ETC LM158AJLQMLV

MICROCIRCUIT DATA SHEET
Original Creation Date: 01/14/99
Last Update Date: 04/08/02
Last Major Revision Date: 05/18/01
MNLM158A-X-RH REV 1B1
LOW POWER, DUAL OPERATIONAL AMPLIFIER: ALSO AVAILABLE
GUARANTEED TO 50K RAD (Si) TESTED TO MIL-STD-883,
METHOD 1019.5
General Description
The LM158A consists of two independent, high gain, internally frequency compensated
operational amplifiers which were designed specifically to operate from a single power
supply over a wide range of voltages. Operation from split power supplies is also
possible and the low power supply current drain is independent of magnitude of the power
supply voltage.
Application areas include transducer amplifiers, dc gain blocks and all the conventional
op amp circuits which now can be more easily implemented in single power supply systems.
For example, the LM158A can be directly operated off of the standard +5V DC power supply
voltage which is used in digital systems and will easily provide the required interface
electronics without requiring the additional + 15V DC power supplies.
Industry Part Number
NS Part Numbers
LM158
LM158AH-QMLV
LM158AH/883
LM158AHLQMLV
LM158AJ-QMLV
LM158AJ/883
LM158AJLQMLV
LM158AWG-QMLV
LM158AWG/883
LM158AWGLQMLV
Prime Die
LM158
Controlling Document
SEE FEATURES SECTION
Processing
Subgrp Description
MIL-STD-883, Method 5004
1
2
3
4
5
6
7
8A
8B
9
10
11
Quality Conformance Inspection
MIL-STD-883, Method 5005
1
Static tests at
Static tests at
Static tests at
Dynamic tests at
Dynamic tests at
Dynamic tests at
Functional tests at
Functional tests at
Functional tests at
Switching tests at
Switching tests at
Switching tests at
Temp ( oC)
+25
+125
-55
+25
+125
-55
+25
+125
-55
+25
+125
-55
MICROCIRCUIT DATA SHEET
MNLM158A-X-RH REV 1B1
Features
-
Internally frequency compensated for unity gain
Large dc voltage gain
100dB
Wide bandwidth (unity gain temperature compensated)
1MHz
Wide power supply range:
- Single supply 3V to 32V or dual supplies +1.5V to +16V
Very low supply current drain (500uA) - essentiely independent of supply voltage
Low input offset voltage
2mV
Input common-mode voltage range includes ground
Differential input voltage range equal to the power supply voltage
Large output voltage swing
0V to V+ - 1.5V
CONTROLLING DOCUMENTS:
LM158AH-QMLV
5962-8771002VGA
LM158AH/883
5962-8771002GA
LM158AHLQMLV
5962L8771002VGA
LM158AJ-QMLV
5962-8771002VPA
LM158AJ/883
5962-8771002PA
LM158AJLQMLV
5962L8771002VPA
LM158AWG-QMLV
5962-8771002VXA
LM158AWG/883
5962-8771002QXA
LM158AWGLQMLV
5962L8771002VXA
2
MICROCIRCUIT DATA SHEET
MNLM158A-X-RH REV 1B1
(Absolute Maximum Ratings)
(Note 1)
Supply Voltage, V+
32Vdc
Differential Input Voltage
32Vdc
Input Voltage
-0.3Vdc to +32Vdc
Power Dissipation
(Note 2)
830 mW
Output Short-Circuit to GND
(Note 3)
(One Amplifier)
V+ < 15Vdc and TA = 25 C
Maximum Junction Temperature
Continuous
150 C
Input Current (Vin < -0.3Vdc)
(Note 4)
50mA
Operating Temperature Range
-55 C < Ta < +125 C
Storage Temperature Range
-65 C < Ta < +150 C
Lead Temperature
(Soldering, 10 seconds)
METAL CAN
CERDIP
CERAMIC SOIC
Thermal Resistance
ThetaJA
METAL CAN
(Still Air)
(500LF/Min Air Flow)
CERDIP
(Still Air)
(500LF/Min Air Flow)
CERAMIC SOIC (Still Air)
(500LF/Min Air Flow)
300 C
260 C
260 C
155
80
132
81
195
131
ThetaJC
METAL CAN
CERDIP
CERAMIC SOIC
Package Weight
(Typcial)
METAL CAN
CERDIP
CERAMIC SOIC
ESD Tolerance
(Note 5)
C/W
C/W
C/W
C/W
C/W
C/W
42 C/W
23 C/W
33 C/W
1000mg
1100mg
220mg
250V
3
MICROCIRCUIT DATA SHEET
MNLM158A-X-RH REV 1B1
Note 1:
Note 2:
Note 3:
Note 4:
Note 5:
Absolute Maximum Ratings indicate limits beyond which damage to the device may occur.
Operating Ratings indicate conditions for which the device is functional, but do not
guarantee specific performance limits. For guaranteed specifications and test
conditions, see the Electrical Characteristics. The guaranteed specifications apply
only for the test conditions listed. Some performance characteristics may degrade
when the device is not operated under the listed test conditions.
The maximum power dissipation must be derated at elevated temperatures and is
dictated by Tjmax (maximum junction temperature), ThetaJA (package junction to
ambient thermal resistance), and TA (ambient temperature). The maximum allowable
power dissipation at any temperature is Pdmax = (Tjmax - TA)/ThetaJA or the number
given in the Absolute Maximum Ratings, whichever is lower.
Short circuits from the output to V+, can cause excessive heating and eventual
destruction. When considering short circuits to ground, the maximum output current is
approximately 40 mA independent of the magnitude of V+. At values of supply voltage
in excess of +15Vdc, continuous short-circuits can exceed the power dissipation
ratings and cause eventual destruction. Destructive dissipation can result from
simultaneous shorts on all amplifiers.
This input current will only exist when the voltage at any of the input leads is
driven negative. It is due to the collector-base junction of the input PNP
transistors becoming forward baised and thereby acting as input diode clamps. In
addition to this diode action, there is also lateral NPN parasitic transistor action
on the IC chip. This transistor action can cause the output voltages of the op amps
to go to the V+ voltage level (or to ground for a large overdrive) for the time
duration that an input is driven negative. This is not destructive and normal output
states will re-establish when the input voltage, which was negative, again returns to
a value greater that -0.3Vdc (at 25C).
Human body model, 1.5 K ohms in series with 100 pF.
4
MICROCIRCUIT DATA SHEET
MNLM158A-X-RH REV 1B1
Electrical Characteristics
DC PARAMETERS
(The following conditions apply to all the following parameters, unless otherwise specified.)
DC: All voltages referenced to device ground.
SYMBOL
Icc
Voh
Vol
PARAMETER
Power Supply
Current
Output Voltage
High
Output Voltage
Low
CONDITIONS
NOTES
PINNAME
MIN
Isource
Output Source
Current
SUBGROUPS
1.2
mA
1, 2,
3
V+ = 30V, Rl = 100K, Vo = 1.4V
3
mA
1
4
mA
2, 3
V+ = 30V, Rl = 2K Ohms
26
V
1, 2,
3
V+ = 30V, Rl = 10K Ohms
27
V
1, 2,
3
40
mV
1
100
mV
2, 3
40
mV
1
100
mV
2, 3
40
mV
1
100
mV
2, 3
V+ = 30V, Rl = 10K Ohms
V+ = 5V, Rl = 10K Ohms
Output Sink
Current
UNIT
V+ = 5V, Rl = 100K, Vo = 1.4V
V+ = 30V, Isink = 1uA
Isink
MAX
V+ = 15V, Vout = 200mV, +Vin = 0V,
-Vin = +65mV
12
uA
1
V+ = 15V, Vout = 2V, +Vin = 0V,
-Vin = +65mV
10
mA
1
5
mA
2, 3
-20
mA
1
-10
mA
2, 3
mA
1
V+ = 15V, Vout = 2V, +Vin = 0V,
-Vin = -65mV
Ios
Short Circuit
Current
V+ = 5V, Vout = 0V
-60
Vio
Input Offset
Voltage
V+ = 30V, Vcm = 0V, Rs = 50 Ohms,
Vo = 1.4V
-2
2
mV
1
-4
4
mV
2, 3
V+ = 30V, Vcm = 28V, Rs = 50 Ohms,
Vo = 1.4V
-4
4
mV
2, 3
V+ = 5V, Vcm = 0V, Rs = 50 Ohms,
Vo = 1.4V
-2
2
mV
1
-4
4
mV
2, 3
V+ = 30V, Vcm = 28.5V,
Rs = 50 Ohms,Vo = 1.4V
-2
2
mV
1
dB
1
CMRR
Common Mode
Rejection Ratio
V+ = 30V, Vin = 0V to 28.5V,
Rs = 50 Ohms
70
Iib+
Input BIas
Current
V+ = 5V, Vcm = 0V
-50
-1
nA
1
-100
-1
nA
2, 3
5
MICROCIRCUIT DATA SHEET
MNLM158A-X-RH REV 1B1
Electrical Characteristics
DC PARAMETERS(Continued)
(The following conditions apply to all the following parameters, unless otherwise specified.)
DC: All voltages referenced to device ground.
SYMBOL
Iib-
Iio
PARAMETER
Input BIas
Current
Input Offset
Current
CONDITIONS
NOTES
V+ = 5V, Vcm = 0V
V+ = 5V, Vcm = 0V
PSRR
Power Supply
Rejection Ratio
V+ = 5V to 30V, Vcm = 0V
Vcm
Common Mode
Voltage Range
V+ = 30V
Vdiff
Differential
Input Voltage
Avs
Large Signal Gain
PINNAME
MIN
MAX
UNIT
SUBGROUPS
-50
-1
nA
1
-100
-1
nA
2, 3
-10
10
nA
1
-30
30
nA
2, 3
dB
1
65
1
28.5
V
1
1
28.0
V
2, 3
2
32
V
1, 2,
3
V+ = 15V, Rl = 2K Ohms, Vo = 1V to 11V
50
V/mV 4
25
V/mV 5, 6
DC PARAMETERS: DRIFT VALUES
(The following conditions apply to all the following parameters, unless otherwise specified.)
DC: All voltages referenced to device ground. "Delta calculations performed on Jan "S" and "QMLV" devices
at Group B, Subgroup 5 only."
Vio
Input Offset
Voltage
V+ = 30V, Vcm = 0V, Rs = 50 Ohms,
Vo = 1.4V
-0.5
0.5
mV
1
V+ = 30V, Vcm = 28V, Rs = 50 Ohms,
Vo = 1.4V
-0.5
0.5
mV
1
V+ = 5V, Vcm = 0V, Rs = 50 Ohms,
Vo = 1.4V
-0.5
0.5
mV
1
Iib+
Input Bias
Current
V+ = 5V, Vcm = 0V
-10
10
nA
1
Iib-
Input Bias
Current
V+ = 5V, Vcm = 0V
-10
10
nA
1
DC/AC PARAMETERS: POST RADIATION LIMITS +25 C
(The following conditions apply to all the following parameters, unless otherwise specified.)
DC: All voltages referenced to device ground.
Vio
+Iib
Input Offset
Voltage
Input Bias
Current
V+ = 30V, Vcm = 0V, Rs = 50 Ohms,
Vo = 1.4V
3
-4
4
mV
1
V+ = 30V, Vcm = 28V, Rs = 50 Ohms,
Vo = 1.4V
3
-4
4
mV
1
V+ = 5V, Vcm = 0V, Rs = 50 Ohms,
Vo = 1.4V
3
-4
4
mV
1
V+ = 5V, Vcm = 0V
3
-60
-1
nA
1
6
MICROCIRCUIT DATA SHEET
MNLM158A-X-RH REV 1B1
Note 1:
Note 2:
Note 3:
Parameter tested go-no-go only.
Guaranteed parameter not tested.
Pre and post irradiation limits are identical to those listed under AC and DC
electrical characteristics except as listed in the Post Radiation Limits Table. These
parts may be dose rate sensitive in a space environment and demonstrate enhanced low
dose rate effect. Radiation end point limits for the noted parameters are guaranteed
only for the conditions as specified in MIL-STD-883, Method 1019.5.
7
MICROCIRCUIT DATA SHEET
MNLM158A-X-RH REV 1B1
Graphics and Diagrams
GRAPHICS#
DESCRIPTION
06354HRB2
CERAMIC SOIC (WG), 10 LEAD (B/I CKT)
08571HRC2
METAL CAN (H), TO-99, 8LD, .200 DIA P.C. (B/I CKT)
09294HR01
CERDIP (J), 8 LEAD (B/I CKT)
H08CRF
METAL CAN (H), TO-99, 8LD, .200 DIA P.C. (P/P DWG)
J08ARL
CERDIP (J), 8 LEAD (P/P DWG)
P000273A
METAL CAN (H), TO-99, 8 LD, .200 DIA P.C. (PINOUT)
P000274A
CERDIP (J), 8 LEAD (PINOUT)
P000461A
CERAMIC SOIC (WG), 10 LEAD (PINOUT)
WG10ARC
CERAMIC SOIC (WG), 10 LEAD (P/P DWG)
See attached graphics following this page.
8
N
N
V+
OUTA
1
10
-IN A
2
9
OUT B
+IN A
3
8
-IN B
GND
4
7
+IN B
N/C
5
6
N/C
LM158AWG, LM158WG
10 - LEAD CERAMIC SOIC
CONNECTION DIAGRAM
TOP VIEW
P000461A
N
MIL/AEROSPACE OPERATIONS
2900 SEMICONDUCTOR DRIVE
SANTA CLARA, CA 95050
MICROCIRCUIT DATA SHEET
MNLM158A-X-RH REV 1B1
Revision History
Rev
ECN #
Originator
Changes
0A0
M0003236 03/10/00
Rel Date
Rose Malone
Initial MDS Release: MNLM158A-X-RH, Rev. 0A0 - Added
Rad Hard Devices and Limits. Replaces MNLM158A-X, Rev.
3A0.
0B1
M0003533 03/23/00
Rose Malone
Update MDS: MNLM158A-X-RH, Rev. 0A0 to MNLM158A-X-RH,
Rev. 0B1. Added reference to WG pkg - onto Main Table,
Absolute Section and drawings to graphics section.
0C1
M0003643 05/15/00
Rose Malone
Update MDS - MNLM158A-X-RH, Rev. 0B1 to MNLM158A-X-RH,
Rev. 0C1. Corrected typo Package Weight for CERAMIC
SOIC from 200mg to 220mg, in Absolute Maximum Section.
0D1
M0003679 05/24/01
Rose Malone
Update MDS: MNLM158A-X-RH, Rev. 0C1 to MNLM158A-X-RH,
Rev. 0D1. Corrected typo's on Main Table, Features
Section and Absolute Section.
1A1
M0003806 04/08/02
Rose Malone
UPDATE MDS: MNLM158A-X-RH, Rev. 0D1 to MNLM158A-X-RH,
Rev. 1A1. Updated Electrical Section, Conditions for
Isink FROM (V+ = 15V, Vout = 200mV, Vin = 65mV): TO
(V+ = 15V, Vout = 200mV, +Vin = 0V, -Vin = +65mV)
Isource FROM: (V+ = 15V, Vin = 65mV, Vout = 2V) TO
(V+ = 15V, Vout = 2V, +Vin = 0V, -Vin = -65mV)
1B1
M0003984 04/08/02
Rose Malone
Update MDS: MNLM158A-X-RH, Rev. 1A1 to MNLM158A-X-RH,
Rev. 1B1. Deleted reference to LM158AHLQML,
LM158AJLQML, LM158AWGLQML from Main Table and Features
Section product un-available.
9