DG304B/306B/307B Vishay Siliconix CMOS Analog Switches FEATURES BENEFITS D D D D D D D D D D "15-V Input Range Fast Switching—tON: 110 ns Low rDS(on): 30 W Single Supply Operation CMOS Logic Levels Micropower: 30 nW APPLICATIONS Full Rail-to-Rail Analog Signal Range D Low Level Switching Circuits Low Signal Error D Programmable Gain Amplifiers Wide Dynamic Range D Portable and Battery Powered Systems Low Power Dissipation DESCRIPTION The DG304B, DG306B and DG307B monolithic CMOS switches were designed for applications in communications, instrumentation and process control. This series is well suited for applications requiring fast switching and nearly flat on-resistance over the entire analog range. applications, without sacrificing switching speed. Break-before-make switching action is guaranteed, and an epitaxial layer prevents latchup. Single supply operation (for positive switch voltages) is allowed by connecting the V– rail to 0 V. Designed on the Vishay Siliconix PLUS-40 CMOS process to achieve low power consumption and excellent on/off switch performance, these switches are ideal for battery powered Each switch conducts equally well in both directions when on, and blocks up to the supply voltage when off. These switches are CMOS input compatible. FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION DG304B NC D1 NC S1 NC IN1 GND Plastic DIP 1 14 2 13 3 12 V+ D2 NC 4 11 S2 5 10 NC 6 9 IN2 7 8 TRUTH TABLE Logic Switch 0 OFF 1 ON Logic “0” v 3.5 V Logic “1” w 11 V V– Top View DG306B NC Plastic DIP V+ 1 14 S3 2 13 S4 D3 3 12 D4 D1 4 11 D2 10 S2 9 IN2 S1 IN1 GND Document Number: 71403 S-02968—Rev. A, 22-Jan-01 5 6 7 Top View 8 V– TRUTH TABLE Logic Switch 0 OFF 1 ON Logic “0” v 3.5 V Logic “1” w 11 V www.vishay.com 1 DG304B/306B/307B Vishay Siliconix FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION DG306B NC S3 D3 Plastic DIP V+ 1 14 2 13 S4 12 D4 3 D1 4 11 D2 S1 5 10 S2 9 IN2 IN1 GND 6 7 Top View 8 Four SPST Switches per Package TRUTH TABLE Logic SW1, SW2 SW3, SW4 0 OFF ON 1 ON OFF V– Logic “0” v 3.5 V Logic “1” w 11 V ORDERING INFORMATION Temp Range Package Part Number 14-Pin Plastic DIP DG304BDJ 14-Pin Plastic DIP DG306BDJ 14-Pin Plastic DIP DG307BDJ DG304B –40 to 85_C DG306B –40 to 85_C DG307B –40 to 85_C ABSOLUTE MAXIMUM RATINGS Voltages Referenced to V– Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65 to 150_C V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 V Power Dissipationb 14-Pin Plastic DIPc . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 470 mW GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 V Digital Inputsa, VS, VD . . . . . . . . . . . . . . . . . . . . . . . . (V–) –2 V to (V+) +2V or 30 mA, whichever occurs first Current, Any Terminal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA Continuous Current, S or D (Pulsed at 1 ms, 10% duty cycle max) . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA www.vishay.com 2 Notes: a. Signals on SX, DX, or INX exceeding V+ or V– will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 11 mW/_C above 75_C Document Number: 71403 S-02968—Rev. A, 22-Jan-01 DG304B/306B/307B Vishay Siliconix SPECIFICATIONSa Limits Test Conditions Unless Specified Parameter V+ = 15 V, V– = –15 V VIN = 3.5 V or 11 Vf Symbol –40 to 85_C Tempb Mind Typc Maxd Unit 15 V 30 50 75 W Analog Switch Analog Signal Rangee VANALOG Full –15 Drain-Source On-Resistance rDS(on) VD = "10 V, IS = 10 mA Room Full Source Off Leakage Current IS(off) VS = "14 V VD = #14 V Room Full –5 –100 "0.1 5 100 Drain Off Leakage Current ID(off) VS = "14 V VD = #14 V Room Full –5 –100 "0.1 5 100 Drain On Leakage Current ID(on) VD = VS = "14 V Room Full –5 –200 "0.1 5 200 VIN = 5 V Room Full –1 –0.001 VIN = 15 V Room Full VIN = 0 V Room Full nA Digital Control Input Current with Input Voltage High IINH Input Current with Input Voltage Low IINL 0.001 –1 1 mA –0.001 Dynamic Characteristics Turn-On Time tON Turn-Off Time tOFF Break-Before-Make Time Charge Injection Room 110 Room 70 tOPEN DG305A/307A ONLY, See Figure 3 Room 50 Q CL = 1 nF, Rgen = 0, Vgen = 0 V, See Figure 4 Room 30 Room 14 Room 14 Room 40 VIN = 0 V Room 6 VIN = 15 V Room 7 62 Source-Off Capacitance CS(off) Drain-Off Capacitance CD(off) Channel-On Capacitance CD(on) Input Capacitance See Figure 2 CIN f = 1 MHz, VS = 0 V VS, VD = 0 V f = 1 MHz Off-Isolation OIRR VIN = 0 V, RL = 1 kW Room Crosstalk (Channel-to-Channel) XTALK VS = 1 Vrms, f = 500 kHz Room 74 Room Full 0.001 ns pC pF dB Power Supplies Positive Supply Current Negative Supply Current I+ I– VIN = 15 V or 0 V (All Inputs) Room Full –100 –0.001 100 m mA Notes: a. Refer to PROCESS OPTION FLOWCHART. b. Room = 25_C, Full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. e. Guaranteed by design, not subject to production test. f. VIN = input voltage to perform proper function. Document Number: 71403 S-02968—Rev. A, 22-Jan-01 www.vishay.com 3 DG304B/306B/307B Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) rDS(on) vs. VD and " Power Supply rDS(on) vs. VD and + Power Supply Voltage r DS(on)– Drain-Source On-Resistance ( W ) r DS(on)– Drain-Source On-Resistance ( W ) 100 TA = 25_C 80 "5 V 60 "7.5 V 40 "10 V "15 V 20 "20 V TA = 25_C V– = 0 V 100 +7.5 V 80 +10 V 60 +15 V +20 V 40 20 0 0 –20 –15 –10 –5 0 5 10 15 20 0 5 VD – Drain Voltage (V) 10 15 20 VD – Drain Voltage (V) Input Switching Threshold vs. V+ and V– Supply Voltages Leakage Currents vs. Analog Voltage 10 10 TA = 25_C 9 0 ID(off) or IS(off) 8 7 6 ID(on) V T (V) I S, I D (pA) –10 –20 5 4 3 –30 2 1 –40 0 –15 –12 –9 –6 –3 0 3 6 9 12 15 "5 0 Switching Time vs. Positive Supply Voltage "20 240 V– = –15 V TA = 25_C VINH = 15 V VINL = 0 V 200 V+ = 15 V TA = 25_C VINH = 15 V VINL = 0 V 200 tON t ON , t OFF (ns) t ON , t OFF (ns) "15 Switching Time vs. Negative Supply Voltage 240 160 120 tOFF 80 160 tON 120 tOFF 80 40 40 0 5 10 V+ – Positive Supply Voltage (V) www.vishay.com 4 "10 V+, V– Positive & Negative Supplies (V) VD or VS – Drain or Source Voltage (V) 15 0 –5 –10 –15 V– – Negative Supply Voltage (V) Document Number: 71403 S-02968—Rev. A, 22-Jan-01 DG304B/306B/307B Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Supply Currents vs. Toggle Frequency 8 V+ = 15 V RL = R CL = 0 VS = Open I+, I– (mA) 6 4 2 0 1k 10 k 100 k 1M f – Frequency (Hz) SCHEMATIC DIAGRAM (TYPICAL CHANNEL) V+ S V– Level Shift/ Drive VIN V+ GND D V– FIGURE 1. TEST CIRCUITS +15 V Logic “1” = Switch On V+ VS = 3 V S Logic Input D VINH 50% VO 0V IN RL 300 W 15 V CL 33 pF VS V– GND 90% 10% 0V –15 V CL (includes fixture and stray capacitance) VO = VS tON tOFF RL RL + rDS(on) Document Number: 71403 S-02968—Rev. A, 22-Jan-01 Switch Output FIGURE 2. Switching Time www.vishay.com 5 DG304B/306B/307B Vishay Siliconix TEST CIRCUITS +15 V V+ VS1 = 3 V VS2 = 3 V Logic “1” = Switch On Logic Input S1 D1 S2 D2 VO1 VO2 IN V– GND Switch Output RL1 300 W RL2 300 W CL1 33 pF CL2 33 pF VINH 50% 0V VS1 50% VO1 0V VS2 VO2 Switch Output 50% 0V tBBM –15 V CL (includes fixture and stray capacitance) FIGURE 3. Break-Before-Make SPDT (DG307B) +15 V Rg V+ S IN Vg DVO D VO VO CL 1 nF 3V INX ON V– GND OFF ON Q = DVO x CL –15 V FIGURE 4. Charge Injection APPLICATION HINTSa GND Voltage (V) VIN Logic Input Voltage VINH(min)/VINL(max) (V) VS or VD Analog Voltage Range (V) –15 0 11/3.5 –15 to 15 –20 0 11/3.5 –20 to 20 0 0 11/3.5 0 to 15 V+ Positive Supply Voltage (V) V– Negative Supply Voltage (V) 15 20 15 Notes: a. Application Hints are for DESIGN AID ONLY, not guaranteed and not subject to production testing. www.vishay.com 6 Document Number: 71403 S-02968—Rev. A, 22-Jan-01 DG304B/306B/307B Vishay Siliconix APPLICATIONS +15 V –15 V 10 kW VIN 10 kW VOUT +15 V –15 V 10 kW 10 kW 100 kW 1 MW A1 A0 DG304B Binary Input Gain 11 10 01 00 1 10 100 1000 FIGURE 5. Low Power Binary to 10n Gain Low Frequency Amplifier +15 V –15 V –15 V VIN1 +15 V VOUT VIN2 CMOS Logic Input Select High = VIN1 –15 V +15 V CMOS Logic Gain Select High = 10x 1x 10x DG307B GND 20 kW 180 kW FIGURE 6. Low Power Non-Inverting Amplifier with Digitally Selectable Inputs and Gain Document Number: 71403 S-02968—Rev. A, 22-Jan-01 www.vishay.com 7