IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package CMBT2369 SILICON PLANAR EPITAXIAL SWITCHING TRANSISTOR N–P N transistor Marking CMBT2369 = lJ PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS Collector–base voltage (open emitter) Collector–emitter voltage (VBE = 0) Collector–emitter voltage (open base) Collector current (d.c. value) Total power dissipation up to Tamb = 25 °C D.C. current gain IC = 10mA; VCE = 1 V IC = 100 mA; VCE = 2 V Storage time ICon = IBon = IBoff = 10 mA Continental Device India Limited Data Sheet VCB0 VCES VCE0 IC Ptot max. max. max. max. max. hFE hFE > ts < 40 40 15 500 250 V V V mA mW 40 to 120 20 13 ns Page 1 of 3 CMBT2369 RATINGS (at TA = 25°C unless otherwise specified) Limiting values Collector–base voltage (open emitter) Collector–emitter voltage (VBE = 0) Collector–emitter voltage (open base) Emitter–base voltage (open collector) Collector current (d.c. value) Total power dissipation up to Tamb = 25 °C Storage temperature Junction temperature VCB0 VCES VCE0 VEB0 IC Ptot Tstg Tj max. max. max. max. max. max. –55 to max. 40 V 40 V 15 V 4,5 V 500 mA 250 mW 150° C 150 ° C THERMAL RESISTANCE From junction to ambient in free air Rth j–a = 500 K/W < < 400 nA 30 mA CHARACTERISTICS (at TA = 25°C unless otherwise specified) Tj = 25 °C unless otherwise specified Collector cut–off current ICB0 IE = 0; VCB = 20 V ICB0 IE = 0; VCB = 20V; Tj = 125°C Saturation voltages VCEsat IC = 10 mA; lB = 1 mA VBEsat D.C. current gain hFE IC = 10mA; VCE = 1 V hFE IC = 10mA; VCE = 1 V; Tamb = –55°C hFE IC = 100 mA; VCE = 2 V Output capacitance at f = 1 MHz Co IE = 0; VCB = 5V Small–signal current gain hfe IC = 1,0mA; VCE = 10V; f = 100MHz; Tamb = 25°C Breakdown voltages V(BR)CEO IC = 10 mA; lB = 0 V(BR)CBO IC = 10mA; IE = 0 V(BR)EBO IC = 0; IE = 10mA V(BR)CES IC = 10mA; VBE = 0 < 0,25 V 0,70 to 0,85 V > > 40 to 120 20 20 < 4,0 pF > 5,0 min. min. min. min. 15 40 4,5 40 V V V V Switching times at Tamb = 25 °C Storage time ICon = IBon = –IBoff = 10 mA ts typ. < 5,0 ns 13 ns Turn–on time IC = 10mA; IBon = 3mA; VCC = 3V Turn–off time IC = 10mA; IBon = 3mA; IBoff = 1,5mA; VCC = 3V t on t on toff toff typ. < typ. < 8,0 12 10 18 Continental Device India Limited Data Sheet ns ns ns ns Page 2 of 3 Notes Disclaimer The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/ CD is believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product; neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own risk and CDIL will not be responsible for any damages resulting from such sale(s). CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice. CDIL is a registered Trademark of Continental Device India Limited C-120 Naraina Industrial Area, New Delhi 110 028, India. Telephone + 91-11-579 6150 Fax + 91-11-579 9569, 579 5290 e-mail [email protected] www.cdil.com Continental Device India Limited Data Sheet Page 3 of 3