IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package CMBT2222 CMBT2222A SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N silicon transistors Marking CMBT2222 = lB CMBT2222A = lP PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS CMBT2222 Collector–base voltage (open ernitter) VCB0 Collector–emitter voltage (open base) VCE0 Emitter base voltage (open collector) VEB0 Collector current (d.c.) IC Total power dissipation up to Tamb = 25 °C Ptot D.C. current gain hFE IC = 150mA; VCE = 10V hFE lC = 500mA; VCE = 10V Transition frequency at f = 100 MHz fT IC = 20 mA; VCE = 20 V Continental Device India Limited Data Sheet CMBT2222A max. max. max. max. max. 60 30 5,0 75 40 6,0 > 30 40 > 250 300 600 250 V V V mA mW 100 to 300 MHz Page 1 of 4 CMBT2222 CMBT2222A RATINGS (at TA = 25°C unless otherwise specified) Limiting values CMBT2222 Collector–base voltage (open emitter) VCBO Collector–emitter voltage (open base) VCEO Emitter–base voltage (open collector) VEBO Collector current (d.c,) IC Total power dissipation up to Tamb = 25 °C Ptot Storage temperature range Tstg Junction temperature Tj THERMAL RESISTANCE From junction to ambient max. rnax. max. max. max. CMBT2222A 60 30 5,0 max. 75 40 6,0 V V V mA 600 250 –55 to +150 150 °C °C 500 K/W Rth j–a mW CHARACTERISTICS Tj = 25 °C unless otherwise specified Collector cut–off current IE = 0; VCB = 50 V IE = 0; VCB = 60 V IE = 0; VCB = 50 V; Ti – 125 °C IE = 0; VCB = 60 V; Tj = 125 °C VEB = 3 V; VCE = 60 V Base current with reverse biased emitter junction VFB = 3V; VCE = 60V Emitter cut–off current IC = 0; VEB = 3V Saturation voltages IC = 150 mA; lB = 15 mA IC = 500 mA; lB = 50 mA Breakdown voltages IC = 1,0mA; IB = 0 IC = 100mA; IE = 0 IC = 0; IE = 10mA Continental Device India Limited CMBT2222 CMBT2222A 0,01 – 10 – – – 0,01 – 10 10 mA mA mA mA nA ICBO ICBO ICBO ICBO ICEX < < < < <– IBEX < – 20 nA IEBO < – 10 nA VCEsat < VBEsat < VBEsat 400 1.3 – VCEsat < VBEsat < 1.6 2.6 1.0 2.0 V V V(BR)CEO > V(BR)CBO > V(BR)EBO > 30 60 5,0 40 75 6,0 V V V Data Sheet 300 mV – V 0,6 to 1,2 V Page 2 of 4 CMBT2222 CMBT2222A CMBT2222 D.C. current gain hFE IC = 0,1 mA; VCE = 10V hFE IC = 1 mA; VCE = 10V hFE lC = 10 mA; VCE = 10 V lC = 10 mA; VCE = 10 V; Tamb = –55 °C hFE hFE IC = 150mA; VCE = 10V IC = 150 mA; VCE = 1 V hFE hFE IC = 500 mA; VCE = 10 V > > > > CMBT2222A 35 50 75 35 100 to 300 50 > > 30 40 fT > 250 300 Co < Ci < F < 4,0 dB Transition frequency at f = 100 MHz IC = 20 mA; VCE = 20 V Output capacitance at f = 1 MHz IE = 0; VCB = 10V Input capacitance at f = 1 MHz IC = 0; VEB = 0,5V Noise figure at RS = 1 kW IC = 100mA; VCE = 10V; f = 1 kHz Switching times (between 10% and 90% levels) Turn–on time switched to Ic = 150 mA delay time rise time Turn–off time switched from Ic = 150 mA storage time fall time td tr < < 10 25 ns ns ts tf < < 225 60 ns ns Small Signal Current Gain VCE = 10V; IC = 1 mA; f = 1 KHz hfe > < 50 300 VCE = 10V; IC = 10mA; f = 1 KHz hfe > < 75 375 Continental Device India Limited Data Sheet 8,0 30 MHz pF 25 pF Page 3 of 4 Notes Disclaimer The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/ CD is believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product; neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own risk and CDIL will not be responsible for any damages resulting from such sale(s). CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice. CDIL is a registered Trademark of Continental Device India Limited C-120 Naraina Industrial Area, New Delhi 110 028, India. Telephone + 91-11-579 6150 Fax + 91-11-579 9569, 579 5290 e-mail [email protected] www.cdil.com Continental Device India Limited Data Sheet Page 4 of 4