VISHAY DG300B

DG300B/301B/302B/303B
Vishay Siliconix
CMOS Analog Switches
FEATURES
BENEFITS
APPLICATIONS
D
D
D
D
D
D
D Full Rail-to-Rail Analog Signal Range
D Low Signal Error
D Low Power Dissipation
D Low Level Switching Circuits
D Programmable Gain Amplifiers
D Portable and Battery Powered Systems
Analog Signal Range: "15 V
Fast Switching—tON: 150 ns
Low On-Resistance—rDS(on): 30 Single Supply Operation
Latch-up Proof
CMOS Compatible
DESCRIPTION
The DG300B-DG303B family of monolithic CMOS switches
feature three switch configuration options (SPST, SPDT, and
DPST) for precision applications in communications,
instrumentation and process control, where low leakage
switching combined with low power consumption are required.
Designed on the Vishay Siliconix PLUS-40 CMOS process,
these switches are latch-up proof, and are designed to block
up to 30 V peak-to-peak when off. An epitaxial layer prevents
latchup.
In the on condition the switches conduct equally well in both
directions (with no offset voltage) and minimize error
conditions with their low on-resistance.
Featuring low power consumption (3.5 mW typ) these
switches are ideal for battery powered applications, without
sacrificing switching speed. Designed for break-before-make
switching action, these devices are CMOS and quasi TTL
compatible. Single supply operation is allowed by connecting
the V– rail to 0 V.
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG300B
Plastic DIP
TRUTH TABLE
NC
1
14
V+
D1
2
13
D2
NC
3
12
NC
S1
4
11
S2
NC
5
10
NC
IN1
6
9
IN2
GND
7
8
V–
Logic
Switch
0
OFF
1
ON
Logic “0” v 0.8 V
Logic “1” w 4 V
Top View
Document Number: 71402
S-02968—Rev. A, 22-Jan-01
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1
DG300B/301B/302B/303B
Vishay Siliconix
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG301B
Plastic DIP
NC
1
14
V+
D1
2
13
D2
NC
3
12 NC
S1
4
11
S2
NC
5
10
NC
IN
6
9
NC
GND
7
8
V–
TRUTH TABLE
Logic
SW1
SW2
0
OFF
ON
1
ON
OFF
Logic “0” v 0.8 V
Logic “1” w 4 V
Top View
DG302B
Plastic DIP
NC
1
14
V+
S3
2
13
S4
D3
3
12
D4
D1
4
11
D2
S1
5
10
S2
IN1
6
9
IN2
GND
7
8
V–
TRUTH TABLE
Logic
Switch
0
OFF
1
ON
Logic “0” v 0.8 V
Logic “1” w 4 V
Top View
DG303B
Plastic DIP and SOIC
NC
1
14
V+
S3
2
13
S4
D3
3
12
D4
D1
4
11
D2
S1
5
10
S2
IN1
6
9
IN2
GND
7
8
V–
TRUTH TABLE
Logic
SW1, SW2 SW3, SW4
0
OFF
ON
1
ON
OFF
Logic “0” v 0.8 V
Logic “1” w 4 V
Top View
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Document Number: 71402
S-02968—Rev. A, 22-Jan-01
DG300B/301B/302B/303B
Vishay Siliconix
ORDERING INFORMATION
Temp Range
Package
Part Number
14-Pin Plastic DIP
DG300BDJ
14-Pin Plastic DIP
DG301BDJ
14-Pin Plastic DIP
DG302BDJ
14-Pin Plastic DIP
DG303BDJ
14-SOIC
DG303BDY
DG300B
–40 to 85_C
DG301B
–40 to 85_C
DG302B
–40 to 85_C
DG303B
–40 to 85_C
_
ABSOLUTE MAXIMUM RATINGS
Voltages Referenced to V–
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65 to 150_C
V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 V
Power DissipationNO TAG
14-Pin Plastic DIPNO TAG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 470 mW
GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 V
SOIC-14d . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600 mW
Notes:
a. Signals on SX, DX, or INX exceeding V+ or V– will be clamped by internal
diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 6.5 mW/_C above 25_C
d. Derate 7.6 mW/_C above 75_C
Digital InputsNO TAG, VS, VD . . . . . . . . . . . . . . . . . . . (V–) –2 V to (V+) +2V or
30 mA, whichever occurs first
Current, Any Terminal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA
Continuous Current, S or D
(Pulsed at 1 ms, 10% duty cycle max) . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA
SCHEMATIC DIAGRAM (TYPICAL CHANNEL)
V+
S
V–
VIN
Level
Shift/
Drive
V+
GND
D
V–
FIGURE 1.
Document Number: 71402
S-02968—Rev. A, 22-Jan-01
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DG300B/301B/302B/303B
Vishay Siliconix
SPECIFICATIONSa
Limits
Test Conditions Unless Specified
Parameter
Symbol
V+ = 15 V, V– = –15 V
VIN = 0.8 V or VIN = 4 Vf
–40 to 85_C
Tempb Mind
Typc
Maxd
Unit
15
V
50
75
Analog Switch
Analog Signal Rangee
VANALOG
Full
Drain-Source On-Resistance
rDS(on)
Room
Full
Source Off Leakage Current
IS(off)
VD = "10 V, IS = –10 mA
Drain On Leakage Current
30
Room
Hot
–5
–100
"0.1
5
100
ID(off)
Room
Hot
–5
–100
"0.1
5
100
ID(on)
VD = VS = "14 V
Room
Hot
–5
–100
"0.1
5
100
VIN = 5 V
Room
Full
–1
–0.001
VIN = 15 V
Room
Full
VIN = 0 V
Room
Full
VS = "14
" V, VD = #14
# V
Drain Off Leakage Current
–15
nA
Digital Control
Input Current with
Input Voltage High
IINH
Input Current with
Input Voltage Low
IINL
0.001
–1
1
A
–0.001
Dynamic Characteristics
Turn-On Time
tON
Turn-Off Time
tOFF
Break-Before-Make Time
Charge Injection
Room
150
Room
130
tOPEN
DG301B/303B Only
Figure NO TAG
Room
50
Q
CL = 1 nF, Rgen = 0 Vgen = 0 V, Figure NO TAG
Room
8
Room
14
Room
14
Room
40
VIN = 0 V
Room
6
VIN = 15 V
Room
7
Room
62
Room
74
Room
Full
0.23
Source-Off Capacitance
CS(off)
Drain-Off Capacitance
CD(off)
Channel-On Capacitance
CD(on)
Input Capacitance
Cin
Off-Isolation
OIRR
Crosstalk (Channel-to-Channel)
XTALK
See Figure NO TAG
VS, VD = 0 V, f = 1 MHz
f = 1 MHz
VIN = 0 V, RL = 1 k
VS = 1 Vrms, f = 500 kHz
ns
pC
pF
dB
Power Supplies
Positive Supply Current
I+
Negative Supply Current
I–
Positive Supply Current
I+
VIN = 4 V (One Input)
All Others = 0 V
I–
–100
Room
Full
VIN = 0.8 V (All Inputs)
Negative Supply Current
Room
Full
Room
Full
mA
–0.001
0.001
–100
1
100
A
–0.001
Notes:
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25_C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f.
VIN = input voltage to perform proper function.
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Document Number: 71402
S-02968—Rev. A, 22-Jan-01
DG300B/301B/302B/303B
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
rDS(on) vs. VD and Power Supply
rDS(on) vs. VD and Temperature
60
70
)
"5 V
"8 V
50
"10 V
"12 V
30
"15 V
"20 V
10
r DS(on)– Drain-Source On-Resistance (
r DS(on)– Drain-Source On-Resistance ( )
TA = 25_C
–25
–15
–5
5
15
V+ = 15 V
V– = –15 V
50
40
TA = 125_C
30
TA = 25_C
20
TA = –55_C
10
25
–15
–10
–5
0
5
10
15
VD – Drain Voltage (V)
VD – Drain Voltage (V)
rDS(on) vs. VD and Power Supply Voltage
Switching Time and Break-Before-Make Time
vs. Positive Supply Voltage
500
V– = 0 V
TA = 25_C
100
7.5 V
V– = –15 V
TA = 25_C
VINH = 4 V
VINL = 0 V
400
80
t ON, t OFF (ns)
r DS(on)– Drain-Source On-Resistance ( )
90
10 V
60
300
tOFF
200
tON
15 V
40
20 V
tOPEN
100
DG301B/303B Only
20
0
0
5
10
15
20
0
10
15
V+ – Positive Supply (V)
Charge Injection vs. Analog Voltage
Input Switching Threshold
vs. Positive Supply Voltage
5
50
40
5
VD – Drain Voltage (V)
V– = –15 V
TA = 25_C
V+ = 15 V
V– = –15 V
CL = 1 nF
4
30
Q (pC)
V T (V)
3
20
2
10
1
0
–15
–10
–5
0
5
VS – Source Voltage (V)
Document Number: 71402
S-02968—Rev. A, 22-Jan-01
10
15
0
5
10
15
V+ – Positive Supply (V)
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DG300B/301B/302B/303B
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Supply Current vs. Temperature
Off Isolation and Crosstalk vs. Frequency
–120
500
400
–100
Crosstalk
I+
–80
(dB)
I+, I– ( A)
300
V+ = 15 V
V– = –15 V
200
VIN = 4 V
100
(One Input)
(All Other = 0 V)
Off Isolation
–60
I–
–40
0
–100
–55
–35
–15
5
25
45
65
85
105
V+ = +15 V
V– = –15 V
RL= 50 –20
10 k
125
100 k
Temperature (_C)
1M
10 M
f – Frequency (Hz)
Supply Curents vs. Switching Frequency
Leakage vs. Temperature
100 nA
15
V+ = 15 V
V– = –15 V
10 nA
V+ = 15 V
V– = –15 V
VS, VD = "14 V
I S, I D
I+, I– (mA)
10
ID(on)
1 nA
5
100 pA
+I
ID(off) or IS(off)
–I
10 pA
–55 –35
0
1k
10 k
100 k
1M
–15
f – Frequency (Hz)
350
350
300
300
250
250
tON
tOFF
50
50
"14
"16
"18
Supply Voltage (V)
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85
105
125
"20
105
125
V+ = 15 V
V– = –15 V
VS = 3 V
tON
tOFF
150
100
"12
65
200
100
0
"10
45
Switching Time vs. Temperature
400
Time (ns)
Time (ns)
Switching Time vs. Power Supply Voltage
150
25
Temperature (_C)
400
200
5
"22
0
–55
–35
–15
5
25
45
65
85
Temperature (_C)
Document Number: 71402
S-02968—Rev. A, 22-Jan-01
DG300B/301B/302B/303B
Vishay Siliconix
TEST CIRCUITS
+15 V
Logic “1” = Switch On
V+
VS = 3 V
Logic
Input
D
S
VO
50%
0V
IN
5V
RL
300 V–
GND
VS
CL
33 pF
Switch
Output
90%
10%
0V
–15 V
tON
CL (includes fixture and stray capacitance)
VO = VS
tOFF
RL
RL + rDS(on)
FIGURE 2. Switching Time
+15 V
V+
VS1 = 3 V
VS2 = 3 V
S1
D1
S2
D2
VO2
V–
Switch
Output
RL1
300 RL2
300 CL1
33 pF
CL2
33 pF
VINH
50%
0V
VO1
IN
GND
Logic “1” = Switch On
Logic
Input
VS1
50%
VO1
0V
VS2
Switch
Output 0 V
VO2
50%
tBBM
–15 V
CL (includes fixture and stray capacitance)
FIGURE 3. Break-Before-Make SPDT (DG301B, DG303B)
+15 V
Rg
V+
S
IN
Vg
VO
CL
1 nF
3V
GND
VO
D
VO
INX
ON
V–
OFF
ON
–15 V
FIGURE 4. Charge Injection
Document Number: 71402
S-02968—Rev. A, 22-Jan-01
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DG300B/301B/302B/303B
Vishay Siliconix
APPLICATION HINTSNO TAG
GND
Voltage
(V)
VIN
Logic Input
Voltage
VINH(min)/VINL(max)
(V)
VS or VD
Analog Voltage
Range
(V)
–15
0
4/0.8
–15 to 15
–20
0
4/0.8
–20 to 20
0
0
4/0.8
0 to 15
V+
Positive Supply
Voltage
(V)
V–
Negative Supply
Voltage
(V)
15
20
15
Note:
a. Application Hints are for DESIGN AID ONLY, not guaranteed and not subject to production testing.
APPLICATIONS
The DG300B series of analog switches will switch positive
analog signals while using a single positive supply. This
facilitates their use in applications where only one supply is
available. The trade-offs of using single supplies are:
1) Increased rDS(on); 2) slower switching speed. The analog
voltage should not go above or below the supply voltages
which in single operation are V+ and 0 V. (See Input Switching
Threshold vs. Positive Supply Voltage Curve.)
+15 V
50 k
10 k
+15 V
5 k
VOUT
10 F
+15 V
DG301B
100 k
+5 V
5 k
TTL Input
10 k
FIGURE 5. Single Supply Op Amp Switching
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Document Number: 71402
S-02968—Rev. A, 22-Jan-01
DG300B/301B/302B/303B
Vishay Siliconix
+15 V
CMOS Logic
Input Select
High = Diff. IN B
–15 V
+15 V
Diff. IN A
–15 V
+
–
R4
75 k
+15 V
R2
R6
75 k
75 k
Diff. IN B
R1
16 k
DG302B
Ri1
1.5 k
VOUT
DG301B
GND
R2
75 k
CMOS Logic
Gain Select
High = AV = 101
+15 V
VOSNULL
R5
R7
75 k
67 k
50 k
Voltage gain of the instrumentation amplifier is:
AV = 1 +
2R2
R1
(In the circuit shown, AV1 = 10.4, AV2 = 101)
–15 V
FIGURE 6. Low Power Instrumentation Amplifier with Digitally Selectable Inputs and Gain
Document Number: 71402
S-02968—Rev. A, 22-Jan-01
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