ETC FSGL230D1

FSGL230R
TM
Data Sheet
Radiation Hardened, SEGR Resistant
N-Channel Power MOSFETs
Intersil Star*Power Rad Hard
MOSFETs have been specifically
developed for high performance
applications in a commercial or
military space environment.
Star*Power MOSFETs offer the system designer both
extremely low rDS(ON) and Gate Charge allowing the
development of low loss Power Subsystems. Star*Power
Gold FETs combine this electrical capability with total dose
radiation hardness up to 100K RADs while maintaining the
guaranteed performance for Single Event Effects (SEE)
which the Intersil FS families have always featured.
July 2000
File Number
4872
Features
• 8A, 200V, rDS(ON) = 0.180Ω
• UIS Rated
TM
The Intersil family of Star*Power FETs includes a series of
devices in various voltage, current and package styles. The
portfolio consists of Star*Power and Star*Power Gold
products. Star*Power FETs are optimized for total dose and
rDS(ON) while exhibiting SEE capability at full rated voltage
up to an LET of 37. Star*Power Gold FETs have been
optimized for SEE and Gate Charge combining SEE
performance to 80% of the rated voltage for an LET of 82
with extremely low gate charge characteristics.
This MOSFET is an enhancement-mode silicon-gate power
field effect transistor of the vertical DMOS (VDMOS)
structure. It is specifically designed and processed to be
radiation tolerant. The MOSFET is well suited for
applications exposed to radiation environments such as
switching regulation, switching converters, power
distribution, motor drives and relay drivers as well as other
power control and conditioning applications. As with
conventional MOSFETs these Radiation Hardened
MOSFETs offer ease of voltage control, fast switching
speeds and ability to parallel switching devices.
• Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
• Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 82MeV/mg/cm2 with
VDS up to 80% of Rated Breakdown and
VGS of 5V Off-Bias
• Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BVDSS
- Typically Survives 2E12 if Current Limited to IAS
• Photo Current
- 3.0nA Per-RAD (Si)/s Typically
• Neutron
- Maintain Pre-RAD Specifications
for 1E13 Neutrons/cm2
- Usable to 1E14 Neutrons/cm2
Symbol
D
G
S
Packaging
TO-205AF
Reliability screening is available as either TXV or Space
equivalent of MIL-PRF-19500.
Formerly available as type TA45230W.
Ordering Information
RAD LEVEL
SCREENING LEVEL
D
S
PART NUMBER/BRAND
10K
Engineering samples
FSGL230D1
100K
TXV
FSGL230R3
100K
Space
FSGL230R4
1
G
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Intersil and Design is a trademark of Intersil Corporation. | Copyright © Intersil Corporation 2000
FSGL230R
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified
FSGL230R
UNITS
200
200
V
V
8
5
29
±30
A
A
A
V
25
10
0.20
29
8
29
-55 to 150
300
W
W
W/ oC
A
A
A
oC
oC
1.0 (Typical)
g
Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS
Drain to Gate Voltage (RGS = 20kΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current
TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS
Maximum Power Dissipation
TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT
TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulsed Avalanche Current, L = 100µH, (See Test Figure) . . . . . . . . . . . . . . . . . . . . . . . . IAS
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IS
Pulsed Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
(Distance >0.063in (1.6mm) from Case, 10s Max)
Weight (Typical)
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
TC = 25oC, Unless Otherwise Specified
Electrical Specifications
PARAMETER
SYMBOL
Drain to Source Breakdown Voltage
Gate Threshold Voltage
BVDSS
VGS(TH)
TEST CONDITIONS
ID = 1mA, VGS = 0V
VGS = VDS ,
ID = 1mA
Zero Gate Voltage Drain Current
IDSS
VDS = 160V,
VGS = 0V
Gate to Source Leakage Current
IGSS
VGS = ±30V
Drain to Source On-State Voltage
VDS(ON)
Drain to Source On Resistance
rDS(ON)12
Turn-On Delay Time
td(ON)
Rise Time
tr
Turn-Off Delay Time
td(OFF)
Fall Time
TC = -55oC
TC = 25oC
TC = 125oC
TC = 25oC
TC = 125oC
TC = 25oC
TC = 125oC
VGS = 12V, ID = 8A
ID = 5A,
VGS = 12V
TC = 25oC
TC = 125oC
VDD = 100V, ID = 8A,
RL = 12.5Ω, VGS = 12V,
RGS = 7.5Ω
tf
Total Gate Charge
Qg(12)
Gate Charge Source
VGS = 0V to 12V
Qgs
VDD = 100V,
ID = 8A
MIN
TYP
MAX
UNITS
200
-
-
V
-
-
5.5
V
2.0
-
4.5
V
1.0
-
-
V
-
-
25
µA
-
-
250
µA
-
-
100
nA
-
-
200
nA
-
-
1.48
V
-
0.145
0.180
Ω
-
-
0.324
Ω
-
-
20
ns
-
-
40
ns
-
-
35
ns
-
-
15
ns
-
26
28
nC
-
10
12
nC
Gate Charge Drain
Qgd
-
8
10
nC
Gate Charge at 20V
Qg(20)
VGS = 0V to 20V
-
40
-
nC
Qg(TH)
VGS = 0V to 2V
-
3
-
nC
ID = 8A, VDS = 15V
-
7
-
V
Threshold Gate Charge
Plateau Voltage
V(PLATEAU)
-
1300
-
pF
-
230
-
pF
CRSS
-
8
-
pF
RθJC
-
-
5.0
oC/W
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
2
VDS = 25V, VGS = 0V,
f = 1MHz
FSGL230R
Source to Drain Diode Specifications
PARAMETER
SYMBOL
Forward Voltage
VSD
Reverse Recovery Time
trr
Reverse Recovery Charge
TEST CONDITIONS
MIN
TYP
MAX
UNITS
ISD = 8A
-
-
1.5
V
ISD = 8A, dISD/dt = 100A/µs
-
-
210
ns
-
1.2
-
µC
QRR
Electrical Specifications up to 100K RAD
TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
Drain to Source Breakdown Volts
(Note 3)
BVDSS
VGS = 0, ID = 1mA
200
-
V
Gate to Source Threshold Volts
(Note 3)
VGS(TH)
VGS = VDS, ID = 1mA
2.0
4.5
V
Gate to Body Leakage
(Notes 2, 3)
IGSS
VGS = ±30V, VDS = 0V
-
100
nA
Zero Gate Leakage
(Note 3)
IDSS
VGS = 0, VDS = 160V
-
25
µA
Drain to Source On-State Volts
(Notes 1, 3)
VDS(ON)
VGS = 12V, ID = 8A
-
1.48
V
Drain to Source On Resistance
(Notes 1, 3)
rDS(ON)12
VGS = 12V, ID = 5A
-
0.180
Ω
NOTES:
1. Pulse test, 300µs Max.
2. Absolute value.
3. Insitu Gamma bias must be sampled for both VGS = 12V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS .
Single Event Effects (SEB, SEGR)
Note 4
ENVIRONMENT (NOTE 5)
TYPICAL LET
(MeV/mg/cm)
TYPICAL
RANGE (µ)
APPLIED
VGS BIAS
(V)
(NOTE 6)
MAXIMUM
VDS BIAS (V)
TEST
SYMBOL
ION
SPECIES
Single Event Effects Safe Operating Area
SEESOA
Br
37
36
-20
200
I
60
32
-10
200
Au
82
28
-5
160
Au
82
28
-10
120
NOTES:
4. Testing conducted at Brookhaven National Labs.
5. Fluence = 1E5 ions/cm2 (Typical), T = 25oC.
6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).
Performance Curves
Unless Otherwise Specified
LET = 37MeV/mg/cm2, RANGE = 36µ
LET = 60MeV/mg/cm2, RANGE = 32µ
LET = 82MeV/mg/cm2, RANGE = 28µ
240
LET = 37 BROMINE
FLUENCE = 1E5 IONS/cm2 (TYPICAL)
200
200
160
VDS (V)
VDS (V)
160
120
120
80
80
40
40
LET = 82 GOLD
LET = 60 IODINE
TEMP = 25oC
0
0
-5
0
-10
-15
-20
-25
VGS (V)
FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA
3
0
-5
-10
-15
-20
-25
-30
-35
VGS (V)
FIGURE 2. TYPICAL SEE SIGNATURE CURVE
-40
FSGL230R
Performance Curves
Unless Otherwise Specified
(Continued)
10
1E-3
1E-4
ILM = 10A
ID , DRAIN (A)
LIMITING INDUCTANCE (H)
8
30A
1E-5
100A
6
4
300A
1E-6
2
1E-7
10
30
100
300
0
-50
1000
0
FIGURE 3. TYPICAL DRAIN INDUCTANCE REQUIRED TO
LIMIT GAMMA DOT CURRENT TO IAS
ID , DRAIN CURRENT (A)
100
150
100
FIGURE 4. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE
TC = 25oC
10
12V
QG
100µs
1ms
QGS
1
0.1
1
10
100
QGD
VG
10ms
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(ON)
1000
VDS , DRAIN TO SOURCE VOLTAGE (V)
CHARGE
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
FIGURE 6. BASIC GATE CHARGE WAVEFORM
2.5
50
ID , DRAIN TO SOURCE CURRENT (A)
PULSE DURATION = 250ms, VGS = 12V, ID = 5A
NORMALIZED rDS(ON)
50
TC , CASE TEMPERATURE (oC)
DRAIN SUPPLY (V)
2.0
1.5
1.0
0.5
0.0
-80
-40
0
40
80
120
160
TJ , JUNCTION TEMPERATURE (oC)
FIGURE 7. TYPICAL NORMALIZED rDS(ON) vs JUNCTION
TEMPERATURE
4
VGS = 14V
VGS = 12V
VGS = 10V
VGS = 8V
VGS = 6V
40
30
20
10
VGS = 6V
0
0
2
4
6
8
VDS , DRAIN TO SOURCE VOLTAGE (V)
FIGURE 8. TYPICAL OUTPUT CHARACTERISTICS
10
FSGL230R
NORMALIZED THERMAL RESPONSE (ZθJC)
Performance Curves
Unless Otherwise Specified
(Continued)
10
1
0.5
0.1
0.2
0.1
0.05
0.02
0.01
0.01
PDM
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC + TC
0.001
10-5
10-4
10-3
10-2
10-1
t1
t2
100
101
t, RECTANGULAR PULSE DURATION (s)
FIGURE 9. NORMALIZED MAXIMUM TRANSIENT THERMAL RESPONSE
IAS , AVALANCHE CURRENT (A)
100
STARTING TJ = 25oC
10
STARTING TJ = 150oC
1
IF R = 0
tAV = (L) (IAS) / (1.3 RATED BVDSS - VDD)
IF R ≠ 0
tAV = (L/R) ln [(IAS*R) / (1.3 RATED BVDSS - VDD) + 1]
0.1
0.01
0.1
1
10
tAV, TIME IN AVALANCHE (ms)
FIGURE 10. UNCLAMPED INDUCTIVE SWITCHING
Test Circuits and Waveforms
ELECTRONIC SWITCH OPENS
WHEN IAS IS REACHED
VDS
L
BVDSS
+
CURRENT I
TRANSFORMER AS
tP
-
VARY tP TO OBTAIN
REQUIRED PEAK IAS
VDD
DUT
tP
VDD
+
50Ω
VGS ≤ 20V
0V
VDS
IAS
50V-150V
50Ω
tAV
FIGURE 11. UNCLAMPED ENERGY TEST CIRCUIT
5
FIGURE 12. UNCLAMPED ENERGY WAVEFORMS
FSGL230R
Test Circuits and Waveforms
(Continued)
tON
VDD
tOFF
td(ON)
td(OFF)
tr
RL
VDS
tf
90%
90%
VDS
VGS = 12V
10%
DUT
10%
0V
90%
RGS
50%
VGS
50%
PULSE WIDTH
10%
FIGURE 13. RESISTIVE SWITCHING TEST CIRCUIT
FIGURE 14. RESISTIVE SWITCHING WAVEFORMS
Screening Information
Screening is performed in accordance with the latest revision in effect of MIL-PRF-19500, (Screening Information Table).
Delta Tests and Limits (JANTXV Equivalent, JANS Equivalent) TC = 25oC, Unless Otherwise Specified
PARAMETER
Gate to Source Leakage Current
Zero Gate Voltage Drain Current
Drain to Source On Resistance
Gate Threshold Voltage
NOTES:
SYMBOL
IGSS
IDSS
rDS(ON)
VGS(TH)
TEST CONDITIONS
VGS = ±30V
VDS = 80% Rated Value
TC = 25oC at Rated ID
ID = 1.0mA
MAX
±20 (Note 7)
±25 (Note 7)
±20% (Note 8)
±20% (Note 8)
UNITS
nA
µA
Ω
V
7. Or 100% of Initial Reading (whichever is greater).
8. Of Initial Reading.
Screening Information
TEST
Unclamped Inductive Switching
Thermal Response
Gate Stress
Pind
Pre Burn-In Tests (Note 9)
JANTXV EQUIVALENT
VGS(PEAK) = 20V, L = 0.1mH; Limit = 29A
tH = 10ms; VH = 25V; IH = 1A; LIMIT = 60mV
VGS = 45V, t = 250µs
Optional
MIL-PRF-19500 Group A,
Subgroup 2 (All Static Tests at 25oC)
MIL-PRF-750, Method 1042, Condition B
VGS = 80% of Rated Value,
TA = 150oC, Time = 48 hours
All Delta Parameters Listed in the Delta Tests
and Limits Table
MIL-PRF-750, Method 1042, Condition A
VDS = 80% of Rated Value,
TA = 150oC, Time = 160 hours
10%
MIL-PRF-19500, Group A, Subgroup 2
Steady State Gate
Bias (Gate Stress)
Interim Electrical Tests (Note 9)
Steady State Reverse
Bias (Drain Stress)
PDA
Final Electrical Tests (Note 9)
JANS EQUIVALENT
VGS(PEAK) = 20V, L = 0.1mH; Limit = 29A
tH = 10ms; VH = 25V; IH = 1A; LIMIT = 60mV
VGS = 45V, t = 250µs
Required
MIL-PRF-19500 Group A,
Subgroup 2 (All Static Tests at 25oC)
MIL-PRF-750, Method 1042, Condition B
VGS = 80% of Rated Value,
TA = 150oC, Time = 48 hours
All Delta Parameters Listed in the Delta Tests
and Limits Table
MIL-PRF-750, Method 1042, Condition A
VDS = 80% of Rated Value,
TA = 150oC, Time = 240 hours
5%
MIL-PRF-19500, Group A,
Subgroups 2 and 3
NOTE:
9. Test limits are identical pre and post burn-in.
Additional Tests
PARAMETER
Safe Operating Area
Thermal Impedance
SYMBOL
SOA
∆VSD
6
TEST CONDITIONS
VDS = 160V, t = 10ms
tH = 500ms; VH = 25V; IH = 1A
MAX
0.5
230
UNITS
A
mV
FSGL230R
Rad Hard Data Packages - Intersil Power Transistors
TXV Equivalent
Class S - Equivalents
1. RAD HARD TXV EQUIVALENT - STANDARD DATA
PACKAGE
1. RAD HARD “S” EQUIVALENT - STANDARD DATA
PACKAGE
A. Certificate of Compliance
A. Certificate of Compliance
B. Assembly Flow Chart
B. Serialization Records
C. Preconditioning - Attributes Data Sheet
C. Assembly Flow Chart
D. Group A
- Attributes Data Sheet
D. SEM Photos and Report
E. Group B
- Attributes Data Sheet
F. Group C
- Attributes Data Sheet
G. Group D
- Attributes Data Sheet
E. Preconditioning - Attributes Data Sheet
- HTRB - Hi Temp Gate Stress Post
Reverse Bias Data and Delta Data
- HTRB - Hi Temp Drain Stress Post
Reverse Bias Delta Data
2. RAD HARD TXV EQUIVALENT - OPTIONAL DATA
PACKAGE
A. Certificate of Compliance
B. Assembly Flow Chart
C. Preconditioning - Attributes Data Sheet
- Pre and Post Burn-In Read and Record
Data
D. Group A
- Attributes Data Sheet
E. Group B
- Attributes Data Sheet
- Pre and Post Read and Record Data for
Intermittent Operating Life (Subgroup B3)
- Bond Strength Data (Subgroup B3)
- Pre and Post High Temperature Operating
Life Read and Record Data (Subgroup B6)
F. Group C
- Attributes Data Sheet
- Pre and Post Read and Record Data for
Intermittent Operating Life (Subgroup C6)
- Bond Strength Data (Subgroup C6)
G. Group D
- Attributes Data Sheet
- Pre and Post RAD Read and Record Data
F. Group A
G. Group B
- Attributes Data Sheet
H. Group C
- Attributes Data Sheet
I. Group D
- Attributes Data Sheet
2. RAD HARD MAX. “S” EQUIVALENT - OPTIONAL
DATA PACKAGE
A. Certificate of Compliance
B. Serialization Records
C. Assembly Flow Chart
D. SEM Photos and Report
E. Preconditioning - Attributes Data Sheet
- HTRB - Hi Temp Gate Stress Post
Reverse Bias Data and Delta Data
- HTRB - Hi Temp Drain Stress Post
Reverse Bias Delta Data
- X-Ray and X-Ray Report
F. Group A
- Attributes Data Sheet
- Subgroups A2, A3, A4, A5 and A7 Data
G. Group B
- Attributes Data Sheet
- Subgroups B1, B3, B4, B5 and B6 Data
H. Group C
- Attributes Data Sheet
- Subgroups C1, C2, C3 and C6 Data
I. Group D
7
- Attributes Data Sheet
- Attributes Data Sheet
- Pre and Post Radiation Data
FSGL230R
TO-205AF
3 LEAD JEDEC TO-205AF HERMETIC METAL CAN PACKAGE
INCHES
ØD
ØD1
SYMBOL
P
A
SEATING
PLANE
h
L
Øb
e
e1
2
e2
1
90o
3
45o
j
k
MIN
MILLIMETERS
MAX
MIN
MAX
NOTES
A
0.160
0.180
4.07
4.57
-
Øb
0.016
0.021
0.41
0.53
2, 3
ØD
0.350
0.370
8.89
9.39
-
ØD1
0.315
0.335
8.01
8.50
-
e
0.095
0.105
2.42
2.66
4
e1
0.190
0.210
4.83
5.33
4
e2
0.095
0.105
2.42
2.66
4
h
0.010
0.020
0.26
0.50
-
j
0.028
0.034
0.72
0.86
-
k
0.029
0.045
0.74
1.14
-
L
0.500
0.560
12.70
14.22
3
P
0.075
-
1.91
-
5
NOTES:
1. These dimensions are within allowable dimensions of Rev. E of
JEDEC TO-205AF outline dated 11-82.
2. Lead dimension (without solder).
3. Solder coating may vary along lead length, add typically 0.002
inches (0.05mm) for solder coating.
4. Position of lead to be measured 0.100 inches (2.54mm) from bottom
of seating plane.
5. This zone controlled for automatic handling. The variation in
actual diameter within this zone shall not exceed 0.010 inches
(0.254mm).
6. Lead no. 3 butt welded to stem base.
7. Controlling dimension: Inch.
8. Revision 3 dated 6-94.
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site www.intersil.com
Sales Office Headquarters
NORTH AMERICA
Intersil Corporation
P. O. Box 883, Mail Stop 53-204
Melbourne, FL 32902
TEL: (321) 724-7000
FAX: (321) 724-7240
EUROPE
Intersil SA
Mercure Center
100, Rue de la Fusee
1130 Brussels, Belgium
TEL: (32) 2.724.2111
FAX: (32) 2.724.22.05
8
ASIA
Intersil (Taiwan) Ltd.
7F-6, No. 101 Fu Hsing North Road
Taipei, Taiwan
Republic of China
TEL: (886) 2 2716 9310
FAX: (886) 2 2715 3029