HL6501MG Visible High Power Laser Diode for DVD-RAM ADE-208-515H (Z) 9th Edition Dec. 2000 Description The HL6501MG is a 0.65 µm band AlGaInP laser diode (LD) with a multi-quantum well (MQW) structure. It is suitable as a light source for large capacity optical disc memories, such as DVD-RAM, and various other types of optical equipment. Hermetic sealing of the small package (φ5.6 mm) assures high reliability. Application • Optical disc memories • Optical equipment Features • • • • High output power: 35 mW (CW) Visible light output: λp = 658 nm Typ Small package: φ 5.6 mm Low astigmatism: 6 µm Typ (PO = 5 mW) Package Type • HL6501MG: MG Internal Circuit 1 3 PD LD 2 HL6501MG Absolute Maximum Ratings (TC = 25°C) Item Symbol Rated Value Unit Optical output power PO 35 mW Pulse optical output power PO(pulse) 50 * mW LD reverse voltage VR(LD) 2 V PD reverse voltage VR(PD) 30 V Operating temperature Topr –10 to +60 °C Storage temperature Tstg –40 to +85 °C Note: Pulse condition : Pulse width = 100 ns , duty = 50% Optical and Electrical Characteristics (TC = 25°C) Item Symbol Min Typ Max Unit Test Conditions Optical output power PO 35 — — mW Kink free * Optical output power PO(pulse) 50 — — mW Kink free * Threshold current Ith 30 45 70 mA — Operating voltage VOP 2.1 2.6 3.0 V PO = 30 mW Slope efficiency ηs 0.5 0.75 1.0 mW/mA 18 (mW) / (I(24mW) – I (6mW)) Beam divergence parallel to the junction θ// 7 8.5 10.5 deg. PO = 30 mW Beam divergence parpendicular to the junction θ⊥ 18 22 26 deg. PO = 30 mW Astigmatism AS — 6 — µm PO = 5 mW, NA = 0.55 Lasing wavelength λp 645 658 665 nm PO = 30 mW Monitor current IS 0.05 0.3 1.5 mA PO = 30 mW, VR(PD) = 5 V Note: Kink free is confirmed at the temperature of 25°C. 2 HL6501MG Typical Characteristic Curves TC = 25°C 40 TC = 0°C Monitor current, IS (mA) Optical output power, PO (mW) Optical Output Power vs. Forward Current 50 TC = 60°C 30 20 10 0 40 0 80 120 160 Monitor Current vs. Optical Output Power 0.5 VR(PD) = 5 V TC = 25°C 0.4 0.3 0.2 0.1 0 200 0 Threshold Current vs. Case Temperature 100 10 20 30 40 50 60 Case temperature, TC (°C) 30 40 50 Slope Efficiency vs. Case Temperature 1.0 Slope efficiency, ηS (mW/mA) Threshold current, Ith (mA) 0 20 Optical output power, PO (mW) Forward current, IF (mA) 10 10 70 80 0.8 0.6 0.4 0.2 0 0 10 20 30 40 50 60 70 80 Case temperature, TC (°C) 3 HL6501MG Typical Characteristic Curves (cont) Lasing Wavelength vs. Case Temperature Monitor Current vs. Case Temperature 675 PO = 30 mW Lasing wavelength, λp (nm) PO = 30 mW VR(PD) = 5 V 0.8 0.6 0.4 0.2 0 670 665 660 655 650 0 10 20 40 50 60 0 10 20 30 40 50 60 70 80 Case temperature, TC (°C) Case temperature, TC (°C) Lasing Spectrum Polarization Ratio vs. Optical Output Power 1200 TC = 25°C 1000 NA = 0.55 TC = 25°C Relative intensity 30 PO = 30 mW Polarization ratio Monitor current, IS (mA) 1.0 PO = 20 mW PO = 10 mW 800 600 400 200 PO = 5 mW 0 650 655 Lasing wavelength, λp (nm) 4 660 0 10 20 30 40 Optical output power, PO (mW) 50 HL6501MG Typical Characteristic Curves (cont) Astigmatism vs. Optical Output Power Far Field Pattern 10 1.0 TC = 25°C NA = 0.55 0.8 Intensity Perpendicular 0.6 0.4 Parallel 0.2 0 −40 −30 −20 −10 0 Astigmatism, AS (µm) PO = 30 mW TC = 25°C 8 6 4 2 0 10 20 30 40 0 Angle, θ (deg.) 10 20 30 40 50 Optical output power, PO (mW) Electrostatic Destruction(MIL standard) Frequency Response 100 3dB/div P = 3 mW O LD Forward N = 5pcs ∆Iop ≤ 10% judgment Gain (dB) Survival rate (%) 80 60 40 20 1M 10M 100M Frequency (Hz) 1G 3G 0 0 1 2 Applied voltage (kV) 3 5 HL6501MG Package Dimensions Unit: mm 0.4 +0.1 –0 φ 5.6 +0 –0.025 1.0 ± 0.1 (90°) (0.4) 0.25 φ 4.1 ± 0.3 φ 3.55 ± 0.1 Glass 2.3 ± 0.2 φ 1.6 ± 0.2 1.27 6.5 ± 1.0 1.2 ± 0.1 Emitting Point 3 – φ 0.45 ± 0.1 1 1 2 3 3 2 φ 2.0 ± 0.2 Hitachi Code JEDEC EIAJ Mass (reference value) 6 LD/MG — — 0.3 g HL6501MG Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. 1. The laser light is harmful to human body especially to eye no matter what directly or indirectly. The laser beam shall be observed or adjusted through infrared camera or equivalent. 7 HL6501MG Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica Europe Asia Japan : : : : http://semiconductor.hitachi.com/ http://www.hitachi-eu.com/hel/ecg http://sicapac.hitachi-asia.com http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic Components Group Dornacher Straβe 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Asia Ltd. Hitachi Tower 16 Collyer Quay #20-00, Singapore 049318 Tel : <65>-538-6533/538-8577 Fax : <65>-538-6933/538-3877 URL : http://www.hitachi.com.sg Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 585160 Hitachi Asia Ltd. (Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road, Hung-Kuo Building, Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon, Hong Kong Tel : <852>-(2)-735-9218 Fax : <852>-(2)-730-0281 URL : http://www.hitachi.com.hk Copyright Hitachi, Ltd., 2000. All rights reserved. Printed in Japan. Colophon 2.0 8