This is an advance copy of the dated document. The final document from Defense Automated Printing Service may be slightly different in format due to electronic conversion processes. Actual technical content will be the same. The documentation process conversion measures necessary to comply with this revision shall be completed by 15 December 1998 INCH-POUND MIL-PRF-19500/496B 15 September 1998 SUPERSEDING MIL-S-19500/496A(USAF) 1 June 1993 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, DUAL, PNP, UNITIZED, SILICON, TYPES 2N5795 2N5796, AND 2N5796U, JAN, JANTX AND JANTXV This specification is approved for use by all Departments and Agencies of the Department of Defense. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for two electrically isolated, unmatched PNP silicon transistors as one dual unit for HI-speed saturated switching applications. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500. 1.2 Physical dimensions. See figures 1 and 2 (similar to TO - 99). 1.3 Maximum ratings. Unless otherwise specified, TA = +25°C. PT 1/ IC TA = +25°C VC VCE VEB TJ and BO O O TSTG one section total device W W mA dc V dc V dc V dc °C 0.5 0.6 600 60 60 5.0 -65 to +175 1/ For TA ≥ 25°C, Derate linearly 2.86 mW/°C one section, 3.43 mW/°C total. Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAT, 3990 East Broad Street, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter. AMSC N/A DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited. FSC 5961 MIL-PRF-19500/496B 1.4 Primary electrical characteristics. Unless otherwise specified, TA = +25°C. Switching Cobo |hfe| VCB = 10 V dc VCE = 20 V dc IE = 0 100 kHz ≤ f ≤ 1 MHz IC = 20 mA dc f = 100 MHz pF Minimum Maximum 2.0 10.0 8.0 Limits hFE1 ton toff ns ns 50 140 hFE4 1/ VCE(SAT)1 1/ VCE(SAT)2 1/ VBE(SAT)1 1/ VCE = 10 V dc VCE = 10 V dc IC = 150 mA dc IC = 500 ma dc IC = 150 mA dc IC = 100 µA dc IC = 150 mA dc IB = 15 mA dc IB = 50 mA dc IB = 15 mA dc Min Max 2N5795 40 2N5796 75 1/ Pulsed (see 4.5.1). Min Max V dc V dc V dc 40 100 150 300 0.4 1.6 1.3 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements documents cited in sections 3 and 4 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Department of Defense Index of Specifications and Standards (DODISS) and supplement thereto, cited in the solicitation (see 6.2). SPECIFICATION DEPARTMENT OF DEFENSE MIL-PRF-19500 - Semiconductor Devices, General Specification for. STANDARD MILITARY MIL-STD-750 - Test Methods for Semiconductor Devices. (Unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited herein (except for related associated specifications or specification sheets), the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 2 MIL-PRF-19500/496B Symbol Dimensions Inches Notes Min Max Millimeters Min Max CD .335 .370 8.51 9.40 CD1 .305 .335 .335 8.51 CH .150 .185 3.81 4.70 LD .016 .021 0.41 0.53 LC 200 BSC 5.08 BSC TW .028 .034 0.71 TL .029 .045 0.74 LL .500 α 4 0.86 1.14 3 12.70 45° BSC 45° BSC 6 N .100 BSC 2.54 BSC NOTES: 1. Dimension are in inches. 2. Metric equivalents are given for general information only. 3. Measured from maximum diameter of the product. 4. Leads having maximum diameter .019 inch (.483 mm) measured in gaging plan .054 inch (1.37 mm) + .001 inch (.025 mm) .000 inch (.000 mm) below the seating plane of the product shall be within .007 inch (.178 mm) of their true position relative to a maximum width tab. 5. The product may be measured by direct methods or by gauge. 6. Tab centerline. FIGURE 1. Physical dimensions. 3 MIL-PRF-19500/496B Ltr A B C D E F G H J K Dimensions Inches Millimeters Min Max Min Max .240 .250 6.10 6.35 .165 .175 4.19 4.44 .066 .080 1.68 2.03 .026 .039 0.66 0.99 .022 .028 0.56 0.71 .060 .070 1.52 1.78 .082 .098 2.08 2.49 .095 .105 2.41 2.67 .045 .055 1.14 1.39 .060 .070 1.52 1.78 FIGURE 2. Physical dimensions, 2N5796U. 4 MIL-PRF-19500/496B 3. REQUIREMENTS 3.1 Qualification. Devices furnished under this specification shall be products that are authorized by the qualifying activity for listing on the applicable qualified products list before contract award (see 4.2 and 6.3). 3.2 Associated specification. The individual item requirements shall be in accordance with MIL-PRF-19500 and as specified herein. 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500. 3.4 Interface requirements and physical dimensions. The interface requirements and physical dimensions shall be as specified in MIL-PRF-19500 and on figures 1 and 2 herein. 3.4.1 Lead finish. Lead finish shall be solderable as defined in MIL-STD-750, MIL-PRF-19500, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.5 Marking. Marking shall be in accordance with MIL-PRF-19500. 3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table I herein. 3.7 Electrical test requirements. The electrical test requirements shall be the subgroups specified in 4.4.2 and 4.4.3 herein. 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3) c. Conformance inspection (see 4.4). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and herein. 4.3 Screening (JANTX and JANTXV levels only). Screening shall be in accordance with appendix E, MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I herein. devices that exceed the limits of table I herein shall not be acceptable. Screen (see appendix E of MIL-PRF-19500 Measurement JANTX and JANTXV levels 3c Thermal impedance (see 4.3.2) 11 ICBO2 and hFE4 12 See 4.3.1, 80 hours 13 Subgroup 2 of table I herein; ∆ICBO2 = 100 percent of initial value or 5 nA dc; whichever is greater. ∆hFE4 = ± 25 percent of initial value. 5 MIL-PRF-19500/496B 4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: TA = Room ambient as defined in the general requirements of MIL-STD-750, 4.5; VCB = 10 - 30 V dc; PT = 300 mW each section (600 mW total device) NOTE: No heat sink or forced air cooling on the devices shall be permitted. 4.3.2 Thermal impedance (ZθJX measurements). The ZθJX measurements shall be performed in accordance with MIL-STD-750, Method 3131. a. IM measurement current ......................... 5 mA. b. IH forward heating current ....................... 200 mA (minimum). c. tH heating time ......................................... 25 - 30 ms. d. tmd measurement delay time ................... 60 µs maximum. e. VCE collector-emitter voltage ................... 10 V dc minimum. The maximum limit for ZθJX under these test conditions are ZθJX (max) = 72°C/W. 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500, and as specified herein. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500, and table I herein. 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in appendix E, table VIb (JAN, JANTX and JANTXV) of MIL-PRF-19500. (Endpoint electrical measurements shall be in accordance with the applicable tests of table I, subgroup 2 and 4.5.2 herein). 1/ Step Method Condition 1 1039 Steady-state life: Test condition B, 340 hours, VCB = 10 - 30 V dc, TJ = +150°C minimum. No heat sink or forced- air cooling on devices shall be permitted. n = 45, C = 0. 2 1039 The steady state life test of step 1 shall be extended to 1,000 hrs for each die design. Samples shall be selected from a wafer lot every twelve months of wafer production. Group B step 2 shall not be required more than once for any single wafer lot. n = 45, c = 0. 3 1032 High-temperature life (non-operating), TA = +200°C. n = 22, c = 0, t = 340 hours. 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in table VII of MIL-PRF-19500 and in 4.4.3.1 herein for group C testing. Electrical measurements (end points) and delta requirements shall be in accordance with the applicable tests of table I, subgroup 2 and 4.5.2 herein). 4.4.3.1 Group C inspection, table VII (JAN, JANTX, and JANTXV) of MIL-PRF-19500. Subgroup Method C2 2036 C6 Condition Test condition E, not applicable for “UA” designated devices. Not applicable. 1/ Separate samples may be used for each step. In the event of a group B failure, the manufacturer may pull a new sample at double size from either the failed assembly lot or from another assembly lot from the same wafer lot. If the new “assembly lot” option is exercised, the failed assembly lot shall be scrapped. 6 MIL-PRF-19500/496B 4.4.3.2 Group C sample selection. Samples for subgroups in group C shall be chosen at random from any inspection lot containing the intended package type and lead finish procured to the same specification which is submitted to and passes group A tests for conformance inspection. Testing of a subgroup using a single device type enclosed in the intended package type shall be considered as complying with the requirements for that subgroup. 4.4.3.3 Group E inspection. Group E inspection shall be performed for qualification or requalification only. The tests specified in table II herein must be performed to maintain qualification. 4.5 Methods of inspection. Methods of inspection shall be as specified in appropriate tables and as follows. 4.5.1 Pulse measurements. Conditions for pulse measurements shall be as specified in section 4 of MIL-STD-750. 4.5.2 Delta requirements. Delta requirements shall be as specified below: Step Inspection Method MIL-STD-750 Conditions Symbol Limit 1 Collector-base cutoff current 3036 Bias condition D, VCB = 50 V dc ∆ICB02 1/ 100 percent of initial value or ± 5 nA dc, whichever is greater. 2 Forward current transfer ratio 3076 VCE = 10 V dc; IC = 150 mA dc; pulsed see 4.5.1 ∆hFE4 1/ ±25 percent change from initial reading. 1/ Devices which exceed the group A limits for this test shall not be accepted. 7 Unit MIL-PRF-19500/496B TABLE I. Group A inspection. Inspection 1/ MIL-STD-750 Method Symbol Limits Conditions Min Unit Max Subgroup 1 2/ Visual and mechanical inspection 3/ 2071 n = 45 devices, c = 0 Solderability 3/ 2026 n = 15 leads, c = 0 Resistance to solvents 3/ 4/ 1022 n = 15 devices, c = 0 Temp cycling 3/ 1051 Test condition C, 25 cycles. n = 22 devices, c = 0 Heremetic seal Fine leak Gross leak 1071 n = 22 devices, c = 0 Electrical measurements Bond strength 3/ Group A, subgroup 2 2037 Precondition TA = + 250°C at t = 24 hours or TA = + 300°C at t = 2 hours n = 11 wires, c = 0 Subgroup 2 Collector to base cutoff current 3036 Bias condition D; VCBO = 60 V dc ICBO1 10 µA dc Collector to emitter breakdown voltage 3011 Bias condition D; IC = 10 mA dc; pulsed (see 4.5.1) V(BR)CEO Emitter to base cutoff current 3061 Bias condition D; VEB = 5 V dc IEBO1 10 µA dc Collector to base cutoff current 3036 Bias condition D; VCB = 50 V dc ICBO2 10 nA dc Emitter to base cutoff current 3061 Bias condition D; VEB = 3 V dc IEBO2 100 nA dc Forward-current transfer ratio 2N5795 2N5796, 2N5796U 3076 VCE = 10 V dc; IC = 100 µA dc hFE1 Forward-current transfer ratio 2N5795 2N5796, 2N5796U 3076 60 40 75 VCE = 10 V dc; IC = 1.0 mA dc hFE2 40 100 See footnote at end of table. 8 V dc MIL-PRF-19500/496B TABLE I. Group A inspection - Continued. Inspection 1/ MIL-STD-750 Method Symbol Limits Conditions Min Unit Max Subgroup 2 - Continued Forward-current transfer ratio 2N5795 2N5796, 2N5796U 3076 Forward-current transfer ratio 2N5795 2N5796, 2N5796U 3076 Forward-current transfer ratio 2N5795 2N5796, 2N5796U 3076 Forward-current transfer ratio 2N5795 2N5796, 2N5796U 3076 Collector to emitter saturation voltage 3071 IC = 150 mA dc; IB = 15 mA dc; pulsed (see 4.5.1) VCE(sat)1 0.4 V dc Collector to emitter saturation voltage 3071 IC = 500 mA dc; IB = 50 mA dc; pulsed (see 4.5.1) VCE(sat)2 1.6 V dc Base to emitter saturation voltage 3066 Test condition A; IC = 150 mA dc; VBE(sat)1 1.3 V dc Base to emitter saturation voltage 3066 VBE(sat)2 2.6 V dc ICBO3 10 µA dc VCE = 10 V dc; IC = 10 mA dc; pulsed (see 4.5.1) hFE3 40 100 VCE = 10 V dc; IC = 150 mA dc; pulsed (see 4.5.1) hFE4 40 100 VCE = 10 V dc; IC = 300 mA dc; pulsed (see 4.5.1) 150 300 hFE5 20 50 VCE = 1.0 V dc; IC = 150 mA dc; pulsed (see 4.5.1) hFE6 20 50 IB = 15 mA dc; pulsed (see 4.5.1) Test condition A; IC = 500 mA dc; IB = 50 mA dc; pulsed (see 4.5.1) Subgroup 3 High temperature operation Collector to base cutoff current TA = +150°C 3041 Low temperature operation Forward-current transfer ratio 2N5795 2N5796, 2N5796U Bias condition D; VCB = 50 V dc TA = -55°C 3076 VCE = 10 V dc; IC = 150 mA dc; pulsed (see 4.5.1) hFE7 16 40 See footnote at end of table. 9 MIL-PRF-19500/496B TABLE I. Group A inspection - Continued. Inspection 1/ MIL-STD-750 Method Symbol Limits Conditions Min Unit Max Subgroup 4 Magnitude of smallsignal short- circuit forward current transfer ratio 3306 VCE = 20 V dc; IC = 20 mA dc; f = 100 MHz |hfe| Open circuit output capacitance 3236 VCB = 10 V dc; IE = 0; 100 kHz ≤ f ≤ 1 MHz Cobo 8 pF Input capacitance (output open - circuited) 3240 VEB = 0.5 V dc; IC = 0; 100 kHz ≤ f ≤ 1 MHz Cibo 25 pF Pulse response: 3251 Test condition A, (see figure 3) ton 50 ns toff 140 ns I(1C-2C) ± 1.0 nA dc Turn-on time VCC = 30 V dc; IC = 150 mA dc; 2 10 IB1 = 15 mA dc; VBE(OFF) = 0.5 V dc Turn-off time VCC = 30 V dc; IC = 150 mA dc; IB1 = IB2 = 15 ma dc Subgroup 5 V(1C-2C) = ± 50 V dc Collector one to Collector two leakage current (This test applies only to devices of Monolithic construction) Subgroup 6 Not applicable Subgroup 7 Decap internal visual (design verification) 2075 n = 1 device, c = 0 1/ For sampling plan, see MIL-PRF-19500. 2/ For resubmission of failed subgroup A1, double the sample size of the failed test or sequence of tests. A failure in group A, subgroup 1 shall not require retest of the entire subgroup. Only the failed test shall be rerun upon submission. 3/ Separate samples may be used. 4/ Not required for laser marked devices. 10 MIL-PRF-19500/496B TABLE II. Group E inspection (all quality levels) - For qualification only Inspection MIL-STD-750 Method Qualification Conditions Subgroup 1 12 devices c=0 Temperature cycling (air to air) 1051 Hermetic seal 1071 Test condition C, 500 cycles Fine leak Gross leak Electrical measurements See group A, subgroup 2 and 4.5.2 herein. Subgroup 2 Intermittent life 45 devices c=0 1037 Intermittent operation life: VCB = 10 V dc , 6,000 cycles, ∆TJ ≥ +100°C; forced air cooling allowed on cooling cycle only. Electrical measurements See group A, subgroup 2 and 4.5.2 herein. Subgroup 3, 4, and 5 Not applicable 11 MIL-PRF-19500/496B - FIGURE 3. Switching time test circuits. 12 MIL-PRF-19500/496B 5. PACKAGING 5.1 Packaging. Packaging shall prevent mechanical damage of the devices during shipping and handling and shall not be detrimental to the device. When actual packaging of material is to be performed by DoD personnel, these personnel need to contact the responsible packaging activity to ascertain requisite packaging requirements. Packaging requirements are maintained by the Inventory Control Points' packaging activity within the Military Department or Defense Agency, or within the Military Departments' System Command. Packaging data retrieval is available from the managing Military Departments' or Defense Agency's automated packaging files, CD-ROM products, or by contacting the responsible packaging activity. 5.2 Marking. Unless otherwise specified (see 6.2), marking shall be in accordance with MIL-PRF-19500. 6. NOTES (This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.) 6.1 Notes. The notes specified in MIL-PRF-19500 are applicable to this specification. 6.2 Acquisition requirements. See MIL- PRF-19500. 6.3 Qualification. With respect to products requiring qualification, awards will be made only for products which are, at the time of award of contract, qualified for inclusion in Qualified Products List QPL No.19500 whether or not such products have actually been so listed by that date. The attention of the contractors is called to these requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the Federal Government tested for qualification in order that they may be eligible to be awarded contracts or purchase orders for the products covered by this specification. Information pertaining to qualification of products may be obtained from Defense Supply Center Columbus, ATTN: DSCC-VQE, 3990 East Broad Street, Columbus, OH 43216-5000. 6.4 Changes from previous issue. Marginal notations are not used in this revision to identify changes with respect to the previous issue, due to the extensiveness of the changes. Custodians: Army - CR Navy - EC Air Force - 17 NASA - NA Preparing activity: DLA - CC (Project 5961-2049-03) Review activities:) Army - AR, MI, SM Navy - AS, CG, MC, OS Air Force - 13, 19, 85, 99 13 STANDARDIZATION DOCUMENT IMPROVEMENT PROPOSAL INSTRUCTIONS 1. The preparing activity must complete blocks 1, 2, 3, and 8. In block 1, both the document number and revision letter should be given. 2. The submitter of this form must complete blocks 4, 5, 6, and 7. 3. The preparing activity must provide a reply within 30 days from receipt of the form. NOTE: This form may not be used to request copies of documents, nor to request waivers, or clarification of requirements on current contracts. Comments submitted on this form do not constitute or imply authorization to waive any portion of the referenced document(s) or to amend contractual requirements. I RECOMMEND A CHANGE: 1. DOCUMENT NUMBER MIL-PRF-19500/496B 2. DOCUMENT DATE (YYMMDD) 980915 3. DOCUMENT TITLE SEMICONDUCTOR DEVICE, UNITIZED, DUAL TRANSISTOR, PNP, SILICON, TYPES 2N5795 2N5796, AND 2N5796U, JAN, JANTX AND JANTXV 4. NATURE OF CHANGE (Identify paragraph number and include proposed rewrite, if possible. Attach extra sheets as needed.) 5. REASON FOR RECOMMENDATION 6. SUBMITTER a. NAME (Last, First, Middle initial) c. ADDRESS (Include Zip Code) b. ORGANIZATION d. TELEPHONE (Include Area Code) Commercial DSN FAX EMAIL 7. DATE SUBMITTED (YYMMDD) 8. PREPARING ACTIVITY a. Point of contact: Alan Barone c. ADDRESS: Defense Supply Center Columbus, ATTN: DSCC-VAT, 3990 East Broad Street, Columbus, OH 43216-5000 DD Form 1426, OCT 89 b. TELEPHONE Commercial DSN 614-692-0510 850-0510 FAX 614-692-6939 EMAIL [email protected] IF YOU DO NOT RECEIVE A REPLY WITHIN 45 DAYS, CONTACT: Defense Quality and Standardization Office 5203 Leesburg Pike, Suite 1403, Falls Church, VA 22041-3466 Telephone (703) 756-2340 DSN 289-2340 Previous editions are obsolete 198/290