HRF503A Silicon Schottky Barrier Diode for Rectifying ADE-208-401B(Z) Rev 2 Features • Low forward voltage drop and suitable for high effifiency rectifying. • DO-214 is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. Laser Mark Package Code HRF503A 503A DO-214 Outline Cathode mark Mark 503A 1 2 1. Cathode 2. Anode HRF503A Absolute Maximum Ratings (Ta = 25°C) Item Symbol *1 RRM Repetitive peak reverse voltage V Average rectified current I o*1 *2 Value Unit 35 V 5 A 100 A Non-Repetitive peak forward surge current I FSM Junction temperature Tj 125 °C Storage temperature Tstg –40 to +125 °C Notes: 1. See from Fig.4 to Fig.7 2. 10msec half sine wave 1 pulse Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Condition Forward voltage VF1 — 0.38 — V I F = 3A VF2 — — 0.45 Reverse current IR — — 1.0 mA Thermal resistance Rth(j-a) — 75 — °C/W Glass epoxy board Rth(j-c) — 35 — Note: 1. Glass epoxy board Land size 3.5 6.8 2.0 2 Unit: mm I F = 5A VR = 35V Tc = 25°C *1 HRF503A Main Characteristic 10 2 10 -2 Pulse test Pulse test Reverse current I R (A) Forward current I F (A) Ta=75°C 10 Ta=75°C Ta=25°C 1.0 10 -1 10 -3 -4 10 Ta=25°C -5 10 10 10 10 -2 -3 -6 0 0.1 0.2 0.3 0.4 0.5 0.6 10 Forward voltage V F (V) 20 40 10 30 Reverse voltage V R (V) Fig.1 Forward current Vs. Forward voltage Fig.2 Reverse current Vs. Reverse voltage 0 50 3 Capacitance C (pF) f=1MHz Pulse test 2 10 10 1.0 10 Reverse voltage V R (V) 40 Fig.3 Capacitance Vs. Reverse voltage 3 HRF503A Main Characteristic 12 5 D=5/6 Forward power dissipation Pd (W) t 4 D=1/6 t D= ― T T Tj =25°C Sin D=1/3 3 D=1/2 DC 2 1 Reverse power dissipation Pd (W) 0V 0A T 8 D=1/2 6 Sin 4 2 0 0 1 2 3 4 6 5 10 0 Fig.4 Forward p ower dissipation Vs. Forward current 6 20 Fig.5 Reverse power dissipation Vs. Reverse voltage 6 VR=15V Tj =125°C 5 VR=15V Tj =125°C Glass epoxy PCB D=1/3 3 Sin D=1/2 2 Average forward current IO (A) 5 DC D=1/6 1 DC 4 3 2 D=1/3 1 D=1/2 Sin D=1/6 0 -25 0 25 50 75 100 125 Case temperature Tc (°C) Fig.6 Average forward current Vs. Case temperature 4 40 30 Reverse voltage V R(V) Forward current I F (A) Average forward current IO (A) D=2/3 Tj =125°C 0 4 t D= ― T t 10 0 -25 0 25 50 75 100 125 Ambient temperature Ta (°C) Fig.7 Average forward current Vs. Ambient temperature HRF503A Package Dimensions Unit : mm 2 4.0 ± 0.2 503A 1 3.0 ± 0.2 Cathode Mark 7.0 ± 0.2 8.0 ± 0.3 1.2 ± 0.3 2.1 ± 0.2 0.25 1 Cathode 2 Anode Hitachi Code JEDEC Code EIAJ Code Weight (g) DO-214 DO-214 — 0.16 5