PD-2.508 rev. A 12/98 HFA120MD40D HEXFRED Ultrafast, Soft Recovery Diode TM Features Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters Anode 1 AC Cathode 2 Isolated Base VR = 400V VF(typ.) = 0.9V IF(AV) = 120A Qrr (typ.) = 420nC IRRM(typ.) = 9.3A trr(typ.) = 36ns di(rec)M/dt (typ.) = 260A/µs Description HEXFRED diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. An extensive characterization of the recovery behavior for different values of current, temperature and di/dt simplifies the calculations of losses in the operating conditions. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for power converters, motors drives and other applications where switching losses are significant portion of the total losses. TM TO-244AB (ISOLATED) Absolute Maximum Ratings (per Leg) Parameter VR IF @ TC = 25°C IF @ TC = 100°C IFSM EAS PD @ T C = 25°C PD @ TC = 100°C TJ TSTG Cathode-to-Anode Voltage Continuous Forward Current Continuous Forward Current Single Pulse Forward Current Non-Repetitive Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Max. Units 400 111 53 600 1.4 179 71 V A mJ W -55 to +150 C Thermal - Mechanical Characteristics Parameter RthJC RthCS Wt Junction-to-Case, Single Leg Conducting Junction-to-Case, Both Legs Conducting Case-to-Sink, Flat , Greased Surface Weight Mounting Torque Terminal Torque Vertical Pull 2 inch Lever Pull Note: Limited by junction temperature L = 100µH, duty cycle limited by max TJ 125°C Min. Typ. Max. 30 (3.4) 30 (3.4) 0.10 79 (2.8) 0.70 0.35 40 (4.6) 40 (4.6) 80 35 Units °C/W K/W g (oz) lbfin (Nm) lbfin Mounting surface must be smooth, flat, free or burrs or other protrusions. Apply a thin even film or thermal grease to mounting surface. Gradually tighten each mounting bolt in 5-10 lbfin steps until desired or maximum torque limits are reached. Module 1 HFA120MD40D PD-2.508 rev. A 12/98 Electrical Characteristics (per Leg) @ TJ = 25°C (unless otherwise specified) Parameter V BR V FM Min. Typ. Max. Units Cathode Anode Breakdown Voltage Max Forward Voltage IRM Max Reverse Leakage Current CT Junction Capacitance 400 LS Series Inductance 1.0 1.2 1.2 1.4 0.90 1.1 1.0 6.0 1.5 8.0 180 260 µA mA pF 7.0 nH V V Test Conditions I R = 100µA I F = 60A See Fig. 1 I F = 120A I F = 60A, TJ = 125°C VR = VR Rated See Fig. 2 TJ = 125°C, VR = 320V See Fig. 3 VR = 200V From top of terminal hole to mounting plane Dynamic Recovery Characteristics (per Leg) @ TJ = 25°C (unless otherwise specified) Parameter trr trr1 trr2 IRRM1 IRRM2 Qrr1 Qrr2 di(rec)M/dt1 di(rec)M/dt2 Min. Typ. Max. Units Reverse Recovery Time Peak Recovery Current Reverse Recovery Charge Peak Rate of Fall of Recovery Current During tb Test Conditions 36 IF = 1.0A, dif/dt = 200A/µs, VR = 30V 90 140 ns TJ = 25°C See 160 240 TJ = 125°C Fig. 5 IF = 80A 9.3 17 TJ = 25°C See A 15 30 TJ = 125°C Fig. 6 VR = 200V 420 1100 TJ = 25°C See nC 1200 3200 TJ = 125°C Fig. 7 dif/dt = 200A/µs 360 TJ = 25°C See A/µs 260 TJ = 125°C Fig. 8 80.01 (3.150) 40.26 (1.585) 39.75 (1.565) 20.32 (0.800) 17.78 (0.700) 7.49 (0.295) 6.99 (0.275) DIA. (2 PLCS.) LEAD ASSIGNMENTS 1 - ANODE 2 - CATHODE 3 - ANODE 34.925 (1.375) REF. 1 63.50 (2.500) 60.96 (2.400) 2 1/4-20 SLOTTED HEX OUTLINE TO-244AB (ISOLATED) 3 Dimensions in Millimeters and (Inches) 23.55 (0.927) 20.42 (0.804) 15.75 (0.620) 14.99 (0.590) 92.71 (3.650) 90.17 (3.550) 2 3.35 (0.132) 3.02 (0.119) HFA120MD40D PD-2.508 rev. A 12/98 Reverse Current - IR (µA) 10000 TJ = 150°C 100 TJ = 125°C TJ = 150°C 1000 TJ = 125°C 100 10 1 TJ = 25°C TJ = 25°C 0.1 0 100 200 300 400 Reverse Voltage - VR (V) Fig. 2 - Typical Reverse Current vs. Reverse Voltage, (per Leg) 10 Junction Capacitance - C T (pF) Instantaneous Forward Current - IF (A) 1000 10000 A TJ = 25°C 1000 1 0.4 0.8 1.2 1.6 2.0 Forward Voltage Drop - V FM (V) Fig. 1 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current, (per Leg) 100 1 10 100 1000 Reverse Voltage - VR (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage, (per Leg) Thermal Impedance - Z thJC (K/W) 1 0.1 D = 0.50 D = 0.33 D = 0.25 D = 0.17 PDM D = 0.08 t1 t2 0.01 0.001 0.00001 Single Pulse (Thermal Resistance) Notes: 1. Duty factor D = t / t 1 2 2. Peak TJ = PDM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 10 100 t 1, Rectangular Pulse Duration (Seconds) Fig. 4 - Maximum Thermal Impedance Zthjc Characteristics, (per Leg) 3 HFA120MD40D PD-2.508 rev. A 12/98 100 240 VR = 200V TJ = 125°C TJ = 25°C VR = 200V TJ = 125°C TJ = 25°C IF = 200A I IRRM - (A) t rr - (ns) 200 160 I F = 200A I F = 80A 120 IF = 80A I F = 40A 10 I F = 40A 80 40 100 di f /dt - (A/µs) 1 100 1000 di f /dt - (A/µs) 1000 Fig. 6 - Typical Recovery Current vs. dif/dt, (per Leg) Fig. 5 - Typical Reverse Recovery vs. dif/dt, (per Leg) 10000 5000 VR = 200V TJ = 125°C TJ = 25°C VR = 200V TJ = 125°C TJ = 25°C 3000 di(rec)M/dt - (A/µs) Q RR - (nC) 4000 IF = 200A I F = 80A 2000 IF = 40A I F = 40A 1000 I F = 80A IF = 200A 1000 0 100 di f /dt - (A/µs) 1000 Fig. 7 - Typical Stored Charge vs. di f/dt, (per Leg) 4 100 100 di f /dt - (A/µs) Fig. 8 - Typical di(rec)M/dt vs. dif/dt, (per Leg) 1000 HFA120MD40D PD-2.508 rev. A 12/98 3 t rr IF tb ta 0 REVERSE RECOVERY CIRCUIT VR = 200V Q rr 2 I RRM 4 0.5 I RRM di(rec)M/dt 5 0.01 Ω 0.75 I RRM L = 70µH 1 D.U.T. D dif/dt ADJUST G di f /dt 1. dif/dt - Rate of change of current through zero crossing IRFP250 4. Qrr - Area under curve defined by trr and IRRM trr X IRRM Qrr = 2 2. IRRM - Peak reverse recovery current 3. trr - Reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current S Fig. 9 - Reverse Recovery Parameter Test Circuit L = 100µH 5. di(rec)M/dt - Peak rate of change of current during tb portion of trr Fig. 10 - Reverse Recovery Waveform and Definitions I L(PK) HIGH-SPEED SWITCH DUT Rg = 25 ohm CURRENT MONITOR FREE-WHEEL DIODE + DECAY TIME Vd = 50V V (AVAL) V R(RATED) Fig. 11 - Avalanche Test Circuit and Waveforms WORLD HEADQUARTERS: EUROPEAN HEADQUARTERS: IR CANADA: IR GERMANY: IR ITALY: IR FAR EAST: IR SOUTHEAST ASIA: IR TAIWAN: http://www.irf.com 233 Kansas St., El Segundo, California 90245 U.S.A. Tel: (310) 322 3331. Fax: (310) 322 3332. Hurst Green, Oxted, Surrey RH8 9BB, U.K. Tel: ++ 44 1883 732020. Fax: ++ 44 1883 733408. 15 Lincoln Court, Brampton, Markham, Ontario L6T3Z2. Tel: (905) 453 2200. Fax: (905) 475 8801. Saalburgstrasse 157, 61350 Bad Homburg. Tel: ++ 49 6172 96590. Fax: ++ 49 6172 965933. Via Liguria 49, 10071 Borgaro, Torino. Tel: ++ 39 11 4510111. Fax: ++ 39 11 4510220. K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo, Japan 171. Tel: 81 3 3983 0086. 1 Kim Seng Promenade, Great World City West Tower,13-11, Singapore 237994. Tel: ++ 65 838 4630. 16 Fl. Suite D.207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan. Tel: 886 2 2377 9936. Fax-On-Demand: +44 1883 733420 Data and specifications subject to change without notice. 5