This is an advance copy of the dated document. The final document from Defense Automated Printing Service may be slightly different in format due to electronic conversion processes. Actual technical content will be the same. INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 10 November 1998. MIL-PRF-19500/270G 10 August 1998 SUPERSEDING MIL-PRF-19500/270F 19 January 1998 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, UNITIZED, DUAL-TRANSISTOR, NPN, SILICON, TYPES 2N2060 AND 2N2060L JAN, JANTX, JANTXV, AND JANS This specification is approved for use by all Departments and Agencies of the Department of Defense. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for two electrically isolated, matched NPN, silicon transistors as one dual unit. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. 1.2 Physical dimensions. See figure 1 (similar to TO-77 or TO-99). 1.3 Maximum ratings. PT1 TA = +25qC PT2 TC = +25qC One section 1/ Both sections 2/ One section 1/ Both sections 2/ mW mW W W IC VCBO VCEO VEBO TSTG and TJ mA dc V dc V dc V dc qC 540 600 1.5 2.12 500 100 60 7 1/ For TA > +25qC, derate linearly 3.08 mW/qC one section, 3.48 mW/qC both sections. 2/ For TC > +25qC, derate linearly 8.6 mW/qC one section, 12.1 mW/qC both sections. -65 to +200 1.4 Primary electrical characteristics at TA = +25qC. hFE1 hFE2 hFE3 hFE4 1/ | hfe| VCE(sat) VBE(sat) VCE= 5 V dc VCE= 5 V dc VCE= 5 V dc VCE= 5 V dc VCE= 10 V dc IC = 50 mA dc IC = 50 mA dc IC = 10 PA dc IC = 100 PA dc IC = 1 mA dc IC = 10 mA dc IC = 50 mA dc IB = 5 mA dc IB = 5 mA dc V dc V dc 0.3 0.9 Limit f = 20 MHz Min 25 Max 75 1/ Pulsed (see 4.5.1).0 30 90 40 120 50 150 3 25 Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAT, 3990 East Broad Street, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter. AMSC N/A DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited. FSC 5961 MIL-PRF-19500/270G Dimensions Symbol Inches Millimeters Min Max Min Max CD .335 .370 8.51 9.40 CD1 .305 .335 7.75 8.51 CH .150 .260 3.81 7.60 LC .200 TP 5.08 TP LC1 .140 .160 3.56 4.06 LD .016 .021 0.41 0.53 LL 11. 12. 13. --- .050 --- 1.27 10 LL2 .250 --- 6.35 --- 10 LU .016 .019 0.41 0.48 10 P .100 --- 2.54 --- 8 Q --- .050 --- 1.27 7 TL .029 .045 0.74 1.14 5, 6 TW .028 .034 0.71 0.86 4, 5 h .009 .041 0.23 1.04 r --- .010 --- 0.25 45qTP 45qTP CD1 shall not vary more than .010 inch (.25 mm) in zone P. This zone is controlled for automatic handling. Leads at gauge plane .054 - .055 inch (1.37 - 1.40 mm) below seating plane shall be within .007 inch (.18 mm) radius of true position (TP) at a maximum material condition (MMC) relative to the tab at MMC. The device may be measured by direct methods or by the gauge and gauging procedure described on gauge drawing GS-1. LU applies between LL1 and LL2 LD applies between LL2 and LL minimum. Diameter is uncontrolled in LL1 and beyond minimum. r (radius) applies to both inside corners of tab. For transistor types 2N2060, LL is .500 inch (12.70 mm) minimum, and .750 inch (19.50 mm) maximum. For transistor types 2N2060L, LL is 1.500 inches (38.10 mm) minimum, and 1.750 inches (44.45 mm) maximum. FIGURE 1. Physical dimensions. 2 10 See notes 10, 12, and 13 NOTES: 1. Dimensions are in inches. 2. Metric equivalents are given for general information only. 3. Refer to rules for dimensioning semiconductor product outlines included in Publication No. 95. 4. Lead number 4 and 8 omitted on this variation. 5. Beyond r, TW must be held to a minimum length of .021 inch (.53 mm). 6. TL measured from maximum CD. 7. Details of outline in this zone optional. 10. 9 LL1 D 8. 9. Notes 11 9 MIL-PRF-19500/270G 1.5 Primary electrical matching characteristics of each individual section. hFE 2 −1 hFE 2− 2 1/ | VBE1 - VBE2| |'( VBE1 - VBE2) ' TA |1 |'(VBE1 - VBE2) ' TA |2 Limit VCE = 5 V dc; VCE = 5 V dc; VCE = 5 V dc; VCE = 5 V dc; IC = 100 PA dc 1/ IC = 100 PA dc IC = 100 PA dc IC = 100 PA dc TA = +25qC and -55qC TA = +125qC and +25qC mV dc mV dc mV --5 --0.8 --1.0 Min Max 0.9 1.0 1/ The larger number will be placed in the denominator. 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements documents cited in sections 3 and 4 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Department of Defense Index of Specifications and Standards (DODISS) and supplement thereto, cited in the solicitation (see 6.2). SPECIFICATION DEPARTMENT OF DEFENSE MIL-PRF-19500 - Semiconductor Devices, General Specification for. STANDARD MILITARY MIL-STD-750 - Test Methods for Semiconductor Devices. (Unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited herein (except for related associated specifications or specification sheets), the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Qualification. Devices furnished under this specification shall be products that are authorized by the qualifying activity for listing on the applicable qualified products list before contract award (see 4.2 and 6.3). 3 MIL-PRF-19500/270G 3.2 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF19500 and as follows. h FE −1 .............................................Static forward-current-gain-ratio. The matching ratio of the static forward-current transfer ratios h FE − 2 of each section. |VBE1 - VBE2| .....................................Absolute value of base-emitter-voltage differential between the individual sections. |'( VBE1 - VBE2) ' TA | .......................Absolute value of the algebraic difference between the base-emitter-voltage differentials between the individual sections at two different temperatures. 3.3 Interface requirements and physical dimensions. The interface requirements and physical dimensions shall be as specified in MIL-PRF-19500, MIL-HDBK-6100 and herein. 3.3.1 Lead finish. Lead finish shall be gold, silver, tin, or solder plated. Lead finish shall be solderable as defined in MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition requirements (see 6.2). 3.4 Marking. Devices shall be marked as specified in MIL-PRF-19500. 3.5 Electrical performance characteristics. Unless otherwise specified, the electrical performance characteristics are as specified in 1.3, 1.4, and table I herein. 3.6 Electrical test requirements. The electrical test requirements shall be the subgroups specified in 4.4.2 and 4.4.3 herein. 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500. 4 MIL-PRF-19500/270G 4.3 Screening (JANS, JANTX, and JANTXV levels only). Screening shall be in accordance with MIL-PRF-19500 (table IV), and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table IV of MIL-PRF-19500) 3c 9 10 11 Measurement JANS level JANTX and JANTXV levels Thermal impedance (see 4.3.2) ICBO2, Thermal impedance (see 4.3.2) hFE 2 −1 , and hFE3 hFE 2− 2 Not applicable 48 hours minimum ICBO2, 48 hours minimum hFE 2 −1 , and hFE3 hFE 2− 2 ICBO2 and hFE3 ICBO2 = 100 percent of initial value or 2 nA dc, whichever is greater. 12 'hFE3 = r 15 percent See 4.3.1 240 hours minimum See 4.3.1 80 hours minimum 13 Subgroups 2 and 3 of table I herein; Subgroup 2 of table I herein; 'ICBO2 = 100 percent of initial value or 2 nA dc, whichever is greater. 'ICBO2 = 100 percent of initial value or 2 nA dc, whichever is greater. 'hFE3 = r15 percent 'hFE3 = r15 percent MIL-STD-750, method 1016, test condition A (collector to collector) Not applicable 13 (a) 9 RC1-C2 = 10 ohms minimum. 4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: JANS level (all device types) .................. VCB = 10 - 40 V dc, PT = 300 mW (each section) at TA = +25qC r 3qC. VCB = 10 - 40 V dc, PT = 600 mW (both sections) at TA = +25qC r 3qC. JANTX and JANTXV levels (all device types)...................................... VCB = 10 - 40 V dc, PT = 300 mW (each section) at TA = +25qC r 3qC. VCB = 10 - 40 V dc, PT = 600 mW (both sections) at TA = +25qC r 3qC. NOTE: No heat sink or forced air cooling on the devices shall be permitted. 4.3.2 Thermal impedance (ZTJX measurements). The ZTJX measurements shall be performed in accordance with MIL-STD-750, Method 3131. a. IM measurement current ---------------------- 5 mA. b. IH forward heating current ------------------- 200 mA (min). c. tH heating time --------------------------------- 25 - 30 ms. d. tmd measurement delay time ---------------- 60 Ps max. e. VCE collector-emitter voltage --------------- 10 V dc minimum The maximum limit for ZTJX under these test conditions are ZTJX (max) = 72qC/W. 5 MIL-PRF-19500/270G 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500, and as specified herein. If alternate screening is being performed per MIL-PRF-19500, a sample of screened devices shall be submitted to and pass the requirements of group A1 and A2 inspection only (table VIb, group B, subgroup 1 is not required to be performed again if group B has already been satisfied per 4.4.2). 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500, and table I herein. 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in table VIa (JANS) of MIL-PRF-19500 and 4.4.2.1. Electrical measurements (end-points) and delta requirements shall be in accordance with group A, subgroup 2 and 4.5.9 herein. See 4.4.2.2 for JAN, JANTX, and JANTXV group B testing. Electrical measurements (endpoints) and delta requirements for JAN, JANTX, and JANTXV shall be after each step in 4.4.2.2 and shall be in accordance with group A, subgroup 2 and 4.5.9 herein. 4.4.2.1 Group B inspection, table VIa (JANS) of MIL-PRF-19500. Subgroup Method Condition B4 1037 VCB = 10 V dc; TJ = 150qC, ton = toff = 3 minutes minimum for 2,000 cycles. No heat sink or forced-air cooling on devices shall be permitted. B5 1027 VCB = 10 V dc; TA = +125qC +25qC for 96 hours with PT adjusted according to the chosen TA to give an average TJ = +275qC. 4.4.2.2 Group B inspection, (JAN, JANTX, and JANTXV). 1/ Step Method Condition 1 1039 Steady-state life: Test condition B, 340 hours, VCB = 10 -30 V dc, TJ = 150qC min. No heat sink or forcedair cooling on the devices shall be permitted. n = 45 devices, c = 0 2 1039 The steady state life test of step 1 shall be extended to 1,000 hrs for each die design. Samples shall be selected from a wafer lot every twelve months of wafer production. Group B step 2 shall not be required more than once for any single wafer lot. n = 45, c = 0. 3 1032 High-Temperature life (non-operating), t = 340 hours, TA = +200qC. n = 22, c = 0 1/ Separate samples may be used for each step. In the event of a group B failure, the manufacturer may pull a new sample at double size from either the failed assembly lot or from another assembly lot from the same wafer lot. If the new “assembly lot” option is exercised, the failed assembly lot shall be scrapped. 4.4.2.3 Group B sample selection. Samples selected from group B inspection shall meet all of the following requirements: a. For JAN, JANTX, and JANTXV samples shall be selected randomly from a minimum of three wafers (or from each wafer in the lot) from each wafer lot. For JANS, samples shall be selected from each inspection lot. See MIL-PRF-19500. b. Must be chosen from an inspection lot that has been submitted to and passed group A, subgroup 2, conformance inspection. When the final lead finish is solder or any plating prone to oxidation at high temperature, the samples for life test (subgroups B4 and B5 for JANS, and group B for JAN, JANTX, and JANTXV) may be pulled prior to the application of final lead finish. 4.4.3 Group C inspection, Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in table VII of MIL-PRF-19500, and in 4.4.3.1 (JANS).and 4.4.3.2 (JAN, JANTX, and JANTXV) herein for group C testing. Electrical measurements (end points) and delta requirements shall be in accordance with group A, subgroup 2 and 4.5.9 herein. 6 MIL-PRF-19500/270G 4.4.3.1 Group C inspection, table VII (JANS) of MIL-PRF-19500. Subgroup Method Condition C2 2036 Test condition E. C6 1026 1,000 hours at VCB = 10 V dc; TJ = 150qC min. No heat sink or forced-air cooling on device shall be permitted. 4.4.3.2 Group C inspection, table VII (JAN, JANTX, and JANTXV) of MIL-PRF-19500. Subgroup C2 C6 Method Condition 2036 Test condition E. Not Applicable 4.4.3.3 Group C sample selection. Samples for subgroups in group C shall be chosen at random from any inspection lot containing the intended package type and lead finish procured to the same specification which is submitted to and passes group A tests for conformance inspection. Testing of a subgroup using a single device type enclosed in the intended package type shall be considered as complying with the requirements for that subgroup. 4.4.4 Group E Inspection. Group E inspection shall be performed for qualification or re-qualification only. The tests speci fied in table II herein must be performed to maintain qualification. 4.5 Method of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows. 4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750. 4.5.2 Testing of units. All specified electrical tests, including electrical measurements (end points) and delta requirement tests, shall be performed equally on both sections of the transistor types covered herein, except where the electrical characteristic being evaluated applies to the transistor as a device entity. 4.5.3 Disposition of leads when testing characteristics of each section. During the measurement of the characteristic of each section, the leads of the section not under test shall be open-circuited. 4.5.4 Forward-current-gain ratio. The value for the forward-current-gain ratio for each individual section of a dual unit shall be measured using method 3076 of MIL-STD-750. The forward-current-gain ratio shall be calculated by dividing one of the values by the other. If possible, this ratio shall be measured directly to improve accuracy. 4.5.5 Base-emitter-voltage differential. The base-emitter-voltage differential shall be determined by connecting the emitters of the individual sections together, applying specified electrical test conditions to each individual section in accordance with test condition B, method 3066 of MIL-STD-750, and measuring the absolute value of the voltage between the bases of the individual sections of a dual unit. 4.5.6 Base-emitter-voltage differential change with temperature. The value of the base-emitter-voltage differential shall be measured at the two specified temperatures in accordance with 4.5.5 except that the identities of the individual sections shall be maintained. The absolute value of the algebraic difference between the values at the two temperature extremes shall be calculated. A mathematical formula for this parameter is: | (VBE1 - VBE2) T1 - (VBE1 - VBE2) T2 | 4.5.7 Noise figure test. Noise figure shall be measured using a model No. 2173C/2181 Quan Tech Laboratories test set, or equivalent. Conditions shall be as specified in table I. 7 MIL-PRF-19500/270G 4.5.8 Noise figure (wideband) test. Wideband noise figure shall be measured using a model No. 512 Quan Tech Laboratories test set, or equivalent. Conditions shall be as specified in table I. 4.5.9 Delta Requirements. Delta requirements shall be as specified below: Step 1. 2. 3. 4. 5. Inspection Forward-current transfer ratio Method 3076 MIL-STD-750 Conditions VCE = 5 V dc; Symbol Limit 'hFE3 r 25 percent IC = 1 mA dc Collector to base cutoff current 3036 Saturation voltage and resistance (collector to emitter voltage) 3071 Base emitter voltage (nonsaturated) (absolute value of differential - change with temperature) 3066 Base emitter voltage (nonsaturated) (absolute value of differential - change with temperature) 3066 Bias condition D; 'ICBO2 1/ 100 percent or 2 nA dc, whichever is greater. 'VCE(sat) 2/ r 50 percent mV VCB = 80 V dc IC = 50 mA dc, IB = 5 mA dc Test condition B; VCE = 5 V dc, change from initial reading. dc from initial reading. |'(VBE1 - VBE2)'TA|2 2/ 0.80 mV dc maximum |'(VBE1 - VBE2)'TA|2 2/ 1.0 mV dc maximum IC = 100 PA dc, TA = +25qC and -55qC (see 4.5.6) Test condition B; VCE = 5 V dc, IC = 100 PA dc, TA = +25qC and +125qC (see 4.5.6) 1/ Devices which exceed the group A limits for this test shall not be accepted. 2/ JANS only 8 MIL-PRF-19500/270G TABLE I. Group A inspection. Inspection 1/ MIL-STD-750 Method Symbol Conditions Limits Min Unit Max Subgroup 1 2/ Visual and mechanical 3/ examination 2071 n = 45 devices, c = 0 Solderability 3/, 5/ 2026 n = 15 leads, c = 0 Resistance to solvents 3/, 4/, 5/ 1022 n = 15 devices, c = 0 Temp Cycling 3/, 5/ 1051 Test condition C, 25 cycles. n = 22 devices, c = 0 Heremetic Seal 5/ Fine leak Gross leak 1071 n = 22 devices, c = 0 Group A, subgroup 2 Electrical measurements, 5/ 2037 Precondition TA = +250qC at t = 24 hrs or TA = 300qC at t = 2 hrs n = 11 wires, c = 0 Collector to base cutoff current 3036 Bias condition D, VCB = 100 V dc Breakdown voltage, collector to emitter 3011 Bias condition B, IC = 10 mA dc Breakdown voltage, collector to emitter 3011 Bias condition D, IC = 30 mA dc pulsed (see 4.5.1) Emitter to base cutoff current 3061 Bias condition D, VEB = 7 V dc IEBO1 10 PA dc Collector to base cutoff Current 3036 Bias condition D; VCB = 80 V dc ICBO2 2 nA dc Emitter to base cutoff current 3061 Bias condition D, VEB = 5 V dc IEBO2 2 nA dc Saturation voltage and resistance 3071 IC = 50 mA dc; IB = 5 mA dc VCE(sat) 0.3 V dc Base emitter voltage (saturated) 3066 Test condition A, IC = 50 mA dc; VBE(sat) 0.9 V dc Forward-current transfer ratio 3076 VCE = 5 V dc; IC = 10 PA dc hFE1 25 75 Forward-current transfer ratio 3076 VCE = 5 V dc; IC = 100 PA dc hFE2 30 90 Bond strength 3/, 5/ Subgroup 2 10 ICBO1 PA dc V(BR)CER 80 V dc V(BR)CEO 60 V dc RBE d 10 ohms, pulsed (see 4.5.1) IB = 5 mA dc See footnotes at end of table. 9 MIL-PRF-19500/270G TABLE I. Group A inspection - continued Inspection 1/ MIL-STD-750 Limit Unit Symbol Method Conditions Min Max Subgroup 2 - Continued Forward-current transfer ratio 3076 VCE = 5 V dc; IC = 1 mA dc hFE3 40 120 Forward-current transfer ratio 3076 VCE = 5 V dc; IC = 10 mA dc; pulsed(see 4.5.1) hFE4 50 150 Forward-current transfer ratio (gain ratio) 3076 VCE = 5 V dc; IC = 100 PA dc; pulsed(see 4.5.1) hFE 2 − 1 hFE 2 − 2 0.9 1.0 Forward-current transfer ratio (gain ratio) 3076 VCE = 5 V dc; IC = 1.0 mA dc; pulsed(see 4.5.1) hFE 3− 1 hFE 3− 2 0.9 1.0 Absolute value of base emitter-voltage differential 3066 Test condition B; VCE = 5 V dc; Absolute value of base emitter-voltage differential 3066 Base-emitter-voltage (nonsaturated) (absolute value of differential change with temperature) 3066 Base-emitter-voltage (nonsaturated) (absolute value of differential change with temperature) 3066 6/ 6/ 5 mV dc |VBE - VBE2| 2 5 mV dc |'(VBE1 - VBE2)'TA |1 .8 mV dc |'(VBE1 - VBE2)'TA |2 1 mV dc ICBO3 10 PA dc |VBE - VBE2| 1 IC = 100 PA dc (see 4.5.5) Test condition B; VCE = 5 V dc; IC = 1 mA dc (see 4.5.5) Test condition B; VCE = 5 V dc; IC = 100 PA dc (see 4.5.5) TA = +25qC and -55qC (see 4.5.6) Test condition B, VCE = 5 V dc; IC = 100 PA dc; TA = +25qC and +125qC (see 4.5.6) Subgroup 3 TA = +150qC High temperature operation: Collector to base cutoff current 3036 Bias condition D, VCB = 80 V dc TA = -55qC Low temperature operation: 3076 VCE = 5 V dc; IC = 100 PA dc Small-signal short-circuit forward-current transfer ratio 3206 Common emitter small-signal short-circuit forward-current transfer ratio Small-signal short-circuit input impedance Forward-current transfer ratio hFE5 10 VCE = 5 V dc; IC = 1 mA dc; f = 1 kHz hfe 50 150 3306 VCE = 10 V dc; IC = 50 mA dc; f = 20 MHz |hfe| 3 25 3201 VCB = 5 V dc; IC = 1 mA dc; f = 1 kHz hib 20 30 Subgroup 4 See footnotes at end of table. 10 : MIL-PRF-19500/270G TABLE I. Group A inspection - Continued. Inspection 1/ MIL-STD-750 Method Symbol Conditions Limits Unit Min Max Subgroup 4 Small-signal short circuit input impedance 3201 VCE = 5 V dc; IC = 1 mA dc; f = 1 kHz hie 1,000 4,000 : Small-signal open-circuit output admittance 3216 VCE = 5 V dc; IC = 1 mA dc; f = 1 kHz hoe 0 16 Pmhos Output capacitance (input open circuited) 3236 VCB = 10 V dc; IE = 0; 100 kHz d f d 1 MHz Cobo 15 pF Input capacitance (output open circuited) 3240 VEB = 0.5 V dc; IE = 0; 100 kHz d f d 1 MHz Cibo 85 pF Noise figure 3246 VCE = 10 V dc; IC = 300 PA dc; Rg = 510 :; f = 1 kHz (see 4.5.7) F1 8 dB Noise figure 3246 VCE = 10 V dc; IC = 300 PA dc; Rg = 1 k:; f = 10 kHz (see 4.5.7) F2 8 dB I(collector 1 to 100 nA dc Collector to collector leakage ---- Test condition (see 4.5.3) V(collector 1 to collector 2) = 100 V dc collector2) 1/ For sampling plan, see MIL-PRF-19500. 2/ For resubmission of failed subgroup A1, double the sample size of the failed test or sequence of tests. A failure in group A, subgroup 1 shall not require retest of the entire subgroup. Only the failed test shall be rerun upon submission. 3/ Separate samples may be used. 4/ Not required for laser marked devices. 5/ Not required for JANS devices. 6/ The larger number will be placed in the denominator. 11 MIL-PRF-19500/270G 5. PACKAGING 5.1 Packaging. Packaging shall prevent mechanical damage of the devices during shipping and handling and shall not be detrimental to the device. When actual packaging of material is to be performed by DoD personnel, these personnel need to contact the responsible packaging activity to ascertain requisite packaging requirements. Packaging requirements are maintained by the Inventory Control Points' packaging activity within the Military Department or Defense Agency, or within the Military Departments' System Command. Packaging data retrieval is available from the managing Military Departments' or Defense Agency's automated packaging files, CD-ROM products, or by contacting the responsible packaging activity. 5.2 Marking. Unless otherwise specified (see 6.2), marking shall be in accordance with MIL-STD-129. 6. NOTES (This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.) 6.1 Notes. The notes specified in MIL-PRF-19500 are applicable to this specification. 6.2 Acquisition requirements. See MIL- PRF-19500. 6.3 Qualification. With respect to products requiring qualification, awards will be made only for products which are, at the time of award of contract, qualified for inclusion in Qualified Products List QPL No.19500 whether or not such products have actually been so listed by that date. The attention of the contractors is called to these requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the Federal Government tested for qualification in order that they may be eligible to be awarded contracts or purchase orders for the products covered by this specification. Information pertaining to qualification of products may be obtained from Defense Supply Center Columbus, ATTN: DSCC-VQE, 3990 East Broad Street, Columbus, OH 43216-5000. 6.4 Changes from previous issue. Marginal notations are not used in this revision to identify changes with respect to the previous issue due to the extensiveness of the changes. Custodians: Army - CR Navy - EC Air Force - 17 Preparing activity: DLA - CC (Project 5961-2048-02) Review activities: Army - AR, AV, MI, SM Air Force - 13, 19, 85, 99 Navy - AS, CG, MC, OS, SH 12 STANDARDIZATION DOCUMENT IMPROVEMENT PROPOSAL INSTRUCTIONS 1. The preparing activity must complete blocks 1, 2, 3, and 8. In block 1, both the document number and revision letter should be given. 2. The submitter of this form must complete blocks 4, 5, 6, and 7. 3. The preparing activity must provide a reply within 30 days from receipt of the form. NOTE: This form may not be used to request copies of documents, nor to request waivers, or clarification of requirements on current contracts. Comments submitted on this form do not constitute or imply authorization to waive any portion of the referenced document(s) or to amend contractual requirements. I RECOMMEND A CHANGE: 1. DOCUMENT NUMBER MIL-PRF-19500/270G 2. DOCUMENT DATE 10 August 1998 3. DOCUMENT TITLE SEMICONDUCTOR DEVICE, UNITIZED, DUAL-TRANSISTOR, NPN, SILICON, TYPES 2N2060 AND 2N2060L JAN, JANTX, JANTXV, AND JANS 4. NATURE OF CHANGE (Identify paragraph number and include proposed rewrite, if possible. Attach extra sheets as needed.) 5. REASON FOR RECOMMENDATION 6. SUBMITTER a. NAME (Last, First, Middle initial) c. ADDRESS (Include Zip Code) b. ORGANIZATION d. TELEPHONE (Include Area Code) Commercial DSN FAX EMAIL 7. DATE SUBMITTED 8. PREPARING ACTIVITY a. Point of Contact Alan Barone c. ADDRESS Defense Supply Center Columbus ATTN: DSCC-VAT Columbus, OH 43216-5000 b. TELEPHONE Commercial DSN 614-692-0510 850-0510 FAX 614-692-6939 EMAIL [email protected] IF YOU DO NOT RECEIVE A REPLY WITHIN 45 DAYS, CONTACT: Defense Quality and Standardization Office 5203 Leesburg Pike, Suite 1403, Falls Church, VA 22041-3466 Telephone (703) 756-2340 DSN 289-2340