BZX84C2V4ET1 Series Zener Voltage Regulators 225 mW SOT−23 Surface Mount This series of Zener diodes is offered in the convenient, surface mount plastic SOT−23 package. These devices are designed to provide voltage regulation with minimum space requirement. They are well suited for applications such as cellular phones, hand held portables, and high density PC boards. http://onsemi.com Specification Features: • • • • • • 3 Cathode 225 mW Rating on FR−4 or FR−5 Board Zener Breakdown Voltage Range − 2.4 V to 75 V Package Designed for Optimal Automated Board Assembly Small Package Size for High Density Applications ESD Rating of Class 3 (>16 KV) per Human Body Model Peak Power − 225 Watt (8 X 20 s) 1 Anode 3 1 2 Mechanical Characteristics: CASE: Void-free, transfer-molded, thermosetting plastic case FINISH: Corrosion resistant finish, easily solderable MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: SOT−23 CASE 318 STYLE 8 260°C for 10 Seconds POLARITY: Cathode indicated by polarity band FLAMMABILITY RATING: UL94 V−0 xxx MAXIMUM RATINGS Rating Symbol Max Unit Peak Power Dissipation @ 20 s (Note 1) @ TL ≤ 25°C Ppk 225 Watts Total Power Dissipation on FR−5 Board, (Note 2) @ TA = 25°C Derated above 25°C PD 225 1.8 mW mW/°C 556 °C/W Thermal Resistance − Junction to Ambient Total Power Dissipation on Alumina Substrate, (Note 3) @ TA = 25°C Derated above 25°C Thermal Resistance − Junction to Ambient Junction and Storage Temperature Range RJA PD 300 2.4 mW mW/°C RJA 417 °C/W TJ, Tstg −65 to +150 °C M MARKING DIAGRAM xxx = Specific Device Code M = Date Code ORDERING INFORMATION Device Package Shipping BZX84CxxxET1 SOT−23 3000/Tape & Reel BZX84CxxxET3 SOT−23 10,000/Tape & Reel DEVICE MARKING INFORMATION 1. Non−repetitive current pulse per Figure 9 2. FR−5 = 1.0 X 0.75 X 0.62 in. 3. Alumina = 0.4 X 0.3 X 0.024 in., 99.5% alumina See specific marking information in the device marking column of the Electrical Characteristics table on page 2 of this data sheet. Devices listed in bold, italic are ON Semiconductor Preferred devices. Preferred devices are recommended choices for future use and best overall value. †The “T1” suffix refers to an 8 mm, 7 inch reel. The “T3” suffix refers to an 8 mm, 13 inch reel. Semiconductor Components Industries, LLC, 2003 August, 2003 − Rev. 0 1 Publication Order Number: BZX84C2V4ET1/D BZX84C2V4ET1 Series ELECTRICAL CHARACTERISTICS I (Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25°C unless otherwise noted, VF = 0.95 V Max. @ IF = 10 mA) Parameter Symbol VZ Reverse Zener Voltage @ IZT IZT Reverse Current ZZT Maximum Zener Impedance @ IZT VZ VR IR Reverse Leakage Current @ VR VR Reverse Voltage IF Forward Current VF Forward Voltage @ IF VZ C IF V IR VF IZT Maximum Temperature Coefficient of VZ Zener Voltage Regulator Max. Capacitance @ VR = 0 and f = 1 MHz ELECTRICAL CHARACTERISTICS (Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25°C unless otherwise noted, VF = 0.90 V Max. @ IF = 10 mA) VZ1 (Volts) @ IZT1 = 5 mA (Note 4) VZ2 (Volts) @ IZT2 = 1 mA (Note 4) VZ3 (Volts) @ IZT3 = 20 mA (Note 4) Device Device Marking Min Nom Max ZZT1 (Ohms) @ IZT1 = 5 mA Min Max ZZT2 (Ohms) @ IZT2 = 1 mA Min Max ZZT3 (Ohms) @ IZT3 = 20 mA BZX84C3V3ET1 BZX84C4V7ET1 BZX84C5V1ET1 BZX84C5V6ET1 BZX84C6V2ET1 Z14 Z1 Z2 Z3 Z4 3.1 4.4 4.8 5.2 5.8 3.3 4.7 5.1 5.6 6.2 3.5 5 5.4 6 6.6 95 80 60 40 10 2.3 3.7 4.2 4.8 5.6 2.9 4.7 5.3 6 6.6 600 500 480 400 150 3.6 4.5 5 5.2 5.8 4.2 5.4 5.9 6.3 6.8 40 15 15 10 6 BZX84C6V8ET1 BZX84C7V5ET1 BZX84C10ET1 BZX84C12ET1 BZX84C15ET1 Z5 Z6 Z9 Y2 Y4 6.4 7 9.4 11.4 14.3 6.8 7.5 10 12 15 7.2 7.9 10.6 12.7 15.8 15 15 20 25 30 6.3 6.9 9.3 11.2 13.7 7.2 7.9 10.6 12.7 15.5 80 80 150 150 200 6.4 7 9.4 11.4 13.9 7.4 8 10.7 12.9 15.7 BZX84C16ET1 BZX84C18ET1 BZX84C24ET1 Y5 Y6 Y9 15.3 16.8 22.8 16 18 24 17.1 19.1 25.6 40 45 70 15.2 16.7 22.7 17 19 25.5 200 225 250 15.4 16.9 22.9 17.2 19.2 25.7 VZ1 Below @ IZT1 = 2 mA Device BZX84C27ET1 Device Marking Min Nom Max ZZT1 Below @ IZT1 = 2 mA Y10 25.1 27 28.9 80 VZ2 Below @ IZT2 = 0.1 mA Min Max ZZT2 Below @ IZT4 = 0.5 mA 25 28.9 300 VZ3 Below @ IZT3 = 10 mA 2 Min Max C (pF) @ VR = 0 f = 1 MHz 5 3 2 1 3 1 2 2 2 4 −3.5 −3.5 −2.7 −2.0 0.4 0 0.2 1.2 2.5 3.7 450 260 225 200 185 6 6 10 10 20 2 1 0.2 0.1 0.05 4 5 7 8 10.5 1.2 2.5 4.5 6.0 9.2 4.5 5.3 8.0 10.0 13.0 155 140 130 130 110 20 20 25 0.05 0.05 0.05 11.2 12.6 16.8 10.4 12.4 18.4 14.0 16.0 22.0 105 100 80 Min Max 25.2 29.3 45 http://onsemi.com VZ (mV/k) @ IZT1 = 5 mA VR Volts ZZT3 Below @ IZT3 = 10 mA 4. Zener voltage is measured with a pulse test current IZ at an ambient temperature of 25°C Max Reverse Leakage Current IR A @ Max Reverse Leakage Current IR A 0.05 @ VZ (mV/k) Below @ IZT1 = 2 mA VR Volts Min Max C (pF) @ VR = 0 f = 1 MHz 18.9 21.4 25.3 70 BZX84C2V4ET1 Series 8 100 7 θ VZ, TEMPERATURE COEFFICIENT (mV/°C) θ VZ, TEMPERATURE COEFFICIENT (mV/°C) TYPICAL CHARACTERISTICS TYPICAL TC VALUES 6 5 4 VZ @ IZT 3 2 1 0 −1 −2 −3 2 3 4 5 6 7 8 9 10 VZ, NOMINAL ZENER VOLTAGE (V) 11 12 TYPICAL TC VALUES VZ @ IZT 10 1 10 100 VZ, NOMINAL ZENER VOLTAGE (V) Figure 1. Temperature Coefficients (Temperature Range − 55°C to +150°C) Figure 2. Temperature Coefficients (Temperature Range − 55°C to +150°C) 1000 IZ = 1 mA 100 TJ = 25°C IZ(AC) = 0.1 IZ(DC) f = 1 kHz IF, FORWARD CURRENT (mA) Z ZT, DYNAMIC IMPEDANCE (Ω ) 1000 75 V (MMBZ5267BLT1) 91 V (MMBZ5270BLT1) 100 5 mA 20 mA 10 10 150°C 1 1 10 VZ, NOMINAL ZENER VOLTAGE 100 1 0.4 Figure 3. Effect of Zener Voltage on Zener Impedance 0.5 75°C 25°C 0.6 0°C 0.7 0.8 0.9 1.0 VF, FORWARD VOLTAGE (V) Figure 4. Typical Forward Voltage http://onsemi.com 3 1.1 1.2 BZX84C2V4ET1 Series TYPICAL CHARACTERISTICS 1000 1000 C, CAPACITANCE (pF) 0 V BIAS 1 V BIAS I R , LEAKAGE CURRENT (µA) TA = 25°C 100 BIAS AT 50% OF VZ NOM 10 1 1 10 VZ, NOMINAL ZENER VOLTAGE (V) 100 100 10 1 +150°C 0.1 0.01 0.001 +25 °C 0.0001 −55 °C 0.00001 0 10 Figure 5. Typical Capacitance 100 I Z , ZENER CURRENT (mA) 10 1 0.1 0.01 0 2 4 6 8 VZ, ZENER VOLTAGE (V) TA = 25°C 1 0.1 10 30 50 70 VZ, ZENER VOLTAGE (V) PEAK VALUE IRSM @ 8 s tr PULSE WIDTH (tP) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAY = 8 s 80 70 60 HALF VALUE IRSM/2 @ 20 s 50 40 30 tP 20 10 0 0 90 Figure 8. Zener Voltage versus Zener Current (12 V to 91 V) Figure 7. Zener Voltage versus Zener Current (VZ Up to 12 V) 90 80 10 0.01 12 10 100 30 40 50 60 70 VZ, NOMINAL ZENER VOLTAGE (V) Figure 6. Typical Leakage Current TA = 25°C % OF PEAK PULSE CURRENT I Z , ZENER CURRENT (mA) 100 20 20 40 60 t, TIME (s) Figure 9. 8 × 20 s Pulse Waveform http://onsemi.com 4 80 90 BZX84C2V4ET1 Series PACKAGE DIMENSIONS SOT−23 TO−236AB CASE 318−09 ISSUE AH A L 3 1 V B 2 S DIM A B C D G H J K L S V G C D H NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIUMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01, −02, AND −06 OBSOLETE, NEW STANDARD 318−09. K J INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0385 0.0498 0.0140 0.0200 0.0670 0.0826 0.0040 0.0098 0.0034 0.0070 0.0180 0.0236 0.0350 0.0401 0.0830 0.0984 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.99 1.26 0.36 0.50 1.70 2.10 0.10 0.25 0.085 0.177 0.45 0.60 0.89 1.02 2.10 2.50 0.45 0.60 STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE http://onsemi.com 5 BZX84C2V4ET1 Series ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: [email protected] JAPAN: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. N. American Technical Support: 800−282−9855 Toll Free USA/Canada http://onsemi.com 6 BZX84C2V4ET1/D