
tS
S D A
U :S T A
tS
tL
O W
tH
D :S T A
tH
IG H
tH
D :D A T
tS
U :D A T
P
tA
S D A
A
V a lid
O U T
tS
U :S T O
tB
U F
V a lid
S C L
S D A
8 th b it
A C K
W o rd n
tW
S to p
C o n d itio n
Note:
R
S ta rt
C o n d itio n
The write cycle time tWR is the time from a valid stop condition of a write sequence to the end of the valid start
condition of sequential command.
Rev. 1.10
6
June 24, 2002
HT24LC04
Package Information
8-pin DIP (300mil) outline dimensions
A
5
8
B
4
1
H
C
D
=
G
E
I
F
Symbol
Rev. 1.10
Dimensions in mil
Min
Nom
Max
A
355
¾
375
B
240
¾
260
C
125
¾
135
D
125
¾
145
E
16
¾
20
F
50
¾
70
G
¾
100
¾
H
295
¾
315
I
335
¾
375
a
0°
¾
15°
7
June 24, 2002
HT24LC04
8-pin SOP (150mil) outline dimensions
8
5
A
B
1
4
C
C '
G
H
D
E
Symbol
Rev. 1.10
=
F
Dimensions in mil
Min
Nom
Max
A
228
¾
244
B
149
¾
157
C
14
¾
20
C¢
189
¾
197
D
53
¾
69
E
¾
50
¾
F
4
¾
10
G
22
¾
28
H
4
¾
12
a
0°
¾
10°
8
June 24, 2002
HT24LC04
8-pin TSSOP outline dimensions
E
L
E 1
C
L 1
G
D
A 2
A
e
B A 1
R 0 .1 0
y
(4 C O R N E R S )
Symbol
Rev. 1.10
Dimensions in mm
Min
Nom
Max
A
1.05
¾
1.20
A1
0.05
¾
0.15
A2
0.95
¾
1.05
B
¾
0.25
¾
C
0.11
¾
0.15
D
2.90
¾
3.10
E
6.20
¾
6.60
E1
4.30
¾
4.50
e
¾
0.65
¾
L
0.50
¾
0.70
L1
0.90
¾
1.10
y
¾
¾
0.10
q
0°
¾
8°
9
June 24, 2002
HT24LC04
Holtek Semiconductor Inc. (Headquarters)
No.3, Creation Rd. II, Science-based Industrial Park, Hsinchu, Taiwan
Tel: 886-3-563-1999
Fax: 886-3-563-1189
http://www.holtek.com.tw
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Tel: 886-2-2782-9635
Fax: 886-2-2782-9636
Fax: 886-2-2782-7128 (International sales hotline)
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Tel: 852-2-745-8288
Fax: 852-2-742-8657
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7th Floor, Building 2, No.889, Yi Shan Rd., Shanghai, China
Tel: 021-6485-5560
Fax: 021-6485-0313
http://www.holtek.com.cn
Holmate Semiconductor, Inc.
48531 Warm Springs Boulevard, Suite 413, Fremont, CA 94539
Tel: 510-252-9880
Fax: 510-252-9885
http://www.holmate.com
Copyright Ó 2002 by HOLTEK SEMICONDUCTOR INC.
The information appearing in this Data Sheet is believed to be accurate at the time of publication. However, Holtek assumes no responsibility arising from the use of the specifications described. The applications mentioned herein are used
solely for the purpose of illustration and Holtek makes no warranty or representation that such applications will be suitable
without further modification, nor recommends the use of its products for application that may present a risk to human life
due to malfunction or otherwise. Holtek reserves the right to alter its products without prior notification. For the most
up-to-date information, please visit our web site at http://www.holtek.com.tw.
Rev. 1.10
10
June 24, 2002