PD -2.460A HFA70NK60C HEXFRED Ultrafast, Soft Recovery Diode TM BASE COMMON CATHODE Features Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters 1 ANODE 1 2 COMMON CATHODE 3 ANODE 2 VR = 600V VF(typ.) = 1.2V IF(AV) = 70A Qrr (typ.) = 210nC IRRM (typ.) = 6A trr(typ.) = 30ns di(rec)M/dt (typ.) = 180A/µs Description HEXFRED diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. An extensive characterization of the recovery behavior for different values of current, temperature and di/dt simplifies the calculations of losses in the operating conditions. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for power converters, motors drives and other applications where switching losses are significant portion of the total losses. TM TO-249AA (MODIFIED) Absolute Maximum Ratings (per Leg) Parameter VR I F @ TC = 25°C I F @ TC = 100°C I FSM I AS EAS PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Cathode-to-Anode Voltage Continuous Forward Current Continuous Forward Current Single Pulse Forward Current Maximum Single Pulse Avalanche Current Non-Repetitive Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Max. Units 600 59 29 200 2.0 220 160 63 V A µJ W -55 to +150 °C 300 (0.063 in. (1.6mm) from case) Thermal - Mechanical Characteristics Parameter RθJC Junction-to-Case, Single Leg Conducting Junction-to-Case, Both Legs Conducting RθCS Case-to-Sink, Flat, Greased Surface Wt Weight Mounting Torque See Fig. 12 Note: Limited by junction temperature L = 100µH, duty cycle limited by max TJ 125°C Min. Typ. Max. 0.10 58 (2.0) 0.80 0.40 35 (4.0) 50 (5.7) Units °C/W K/W g (oz) lbfin (Nm) 5/5/97 HFA70NK60C Electrical Characteristics (per Leg) @ TJ = 25°C (unless otherwise specified) Parameter VBR VFM Min. Typ. Max. Units Cathode Anode Breakdown Voltage Max Forward Voltage I RM Max Reverse Leakage Current CT LS Junction Capacitance Series Inductance 600 1.3 1.5 1.2 2.0 0.50 68 9.2 1.5 1.7 1.4 10 2.0 100 V Test Conditions I R = 100µA I F = 35A I F = 70A I F = 35A, TJ = 125°C V R = VR Rated TJ = 125°C, VR = 480V VR = 200V Lead to lead 5mm from V µA mA pF nH See See Fig. Fig. 11 See See Fig. Fig. 22 See See Fig. Fig. 33 package body Dynamic Recovery Characteristics (per Leg) @ TJ = 25°C (unless otherwise specified) Parameter trr trr1 trr2 IRRM1 IRRM2 Qrr1 Qrr2 di(rec)M/dt1 di(rec)M/dt2 Min. Typ. Max. Units Reverse Recovery Time Peak Recovery Current Reverse Recovery Charge Peak Rate of Fall of Recovery Current During tb 50.80 (2.000) REF. 6.60 (0.260) 6.10 (0.240) 30 70 110 ns 115 180 6.0 11 A 9.0 16 210 580 nC 520 1400 280 A/µs 180 4.95 (0.195) DIA. 4.45 (0.175) (7 PLCS.) 25.65 (1.010) 25.15 (0.990) 12.70 (0.500) REF. 1 2 3 1.14 (0.045) 0.76 (0.030) 8.05 (0.317) 7.80 (0.307) 8.64 (0.340) REF. (3 PLCS.) Test Conditions IF = 1.0A, dif /dt = 200A/µs, VR = 30V TJ = 25°C See See Fig. Fig. TJ = 125°C I F = 35A 55 TJ = 25°C See Fig. TJ = 125°C 66 VR = 200V TJ = 25°C See Fig. TJ = 125°C 77 dif/dt = 200A/µs TJ = 25°C See See Fig. Fig. TJ = 125°C 88 LEAD ASSIGNMENTS 1 - ANODE 2 - CATHODE 3 - ANODE BASE COMMON CATHODE 13.21 (0.520) 12.70 (0.500) 11.43 (0.450) REF. 22.86 (0.900) REF. Conforms to JEDEC Outline TO - 249AA (Modified) Dimensions in millimeters and inches 1.14 (0.045) 0.89 (0.035) 6.60 (0.260) 6.10 (0.240) 38.35 (1.510) 37.85 (1.490) 1.27 (0.050) REF. 61.21 (2.410) 60.71 (2.390) 10.16 (0.400) 8.38 (0.330) 3.30 (0.130) 3.05 (0.120) HFA70NK60C 10000 Reverse Current - I R (µA) 100 TJ = 150°C 1000 100 TJ = 125°C 10 1 0.1 TJ = 25°C 0.01 TJ = 150°C 0 200 400 600 Reverse Voltage - VR (V) TJ = 125°C Fig. 2 - Typical Reverse Current vs. Reverse Voltage, (per Leg) TJ = 25°C 10 Junction Capacitance - C T (pF) Instantaneous Forward Current - I F (A) 1000 1000 A TJ = 25°C 100 1 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 Forward Voltage Drop - V FM (V) Fig. 1 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current, (per Leg) 10 1 10 100 1000 Reverse Voltage - VR (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage, (per Leg) Thermal Impedance - Z thJC (K/W) 1 D = 0.50 D = 0.33 D = 0.25 P DM D = 0.17 t 0.1 D = 0.08 1 t2 Notes: 1. Duty factor D = t / t 1 2 Single Pulse (Thermal Resistance) 2. Peak TJ = PDM x Z thJC + TC 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 t 1 , Rectangular Pulse Duration (Seconds) Fig. 4 - Maximum Thermal Impedance Zthjc Characteristics, (per Leg) 100 HFA70NK60C 40 150 VR = 200V TJ = 125°C TJ = 25°C VR = 200V TJ = 125°C TJ = 25°C 30 t rr - (ns) t rr - (ns) 120 I F = 70A I F = 35A 90 I F = 15A I F = 70A 20 IF = 35A I F = 15A 10 60 30 100 di f /dt - (A/µs) 0 100 1000 Fig. 5 - Typical Reverse Recovery vs. dif/dt, (per Leg) di f /dt - (A/µs) 1000 Fig. 6 - Typical Recovery Current vs. dif/dt, (per Leg) 1600 10000 VR = 200V TJ = 125°C TJ = 25°C VR = 200V TJ = 125°C TJ = 25°C di(rec)M/dt - (A/µs) 1200 Q RR - (nC) IF = 70A I F = 35A 800 IF = 15A I F = 15A 1000 I F = 35A I F = 70A 100 400 0 100 di f /dt - (A/µs) 1000 Fig. 7 - Typical Stored Charge vs. di f/dt, (per Leg) 10 100 di f /dt - (A/µs) Fig. 8 - Typical di (rec)M/dt vs. dif/dt, (per Leg) 1000 HFA70NK60C 3 t rr IF tb ta 0 REVERSE RECOVERY CIRCUIT VR = 200V Q rr 2 I RRM 4 0.5 I RRM di(rec)M/dt 5 0.01 Ω 0.75 I RRM L = 70µH 1 D.U.T. dif/dt ADJUST G D IRFP250 4. Qrr - Area under curve defined by trr and IRRM trr X IRRM Qrr = 2 2. IRRM - Peak reverse recovery current 3. trr - Reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current S Fig. 9 - Reverse Recovery Parameter Test Circuit L = 100µH 5. di(rec)M/dt - Peak rate of change of current during tb portion of trr Fig. 10 - Reverse Recovery Waveform and Definitions I L(PK) HIGH-SPEED SWITCH DUT Rg = 25 ohm CURRENT MONITOR di f /dt 1. dif/dt - Rate of change of current through zero crossing FREE-WHEEL DIODE + DECAY TIME Vd = 50V V (AVAL) V R(RATED) Fig. 11 - Avalanche Test Circuit and Waveforms WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 5/97