Data sheet, BGV503, November 2002 BGV503 Negative Voltage Generator for biasing GaAs FETs and Power Amplifiers Wireless Si l i c on Di s c rete s N e v e r s t o p t h i n k i n g . Edition 2001-11-09 2002-11-11 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 2001 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). 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BGV503 Data sheet Revision History: 2002-11-11 Previous Version: 2001-05-16 Page Subjects (major changes since last revision) * Preliminary removed, Figure 3 (Application) updated For questions on technology, delivery and prices please contact the Infineon Technologies Offices in Germany or the Infineon Technologies Companies and Representatives worldwide: see our webpage at http://www.infineon.com We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: [email protected] Preliminary Negative Voltage Generator BGV503 for biasing GaAs FETs and Power Amplifiers Features • one-stage charge-pump with internal drain current regulator for biasing GaAs-FETs • Operating Voltage Range: + 2.7V … 5.0V • Typical Output Voltage: – 2.5V • Output Current: 3mA (typ) • p-p Output Voltage Ripple: 25mV … 40mV @ COUT = 1µF; IOUT = 3mA • Integrated Oscillator fOSZ : 230kHz • Standby Supply Current: < 5µA • Logic-Level Shutdown Mode ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Package Marking BGV503 P-TSSOP-10 BGV503S Data sheet 4 2001-11-09 2002-11-11 BGV503 Preliminary Electrical Characteristics at TA=25°C, unless otherwise specified Characteristics Limit Values min. Input Voltage Range typ. Unit max. 2.7 5.0 V Ground (VSS) 0 Output Voltage - 2.1 - 1.4 V - 2.5 - 1.7 V - 4.6 - 3.9 V V mA VCC = 2.7 V; IOUT = 3 mA VCC = 3.0 V; IOUT = 3 mA VCC = 5.0 V; IOUT = 3 mA VCC = 3.0 V; Rload = 1 kΩ VCC = 3.0 V; IOUT = 0 mA VCC = 3.0 V; IOUT = 3 mA VCC = 3.0 V % IOUT = 0 mA Power Efficiency 76 % Output Voltage Ripple1) 20 mV 100 mV No-Load Supply Current TA=-40°C 0.65 Voltage Conversion Efficiency 99.6 2.0 Shutdown/Enable Input Bias Current 1 µA Shutdown Input Supply Current 5 µA Turn On Time Temperature Range 1) Test Conditions µs 51 - 40 105 °C COUT = 100 nF Data sheet 5 2001-11-09 2002-11-11 BGV503 Confidential Pin Descripion Pin No. Pin Name Description 1 Sense resistor for the regulator 2 RREF VREF 3 NV Negative output-voltage (unregulated) 4 Ground connection 8 VSS VCC VDISQ VCON VNEG 9 C1D Charge pump capacitor 10 C2P Charge pump capacitor 5 6 7 Reference voltage of the regulator Positive supply voltage Enable (TTL compatible) Reference voltage of the regulator Regulated output voltage for biasing GaAs FETs Pin Configuration R REF 1 10 C2P VREF 2 9 C1D NV 3 8 VNEG VSS 4 7 VCON VCC 5 6 VDISQ BGV 503 EHT08501 Figure 1 Data sheet BGV503 in Package P-TSSOP-10 6 2001-11-09 2002-11-11 BGV503 Preliminary Functional Block Diagram The BGV503 is a charge pump based negative voltage generator. The supply voltage (VCC) is inverted and applied to the output NV The BGV503 consists of an internal oscillator, a switching control circuit, the internal charge pump switches and a drain current regulator. C 1 D V C 1 P C C The switching frequency (clk) of the charge-pump is determined by the integrated oscillator and is between 100 kHz and 400 kHz. It is possible to stop the operating of the BGV503 by connecting VDISQ to a voltage lower than 1 V (shutdown mode). The switching control circuit ensures that the internal MOS-switches of the charge-pump operate at the correct time. The regulator consists of two transistors and two internal resistors. It can be used to control the biasing of Power amplifiers or GaAs-FET amplifiers (see Figure 3). g 1 V D IS Q o s c illa to r c lk s w itc h in g c o n tro l g 1 d g 2 o n c h a rg e p u m p N V g 2 o ff R R E F C O N V R E F V N E G * / 8 # ! V S S V re g u la to r Figure 2 Data sheet Block Diagram of the Negative Voltage Generator 7 2001-11-09 2002-11-11 BGV503 Confidential Typical Applications For all applications use capacitors with low effective series resistance (ESR) to maintain a low dropout voltage with high stability, good conversion efficiency and a low p-p voltage ripple. An additional capacitor in the supply line (between VCC and VSS) is useful to reduce the AC input impedance. As a consequence, this minimize the spurious signals (EMI) on the supply lines, that came from the current peaks when the BGV503 is switching. The value of this capacitor depends on the circuit configuration and on customer requirements concerning EMI; 1 µF is regarded as sufficient. G N D R V B a tt R E F = 1 R V 3 G N D 5 1 µ F G N D R E F C 1 P R E F C 1 D V N E G N V 4 V C C 1 0 0 n F G N D * / 8 # ! 0 .5 V Id 2 O U T 5 6 p F d V S S V C O N V C C V D IS Q V C C 1 0 1 0 0 n F 9 8 1 0 0 n F 7 6 E N A B L E C 2 R F o u t R 2 G N D 1 8 k 1 0 n F C F H 4 0 0 1 0 k R F C 1 L 1 in G N D Figure 3 L 2 1 0 k 4 .7 k G N D R 1 B A V 9 9 G N D 1 0 0 n F I G N D G N D BGV503; Inverting charge pump with GaAs FET drain current regulation loop Note: For the above application see Application note No. 80 Data sheet 8 2001-11-09 2002-11-11 BGV503 Preliminary Typical Operating Characteristics Supply Current vs. Temperature @ I = 0mA out VCC = parameter Output Voltage vs. Load Current VCC = parameter −1.5 1400 1300 −2 1200 2.7V 1100 3V −2.5 900 NV [V] ISUP [uA] 1000 5V 800 −3 −3.5 700 4V 600 −4 3V 500 400 −4.5 2.7V 5V 300 −5 200 −40 −20 0 20 40 60 80 100 0 120 1 Oscillator Frequency vs. Temperature @ I = 3mA out V = parameter CC 4 5 6 Power Efficiency vs. Load Current 400 PAE 5V EHT08519 80 % 75 3V 70 300 fosz[kHz] 3 IOUT [mA] T [C] 350 2 VCC = 2.7V 250 65 200 60 150 55 100 −40 −20 0 20 40 60 80 100 50 120 T [C] Data sheet 2.7 V 3V 4V 5V 0 0.001 0.002 0.003 0.004 A 0.006 IOUT 9 2001-11-09 2002-11-11 BGV503 Confidential Ripple vs. Output-Capacity (peak to peak) @ IOUT = 3 mA EHT08516 250 VRipple Output Voltage vs. Supply Voltage @ Iout = 3mA −1 mV −1.5 200 −2 −2.5 150 NV [V] −3 100 −3.5 −4 −4.5 VCC = 5 V 50 −5 4V 3V 0 1 10 10 2 −5.5 10 3 −6 nF 10 4 2 3 4 5 COUT Output Voltage, AC-coupled, VCC = 3 V, IOUT = 3 mA, COUT = 100 nF Output Voltage, AC-coupled, VCC = 3 V, IOUT = 0 mA, COUT = 100 nF EHT08520 EHT08521 C2 Pk-Pk 12.8 mV 2 C2 Pk-Pk 88.0 mV 2 Ch2 10.0 mV Data sheet 6 VCC [V] B W M 1.00 µs Ch2 20.0 mV 10 B W M 1.00 µs 2001-11-09 2002-11-11 BGV503 Preliminary Package Outline 0.5 0.1 A A 0.22 ±0.05 0.08 M 6 max. 0.42 +0.15 -0.1 A B C 4.9 3 ±0.1 C +0.08 0.125 -0.0 5 3 ±0.1 H 0.09 0.1 max. 0.85 ±0.1 1.05 max. P-TSSOP-10 (Plastic Thin Shrink Small Outline Package) 0.25 A B C B Index Marking Data sheet 11 2001-11-09 2002-11-11