IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package CMBT5550 SILICON N–P–N HIGH–VOLTAGE TRANSISTOR N–P–N transistor Marking CMBT5550 = 1F PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS Collector–base voltage (open emitter) Collector–emitter voltage (open base) Collector current Total power dissipation up to Tamb = 25°C Collector–emitter saturation voltage IC = 50 mA; IB = 5 mA D.C. current gain IC = 10 mA; VCE = 5 V RATINGS (at TA = 25°C unless otherwise specified) Limiting values Collector–base voltage (open emitter) Collector–emitter voltage (open base) Emitter–base voltage (open collector) Collector current Continental Device India Limited Data Sheet VCBO VCEO IC Ptot max. max. max. max 160 140 600 250 VCEsat max. 0.25 V hFE VCBO VCEO VEBO IC V V mA mW 60 to 250 max. max. max. max. 160 140 6 600 V V V mA Page 1 of 3 CMBT5550 Total power dissipation up to Tamb = 25°C Storage temperature Junction temperature Ptot Tstg Tj THERMAL RESISTANCE from junction to ambient Rth j–a CHARACTERISTICS (at TA = 25°C unless otherwise specified) Collector cut–off current ICBO IE = 0; VCB = 100 V ICBO IE = 0; VCB = 100 V; Tamb = 100 °C Emitter cut–off current IEBO IC = 0; VEB = 4.0 V Breakdown voltages V(BR)CEO IC = 1 mA; IB = 0 V(BR)CBO IC = 10 mA; IE = 0 V(BR)EBO IC = 0; IE = 10 mA Saturation voltages VCEsat IC = 10 mA; IB = 1 mA VBEsat IC = 50 mA; IB = 5 mA D.C. current gain IC = 1 mA; VCE = 5 V IC = 10 mA; VCE = 5 V IC = 10 mA; VCE = 10 V; Tamb = 25 °C Continental Device India Limited Data Sheet 500 K/W max. max. 100 nA 100 mA max. 50 nA min. min. min. 140 V 160 V 6 V max. max. 0.15 V 1 V VCEsat VBEsat max. max. 0.25 V 1.2 V hFE min. min. max. 60 60 250 hFE min. 20 Co max. 6 pF Ci max. 30 pF fT min. max. 100 MHz 300 MHz hFE IC = 50 mA; VCE = 5 V Output capacitance at f = 1 MHz IE = 0; VCB = 10 V Input capacitance at f = 1 MHz IC = 0; VEB = 10 V Transition frequency at f = 100 MHz max 250 mW –55 to +150 ° C max. 150 ° C Page 2 of 3 Notes Disclaimer The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/ CD is believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product; neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own risk and CDIL will not be responsible for any damages resulting from such sale(s). CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice. CDIL is a registered Trademark of Continental Device India Limited C-120 Naraina Industrial Area, New Delhi 110 028, India. Telephone + 91-11-579 6150 Fax + 91-11-579 9569, 579 5290 e-mail [email protected] www.cdil.com Continental Device India Limited Data Sheet Page 3 of 3