ETC IRGC15B120KB

PD - 93866A
IRGC15B120KB
Die in Wafer Form
Features
•
•
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C
GEN5 Non Punch Through (NPT) Technology
Low VCE(on)
10µ s Short Circuit Capability
Square RBSOA
Positive VCE(on) Temperature Coefficient
G
Benefits
• Benchmark Efficiency for Motor Control Applications
• Rugged Transient Performance
• Excellent Current Sharing in Parallel Operation
E
1200V
IC(nom)=15A
VCE(on) typ.=2.46V @
IC(nom) @ 25°C
Motor Control IGBT
Short Circuit Rated
150mm Wafer
Electrical Characteristics (Wafer Form)
Parameter
VCE (on)
V(BR)CES
VGE(th)
ICES
IGES
Description
Guaranteed (min, max)
Collector-to-Emitter Saturation Voltage
1.85V min, 2.3V max
Colletor-to-Emitter Breakdown Voltage
1200V min
Gate Threshold Voltage
4.4V min, 6.0V max
Zero Gate Voltage Collector Current
7µA max
Gate-to-Emitter Leakage Current
± 1.1µA max
Test Conditions
IC = 10A, TJ = 25°C, VGE = 15V
TJ = 25°C, ICES = 125µA, VGE = 0V
VGE = VCE , TJ =25°C, IC = 125µA
TJ = 25°C, VCE = 1200V
TJ = 25°C, VGE = +/-20V
Mechanical Data
Nominal Backmetal Composition, (Thickness)
Nominal Front Metal Composition, (Thickness)
Dimensions
Wafer Diameter
Wafer Thickness, Tolerance
Relevant Die Mechanical Dwg. Number
Minimum Street Width
Reject Ink Dot Size
Ink Dot Location
Recommended Storage Environment
Al - Ti - Ni/V - Ag, (1kA - 1kA - 4kA - 6kA)
99% Al/1% Si, (4µm)
0.170" x 0.243"
150mm, with std. < 100 > flat
185µm, +/-15µm
01-5380
100µm
0.25mm diameter minimum
Consistent throughout same wafer lot
Store in original container, in dessicated
nitrogen, with no contamination
For optimum electrical results, die attach
temperature should not exceed 300°C
Recommended Die Attach Conditions
Die Outline
www.irf.com
03/20/02