1617AB35 35 Watts, 25 Volts, Class AB Satcom 1600 - 1700 MHz GENERAL DESCRIPTION CASE OUTLINE The 1617AB35 is a COMMON EMITTER transistor capable of providing 35 Watts of Class AB, RF output power over the band 1600 - 1700 MHz. This transistor is specifically designed for SATCOM COMMUNICATIONS amplifier applications. It includes Input prematching and utilizes Gold metalization and EMITTER BALLASTING to provide high reliability and supreme ruggedness. . 55AR, STYLE 2 COMMON EMITTER ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation @ 25oC 120 Watts Maximum Voltage and Current BVces Collector to Emitter Voltage LVceo Collector to Emitter Voltage BVebo Emitter to Base Voltage Ic Collector Current 60 Volts 27 Volts 3.5 Volts 14.0 Amps Maximum Temperatures Storage Temperature Operating Junction Temperature A49 - 65 to + 150 oC + 230 oC ELECTRICAL CHARACTERISTICS @ 25 OC SYMBOL CHARACTERISTICS Pout Pin Pg VSWR IMD3 Power Out Power Input Power Gain Collector Efficiency Load Mismatch Tolerance 3rd Order IMD BVces LVceo BVebo Ices hFE Cob θjc Collector to Emitter Breakdown Collector to Emitter Breakdown Emitter to Base Breakdown Collector Leakage Current DC - Current Gain Output Capacitance Thermal Resistance ηc TEST CONDITIONS F =1700 MHz Vce = 25 Volts Icq = 250 mAmps As Above As Above As Above Ic = 50 mA Ic = 50 mA Ie = 10 mA Vce = 27 Volts Vce = 5 V, Ic = 0.7 A F =1 MHz, Vcb = 28 V Tc = 25oC MIN TYP MAX 35 4.5 9.0 10.0 50 3:1 -30 60 27 3.5 10 100 20 UNITS Watt Watt dB % dBc Volts Volts Volts mA 36 1.6 o pF C/W Issue January 1996 GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY. GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120 Typical Performance 1617AB35 August 1996