ADE-208-030B(Z) HSM2836C Silicon Epitaxial Planar Diode for High Speed Switching Rev. 2 Aug. 1995 Features Pin Arrangement • Fast recovery time. • MPAK package is suitable for high density surface mounting and high speed assembly. 3 1 2 (Top View) Ordering Information Type No. Laser Mark Package Code HSM2836C A4 MPAK 1 Cathode 2 Cathode 3 Anode Absolute Maximum Ratings ** (Ta = 25°C) Item Symbol Peak reverse voltage VRM Value Unit Reverse voltage VR 80 V Peak forward current IFM 300 mA 85 V Non-Repetitive peak forward surge current IFSM * Average forward current Io 100 4 mA A Junction temperature Tj 125 °C Storage temperature Tstg -55 to +125 °C * Within 1µs forward surge current. ** Per one device Electrical Characteristics * (Ta = 25°C) Item Symbol Min Typ Max VF1 — 0.72 1.0 Unit Test Condition IF = 10 mA VF2 — 0.83 1.0 VF3 — 0.90 1.2 Reverse current IR — — 0.1 µA VR = 80 V Capacitance C — 2.5 4.0 pF VR = 0 V, f = 1 MHz Reverse recovery time trr — — 20 ns IF= 10mA, VR=6V, RL=50Ω Forward voltage * Per one device V IF = 50 mA IF = 100 mA HSM2836C 10 10 10 -2 Reverse current I R (A) 10 -1 -3 10 Ta= 75 °C Ta= 25 °C Ta= -25 °C Forward current I F (A) 10 -4 -4 -5 10 -6 Ta=75°C 10 -7 Ta=50°C 10 10 -8 Ta=25°C -9 Ta= 0 °C -5 10 -10 10 10 -11 -6 0 0.6 0.8 0.2 0.4 Forward voltage VF (V) 10 1.0 Fig.1 Forward current Vs. Forward voltage 10 1.0 -1 10 1.0 10 Reverse voltage VR (V) Fig.3 Capacitance Vs. Reverse voltage 0 60 80 20 40 Reverse voltage VR (V) Fig.2 Reverse current Vs. Reverse voltage f=1MHz Capacitance C (pF) Ta=-25°C 102 100 HSM2836C Package Dimensions 0.65 – 0.3 + 0.10 0.4 – 0.05 Laser Mark + 0.1 Unit: mm + 0.10 0.16 – 0.06 0.3 2.8 +– 0.1 + 0.2 – 0.6 2.8 2 Cathode 3 Anode HITACHI Code MPAK(1) + 0.2 1.9 1 Cathode 1.1 – 0.1 1 0.95 0.1 0.65 +– 0.3 2 0.95 0 – 0.10 0.3 A 4 1.5 3 JEDEC Code — EIAJ Code SC-59A Weight (g) 0.011