Preliminary PHEMT GaAs IC High Linearity 3 V Control SPDT 0.1–2.5 GHz Switch Chip AS193-000 Features Outline Drawing 0.0196 (0.498 mm) ■ +2.5 to +5 V Linear Operation ■ Harmonics H2, H3 > 65 dBc @ PIN = 34.5 dBm ■ Low Insertion Loss (0.35 dB @ 0.9 GHz) ■ High Isolation (24 dB @ 0.9 GHz) 0.0224 (0.569 mm) 0.0194 (0.493 mm) Description 0.0030 (0.089 mm) 0.0392 (0.996 mm) 0.0361 (0.917 mm) 0.0030 (0.089 mm) 0.0000 0.0000 The AS193-000 is a PHEMT GaAs FET IC high linearity SPDT switch.This switch has been designed for use where extremely high linearity, low control voltage, high isolation and low insertion loss are needed. Some standard implementations include antenna changeover, T/R and diversity switching over 3 W.The AS193-000 switch is ideal for GaAs based antenna switch front-end modules. 0.0080 (0.020 mm) 0.0000 Dimensions in inches (mm). Tolerance ± 0.001 (0.025 mm). Electrical Specifications at 25°C (0, +3 V) Parameter1 Frequency Insertion Loss2 0.1–0.5 0.5–1.0 1.0–2.0 2.0–2.5 GHz GHz GHz GHz Isolation 0.1–0.5 0.5–1.0 1.0–2.0 2.0–2.5 GHz GHz GHz GHz VSWR3 0.1–1.0 GHz 1.0–2.5 GHz Min. 28 22 17 15 Typ. Max. Unit 0.30 0.35 0.45 0.55 0.4 0.5 0.6 0.7 dB dB dB dB 30 24 19 17 dB dB dB dB 1.2:1 1.3:1 dB dB Operating Characteristics at 25°C (0, +3 V) Parameter Switching Characteristics4 Condition Frequency Rise, Fall (10/90% or 90/10% RF) On, Off (50% CTL to 90/10% RF) Video Feedthru Min. Typ. Max. Unit 60 100 50 ns ns mV Input Power for -0.1 dB Compression 0/+3 V 0.9 GHz +37 dBm Harmonics H2, H3 PIN = 34.5 dBm 0.9 GHz +65 dBc Control Voltages VLow = 0 to 0.2 V @ 20 µA Max. VHigh = +2.5 V @ 50 µA Max. to +5 V @ 100 µA Max. 1. All measurements made in a 50 Ω system, unless otherwise specified. 2. Insertion loss changes by 0.003 dB/°C. 3. Insertion loss state. 4. Video feedthru measured with 1 ns risetime pulse and 500 MHz bandwidth. Skyworks Solutions, Inc. [978] 241-7000 • Fax [978] 241-7906 • Email [email protected] • www.skyworksinc.com Specifications subject to change without notice. 1/02A 1 PHEMT GaAs IC High Linearity 3 V Control SPDT 0.1–2.5 GHz Switch Chip AS193-000 0 0 -0.1 -5 -0.2 -10 IL -0.3 Isolation (dB) Insertion Loss (dB) Typical Performance Data -0.4 -0.5 -0.6 -0.7 -25 -30 -35 -40 -0.9 -45 -50 0 0.5 1.0 1.5 2.0 2.5 3.0 0 0.5 1.0 1.5 2.0 2.5 Frequency (GHz) Frequency (GHz) Insertion Loss vs. Frequency Isolation vs. Frequency 2.0 80 1.9 75 1.8 70 1.7 65 H2, H3 (dBc) VSWR (dB) -20 -0.8 -1.0 1.6 1.5 1.4 1.3 3.0 H2 60 H3 55 50 45 1.2 40 1.1 35 30 1.0 0 0.5 1.0 1.5 2.0 2.5 2.0 3.0 2.5 3.0 3.5 5.0 VSWR vs. Frequency Harmonics vs. Control Voltage PIN = 34.5 dBm, 900 MHz, GSM Pulsed Absolute Maximum Ratings V1 V2 0 VHigh J1–J2 J1–J3 VHigh Isolation Insertion Loss 0 Insertion Loss Isolation Characteristic RF Input Power Control Voltage VHigh = +2.5 to +5 V. Pin Out J1 V2 Value 6 W Max. > 900 MHz, 0/+5 V Control -0.2 V, +8 V Operating Temperature -40°C to +85°C Storage Temperature -65°C to +150°C ΘJC J2 4.5 Frequency (GHz) Truth Table V1 4.0 VCTRL (V) Note: Contact factory for S-parameter data. 2 -15 25°C/W Notes: Bond pad metalization: gold. Back side metalization: none. See application note, Handling GaAs MMIC Die. J3 Skyworks Solutions, Inc. [978] 241-7000 • Fax [978] 241-7906 • Email [email protected] • www.skyworksinc.com Specifications subject to change without notice. 1/02A