2SD2540 Silicon NPN Epitaxial Application UPAK Low frequency power amplifier Features • Low saturation voltage VCE(sat) ≤ 0.3 V • Large current capacitance. IC = 5 A 3 2 1 4 1. Base 2. Collector 3. Emitter 4. Collector Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Collector to base voltage VCBO 40 V ——————————————————————————————————————————— Collector to emitter voltage VCEO 20 V ——————————————————————————————————————————— Emitter to base voltage VEBO 7 V ——————————————————————————————————————————— Collector current IC 5 A ——————————————————————————————————————————— Collector peak current ic(peak)* 8 A ——————————————————————————————————————————— Collector power dissipation PC** 1 W ——————————————————————————————————————————— Junction temperature Tj 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 ms, duty cycle ≤ 20 % ** When using the alumina ceramic board (12.5 x 20 x 0.7 mm) Note: Marking is "HS" Attention: This device is very sensitive to electro static discharge. It is recommended to adopt appropriate cautions when handling this transistor. 2SD2540 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Collector to base breakdown voltage V(BR)CBO 40 — — V IC = 10 µA, IE = 0 ——————————————————————————————————————————— Collector to emitter breakdown voltage V(BR)CEO 20 — — V IC = 1 mA, RBE = ∞ ——————————————————————————————————————————— Emitter to base breakdown voltage V(BR)EBO 7 — — V IE = 10 µA IC = 0 ——————————————————————————————————————————— Collector to base cutoff current ICBO — — 0.1 µA VCB = 20 V, IE = 0 ——————————————————————————————————————————— Collector to emitter cutoff current ICEO — — 1 µA VCE = 10 V, RBE = ∞ ——————————————————————————————————————————— Emitter to base cutoff current IEBO — — 0.1 µA VEB = 5 V, IC = 0 ——————————————————————————————————————————— DC current transfer ratio hFE1* 250 — 600 VCE = 2 V, IC = 0.5 A ——————————————————————————————————————————— DC current transfer ratio hFE2* 150 — — VCE = 2 V, IC = 5 A ——————————————————————————————————————————— Collector to emitter saturation voltage VCE(sat)* — 0.21 0.3 V IC =3 A IB = 0.1 A ——————————————————————————————————————————— Base to emitter saturation voltage VBE(sat)* — 0.95 1.2 V IC =2 A IB = 0.2 A ——————————————————————————————————————————— Gain bandwidth product fT — 190 — MHz VCE = 6 V, IC = 50 mA ——————————————————————————————————————————— Collector output capacitance Cob — 30 — pF VCB = 10 V IE = 0 f = 1 MHz ——————————————————————————————————————————— * Pulse Test 2SD2540 20 I C (A) 2 Collector Current 1.0 0.5 0 10 ic (peak) 5 I C (max) 50 100 150 Ambient Temperature Ta (°C) 1 1 ms s 0m =1 1.5 Area of Safe Operation PW Collector Power Dissipation Pc** (W) Maximum Power Dissipation Curve 2.0 D C O pe ra 0.5 tio n 0.2 0.1 0.05 Ta = 25 °C 1 shot pulse 0.02 0.1 0.3 1 3 10 Collector to Emitter Voltage 200 30 100 V CE (V) ** When using the alumina ceramic board (12.5 x 20 x 0.7 mm) Typical Transfer Characteristics Typical Output Characteristics 1.0 2 6 mA 4 mA 1 2 mA Ta = 25 °C 0 I C (A) 3 20 mA 18 mA 16 mA 14 mA 12 mA 10 mA 8 mA 0.8 Collector Current I C (A) 4 Collector Current 5 0.6 V CE = 2 V Pulse Test Ta = 75 °C 0.4 25 °C –25 °C 0.2 IB=0 0.2 0.4 0.6 0.8 1.0 Collector to Emitter Voltage V CE (V) 0 0.2 0.4 0.6 0.8 1.0 Base to Emitter Voltage V BE (V) 2SD2540 Collector to Emitter Saturation Voltage vs. Base Current DC Current Transfer Ratio vs. Collector Current 10 Collector to Emitter Saturation Voltage VCE(sat) (V) DC Current Transfer Ratio hFE 1000 75 °C 500 200 25 °C Ta = –25 °C 100 50 20 VCE = 2 V Pulse test 0.5 Collector Current 1 2 5 2 1 0.5 IC=5A 0.2 2.5 A 0.1 1A 0.05 10 0.01 0.02 0.05 0.1 0.2 Pulse test Ta = 25 °C 5 1 10 0.5 VBE(sat) 0.2 75 °C 75 °C 0.1 25 °C 0.05 Ta = –25 °C 0.02 V CE(sat) 0.01 Pulse test I C = 20 I B 0.005 0.002 0.01 0.02 0.05 0.1 0.2 0.5 1 50 100 200 500 1000 1000 Ta = –25 °C 25 °C 10 20 Gain Bandwidth Product vs. Collector Current 2 Collector Current I C (A) 5 Gain Bandwidth Product f T (MHz) Collector to Emitter Saturation Voltage VCE(sat) (V) Base to Emitter Saturation Voltage VBE(sat) (V) 1 5 Base Current I B (mA) I C (A) Saturation Voltage vs. Collector Current 2 2 500 200 100 50 20 Pulse Test V CE = 6 V Ta = 25°C 10 10 0.01 0.02 0.05 0.1 0.2 0.5 Collector Current I C (A) 1 2SD2540 Collector Output Capacitance Cob (pF) Collector Output Capacitance vs. Collector to Base Voltage 500 IE =0 f = 1 MHz 200 100 50 20 10 1 2 5 10 20 50 Collector to Base Voltage VCB (V) Package Dimensions Unit : mm 4.5 ± 0.1 φ 1.0 0.53 max 0.48 max 1 2 1.5 1.5 3.0 3 0.8 min 4 1.5 ± 0.1 0.44 max 2.5 ± 0.1 4.25 max 0.4 1.8 max 0.44 max Hitachi Code EIAJ JEDEC UPAK SC–62 UPAK