BSM 50 GB 120 DN2 IGBT Power Module • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate Type VCE BSM 50 GB 120 DN2 1200V 78A IC Package Ordering Code HALF-BRIDGE 1 C67076-A2105-A70 Maximum Ratings Parameter Symbol Collector-emitter voltage VCE Collector-gate voltage VCGR RGE = 20 kΩ Values 1200 Unit V 1200 Gate-emitter voltage VGE DC collector current IC ± 20 A TC = 25 °C 78 TC = 80 °C 50 Pulsed collector current, tp = 1 ms ICpuls TC = 25 °C 156 TC = 80 °C 100 Power dissipation per IGBT W Ptot TC = 25 °C 400 Chip temperature Tj Storage temperature Tstg Thermal resistance, chip case RthJC ≤ 0.3 Diode thermal resistance, chip case RthJCD ≤ 0.6 Insulation test voltage, t = 1min. Vis 2500 Vac Creepage distance - 20 mm Clearance - 11 DIN humidity category, DIN 40 040 - F IEC climatic category, DIN IEC 68-1 - 1 + 150 °C -40 ... + 125 K/W sec 40 / 125 / 56 Oct-21-1997 BSM 50 GB 120 DN2 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Gate threshold voltage V VGE(th) VGE = VCE, IC = 2 mA 4.5 5.5 6.5 VGE = 15 V, IC = 50 A, Tj = 25 °C - 2.5 3 VGE = 15 V, IC = 50 A, Tj = 125 °C - 3.1 3.7 Collector-emitter saturation voltage Zero gate voltage collector current VCE(sat) mA ICES VCE = 1200 V, VGE = 0 V, Tj = 25 °C - 0.8 1 VCE = 1200 V, VGE = 0 V, Tj = 125 °C - 3.5 - Gate-emitter leakage current nA IGES VGE = 20 V, VCE = 0 V - - 200 AC Characteristics Transconductance VCE = 20 V, IC = 50 A Input capacitance 23 nF - 3.3 - - 0.5 - - 0.25 - Coss VCE = 25 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance - Ciss VCE = 25 V, VGE = 0 V, f = 1 MHz Output capacitance S gfs Crss VCE = 25 V, VGE = 0 V, f = 1 MHz 2 Oct-21-1997 BSM 50 GB 120 DN2 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Switching Characteristics, Inductive Load at Tj = 125 °C Turn-on delay time td(on) ns VCC = 600 V, VGE = 15 V, IC = 50 A RGon = 22 Ω Rise time - 44 100 - 56 100 - 380 500 - 70 100 tr VCC = 600 V, VGE = 15 V, IC = 50 A RGon = 22 Ω Turn-off delay time td(off) VCC = 600 V, VGE = -15 V, IC = 50 A RGoff = 22 Ω Fall time tf VCC = 600 V, VGE = -15 V, IC = 50 A RGoff = 22 Ω Free-Wheel Diode Diode forward voltage V VF IF = 50 A, VGE = 0 V, Tj = 25 °C - 2.3 2.8 IF = 50 A, VGE = 0 V, Tj = 125 °C - 1.8 - Reverse recovery time µs trr IF = 50 A, VR = -600 V, VGE = 0 V diF/dt = -800 A/µs, Tj = 125 °C Reverse recovery charge - 0.2 µC Qrr IF = 50 A, VGE = 0 V VR = -600 V, diF/dt = -800 A/µs, Tj = 25 °C - 2.8 - VR - 600 V, diF/dt - 800 A/µs, Tj = 125 °C - 8 - 3 Oct-21-1997 BSM 50 GB 120 DN2 Power dissipation Ptot = ƒ(TC) parameter: Tj ≤ 150 °C Safe operating area IC = ƒ(VCE) parameter: D = 0, TC = 25°C , Tj ≤ 150 °C 450 10 3 W A t = 14.0µs p Ptot IC 350 10 2 300 100 µs 250 10 1 200 1 ms 150 10 ms 10 0 100 DC 50 0 0 20 40 60 80 100 120 °C 10 -1 0 10 160 10 1 10 2 10 3 TC Collector current IC = ƒ(TC) parameter: VGE ≥ 15 V , Tj ≤ 150 °C Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T IGBT 10 0 90 K/W A IC V VCE ZthJC 70 10 -1 60 50 10 -2 D = 0.50 40 0.20 0.10 30 10 -3 20 0.05 single pulse 0.02 0.01 10 0 0 20 40 60 80 100 120 °C 160 TC 10 -4 -5 10 10 -4 10 -3 10 -2 10 -1 s 10 0 tp 4 Oct-21-1997 BSM 50 GB 120 DN2 Typ. output characteristics Typ. output characteristics IC = f (VCE) IC = f (VCE) parameter: tp = 80 µs, Tj = 25 °C parameter: tp = 80 µs, Tj = 125 °C 100 100 A IC 80 70 A 17V 15V 13V 11V 9V 7V IC 80 70 60 60 50 50 40 40 30 30 20 20 10 10 0 17V 15V 13V 11V 9V 7V 0 0 1 2 3 V 5 0 VCE 1 2 3 V 5 VCE Typ. transfer characteristics IC = f (VGE) parameter: tp = 80 µs, VCE = 20 V 100 A IC 80 70 60 50 40 30 20 10 0 0 2 4 6 8 10 V 14 VGE 5 Oct-21-1997 BSM 50 GB 120 DN2 Typ. gate charge VGE = ƒ(QGate) parameter: IC puls = 50 A Typ. capacitances C = f (VCE) parameter: VGE = 0, f = 1 MHz 10 2 20 V nF VGE 16 C 14 600 V 800 V 10 1 12 Ciss 10 8 10 0 6 Coss 4 Crss 2 0 0 40 80 120 160 200 240 10 -1 0 280 nC 340 5 10 15 20 25 30 V VCE QGate 40 Reverse biased safe operating area Short circuit safe operating area ICpuls = f(VCE) , Tj = 150°C parameter: VGE = 15 V ICsc = f(VCE) , Tj = 150°C parameter: VGE = ± 15 V, tSC ≤ 10 µs, L < 50 nH 2.5 12 ICpuls/IC ICsc/IC 8 1.5 6 1.0 4 0.5 0.0 0 2 200 400 600 800 1000 1200 V 1600 VCE 6 0 0 200 400 600 800 1000 1200 V 1600 VCE Oct-21-1997 BSM 50 GB 120 DN2 Typ. switching time Typ. switching time I = f (IC) , inductive load , Tj = 125°C t = f (RG) , inductive load , Tj = 125°C par.: VCE = 600 V, VGE = ± 15 V, RG = 22 Ω par.: VCE = 600 V, VGE = ± 15 V, IC = 50 A 10 3 10 4 ns t tdoff ns t tdoff 10 3 tr 10 2 tr tdon tf 10 2 tdon tf 10 1 0 20 40 60 80 A 10 1 0 120 20 40 60 80 IC Ω 120 RG Typ. switching losses Typ. switching losses E = f (IC) , inductive load , Tj = 125°C E = f (RG) , inductive load , Tj = 125°C par.: VCE = 600 V, VGE = ± 15 V, RG = 22 Ω par.: VCE = 600 V, VGE = ± 15 V, IC = 50 A 25 25 Eon E mWs E mWs Eon 15 15 10 10 Eoff Eoff 5 0 0 5 20 40 60 80 A 120 IC 7 0 0 20 40 60 80 Ω 120 RG Oct-21-1997 BSM 50 GB 120 DN2 Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T Forward characteristics of fast recovery reverse diode IF = f(VF) parameter: Tj 10 0 100 A IF Diode K/W 80 ZthJC 10 -1 70 60 Tj=125°C Tj=25°C 50 10 -2 D = 0.50 0.20 40 0.10 30 10 -3 0.05 single pulse 0.02 20 0.01 10 0 0.0 0.5 1.0 1.5 2.0 V 3.0 VF 10 -4 -5 10 10 -4 10 -3 10 -2 10 -1 s 10 0 tp 8 Oct-21-1997 BSM 50 GB 120 DN2 Circuit Diagram Package Outlines Dimensions in mm Weight: 250 g 9 Oct-21-1997