MICROCIRCUIT DATA SHEET Original Creation Date: 06/26/95 Last Update Date: 02/11/99 Last Major Revision Date: 07/21/98 MNLM108A-X REV 1A1 OPERATIONAL AMPLIFIERS General Description The LM108A is a precision operational amplifier having specifications a factor of ten better than FET amplifiers over a -55 C to +125 C temperature range. The device operates with supply voltages from +2V to +20V and has sufficient supply rejection to use unregulated supplies. Although the circuit is interchangeable with, and uses the same compensation as, the LM101A, an alternate compensation scheme can be used to make it particularly insensitive to power supply noise, and to make supply bypass capacitors unnecessary. The low current error of the LM108A makes possible many designs that are not practical with conventional amplifiers. In fact, it operates from 10 Mohms source resistances, introducing less error than devices such as the 709 with 10 Kohms sources. Integrators with drifts less than 500 uV/sec, and analog time delays in excess of one hour, can be made using capacitors no larger than 1uF. Industry Part Number NS Part Numbers LM108A LM108AH/883 LM108AJ-8/883 LM108AJ/883 LM108AW/883 LM108AWG/883 Prime Die LM108 Processing Subgrp Description MIL-STD-883, Method 5004 1 2 3 4 5 6 7 8A 8B 9 10 11 Quality Conformance Inspection MIL-STD-883, Method 5005 1 Static tests at Static tests at Static tests at Dynamic tests at Dynamic tests at Dynamic tests at Functional tests at Functional tests at Functional tests at Switching tests at Switching tests at Switching tests at Temp ( oC) +25 +125 -55 +25 +125 -55 +25 +125 -55 +25 +125 -55 MICROCIRCUIT DATA SHEET MNLM108A-X REV 1A1 Features - Maximum input bias current of 3.0 nA over temperature. Offset current less than 400 pA over temperature. Supply current of only 300 uA, even in saturation. Guraranteed drift characteristics. 2 MICROCIRCUIT DATA SHEET MNLM108A-X REV 1A1 (Absolute Maximum Ratings) (Note 1) Supply Voltage +20V Input Voltage (Note 4) +15V Power Dissipation (Note 2) 500mW Maximum Junction Temperature 150 C Differential Input Current (Note 3) +10mA Output Short-Circuit Duration Continuous Operating Temperature Range -55 C to +125 C Storage Temperature Range -65 C to +150 C Thermal Resistance ThetaJA METAL CAN CERDIP, 14 Lead CERDIP, 8 Lead CERPACK, 10 Lead CERAMIC SOIC (Still Air) (500LF/Min Air (Still Air) (500LF/Min Air (Still Air) (500LF/Min Air (Still Air) (500LF/Min Air (Still Air) (500LF/Min Air flow) flow) flow) flow) flow) ThetaJC METAL CAN CERDIP, 14 Lead CERDIP, 8 Lead CERPACK, 10 Lead CERAMIC SOIC Package Weight (Typical) METAL CAN CERDIP, 14 Lead CERDIP, 8 Lead CERPACK, 10 Lead CERAMIC SOIC Lead Temperature (Soldering, 10 seconds) H-Pkg (Soldering, 10 seconds) ESD Tolerance (Note 5) 159 86 94 55 123 68 225 142 225 142 C/W C/W C/W C/W C/W C/W C/W C/W C/W C/W 38 13 17 21 21 C/W C/W C/W C/W C/W 990mg 2180mg 1090mg 225mg 210mg 260 C 300 C 2000V 3 MICROCIRCUIT DATA SHEET MNLM108A-X REV 1A1 Note 1: Note 2: Note 3: Note 4: Note 5: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is functional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics. The guaranteed specifications apply only for the test conditions listed. Some performance characteristics may degrade when the device is not operated under the listed test conditions. The maximum power dissipation must be derated at elevated temperatures and is dictated by Tjmax (maximum junction temperature), ThetaJA (package junction to ambient thermal resistance), and TA (ambient temperature). The maximum allowable power dissipation at any temperature is Pdmax = (Tjmax - TA)/ThetaJA or the number given in the Absolute Maximum Ratings, whichever is lower. The inputs are shunted with back-to-back diodes for overvoltage protection. Therefore, excessive current will flow if a differential input voltage in excess of 1V is applied between the inputs unless some limiting resistance is used. For supply voltages less than +15V, the absolute maximum input voltage is equal to the supply voltage. Human body model, 1.5K Ohms in series with 100pF. 4 MICROCIRCUIT DATA SHEET MNLM108A-X REV 1A1 Electrical Characteristics DC PARAMETERS (The following conditions apply to all the following parameters, unless otherwise specified.) DC: Vcc = +20V, Vcm = 0V SYMBOL Vio PARAMETER Input Offset Voltage CONDITIONS NOTES Vcm = -15V Input Offset Current Input Bias Current MAX UNIT SUBGROUPS 0.5 mV 1 -1.0 1.0 mV 2, 3 -0.5 0.5 mV 1 -1.0 1.0 mV 2, 3 -0.5 0.5 mV 1 -1.0 1.0 mV 2, 3 Vcc = +5V -0.5 0.5 mV 1 Vcc = +5V -1.0 1.0 mV 2, 3 Vcm = -15V -0.2 0.2 nA 1 -0.4 0.4 nA 2, 3 -0.2 0.2 nA 1 -0.4 0.4 nA 2, 3 -0.2 0.2 nA 1 -0.4 0.4 nA 2, 3 Vcc = +5V -0.2 0.2 nA 1 Vcc = +5V -0.4 0.4 nA 2, 3 Vcm = -15V -0.1 2 nA 1 -1.0 3.0 nA 2 -0.1 3.0 nA 3 -0.1 2 nA 1 -1.0 3.0 nA 2 -0.1 3.0 nA 3 -0.1 2 nA 1 -1.0 3.0 nA 2 -0.1 3.0 nA 3 Vcc = +5V -0.1 2 nA 1 Vcc = +5V -1.0 3.0 nA 2 Vcc = +5V -0.1 3.0 nA 3 Vcm = 15V Iib+ MIN -0.5 Vcm = 15V Iio PINNAME Vcm = 15V 5 MICROCIRCUIT DATA SHEET MNLM108A-X REV 1A1 Electrical Characteristics DC PARAMETERS(Continued) (The following conditions apply to all the following parameters, unless otherwise specified.) DC: Vcc = +20V, Vcm = 0V SYMBOL Iib- PARAMETER Input Bias Current CONDITIONS NOTES Vcm = -15V PINNAME MIN MAX UNIT SUBGROUPS -0.1 2 nA 1 -1.0 3.0 nA 2 -0.1 3.0 nA 3 -0.1 2 nA 1 -1.0 3.0 nA 2 -0.1 3.0 nA 3 -0.1 2 nA 1 -1.0 3.0 nA 2 -0.1 3.0 nA 3 Vcc = +5V -0.1 2 nA 1 Vcc = +5V -1.0 3.0 nA 2 Vcc = +5V -0.1 3.0 nA 3 Vcm = 15V PSRR Power Supply Rejection Ratio +20V <= Vcc <= +5V 96 dB 1, 2, 3 CMRR Common Mode Rejection Ratio -15V <= VCM <= 15V 96 dB 1, 2, 3 Ios+ Short Circuit Vcc = +15V -30 -1.0 mA 1, 2, 3 Ios- Short Circuit Vcc = +15V 1 30 mA 1, 2, 3 Icc Power Supply Current 0.6 mA 1 0.4 mA 2 0.8 mA 3 Rin Input Resistance Vin Input Voltage Range 2 30 M 1 Vcc = +15V 1 +14 V 1, 2 Vcc = +15V 1 +13.5 V 3 1 +15 V 1, 2, 3 Delta Vio/Delta T Temperature Coeffient of Input Offset Voltage 2 5 uV/C 1, 2, 3 Delta Iio/Delta T Temperature Coeffient of Input Offset Current 2 2.5 pA/C 1, 2, 3 6 MICROCIRCUIT DATA SHEET MNLM108A-X REV 1A1 Electrical Characteristics DC PARAMETERS(Continued) (The following conditions apply to all the following parameters, unless otherwise specified.) DC: Vcc = +20V, Vcm = 0V SYMBOL PARAMETER CONDITIONS NOTES PINNAME MIN MAX SUBGROUPS Vop+ Output Voltage Swing Vcc=+15V, Rl=10K Ohms Vop- Output Voltage Swing Vcc=+15V, Rl=10K Ohms Avs+ Open Loop Voltage Gain Vcc=+15V, Rl=10K Ohms, Vout= 0 to 10V 3 80 V/mV 4 Vcc=+15V, Rl=10K Ohms, Vout= 0 to 10V 3 40 V/mV 5, 6 Vcc=+15V, Rl=10K Ohms, Vout= 0 to -10V 3 80 V/mV 4 Vcc=+15V, Rl=10K Ohms, Vout= 0 to -10V 3 40 V/mV 5, 6 2 1 uS Avs- TR Open Loop Voltage Gain 13 UNIT -13 Transient Response Rise Time V 4, 5, 6 V 4, 5, 6 7 DC PARAMETERS: DRIFT VALUES (The following conditions apply to all the following parameters, unless otherwise specified.) DC: Vcc = +20V, Vcm = 0V. "Deltas not required on B-Level product. Deltas required for S-Level product ONLY as specified on Internal Processing Instructions (IPI)." Vio Input Offset Voltage Vcm = 15V -0.25 0.25 mV 1 Iib+ Input Bias Current Vcm = 15V -1 1 nA 1 Iib- Input Bias Current Vcm = 15V -1 1 nA 1 Note 1: Note 2: Note 3: Parameter tested go-no-go only. Guaranteed parameter not tested. Datalog in K = V/mV. 7 MICROCIRCUIT DATA SHEET MNLM108A-X REV 1A1 Graphics and Diagrams GRAPHICS# DESCRIPTION 06135HRA2 CERPACK (W), 10 LEAD (B/I CKT) 09556HR02 CERDIP (J), 14 LEAD (B/I CKT) 09557HRA4 METAL CAN (H), TO-99, 8LD, .200 DIA P.C. (B/I CKT) H08CRF METAL CAN (H), TO-99, 8LD, .200 DIA P.C. (P/P DWG) J08ARL CERDIP (J), 8 LEAD (P/P DWG) J14ARH CERDIP (J), 14 LEAD (P/P DWG) P000253A CERAMIC SOIC (WG), 10 LEAD (PINOUT) P000310A METAL CAN (H), TO-99, 8LD, .200 DIA P.C. (PINOUT) P000311A CERDIP (J), 14 LEAD (PINOUT) P000312A CERDIP (J), 8 LEAD (PINOUT) P000431A CERPACK (W), 10 LEAD (PINOUT) W10ARG CERPACK (W), 10 LEAD (P/P DWG) WG10ARC CERAMIC SOIC (WG), 10 LEAD (P/P DWG) See attached graphics following this page. 8 N/C 1 10 COMP 1 N/C 2 9 COMP 2 IN- 3 8 V+ IN+ 4 7 OUTPUT N/C 5 6 V- LM108AWG 10 - LEAD CERAMIC SOIC CONNECTION DIAGRAM TOP VIEW P000253A N MIL/AEROSPACE OPERATIONS 2900 SEMICONDUCTOR DRIVE SANTA CLARA, CA 95050 N N N N/C 1 10 COMP 1 N/C 2 9 COMP 2 IN- 3 8 V+ IN+ 4 7 OUTPUT N/C 5 6 V- LM108AW 10 - LEAD CERPACK CONNECTION DIAGRAM TOP VIEW P000431A N MIL/AEROSPACE OPERATIONS 2900 SEMICONDUCTOR DRIVE SANTA CLARA, CA 95050 MICROCIRCUIT DATA SHEET MNLM108A-X REV 1A1 Revision History Rev ECN # Originator Changes 0CL M0001741 02/11/99 Rel Date Barbara Lopez Changed: MNLM108A-X Rev. 0BL to MNLM108A-X Rev. 0CL. On IIB+ subgroup 3 was (-1.0min, 3.0max), corrected to read (-0.1min, 3.0max). 1A1 M0003235 02/11/99 Rose Malone Updated MDS: MNLM108A-X, Rev. 0CL to MNLM108A-X, Rev. 1A1, Full Release. Added Pinout and B/I Ckt graphics and Thermal Data. 9