ETC 150GAL12DN2

BSM 150 GAL 120 DN2
IGBT Power Module
• Single switch with chopper diode at collector
• Including fast free-wheeling diodes
• Package with insulated metal base plate
Type
VCE
BSM 150 GAL 120 DN2
1200V 210A
IC
Package
Ordering Code
HALF BRIDGE GAL 2 C67076-A2013-A70
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
VCE
Collector-gate voltage
VCGR
RGE = 20 kΩ
Values
Unit
1200
V
1200
Gate-emitter voltage
VGE
DC collector current
IC
± 20
A
TC = 25 °C
210
TC = 80 °C
150
Pulsed collector current, tp = 1 ms
ICpuls
TC = 25 °C
420
TC = 80 °C
300
Power dissipation per IGBT
W
Ptot
TC = 25 °C
1250
Chip temperature
Tj
Storage temperature
Tstg
Thermal resistance, chip case
RthJC
≤ 0.1
Diode thermal resistance, chip case
RthJCD
≤ 0.25
Diode thermal resistance, chip-case,chopper
RTHJCDC
≤ 0.18
Insulation test voltage, t = 1min.
Vis
2500
Vac
Creepage distance
-
20
mm
Clearance
-
11
DIN humidity category, DIN 40 040
-
F
IEC climatic category, DIN IEC 68-1
-
1
+ 150
°C
-40 ... + 125
K/W
sec
40 / 125 / 56
Nov-24-1997
BSM 150 GAL 120 DN2
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
Unit
max.
Static Characteristics
Gate threshold voltage
V
VGE(th)
VGE = VCE, IC = 6 mA
4.5
5.5
6.5
VGE = 15 V, IC = 150 A, Tj = 25 °C
-
2.5
3
VGE = 15 V, IC = 150 A, Tj = 125 °C
-
3.1
3.7
Collector-emitter saturation voltage
Zero gate voltage collector current
VCE(sat)
mA
ICES
VCE = 1200 V, VGE = 0 V, Tj = 25 °C
-
2
2.8
VCE = 1200 V, VGE = 0 V, Tj = 125 °C
-
8
-
Gate-emitter leakage current
nA
IGES
VGE = 20 V, VCE = 0 V
-
-
400
AC Characteristics
Transconductance
VCE = 20 V, IC = 150 A
Input capacitance
62
nF
-
11
-
-
1.6
-
-
0.6
-
Coss
VCE = 25 V, VGE = 0 V, f = 1 MHz
Reverse transfer capacitance
-
Ciss
VCE = 25 V, VGE = 0 V, f = 1 MHz
Output capacitance
S
gfs
Crss
VCE = 25 V, VGE = 0 V, f = 1 MHz
2
Nov-24-1997
BSM 150 GAL 120 DN2
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
Unit
max.
Switching Characteristics, Inductive Load at Tj = 125 °C
Turn-on delay time
ns
td(on)
VCC = 600 V, VGE = 15 V, IC = 150 A
RGon = 5.6 Ω
Rise time
-
200
400
-
100
200
-
600
800
-
70
100
tr
VCC = 600 V, VGE = 15 V, IC = 150 A
RGon = 5.6 Ω
Turn-off delay time
td(off)
VCC = 600 V, VGE = -15 V, IC = 150 A
RGoff = 5.6 Ω
Fall time
tf
VCC = 600 V, VGE = -15 V, IC = 150 A
RGoff = 5.6 Ω
Free-Wheel Diode
Diode forward voltage
V
VF
IF = 150 A, VGE = 0 V, Tj = 25 °C
-
2
2.5
IF = 150 A, VGE = 0 V, Tj = 125 °C
-
1.8
-
Reverse recovery time
µs
trr
IF = 150 A, VR = -600 V, VGE = 0 V
diF/dt = -1500 A/µs, Tj = 125 °C
Reverse recovery charge
-
0.4
µC
Qrr
IF = 150 A, VR = -600 V, VGE = 0 V
diF/dt = -1500 A/µs
Tj = 25 °C
-
5
-
Tj = 125 °C
-
18
-
3
Nov-24-1997
BSM 150 GAL 120 DN2
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
Unit
max.
Chopper Diode
Chopper diode forward voltage
V
VFC
IFC = 200 A, VGE = 0 V, Tj = 25 °C
-
2
2.5
IFC = 200 A, VGE = 0 V, Tj = 125 °C
-
1.8
-
Reverse recovery time, chopper
µs
trrC
IFC = 200 A, VR = -600 V, VGE = 0 V
diF/dt = -2000 A/µs, Tj = 125 °C
Reverse recovery charge, chopper
-
0.5
µC
QrrC
IFC = 200 A, VR = -600 V, VGE = 0 V
diF/dt = -2000 A/µs
Tj = 25 °C
-
12
-
Tj = 125 °C
-
36
-
4
Nov-24-1997
IGBT-Module
IGBT-Modules
%60*$/'1%60*$5'1
Gehäusemaße / Schaltbild
Package outline / Circuit diagram
PIN 6 and 7
GAL type
only
PIN 4 and 5
GAR type
only
GAL type
GAR type
Update of Drawing Sep-21-98