MICROCIRCUIT DATA SHEET Original Creation Date: 01/14/99 Last Update Date: 04/08/02 Last Major Revision Date: 05/18/01 MNLM158A-X-RH REV 1B1 LOW POWER, DUAL OPERATIONAL AMPLIFIER: ALSO AVAILABLE GUARANTEED TO 50K RAD (Si) TESTED TO MIL-STD-883, METHOD 1019.5 General Description The LM158A consists of two independent, high gain, internally frequency compensated operational amplifiers which were designed specifically to operate from a single power supply over a wide range of voltages. Operation from split power supplies is also possible and the low power supply current drain is independent of magnitude of the power supply voltage. Application areas include transducer amplifiers, dc gain blocks and all the conventional op amp circuits which now can be more easily implemented in single power supply systems. For example, the LM158A can be directly operated off of the standard +5V DC power supply voltage which is used in digital systems and will easily provide the required interface electronics without requiring the additional + 15V DC power supplies. Industry Part Number NS Part Numbers LM158 LM158AH-QMLV LM158AH/883 LM158AHLQMLV LM158AJ-QMLV LM158AJ/883 LM158AJLQMLV LM158AWG-QMLV LM158AWG/883 LM158AWGLQMLV Prime Die LM158 Controlling Document SEE FEATURES SECTION Processing Subgrp Description MIL-STD-883, Method 5004 1 2 3 4 5 6 7 8A 8B 9 10 11 Quality Conformance Inspection MIL-STD-883, Method 5005 1 Static tests at Static tests at Static tests at Dynamic tests at Dynamic tests at Dynamic tests at Functional tests at Functional tests at Functional tests at Switching tests at Switching tests at Switching tests at Temp ( oC) +25 +125 -55 +25 +125 -55 +25 +125 -55 +25 +125 -55 MICROCIRCUIT DATA SHEET MNLM158A-X-RH REV 1B1 Features - Internally frequency compensated for unity gain Large dc voltage gain 100dB Wide bandwidth (unity gain temperature compensated) 1MHz Wide power supply range: - Single supply 3V to 32V or dual supplies +1.5V to +16V Very low supply current drain (500uA) - essentiely independent of supply voltage Low input offset voltage 2mV Input common-mode voltage range includes ground Differential input voltage range equal to the power supply voltage Large output voltage swing 0V to V+ - 1.5V CONTROLLING DOCUMENTS: LM158AH-QMLV 5962-8771002VGA LM158AH/883 5962-8771002GA LM158AHLQMLV 5962L8771002VGA LM158AJ-QMLV 5962-8771002VPA LM158AJ/883 5962-8771002PA LM158AJLQMLV 5962L8771002VPA LM158AWG-QMLV 5962-8771002VXA LM158AWG/883 5962-8771002QXA LM158AWGLQMLV 5962L8771002VXA 2 MICROCIRCUIT DATA SHEET MNLM158A-X-RH REV 1B1 (Absolute Maximum Ratings) (Note 1) Supply Voltage, V+ 32Vdc Differential Input Voltage 32Vdc Input Voltage -0.3Vdc to +32Vdc Power Dissipation (Note 2) 830 mW Output Short-Circuit to GND (Note 3) (One Amplifier) V+ < 15Vdc and TA = 25 C Maximum Junction Temperature Continuous 150 C Input Current (Vin < -0.3Vdc) (Note 4) 50mA Operating Temperature Range -55 C < Ta < +125 C Storage Temperature Range -65 C < Ta < +150 C Lead Temperature (Soldering, 10 seconds) METAL CAN CERDIP CERAMIC SOIC Thermal Resistance ThetaJA METAL CAN (Still Air) (500LF/Min Air Flow) CERDIP (Still Air) (500LF/Min Air Flow) CERAMIC SOIC (Still Air) (500LF/Min Air Flow) 300 C 260 C 260 C 155 80 132 81 195 131 ThetaJC METAL CAN CERDIP CERAMIC SOIC Package Weight (Typcial) METAL CAN CERDIP CERAMIC SOIC ESD Tolerance (Note 5) C/W C/W C/W C/W C/W C/W 42 C/W 23 C/W 33 C/W 1000mg 1100mg 220mg 250V 3 MICROCIRCUIT DATA SHEET MNLM158A-X-RH REV 1B1 Note 1: Note 2: Note 3: Note 4: Note 5: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is functional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics. The guaranteed specifications apply only for the test conditions listed. Some performance characteristics may degrade when the device is not operated under the listed test conditions. The maximum power dissipation must be derated at elevated temperatures and is dictated by Tjmax (maximum junction temperature), ThetaJA (package junction to ambient thermal resistance), and TA (ambient temperature). The maximum allowable power dissipation at any temperature is Pdmax = (Tjmax - TA)/ThetaJA or the number given in the Absolute Maximum Ratings, whichever is lower. Short circuits from the output to V+, can cause excessive heating and eventual destruction. When considering short circuits to ground, the maximum output current is approximately 40 mA independent of the magnitude of V+. At values of supply voltage in excess of +15Vdc, continuous short-circuits can exceed the power dissipation ratings and cause eventual destruction. Destructive dissipation can result from simultaneous shorts on all amplifiers. This input current will only exist when the voltage at any of the input leads is driven negative. It is due to the collector-base junction of the input PNP transistors becoming forward baised and thereby acting as input diode clamps. In addition to this diode action, there is also lateral NPN parasitic transistor action on the IC chip. This transistor action can cause the output voltages of the op amps to go to the V+ voltage level (or to ground for a large overdrive) for the time duration that an input is driven negative. This is not destructive and normal output states will re-establish when the input voltage, which was negative, again returns to a value greater that -0.3Vdc (at 25C). Human body model, 1.5 K ohms in series with 100 pF. 4 MICROCIRCUIT DATA SHEET MNLM158A-X-RH REV 1B1 Electrical Characteristics DC PARAMETERS (The following conditions apply to all the following parameters, unless otherwise specified.) DC: All voltages referenced to device ground. SYMBOL Icc Voh Vol PARAMETER Power Supply Current Output Voltage High Output Voltage Low CONDITIONS NOTES PINNAME MIN Isource Output Source Current SUBGROUPS 1.2 mA 1, 2, 3 V+ = 30V, Rl = 100K, Vo = 1.4V 3 mA 1 4 mA 2, 3 V+ = 30V, Rl = 2K Ohms 26 V 1, 2, 3 V+ = 30V, Rl = 10K Ohms 27 V 1, 2, 3 40 mV 1 100 mV 2, 3 40 mV 1 100 mV 2, 3 40 mV 1 100 mV 2, 3 V+ = 30V, Rl = 10K Ohms V+ = 5V, Rl = 10K Ohms Output Sink Current UNIT V+ = 5V, Rl = 100K, Vo = 1.4V V+ = 30V, Isink = 1uA Isink MAX V+ = 15V, Vout = 200mV, +Vin = 0V, -Vin = +65mV 12 uA 1 V+ = 15V, Vout = 2V, +Vin = 0V, -Vin = +65mV 10 mA 1 5 mA 2, 3 -20 mA 1 -10 mA 2, 3 mA 1 V+ = 15V, Vout = 2V, +Vin = 0V, -Vin = -65mV Ios Short Circuit Current V+ = 5V, Vout = 0V -60 Vio Input Offset Voltage V+ = 30V, Vcm = 0V, Rs = 50 Ohms, Vo = 1.4V -2 2 mV 1 -4 4 mV 2, 3 V+ = 30V, Vcm = 28V, Rs = 50 Ohms, Vo = 1.4V -4 4 mV 2, 3 V+ = 5V, Vcm = 0V, Rs = 50 Ohms, Vo = 1.4V -2 2 mV 1 -4 4 mV 2, 3 V+ = 30V, Vcm = 28.5V, Rs = 50 Ohms,Vo = 1.4V -2 2 mV 1 dB 1 CMRR Common Mode Rejection Ratio V+ = 30V, Vin = 0V to 28.5V, Rs = 50 Ohms 70 Iib+ Input BIas Current V+ = 5V, Vcm = 0V -50 -1 nA 1 -100 -1 nA 2, 3 5 MICROCIRCUIT DATA SHEET MNLM158A-X-RH REV 1B1 Electrical Characteristics DC PARAMETERS(Continued) (The following conditions apply to all the following parameters, unless otherwise specified.) DC: All voltages referenced to device ground. SYMBOL Iib- Iio PARAMETER Input BIas Current Input Offset Current CONDITIONS NOTES V+ = 5V, Vcm = 0V V+ = 5V, Vcm = 0V PSRR Power Supply Rejection Ratio V+ = 5V to 30V, Vcm = 0V Vcm Common Mode Voltage Range V+ = 30V Vdiff Differential Input Voltage Avs Large Signal Gain PINNAME MIN MAX UNIT SUBGROUPS -50 -1 nA 1 -100 -1 nA 2, 3 -10 10 nA 1 -30 30 nA 2, 3 dB 1 65 1 28.5 V 1 1 28.0 V 2, 3 2 32 V 1, 2, 3 V+ = 15V, Rl = 2K Ohms, Vo = 1V to 11V 50 V/mV 4 25 V/mV 5, 6 DC PARAMETERS: DRIFT VALUES (The following conditions apply to all the following parameters, unless otherwise specified.) DC: All voltages referenced to device ground. "Delta calculations performed on Jan "S" and "QMLV" devices at Group B, Subgroup 5 only." Vio Input Offset Voltage V+ = 30V, Vcm = 0V, Rs = 50 Ohms, Vo = 1.4V -0.5 0.5 mV 1 V+ = 30V, Vcm = 28V, Rs = 50 Ohms, Vo = 1.4V -0.5 0.5 mV 1 V+ = 5V, Vcm = 0V, Rs = 50 Ohms, Vo = 1.4V -0.5 0.5 mV 1 Iib+ Input Bias Current V+ = 5V, Vcm = 0V -10 10 nA 1 Iib- Input Bias Current V+ = 5V, Vcm = 0V -10 10 nA 1 DC/AC PARAMETERS: POST RADIATION LIMITS +25 C (The following conditions apply to all the following parameters, unless otherwise specified.) DC: All voltages referenced to device ground. Vio +Iib Input Offset Voltage Input Bias Current V+ = 30V, Vcm = 0V, Rs = 50 Ohms, Vo = 1.4V 3 -4 4 mV 1 V+ = 30V, Vcm = 28V, Rs = 50 Ohms, Vo = 1.4V 3 -4 4 mV 1 V+ = 5V, Vcm = 0V, Rs = 50 Ohms, Vo = 1.4V 3 -4 4 mV 1 V+ = 5V, Vcm = 0V 3 -60 -1 nA 1 6 MICROCIRCUIT DATA SHEET MNLM158A-X-RH REV 1B1 Note 1: Note 2: Note 3: Parameter tested go-no-go only. Guaranteed parameter not tested. Pre and post irradiation limits are identical to those listed under AC and DC electrical characteristics except as listed in the Post Radiation Limits Table. These parts may be dose rate sensitive in a space environment and demonstrate enhanced low dose rate effect. Radiation end point limits for the noted parameters are guaranteed only for the conditions as specified in MIL-STD-883, Method 1019.5. 7 MICROCIRCUIT DATA SHEET MNLM158A-X-RH REV 1B1 Graphics and Diagrams GRAPHICS# DESCRIPTION 06354HRB2 CERAMIC SOIC (WG), 10 LEAD (B/I CKT) 08571HRC2 METAL CAN (H), TO-99, 8LD, .200 DIA P.C. (B/I CKT) 09294HR01 CERDIP (J), 8 LEAD (B/I CKT) H08CRF METAL CAN (H), TO-99, 8LD, .200 DIA P.C. (P/P DWG) J08ARL CERDIP (J), 8 LEAD (P/P DWG) P000273A METAL CAN (H), TO-99, 8 LD, .200 DIA P.C. (PINOUT) P000274A CERDIP (J), 8 LEAD (PINOUT) P000461A CERAMIC SOIC (WG), 10 LEAD (PINOUT) WG10ARC CERAMIC SOIC (WG), 10 LEAD (P/P DWG) See attached graphics following this page. 8 N N V+ OUTA 1 10 -IN A 2 9 OUT B +IN A 3 8 -IN B GND 4 7 +IN B N/C 5 6 N/C LM158AWG, LM158WG 10 - LEAD CERAMIC SOIC CONNECTION DIAGRAM TOP VIEW P000461A N MIL/AEROSPACE OPERATIONS 2900 SEMICONDUCTOR DRIVE SANTA CLARA, CA 95050 MICROCIRCUIT DATA SHEET MNLM158A-X-RH REV 1B1 Revision History Rev ECN # Originator Changes 0A0 M0003236 03/10/00 Rel Date Rose Malone Initial MDS Release: MNLM158A-X-RH, Rev. 0A0 - Added Rad Hard Devices and Limits. Replaces MNLM158A-X, Rev. 3A0. 0B1 M0003533 03/23/00 Rose Malone Update MDS: MNLM158A-X-RH, Rev. 0A0 to MNLM158A-X-RH, Rev. 0B1. Added reference to WG pkg - onto Main Table, Absolute Section and drawings to graphics section. 0C1 M0003643 05/15/00 Rose Malone Update MDS - MNLM158A-X-RH, Rev. 0B1 to MNLM158A-X-RH, Rev. 0C1. Corrected typo Package Weight for CERAMIC SOIC from 200mg to 220mg, in Absolute Maximum Section. 0D1 M0003679 05/24/01 Rose Malone Update MDS: MNLM158A-X-RH, Rev. 0C1 to MNLM158A-X-RH, Rev. 0D1. Corrected typo's on Main Table, Features Section and Absolute Section. 1A1 M0003806 04/08/02 Rose Malone UPDATE MDS: MNLM158A-X-RH, Rev. 0D1 to MNLM158A-X-RH, Rev. 1A1. Updated Electrical Section, Conditions for Isink FROM (V+ = 15V, Vout = 200mV, Vin = 65mV): TO (V+ = 15V, Vout = 200mV, +Vin = 0V, -Vin = +65mV) Isource FROM: (V+ = 15V, Vin = 65mV, Vout = 2V) TO (V+ = 15V, Vout = 2V, +Vin = 0V, -Vin = -65mV) 1B1 M0003984 04/08/02 Rose Malone Update MDS: MNLM158A-X-RH, Rev. 1A1 to MNLM158A-X-RH, Rev. 1B1. Deleted reference to LM158AHLQML, LM158AJLQML, LM158AWGLQML from Main Table and Features Section product un-available. 9