GaAs Schottky Devices Low CT Flip Chip ® TM MS8151 - P2613 Dimensions Size: 26 x 13 mils Thickness: 5 mils Bond Pad Size: 5 x 8 mils Features ● Capacitance (45 fF Typ.) ● Low Series Resistance (7 Typ.) ● Cut-off Frequency > 500 GHz ● Large Gold Bond Pads Description The MS8151-P2613 is a GaAs flip chip Schottky diode designed for use as mixer and detector elements at microwave and millimeter wave frequencies. Their high cut-off frequency insures good performance at frequencies to 100 GHz. Applications include, transceivers, digital radios and automotive radar detectors. Specifications @ 25°C (Per Junction) ● VF (1 mA): 600–800 mV ● RS (10 mA): 9 Max. ● IR (3 V): 10 A Max. ● CT (0 V): 60 fF Max. These flip chip devices incorporate Microsemi’s expertise in GaAs material processing, silicon nitride protective coatings and high temperature metalization. They have large, 5 x 8 mil, bond pads for ease of insertion. The MS8150-P2613 is priced for high volume commercial and industrial applications. Maximum Ratings Insertion Temperature 250°C for 10 Seconds Incident Power +20 dBm @ 25°C Forward Current 15 mA @ 25°C Reverse Voltage 3V Operating Temperature -55°C to +125°C Storage Temperature -65°C to +150°C IMPORTANT: For the most current data, consult our website: www.MICROSEMI.com Specifications are subject to change. Consult factory for the latest information. 1 The MS8151 is supplied with a RoHS complaint Gold finish . These devices are ESD sensitive and must be handled using ESD precautions. Copyright 2008 Rev.: 2009-01-19 Microsemi Microwave Products 75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748 Page 1 GaAs Schottky Devices Low CT Flip Chip ® TM MS8151 - P2613 P2613 DIM C CATHODE J D B INCHES MM MIN. MAX. MIN. MAX. A 0.0255 0.0265 0.6480 0.6730 B 0.0125 0.0135 0.3180 0.3430 C 0.0046 0.0056 0.1170 0.1420 D 0.0075 0.0085 0.1910 0.2160 E 0.0170 0.0180 0.4320 0.4570 F 0.0050 0.0060 0.1270 0.1520 G 0.0045 0.0055 0.1140 0.1400 H 0.0016 0.0020 0.0406 0.0508 J 0.0023 0.0027 0.0584 0.0686 EG VJ BV eV V V A 1.42 0.85 4 1 x 10-5 A G F E H Spice Model Parameters (Per Junction) IS RS A 3.2 x10-13 Copyright 2008 Rev.: 2009-01-19 7 N 1 TT CJ0 CP Sec pF pF 0 0.025 0.02 M 0.50 Microsemi Microwave Products 75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748 IBV Page 2