Features • Write Protect Pin for Hardware Data Protection – Utilizes Different Array Protection Compared to the AT24C02/04/08/16 • Low-voltage and Standard-voltage Operation • • • • • • • • • • • • – 2.7 (VCC = 2.7V to 5.5V) – 1.8 (VCC = 1.8V to 5.5V) Internally Organized 256 x 8 (2K), 512 x 8 (4K), 1024 x 8 (8K) or 2048 x 8 (16K) 2-wire Serial Interface Schmitt Trigger, Filtered Inputs for Noise Suppression Bi-directional Data Transfer Protocol 100 kHz (1.8V, 2.5V, 2.7V) and 400 kHz (5V) Clock Rate for AT24C02A, 04A and 08A 100 kHz (1.8V) and 400 kHz (2.5V, 2.7V and 5V) Clock Rate for AT24C16A 8-byte Page (2K), 16-byte Page (4K, 8K, 16K) Write Modes Partial Page Writes are Allowed Self-timed Write Cycle (10 ms max) High Reliability – Endurance: One Million Write Cycles – Data Retention: 100 Years Automotive Grade and Extended Temperature Devices Available 8-lead JEDEC SOIC, 8-pin PDIP, and 8-lead TSSOP Packages 2-wire Serial EEPROM 2K (256 x 8) 4K (512 x 8) 8K (1024 x 8) 16K (2048 x 8) Description The AT24C02A/04A/08A/16A provides 2048/4096/8192/16384 bits of serial electrically erasable and programmable read only memory (EEPROM) organized as 256/512/1024/2048 words of 8 bits each. The device is optimized for use in many industrial and commercial applications where low power and low voltage operation are essential. The AT24C02A/04A/08A/16A is available in space saving 8-pin PDIP, 8-lead JEDEC SOIC, and 8-lead TSSOP (AT24C02A/04A) packages and is accessed via a 2-wire serial interface. In addition, the entire family is available in 2.7V (2.7V to 5.5V) and 1.8V (1.8V to 5.5V) versions. AT24C02A AT24C04A AT24C08A AT24C16A Pin Configurations Pin Name Function A0 - A2 Address Inputs SDA Serial Data SCL Serial Clock Input WP Write Protect NC No-connect 8-pin PDIP A0 A1 A2 GND 1 2 3 4 8 7 6 5 VCC WP SCL SDA 8-lead SOIC A0 A1 A2 GND 1 2 3 4 VCC WP SCL SDA 8 7 6 5 8-lead TSSOP A0 A1 A2 GND 1 2 3 4 8 7 6 5 VCC WP SCL SDA Rev. 0976D–12/01 1 Absolute Maximum Ratings* Operating Temperature.................................. -55°C to +125°C Storage Temperature ..................................... -65°C to +150°C Voltage on Any Pin with Respect to Ground .....................................-1.0V to +7.0V Maximum Operating Voltage .......................................... 6.25V *NOTICE: Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. DC Output Current........................................................ 5.0 mA Block Diagram Pin Description SERIAL CLOCK (SCL): The SCL input is used to positive edge clock data into each EEPROM device and negative edge clock data out of each device. SERIAL DATA (SDA): The SDA pin is bidirectional for serial data transfer. This pin is open-drain driven and may be wire-ORed with any number of other open-drain or open collector devices. DEVICE/PAGE ADDRESSES (A2, A1, A0): The A2, A1 and A0 pins are device address inputs that must be hard wired for the AT24C02A. As many as eight 2K devices may be addressed on a single bus system (device addressing is discussed in detail under the Device Addressing section). The AT24C04A uses the A2 and A1 inputs for hard wire addressing and a total of four 4K devices may be addressed on a single bus system. The A0 pin is a no-connect. 2 AT24C02A/04A/08A/16A 0976D–12/01 AT24C02A/04A/08A/16A The AT24C08A only uses the A2 input for hardwire addressing and a total of two 8K devices may be addressed on a single bus system. The A0 and A1 pins are noconnects. The AT24C16A does not use the device address pins, which limits the number of devices on a single bus to one. The A0, A1 and A2 pins are no-connects. WRITE PROTECT (WP): The AT24C02A/04A/08A/16A have a Write Protect pin that provides hardware data protection. The Write Protect pin allows normal read/write operations when connected to ground (GND). When the Write Protect pin is connected to V CC, the write protection feature is enabled and operates as shown in the following table. 24C02A 24C04A 24C08A 24C16A At VCC Upper Half (1K) Array Upper Half (2K) Array Full (8K) Array Full (16K) Array At GND Memory Organization Part of the Array Protected WP Pin Status Normal Read/Write Operations AT24C02A, 2K SERIAL EEPROM: Internally organized with 32 pages of 8 bytes each, the 2K requires an 8-bit data word address for random word addressing. AT24C04A, 4K SERIAL EEPROM: The 4K is internally organized with 32 pages of 16 bytes each. Random word addressing requires a 9-bit data word address. AT24C08A, 8K SERIAL EEPROM: The 8K is internally organized with 64 pages of 16 bytes each. Random word addressing requires a 10-bit data word address. AT24C16A, 16K SERIAL EEPROM: The 16K is internally organized with 128 pages of 16 bytes each. Random word addressing requires an 11-bit data word address. Pin Capacitance Applicable over recommended operating range from TA = 25°C, f = 1.0 MHz, VCC = +1.8V. Symbol Test Condition CI/O CIN Note: Max Units Conditions Input/Output Capacitance (SDA) 8 pF VI/O = 0V Input Capacitance (A0, A1, A2, SCL) 6 pF VIN = 0V 1. This parameter is characterized and is not 100% tested. 3 0976D–12/01 DC Characteristics Applicable over recommended operating range from: TAI = -40°C to +85°C, VCC = +1.8V to +5.5V, TAC = 0°C to +70°C, VCC = +1.8V to +5.5V (unless otherwise noted). Symbol Parameter VCC1 Supply Voltage VCC2 Max Units 1.8 5.5 V Supply Voltage 2.5 5.5 V VCC3 Supply Voltage 2.7 5.5 V VCC4 Supply Voltage 4.5 5.5 V ICC Supply Current VCC = 5.0V READ at 100 kHz 0.4 1.0 mA ICC Supply Current VCC = 5.0V WRITE at 100 kHz 2.0 3.0 mA ISB1 Standby Current VCC = 1.8V VIN = VCC or VSS 0.6 3.0 µA ISB2 Standby Current VCC = 2.5V VIN = VCC or VSS 1.4 4.0 µA ISB3 Standby Current VCC = 2.7V VIN = VCC or VSS 1.6 4.0 µA ISB4 Standby Current VCC = 5.0V VIN = VCC or VSS 8.0 18.0 µA ILI Input Leakage Current VIN = VCC or VSS 0.10 3.0 µA ILO Output Leakage Current VOUT = VCC or VSS 0.05 3.0 µA -0.6 VCC x 0.3 V VCC x 0.7 VCC + 0.5 V VIL Input Low Level Test Condition (1) (1) Min Typ VIH Input High Level VOL2 Output Low Level VCC = 3.0V IOL = 2.1 mA 0.4 V VOL1 Output Low Level VCC = 1.8V IOL = 0.15 mA 0.2 V Note: 4 1. VIL min and VIH max are reference only and are not tested. AT24C02A/04A/08A/16A 0976D–12/01 AT24C02A/04A/08A/16A AC Characteristics Applicable over recommended operating range from TA = -40°C to +85°C, VCC = +1.8V to +5.5V, CL = 1 TTL Gate and 100 pF (unless otherwise noted). AT24C02A/ 04A/08A/16A 1.8V Symbol Parameter fSCL Clock Frequency, SCL tLOW Clock Pulse Width Low tHIGH Clock Pulse Width High Min Max AT2402A/04A/ 08A 2.5V, 2.7V Min 100 Max AT24C16A 2.5V Min 100 Max AT24C02A/ 04A/08A/16A 5.0V Min 400 Max Units 400 kHz 4.7 4.7 1.3 1.2 µs 4.0 4.0 0.6 0.6 µs (1) tI Noise Suppression Time tAA Clock Low to Data Out Valid 0.1 tBUF Time the bus must be free before a new transmission can start(2) 4.7 4.7 1.3 1.2 µs tHD.STA Start Hold Time 4.0 4.0 0.6 0.6 µs tSU.STA Start Set-up Time 4.7 4.7 0.6 0.6 µs tHD.DAT Data In Hold Time 0 0 0 0 µs tSU.DAT Data In Set-up Time 200 200 100 100 ns tR Inputs Rise Time(2) 1.0 1.0 0.3 0.3 µs tF Inputs Fall Time(2) 300 300 300 300 ns tSU.STO Stop Set-up Time 4.7 4.7 0.6 0.6 µs tDH Data Out Hold Time 100 100 100 50 ns tWR Write Cycle Time Endurance(2) 5.0V, 25°C, Page Mode Notes: 100 4.5 100 0.1 10 1M 4.5 100 0.2 10 1M 0.9 0.1 10 1M 50 ns 0.9 µs 10 1M ms Write Cycles 1. This parameter is characterized and is not 100% tested (TA = 25°C). 2. This parameter is characterized and is not 100% tested. 5 0976D–12/01 Device Operation CLOCK and DATA TRANSITIONS: The SDA pin is normally pulled high with an external device. Data on the SDA pin may change only during SCL low time periods (refer to Data Validity timing diagram). Data changes during SCL high periods will indicate a start or stop condition as defined below. START CONDITION: A high-to-low transition of SDA with SCL high is a start condition which must precede any other command (refer to Start and Stop Definition timing diagram). STOP CONDITION: A low-to-high transition of SDA with SCL high is a stop condition. After a read sequence, the stop command will place the EEPROM in a standby power mode (refer to Start and Stop Definition timing diagram). ACKNOWLEDGE: All addresses and data words are serially transmitted to and from the EEPROM in 8 bit words. The EEPROM sends a zero to acknowledge that it has received each word. This happens during the ninth clock cycle. STANDBY MODE: The AT24C02A/04A/08A/16A features a low power standby mode which is enabled: (a) upon power-up and (b) after the receipt of the STOP bit and the completion of any internal operations. MEMORY RESET: After an interruption in protocol, power loss or system reset, any 2wire part can be reset by following these steps: (a) Clock up to 9 cycles, (b) look for SDA high in each cycle while SCL is high and then (c) create a start condition as SDA is high. 6 AT24C02A/04A/08A/16A 0976D–12/01 AT24C02A/04A/08A/16A Bus Timing (SCL: Serial Clock, SDA: Serial Data I/O) Write Cycle Timing (SCL: Serial Clock, SDA: Serial Data I/O) SCL SDA 8th BIT ACK WORD n tWR(1) STOP CONDITION Note: START CONDITION 1. The write cycle time tWR is the time from a valid stop condition of a write sequence to the end of the interval clear/write cycle. 7 0976D–12/01 Data Validity Start and Stop Definition Output Acknowledge 8 AT24C02A/04A/08A/16A 0976D–12/01 AT24C02A/04A/08A/16A Device Addressing The 2K, 4K and 8K EEPROM devices all require an 8 bit device address word following a start condition to enable the chip for a read or write operation (refer to Figure 1). The device address word consists of a mandatory one, zero sequence for the first four most significant bits as shown. This is common to all the EEPROM devices. The next 3 bits are the A2, A1 and A0 device address bits for the 2K EEPROM. These 3 bits must compare to their corresponding hard-wired input pins. The 4K EEPROM only uses the A2 and A1 device address bits with the third bit being a memory page address bit. The two device address bits must compare to their corresponding hard-wired input pins. The A0 pin is no-connect. The 8K EEPROM only uses the A2 device address bit with the next 2 bits being for memory page addressing. The A2 bit must compare to its corresponding hard-wired input pin. The A1 and A0 pins are no-connect. The 16K EEPROM does not use the device address pins, which limits the number of devices on a single bus to one. The A0, A1 and A2 pins are no-connects. The eighth bit of the device address is the read/write operation select bit. A read operation is initiated if this bit is high and a write operation is initiated if this bit is low. Upon a compare of the device address, the EEPROM will output a zero. If a compare is not made, the chip will return to a standby state. Write Operations BYTE WRITE: A write operation requires an 8 bit data word address following the device address word and acknowledgement. Upon receipt of this address, the EEPROM will again respond with a zero and then clock in the first 8 bit data word. Following receipt of the 8 bit data word, the EEPROM will output a zero and the addressing device, such as a microcontroller, must terminate the write sequence with a stop condition. At this time the EEPROM enters an internally-timed write cycle, t WR , to the nonvolatile memory. All inputs are disabled during this write cycle and the EEPROM will not respond until the write is complete (refer to Figure 2). PAGE WRITE: The 2K EEPROM is capable of an 8-byte page write, and the 4K, 8K and 16K devices are capable of 16-byte page writes. A page write is initiated the same as a byte write, but the microcontroller does not send a stop condition after the first data word is clocked in. Instead, after the EEPROM acknowledges receipt of the first data word, the microcontroller can transmit up to seven (2K) or fifteen (4K, 8K, 16K) more data words. The EEPROM will respond with a zero after each data word received. The microcontroller must terminate the page write sequence with a stop condition (refer to Figure 3). The data word address lower three (2K) or four (4K, 8K, 16K) bits are internally incremented following the receipt of each data word. The higher data word address bits are not incremented, retaining the memory page row location. When the word address, internally generated, reaches the page boundary, the following byte is placed at the beginning of the same page. If more than eight (2K) or sixteen (4K, 8K, 16K) data words are transmitted to the EEPROM, the data word address will “roll over” and previous data will be overwritten. ACKNOWLEDGE POLLING: Once the internally-timed write cycle has started and the EEPROM inputs are disabled, acknowledge polling can be initiated. This involves sending a start condition followed by the device address word. The read/write bit is representative of the operation desired. Only if the internal write cycle has completed will the EEPROM respond with a zero allowing the read or write sequence to continue. 9 0976D–12/01 Read Operations Read operations are initiated the same way as write operations with the exception that the read/write select bit in the device address word is set to one. There are three read operations: current address read, random address read and sequential read. CURRENT ADDRESS READ: The internal data word address counter maintains the last address accessed during the last read or write operation, incremented by one. This address stays valid between operations as long as the chip power is maintained. The address “roll over” during read is from the last byte of the last memory page to the first byte of the first page. The address “roll over” during write is from the last byte of the current page to the first byte of the same page. Once the device address with the read/write select bit set to one is clocked in and acknowledged by the EEPROM, the current address data word is serially clocked out. The microcontroller does not respond with an input zero but does generate a following stop condition (refer to Figure 4). RANDOM READ: A random read requires a “dummy” byte write sequence to load in the data word address. Once the device address word and data word address are clocked in and acknowledged by the EEPROM, the microcontroller must generate another start condition. The microcontroller now initiates a current address read by sending a device address with the read/write select bit high. The EEPROM acknowledges the device address and serially clocks out the data word. The microcontroller does not respond with a zero but does generate a following stop condition (refer to Figure 5). SEQUENTIAL READ: Sequential reads are initiated by either a current address read or a random address read. After the microcontroller receives a data word, it responds with an acknowledge. As long as the EEPROM receives an acknowledge, it will continue to increment the data word address and serially clock out sequential data words. When the memory address limit is reached, the data word address will “roll over” and the sequential read will continue. The sequential read operation is terminated when the microcontroller does not respond with a zero but does generate a following stop condition (refer to Figure 6). Figure 1. Device Address 2K 1 0 1 0 A2 MSB 10 A1 A0 R/W LSB A1 P0 R/W 4K 1 0 1 0 A2 8K 1 0 1 0 A2 P 1 P0 R/W 16K 1 0 1 0 P2 P1 P0 R/W AT24C02A/04A/08A/16A 0976D–12/01 AT24C02A/04A/08A/16A Figure 2. Byte Write S T A R T DEVICE ADDRESS W R I T E WORD ADDRESS S T O P DATA SDA LINE M S B L R A S / C BW K M S B L S B A C K A C K Figure 3. Page Write S T A R T DEVICE ADDRESS W R I T E WORD ADDRESS (n) DATA (n) DATA (n + 1) S T O P DATA (n + x) SDA LINE M S B L R A S / C BW K A C K A C K A C K A C K Figure 4. Current Address Read S T A R T DEVICE ADDRESS R E A D S T O P SDA LINE M S B L R A S / C BW K DATA N O A C K 11 0976D–12/01 Figure 5. Random Read S T A R T DEVICE ADDRESS W R I T E S T A R T WORD ADDRESS n R E A D DEVICE ADDRESS S T O P SDA LINE M S B L R A S / C BW K M S B L A S C B K M S B L S B A C K DATA n N O A C K DUMMY WRITE Figure 6. Sequential Read 12 AT24C02A/04A/08A/16A 0976D–12/01 AT24C02A/04A/08A/16A AT24C02A Ordering Information tWR (max) (ms) ICC (max) (µA) ISB (max) (µA) fMAX (kHz) 10 1500 4 10 800 3 Ordering Code Package Operation Range 100 AT24C02A-10PI-2.7 AT24C02AN-10SI-2.7 AT24C02A-10TI-2.7 8P3 8S1 8T Industrial (-40°C to 85°C) 100 AT24C02A-10PI-1.8 AT24C02AN-10SI-1.8 AT24C02A-10TI-1.8 8P3 8S1 8T Industrial (-40°C to 85°C) Package Type 8P3 8-pin, 0.300" Wide, Plastic Dual Inline Package (PDIP) 8S1 8-lead, 0.150" Wide, Plastic Gull Wing Small Outline (JEDEC SOIC) 8T 8-lead, 0.170" Wide, Thin Shrink Small Outline Package (TSSOP) Options -2.7 Low Voltage (2.7V to 5.5V) -1.8 Low Voltage (1.8V to 5.5V) 13 0976D–12/01 AT24C04A Ordering Information tWR (max) (ms) ICC (max) (µA) ISB (max) (µA) fMAX (kHz) 10 1500 4 10 800 3 Ordering Code Package Operation Range 100 AT24C04A-10PI-2.7 AT24C04AN-10SI-2.7 AT24C04A-10TI-2.7 8P3 8S1 8T Industrial (-40°C to 85°C) 100 AT24C04A-10PI-1.8 AT24C04AN-10SI-1.8 AT24C04A-10TI-1.8 8P3 8S1 8T Industrial (-40°C to 85°C) Package Type 8P3 8-pin, 0.300" Wide, Plastic Dual Inline Package (PDIP) 8S1 8-lead, 0.150" Wide, Plastic Gull Wing Small Outline (JEDEC SOIC) 8T 8-lead, 0.170" Wide, Thin Shrink Small Outline Package (TSSOP) Options -2.7 Low Voltage (2.7V to 5.5V) -1.8 Low Voltage (1.8V to 5.5V) 14 AT24C02A/04A/08A/16A 0976D–12/01 AT24C02A/04A/08A/16A AT24C08A Ordering Information tWR (max) (ms) ICC (max) (µA) ISB (max) (µA) fMAX (kHz) 10 1500 4 10 800 3 Ordering Code Package Operation Range 100 AT24C08A-10PI-2.7 AT24C08AN-10SI-2.7 8P3 8S1 Industrial (-40°C to 85°C) 100 AT24C08A-10PI-1.8 AT24C08AN-10SI-1.8 8P3 8S1 Industrial (-40°C to 85°C) Package Type 8P3 8-pin, 0.300" Wide, Plastic Dual Inline Package (PDIP) 8S1 8-lead, 0.150" Wide, Plastic Gull Wing Small Outline (JEDEC SOIC) Options -2.7 Low Voltage (2.7V to 5.5V) -1.8 Low Voltage (1.8V to 5.5V) 15 0976D–12/01 AT24C16A Ordering Information tWR (max) (ms) ICC (max) (µA) ISB (max) (µA) fMAX (kHz) 10 1500 4 10 800 3 Ordering Code Package Operation Range 400 AT24C16A-10PI-2.7 AT24C16AN-10SI-2.7 8P3 8S1 Industrial (-40°C to 85°C) 100 AT24C16A-10PI-1.8 AT24C16AN-10SI-1.8 8P3 8S1 Industrial (-40°C to 85°C) Package Type 8P3 8-pin, 0.300" Wide, Plastic Dual Inline Package (PDIP) 8S1 8-lead, 0.150" Wide, Plastic Gull Wing Small Outline (JEDEC SOIC) Options -2.7 Low Voltage (2.7V to 5.5V) -1.8 Low Voltage (1.8V to 5.5V) 16 AT24C02A/04A/08A/16A 0976D–12/01 AT24C02A/04A/08A/16A Packaging Information 8P3 – PDIP D PIN 1 E1 A B1 SEATING PLANE A1 L B B2 e (4 PLACES) E COMMON DIMENSIONS (Unit of Measure = mm) C eC SYMBOL eB Notes: 1. This package conforms to JEDEC reference MS-001 BA. 2. Dimensions D and E1 do not include mold Flash or Protrusion. Mold Flash or Protrusion shall not exceed 0.25 mm (0.010"). R NOM MAX A – – 4.318 A1 0.381 – – D 9.144 – 9.652 E 7.620 – 8.255 E1 6.096 – 6.604 B 0.406 – 0.508 B1 1.397 – 1.651 B2 0.762 – 1.143 L 3.175 – 3.429 C 0.203 – 0.356 eB – – 10.922 eC 0.000 – 1.524 e TITLE 2325 Orchard Parkway 8P3, 8-lead (0.300"/7.62 mm Wide) Plastic Dual San Jose, CA 95131 Inline Package (PDIP) MIN NOTE Note 2 Note 2 2.540 TYP 09/28/01 DRAWING NO. REV. 8P3 B 17 0976D–12/01 8S1 – JEDEC SOIC 3 2 1 H N Top View e B A D COMMON DIMENSIONS (Unit of Measure = mm) Side View A2 C L SYMBOL MIN NOM MAX A – – 1.75 B – – 0.51 C – – 0.25 D – – 5.00 E – – 4.00 e E End View NOTE 1.27 BSC H – – 6.20 L – – 1.27 Note: These drawings are for general information only. Refer to JEDEC Drawing MS-012 for proper dimensions, tolerances, datums, etc. 10/10/01 R 18 1150 E. Cheyenne Mtn. Blvd. Colorado Springs, CO 80906 TITLE 8S1, 8-lead (0.150" Wide Body), Plastic Gull Wing Small Outline (JEDEC SOIC) DRAWING NO. REV. 8S1 A AT24C02A/04A/08A/16A 0976D–12/01 AT24C02A/04A/08A/16A 8T– TSSOP Top View 3 2 1 E E1 N Side View b A2 COMMON DIMENSIONS (Unit of Measure = mm) SYMBOL A e D D NOM MAX NOTE 2.90 3.00 3.10 2, 5 4.40 4.50 3, 5 E E1 End View MIN 6.40 BSC 4.30 A – – 1.20 A2 0.80 1.00 1.05 b 0.19 – 0.30 e L L L1 4 0.65 BSC 0.45 L1 0.60 0.75 1.00 REF Notes: 1. These drawings are for general information only. Refer to JEDEC Drawing MO-153, Variation AA, for proper dimensions, tolerances, datums, etc. 2. Dimension "D" does not include mold Flash, protrusions or gate burrs. Mold Flash, protrusions and gate burrs shall not exceed 0.15 mm (0.006 in) per side. 3. Dimension "E1" does not include inter-lead Flash or protrusions. Inter-lead Flash and protrusions shall not exceed 0.25 mm (0.010 in) per side. 4. Dimension "b" does not include Dambar protrusion. Allowable Dambar protrusion shall be 0.08 mm total in excess of the "b" dimension at maximum material condition. Dambar cannot be located on the lower radius of the foot. Minimum space between protrusion and adjacent lead is 0.07 mm. 5. Dimension "D" and "E1" to be determined at Datum Plane H. 10/26/01 R 1150 E. Cheyenne Mtn. Blvd. Colorado Springs, CO 80906 TITLE 8T, 8-lead, 4.4 mm Body, Plastic Thin Shrink Small Outline Package (TSSOP) DRAWING NO. 8T REV. A 19 0976D–12/01 Atmel Headquarters Atmel Product Operations Corporate Headquarters Atmel Colorado Springs 2325 Orchard Parkway San Jose, CA 95131 TEL (408) 441-0311 FAX (408) 487-2600 Europe Atmel SarL Route des Arsenaux 41 Casa Postale 80 CH-1705 Fribourg Switzerland TEL (41) 26-426-5555 FAX (41) 26-426-5500 Asia Atmel Asia, Ltd. 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The Company assumes no responsibility for any errors which may appear in this document, reserves the right to change devices or specifications detailed herein at any time without notice, and does not make any commitment to update the information contained herein. No licenses to patents or other intellectual property of Atmel are granted by the Company in connection with the sale of Atmel products, expressly or by implication. Atmel’s products are not authorized for use as critical components in life support devices or systems. ATMEL ® is the registered trademark of Atmel. Other terms and product names may be the trademarks of others. Printed on recycled paper. 0976D–12/01/0M