2SD1419 Silicon NPN Epitaxial ADE-208-1150 (Z) 1st. Edition Mar. 2001 Application • Low frequency power amplifier • Complementary pair with 2SB1026 Outline UPAK 1 3 2 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SD1419 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 100 V Emitter to base voltage VEBO 5 V Collector current IC 1 A 2 A 1 W Collector peak current iC(peak)* 1 2 Collector power dissipation PC * Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 10 ms, Duty cycle ≤ 20% 2. Value on the alumina ceramic board (12.5 x 20 x 0.7 mm) Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO 120 — — V I C = 10 µA, IE = 0 Collector to emitter breakdown V(BR)CEO voltage 100 — — V I C = 1 mA, RBE = ∞ Emitter to base breakdown voltage V(BR)EBO 5 — — V I E = 10 µA, IC = 0 Collector cutoff current I CBO — — 10 µA VCB = 100 V, IE = 0 60 — 200 VCE = 5 V, IC = 150 mA*2 hFE2 30 — — VCE = 5 V, IC = 500 mA*2 Collector to emitter saturation voltage VCE(sat) — — 1 V I C = 500 mA, IB = 50 mA*2 Base to emitter voltage VBE — — 1.5 V VCE = 5 V, IC = 150 mA*2 Gain bandwidth product fT — 140 — MHz VCE = 5 V, IC = 150 mA*2 Collector output capacitance Cob — 12 — pF VCB = 10 V, IE = 0, f = 1 MHz DC current transfer ratio hFE1* 1 Notes: 1. The 2SD1419 is grouped by h FE1 as follows. 2. Pulse test Mark DD DE hFE1 60 to 120 100 to 200 See characteristic curves of 2SD1418. 2 2SD1419 Maximum Collector Dissipation Curve Collector Power Dissipation PC (W) (on the alumina ceramic board) 1.2 0.8 0.4 0 50 100 150 Ambient Temperature Ta (°C) 3 2SD1419 Package Dimensions As of January, 2001 Unit: mm 1.5 1.5 3.0 0.44 Max Hitachi Code JEDEC EIAJ Mass (reference value) 4 (0.2) (2.5) (1.5) (0.4) 0.53 Max 0.48 Max 1.5 ± 0.1 0.44 Max 2.5 ± 0.1 4.25 Max φ1 0.8 Min 1.8 Max 0.4 4.5 ± 0.1 UPAK — Conforms 0.050 g 2SD1419 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. 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(Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road, Hung-Kuo Building, Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon, Hong Kong Tel : <852>-(2)-735-9218 Fax : <852>-(2)-730-0281 URL : http://www.hitachi.com.hk Copyright Hitachi, Ltd., 2000. All rights reserved. Printed in Japan. Colophon 2.0 5