ETC HL1328DJS

HL1328DJS
1.3 µm InGaAsP Laser Diode
ADE-208-673B (Z)
Rev.2
Jul. 2001
Description
The HL1328DJS is a 1.3 µm InGaAsP Fabry-Perot laser diode with a multi-quantum well (MQW)
structure. It is suitable as a light source in 155 Mb/s or 622 Mb/s short haul fiberoptic communication
systems and other types of optical equipment. Laser output is delivered from the non-hermetic Mini DIL
package through SC optical connector attached at the end of fiber pigtail. A built-in photodiode provides
monitor current output.
Features
• Wide operating temperature range: Topr = −40 to +85°C
• Optical output power: 0.2 mW
• Plastic Mini DIL package
Fiber Specifications
• Mode field diameter: 9.5 ± 1.0 µm
• Cutoff wavelength: 1.10 to 1.27 µm
• Outer diameter: 125 µm nominal
• Jacket diameter: 900 µm nominal
• Fiber minimum bend radius: 30 mm
Package Type
• HL1328DJS: DJS
Internal Circuit
8
7
6
5
LD
PD
1
2
3
4
HL1328DJS
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Value
Unit
Condition
LD forward current
IF(LD)
Ith + 60
mA
at Ta = −40°C, 25°C
Ith + 100
at Ta = 85°C
LD reverse voltage
VR(LD)
2
V
PD forward current
IF(PD)
5
mA
PD reverse voltage
VR(PD)
20
V
Operating temperature
Topr
−40 to +85
°C
Storage temperature
Tstg
−40 to +85
°C
Optical and Electrical Characteristics
(Ta = −40°C to 85°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Optical output power
Pf
0.2


mW
Kink free
Threshold current
Ith


20
mA
Ta = 25°C


40
Ta = 85°C
Operating voltage
VOP


1.6
V
Pf = 0.2 mW
Slope efficiency
ηs
0.004

0.025
mW/mA
Ta = 25°C
0.004


Ta = 85°C
Lasing wavelength
λc
1260
1310
1360
nm
Pf = 0.2 mW, RMS
Spectral width
σ


2.5
nm
Pf = 0.2 mW, RMS
Rise time
tr


0.5
ns
Pf = 0.2 mW, Ib = Ith, 10 to 90 %
Fall time
tf


0.5
ns
Pf = 0.2 mW, Ib = Ith, 90 to 10 %
Monitor current
IS
200


µA
Pf = 0.2 mW, VR(PD) = 5 V
Ta = 25°C
Temp dependency of
tracking error relative
to 25°C
∆Pf
−1

1
dB
IS = const. (Pf = 0.2 mW,
Ta = 25°C, VR(PD) = 5 V)
PD dark current
I(DARK)


500
nA
VR(PD) = 5 V
Rev.2, Jul. 2001, page 2 of 7
HL1328DJS
Oputical Output Power vs. Forword Current
0.3
Ta = –40°C
Ta = 25°C
0.25
Ta = 85°C
0.2
0.15
0.1
0.05
0
0
40
60
20
80
Forward current, IF (mA)
Optical output power, Pf (mW)
Optical output power, Pf (mW)
Typical Characteristic Curves
0.15
0.1
0.05
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
Monitor current, IS (mA)
Threshold Current vs. Ambient Temperature
100
Threshold Current, Ith (mA)
Slope efficiency, ηs (mW/mA)
Slope Efficiency vs. Ambient Temperature
0.1
0.001
–60 –40 –20 0 20 40 60 80 100
Ambient temperature, Ta (°C)
0.2
0
100
0.01
Oputical Output Power vs. Monitor Current
0.3
VR(PD) = 5 V
Ta = 25°C
0.25
10
1
–60 –40 –20 0 20 40 60 80 100
Ambient temperature, Ta (°C)
Rev.2, Jul. 2001, page 3 of 7
HL1328DJS
Dark current, IDARK (A)
Photodiode Dark Current vs. Reverese Voltage
1E−7
Ta = 25°C
1E−8
1E−9
1E−10
0
1
10
Reverese voltage, VR(PD) (V)
100
Pulse Response of Laser Diode
Relative intensity
Current pulse
Ta = 25°C
IB = Ith
is = 20 mAp-p
Optical pulse
500 ps/div
Rev.2, Jul. 2001, page 4 of 7
Photodiode capacitance, Ct (pF)
Typical Characteristic Curves (cont)
Photodiode Capacitance vs. Reverese Voltage
100
f = 1 MHz
Ta = 25°C
10
1
0.1
0.1
1
10
Reverese voltage, VR(PD) (V)
100
HL1328DJS
Package Dimensions
Unit: mm
(8.15)
(13.0)
8
1
600 min
FIBER LENGTH TO END OF
"SC" CONNECTOR FERRULE
3.0 (3.3)
7.62
(spacing between pin rows)
2.54
0.48
7.62
0.25
Hitachi Code
JEDEC
EIAJ
Mass (reference value)
LD/DJS
—
—
—
Rev.2, Jul. 2001, page 5 of 7
HL1328DJS
Disclaimer
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
1. The laser light is harmful to human body especially to eye no matter what directly or indirectly. The
laser beam shall be observed or adjusted through infrared camera or equivalent.
Rev.2, Jul. 2001, page 6 of 7
HL1328DJS
Sales Offices
Hitachi, Ltd.
Semiconductor & Integrated Circuits
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: (03) 3270-2111 Fax: (03) 3270-5109
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Copyright © Hitachi, Ltd., 2001. All rights reserved. Printed in Japan.
Colophon 4.0
Rev.2, Jul. 2001, page 7 of 7