The documentation and process conversion measures necessary to comply with this revision shall be completed by 23 October 2001. INCH-POUND MIL-PRF-19500/512E 23 July 2001 SUPERSEDING MIL-PRF-19500/512D 14 July 2000 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, SWITCHING TYPES 2N4029, 2N4033, 2N4033UA, 2N4033UB, JAN, JANTX, JANTXV, JANS AND JANKC2N4033 AND JANHC2N4033 This specification is approved for use by all Departments and Agencies of the Department of Defense. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for PNP silicon transistors designed for use in high speed switching and driver applications. Four levels of product assurance are provided for each encapsulated device type and two levels of product assurance for each unencapsulated specified as in MIL-PRF-19500. 1.2 Physical dimensions. See figures 1 (TO-18), figure 2 (TO-39), figure 3 and figure 4 (surface mount) ) and figure 5 (JANKC and JANHC) herein. 1.3 Maximum ratings. PT (1) PT (2) PT (3) PT (1) TA = +25°C TA = +25°C TA = +25°C TA = +25°C VCBO VCEO VEBO IC TOP and TSTG 2N4029 2N4033 2N4033UA 2N4033UB W W W W V dc V dc V dc A dc °C 0.5 0.8 0.65 0.5 80 80 5.0 1.0 -65 to +200 RθJA RθJA RθJA 2N4029 2N4033UB 2N4033 2N4033UA °C/W °C/W °C/W 325 175 210 (1) Derate linearly 3.08 mW/°C above TA = +37.5°C. (2) Derate linearly 5.7 mW/°C above TA = +60°C. (3) Derate linearly 4.76 mW/°C above TA = +63.5°C. Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Defense Supply Center, Columbus, ATTN: DSCC/VAC, Post Office Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter. AMSC N/A FSC 5961 DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited. MIL-PRF-19500/512E 1.4 Primary electrical characteristics at TA = +25°C. Limits hFE1 hFE2 hFE3 hFE4 |hfe| VCE = 5.0 V dc IC = 100 µA dc VCE = 5.0 V dc IC = 100 mA dc VCE = 5.0 V dc IC = 500 mA dc VCE = 5.0 V dc IC = 1.0 A dc f = 100 MHz VCE = 10 V dc IC = 50 mA dc 50 100 300 70 25 1.5 6.0 Min Max Limits VCE(SAT)2 IC = 500 mA dc IB = 50 mA dc Cobo VCB = 10 V dc IE = 0 100 kHz ≤ f ≤ 1 MHz td tr ts tf V dc pF ns ns ns ns 0.5 20 15 25 175 35 Min Max 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements documents cited in sections 3 and 4 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Department of Defense Index of Specifications and Standards (DoDISS) and supplement thereto, cited in the solicitation (see 6.2). SPECIFICATION DEPARTMENT OF DEFENSE MIL-PRF-19500 - Semiconductor Devices, General Specification for. STANDARD DEPARTMENT OF DEFENSE MIL-STD-750 - Test Methods for Semiconductor Devices. (Unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the Document Automation and Production Services (DAPS), Building 4D (DPM-DODSSP), 700 Robbins Avenue, Philadelphia, PA 19111-5094.) 2 MIL-PRF-19500/512E Dimensions Symbol Notes Inches Millimeters Min Max Min Max CD .178 .195 4.52 4.95 CH .170 .210 4.32 5.34 HD .209 .230 5.31 5.84 LC .100 TP 2.54 TP 6 LD .016 .021 0.41 0.53 7, 8 LL .500 .750 12.70 19.05 7, 8, 12 LU .016 .019 0.41 0.48 7, 8 1.27 7. 8 L1 .050 L2 .250 Q 6.35 .040 7, 8 1.02 5 TL .028 .048 0.71 1.22 3, 4 TW .036 .046 0.91 1.17 3 0.18 10 r P α .010 .100 45°TP 2.54 45°TP 6 NOTES: 1. Dimension are in inches. 2. Metric equivalents are given for general information only. 3. Beyond r (radius) maximum, TW shall be held for a minimum length of .011 (0.28 mm). 4. Dimension TL measured from maximum HD. 5. Body contour optional within zone defined by HD, CD, and Q. 6. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within .007 inch (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. The device may be measured by direct methods. 7. Dimension LU applies between L1 and L2. Dimension LD applies between L2 and minimum. Diameter is uncontrolled in L1 and beyond LL minimum. 8. All three leads. 9. The collector shall be internally connected to the case. 10. Dimension r (radius) applies to both inside corners of tab. 11. In accordance with ANSI Y14.5M, diameters are equivalent to θx symbology. 12. For "L" suffix devices, dimension LL is 1.50 (38.10 mm) minimum, 1.75 (19.05 mm) maximum. FIGURE 1. Physical dimensions (type 2N4029) (TO - 18). 3 MIL-PRF-19500/512E Dimensions Symbol Inches Millimeters Min Max Min Max CD .305 .335 7.75 8.51 CH .240 .260 6.10 6.60 HD .335 .370 8.51 9.40 LC .200 TP 5.08 TP Notes 6 LD .016 .021 0.41 0.53 7, 8 LL .500 .750 12.70 19.05 7, 8, 12 LU .016 .019 0.41 0.48 7, 8 1.27 7, 8 L1 L2 .050 .250 Q 6.35 .050 7, 8 1.27 5 TL .029 .045 0.74 1.14 3, 4 TW .028 .034 0.71 0.86 3 0.18 10 r P α .010 .100 45°TP 2.54 45°TP 6 NOTES: 1. Dimension are in inches. 2. Metric equivalents are given for general information only. 3. Beyond r (radius) maximum, TW shall be held for a minimum length of .011 (0.28 mm). 4. Dimension TL measured from maximum HD. 5. Body contour optional within zone defined by HD, CD, and Q. 6. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within .007 inch (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. The device may be measured by direct methods. 7. Dimension LU applies between L1 and L2. Dimension LD applies between L2 and minimum. Diameter is uncontrolled in L1 and beyond LL minimum. 8. All three leads. 9. The collector shall be internally connected to the case. 10. Dimension r (radius) applies to both inside corners of tab. 11. In accordance with ANSI Y14.5M, diameters are equivalent to θx symbology. 12. For "L" suffix devices, dimension LL is 1.50 (38.10 mm) minimum, 1.75 (19.05 mm) maximum. FIGURE 2. Physical dimensions (type 2N4033) (TO - 39). 4 MIL-PRF-19500/512E A Min .061 Dimensions Millimeters Max Min Max .075 1.55 1.90 A1 .029 .041 0.74 1.04 D3 B1 .022 .028 0.56 0.71 E Ltr Inches B2 .075 REF Dimensions Notes Ltr 3 D2 1.91 REF B3 .006 .022 0.15 0.56 D .145 .155 3.68 D1 .045 .055 1.14 Inches Min Max .0375 BSC .155 .215 E3 5 Millimeter Min Max 0.952 BSC .225 Notes 3.93 5.46 .225 5.71 5.71 L1 .032 .048 0.81 1.22 3.93 L2 .072 .088 1.83 2.23 1.39 L3 .003 .007 0.08 0.18 5 NOTES: 1. Dimensions are in inches. 2. Metric equivalents are given for general information only. 3. Dimension "A" controls the overall package thickness. When a window lid is used, dimension "A" must increase by a minimum of .010 inch (0.254 mm) and a maximum of .040 inch (1.020 mm). 4. The corner shape (square, notch, radius, etc.) may vary at the manufacturer's option, from that shown on the drawing. 5. Dimensions "B3" minimum and "L3" minimum and the appropriately castellation length define an unobstructed three-dimensional space traversing all of the ceramic layers in which a castellation was designed. (Castellations are required on bottom two layers, optional on top ceramic layer.) Dimension "B3" maximum and "L3" maximum define the maximum width and depth of the castellation at any point on its surface. Measurement of these dimensions may be made prior to solder dipping. FIGURE 3. Physical dimensions, surface mount (UA version). 5 MIL-PRF-19500/512E Ltr A A1 B1 D D1 D2 D3 E E3 L1 Dimensions Inches Millimeters Min. Max. Min. Max. .046 .056 0.97 1.42 .017 .035 0.43 0.89 .016 .024 0.41 0.61 .085 .108 2.41 2.74 .071 .079 1.81 2.01 .035 .039 0.89 0.99 .115 .128 2.82 3.25 .022 .038 0.56 0.96 Notes 3 4 NOTES: 1. Dimensions are in inches. 2. Metric equivalents are given for general information only. 3. Dimensions B2 and B3 are identical to B1 4. Dimension L2 is identical to L1. FIGURE 4. Physical dimensions, surface mount UB version. 6 MIL-PRF-19500/512E B E Die size: Die thickness: Base pad: Emitter pad: Back metal: Top metal: Back side: Glassivation: .030 x .030 inch (0.762 x 0.762 mm). .008 ±.0016 inch (0.2032 ±0.04064 mm). .005 inch diameter (0.127 mm). .005 inch diameter (0.127 mm). Gold, 6500 ± 1950 Ang. Aluminum, 22500 ±2500 Ang. Collector. SiO2, 7500 ± 1500 Ang. FIGURE 5. JANHC and JANKC (A-version) die dimensions. 7 MIL-PRF-19500/512E 2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 General. The requirements for acquiring the product described herein shall consist of this document and MIL-PRF-19500. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer's list (QML) before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500. 3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified in MIL-PRF-19500 and on figures 1, 2, 3, 4, and 5 herein. 3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750 and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.5 Marking. Marking shall be in accordance with MIL-PRF-19500. 3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characterics are as specified in 1.3, 1.4 and table I herein. 3.7 Electrical test requirements. The electrical test requirements shall be the subgroups specified in 4.4.2 and 4.4.3 herein. 3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 8 MIL-PRF-19500/512E 4.3 Screening (JANS, JANTX and JANTXV levels only). Screening shall be in accordance with table IV of MIL-PRF-19500 and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Measurement Screen (see table IV of MIL-PRF-19500) (1) 3c JANS level JANTX and JANTXV levels Required (see 4.3.2) Required (see 4.3.2) 9 hFE2, ICBO2 Not applicable 11 ICBO2; hFE2; ∆ICBO2 = 100 percent of initial value or 2 nA dc, whichever is greater; ∆hFE2 = 15 percent change from initial value. ICBO2 and hFE2 12 See 4.3.1 See 4.3.1 13 Subgroups 2 and 3 of table I herein; ∆ICBO2 = 100 percent of initial value or 2 nA dc, whichever is greater; ∆hFE2 = 15 percent change from initial value. Subgroup 2 of table I herein; ∆ICBO2 = 100 percent of initial value or 2 nA dc, whichever is greater; ∆hFE2 = 15 percent change from initial value. (1) Thermal impedance may be performed any time after sealing provided temperature cycling is performed in accordance with MIL-PRF-19500, screen 3 prior to this thermal test. 4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: TA = Room ambient as defined in 4.5 of MIL-STD-750; VCB = 10-20 V dc; power shall be applied to achieve TJ = 135°C minimum and a minimum power dissipation = 75 percent of maximum rated PT (see 1.3). NOTE: No heat sink or forced air cooling on the devices shall be permitted. 9 MIL-PRF-19500/512E 4.3.2 Thermal impedance (ZθJX measurements). The Z θJX measurements shall be performed in accordance with method 3131 of MIL-STD-750. a. IM measurement current ...................... 5 mA. b. IH forward heating current ................... 200 mA (min). c. tH heating time..................................... 25 - 30 ms. d. tmd measurement delay time .............. 60 µs max. e. VCE collector-emitter voltage .............. 10 V dc minimum( same as V H ). f. VH collector-emitter heating voltage ... 10 V ( minimum ). g. tSW sample window time .................... 10 µs ( maximum ). The maximum limit for ZθJX under these test conditions are ZθJX (max) = 60°C/W. (UA and UB); 67°C/W (2N4029 and 2N4033). 4.3.3 Screening (JANHC and JANKC). Screening of JANHC and JANKC die shall be in accordance with MIL-PRF-19500, "Discrete Semiconductor Die/Chip Lot Acceptance". Burn-in duration for the JANKC level follows JANS requirements; the JANHC follows JANTX requirements. 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with appendix E, table V of MIL-PRF-19500 and table I herein. 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the tests and conditions specified for subgroup testing in table VIa (JANS) of MIL-PRF-19500 and 4.4.2.1 herein. Electrical measurements (end-points) and delta requirements shall be in accordance with group A, subgroup 2 and 4.5.2 herein: delta requirements only apply to subgroups B4, and B5. See 4.4.2.2 for JAN, JANTX, and JANTXV group B testing. Electrical measurements (end-points) and delta requirements for JAN, JANTX, and JANTXV shall be after each step in 4.4.2.2 and shall be in accordance with group A, subgroup 2 and 4.5.2 herein. 4.4.2.1 Group B inspection, table VIa (JANS) of MIL-PRF-19500. Subgroup Method Condition B4 1037 VCB = 10 V dc. B5 1027 VCB = 10 – 20 V dc; PD ≥ 75 percent of maximum rated PT (see 1.3). Option 1: 96 hours min, sample size in accordance with table VIa of MIL-PRF-19500, adjust TA to achieve TJ = +275°C minimum. Option 2: 216 hours., sample size = 45, c = 0; adjust TA to achieve TJ = +225°C minimum. 10 MIL-PRF-19500/512E 4.4.2.2 Group B inspection, (JAN, JANTX and JANTXV). Separate samples may be used for each step. In the event of a group B failure, the manufacturer may pull a new sample at double size from either the failed assembly lot or from another assembly lot from the same wafer lot. If the new “assembly lot” option is exercised, the failed assembly lot shall be scrapped. Step Method Condition 1 1039 Steady-state life: Test condition B, 340 hours, VCB = 10 - 20 V dc, power shall be applied to the device to achieve TJ = +150°C minimum, and a minimum of PD = 75 percent of maximum rated PT as defined in 1.3 herein. n = 45, c = 0. 2 1039 The steady-state life test of step 1 shall be extended to 1,000 hours for each die design. Samples shall be selected from a wafer lot every twelve months of wafer production. Group B, step 2 shall not be required more than once for any single wafer lot. n = 45, c = 0. 3 1032 High- temperature life (non-operating), TA = +200°C, t = 340 hours, n = 22, c = 0. 4.4.2.3 Group B sample selection. Samples selected from group B inspection shall meet all of the following requirements: a. For JAN, JANTX, and JANTXV samples shall be selected randomly from a minimum of three wafers (or from each wafer in the lot) from each wafer lot. For JANS, samples shall be selected from each inspection lot. See MIL-PRF-19500. b. Must be chosen from an inspection lot that has been submitted to and passed group A, subgroup 2, conformance inspection. When the final lead finish is solder or any plating prone to oxidation at high temperature, the samples for life test (subgroups B4 and B5 for JANS, and group B for JAN, JANTX, and JANTXV) may be pulled prior to the application of final lead finish. 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the tests and conditions specified for subgroup testing in table VII of MIL-PRF-19500, and in 4.4.3.1 (JANS) and 4.4.3.2 (JAN, JANTX, and JANTXV) herein for group C testing. Electrical measurements (end-points) and delta requirements shall be in accordance with group A, subgroup 2 and 4.5.2 herein; delta requirements only apply to subgroup C6. 4.4.3.1 Group C inspection, table VII (JANS) of MIL-PRF-19500. Subgroup Method Condition C2 2036 Test condition E; (method 2036 not applicable for UA and UB devices). C6 1026 1,000 hours at VCB = 10 V dc; power shall be applied to achieve TJ = +150°C minimum and a minimum of PD = 75 percent of maximum rated PT as defined in 1.3. 4.4.3.2 Group C inspection, table VII (JAN, JANTX, and JANTXV) of MIL-PRF-19500. Subgroup C2 C6 Method 2036 Condition Test condition E; not applicable for UA and UB devices. Not applicable. 11 MIL-PRF-19500/512E 4.4.3.3 Group C sample selection. Samples for subgroups in group C shall be chosen at random from any inspection lot containing the intended package type and lead finish procured to the same specification which is submitted to and passes group A tests for conformance inspection. When the final lead finish is solder or any plating prone to oxidation at high temperature, the samples for C6 life test may be pulled prior to the application of final lead finish. Testing of a subgroup using a single device type enclosed in the intended package type shall be considered as complying with the requirements for that subgroup. 4.5 Method of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows. 4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750. 4.5.2 Delta requirements. Delta requirements shall be as follows: 3/ 4/ 5/ 6/ Step Inspection MIL-STD-750 Symbol Limit 1/ 2/ Method Conditions 1. Collector-base cutoff current 3036 Bias condition D, VCB = 60 V dc ∆ICB02 (1) 100 percent of initial value or 5 nA dc, whichever is greater. 2. Forward current transfer ratio 3076 VCE = 5 V dc; IC = 100 mA dc; pulsed see 4.5.1 ∆hFE2 (1) ±25 percent change from initial reading. 1/ See MIL-PRF-19500 for sampling plan. 2/ Devices which exceed the group A limits for this test shall not be acceptable. 3/ The delta measurements for table VIa (JANS) of MIL-PRF-19500 are as follows: a. Subgroup 3, see table II herein, step 2. b. Subgroups 4 and 5, see table II herein, step 2. 4/ The delta measurements for table VIb (JANTX and JANTXV) of MIL-PRF-19500 are as follows: a. Subgroup 2, see table II herein, step 1. b. Subgroups 3 and 6, see table II herein, step 1. 5/ The delta measurements for table VII of MIL-PRF-19500 are as follows: a. Subgroup 6, see table II herein, step 1. 12 Unit MIL-PRF-19500/512E TABLE I. Group A inspection. Inspection 1/ MIL-STD-750 Method Symbol Conditions Limits Min Unit Max Subgroup 1 2/ Visual and mechanical inspection 3/ 2071 n = 45 devices, c = 0 Solderability 3/ 4/ 2026 n = 15 leads, c = 0 Resistance to solvents 3/ 4/ 5/ 1022 n = 15 devices, c = 0 Temp cycling 3/ 4/ 1051 Test condition C, 25 cycles. n = 22 devices, c = 0 Heremetic seal 4/ Fine leak Gross leak 1071 n = 22 devices, c = 0 Electrical measurements 4/ Bond strength 3/ 4/ Group A, subgroup 2 2037 Precondition TA = + 250°C at t = 24 hours or TA = + 300°C at t = 2 hours n = 11 wires, c = 0 Collector to base cutoff current 3036 Bias condition D; VCB = 80 V dc pulsed (see 4.5.1) ICBO1 10 µA dc Emitter to base cutoff current 3061 Bias condition D; VBE = 5 V dc IEBO1 10 µA dc Collector - base cutoff current 3036 Bias condition D; VCB = 60 V dc ICBO2 10 nA dc Collector - emitter cutoff current 3041 Bias condition A; VBE = 2.0 V dc; VCE = 60 V dc ICEX1 25 nA dc Base emitter cutoff current 3061 Bias condition D; VBE = 3.0 V dc IEBO2 25 nA dc VCE = 5.0 V dc; IC = 100 µA dc hFE1 Subgroup 2 Forward-current 3061 transfer ratio See footnotes at end of table. 13 50 MIL-PRF-19500/512E TABLE I. Group A inspection - Continued. Inspection 1/ MIL-STD-750 Method Symbol Conditions Subgroup 2 – Continued Limits Unit Min Max hFE2 100 300 Forward-current transfer ratio 3076 VCE = 5.0 V dc; IC = 100 mA dc Forward-current transfer ratio 3076 VCE = 5.0 V dc; IC = 500 mA dc pulsed (see 4.5.1) hFE3 70 Forward-current transfer ratio 3076 VCE = 5.0 V dc; IC = 1.0 A dc; pulsed (see 4.5.1) hFE4 25 Collector – emitter saturated voltage 3071 IC = 150 mA dc; IB = 15 mA dc pulsed (see 4.5.1) VCE(SAT)1 0.15 V dc Collector – emitter saturated voltage 3071 IC = 500 mA dc; IB = 50 mA dc; pulsed (see 4.5.1) VCE(SAT)2 0.50 V dc Collector – emitter saturated voltage 3071 IC = 1.0 A dc; IB = 100 mA dc; pulsed (see 4.5.1) VCE(SAT)3 1.0 V dc Base – emitter Saturated voltage 3066 Test condition A; IC = 150 mA dc; IB = 15 mA dc pulsed (see 4.5.1) VBE(SAT)1 0.9 V dc Base - emitter Saturated voltage 3066 Test condition A; IC = 500 mA dc; IB = 50 mA dc; pulsed (see 4.5.1) VBE(SAT)2 1.2 V dc ICBO3 25 µA dc Subgroup 3 High-temperature operation: Collector -base cutoff current TA = +150°C 3036 Low-temperature operation: Forward-current transfer ratio Bias condition D; VCB = 60 V dc TA = -55°C 3076 VCE = 5.0 V dc; IC = 500 mA dc pulsed (see 4.5.1) See footnotes at end of table. 14 hFE5 30 MIL-PRF-19500/512E TABLE I. Group A inspection - Continued. Inspection 1/ MIL-STD-750 Method Symbol Conditions Limits Unit Min Max 1.5 6.0 Subgroup 4 Magnitude of common emitter small-signal short-circuit forwardcurrent transfer ratio 3306 VCE = 10 V dc; IC = 50 mA dc; f = 100 MHz | hfe | Open circuit output capacitance 3236 VCB = 10 V dc; IE = 0 100 kHz ≤ f ≤ 1 MHz Cobo 20 pF Input capacitance (output open-circuited) 3240 VEB = 0.5 V dc; IC = 0; 100 kHz ≤ f ≤ 1 MHz Cibo 80 pF On-time 3251 Test condition A; IC = 500 mA dc; IB1 = 50 mA dc; (see figure 6) td 15 ns Rise time 3251 Test condition A; IC = 500 mA dc; IB1 = 50 mA dc; (see figure 6) tr 25 ns Storage time 3251 Test condition A; IC = 500 mA dc; IB1 = 50 mA dc; (see figure 7) ts 175 ns Fall time 3251 Test condition A; IC = 500 mA dc; IB1 = 50 mA dc; (see figure 7) tf 35 Ns Pulse response Subgroups 5, 6, and 7 Not applicable 1/ For sampling plan see MIL-PRF-19500. 2/ For resubmission of failed subgroup A1, double the sample size of the failed test or sequence of tests. A failure in group A, subgroup 1 shall not require retest of the entire subgroup. Only the failed test shall be rerun upon submission. 3/ Separate samples may be used. 4/ Not required for JANS devices. 5/ Not required for laser marked devices. 15 MIL-PRF-19500/512E NOTES: 1. The rise time (tr) of the applied pulse shall be ≤ 2.0 ns, duty cycle ≤ 2 percent, and the generator source Z shall be 50 Ω. 2. Sampling oscilloscope: ZIN ≥ 100 kΩ; Cin ≤ 12 pF, rise time(tr) ≤ 5 ns. FIGURE 6. Delay and rise time, test circuit. NOTES: 1. The rise time (tr) of the applied pulse shall be ≤ 20 ns, duty cycle ≤ 2 percent, and the generator source impedance shall be 50Ω. 2. Sampling oscilloscope: ZIN ≥ 100 kΩ; Cin ≤ 12 pF, rise time(tr) ≤ 5 ns. FIGURE 7. Storage and fall time, test circuit. 16 MIL-PRF-19500/512E 5. PACKAGING 5.1 Packaging. Packaging shall prevent mechanical damage of the devices during shipping and handling and shall not be detrimental to the device. When actual packaging of materiel is to be performed by DoD personnel, these personnel need to contact the responsible packaging activity to ascertain requisite packaging requirements. Packaging requirements are maintained by the Inventory Control Points' packaging activity within the Military Department or Defense Agency, or within the Military Departments' System Command. Packaging data retrieval is available from the managing Military Departments' or Defense Agency's automated packaging files, CD-ROM products, or by contacting the responsible packaging activity. 6. NOTES (This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.) 6.1 Intended use. The notes specified in MIL-PRF-19500 are applicable to this specification. 6.2 Acquisition requirements. Acquisition documents must specify the following: a. Title, number, and date of this specification. b Issue of DoDISS to be cited in the solicitation (see 2.2.1). c. The lead finish as specified (see 3.4.1). d. Type designation and quality assurance level. e. Packaging requirements (see 5.1). 6.3 Qualification. With respect to products requiring qualification, awards will be made only for products which are, at the time of award of contract, qualified for inclusion in Qualified Manufacturers' List (QML) whether or not such products have actually been so listed by that date. The attention of the contractors is called to these requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the Federal Government tested for qualification in order that they may be eligible to be awarded contracts or orders for the products covered by this specification. Information pertaining to qualification of products may be obtained from Defense Supply Center, Columbus, ATTN: DSCC/VQE, P.O. Box 3990, Columbus, OH 43216-5000. 6.4. Suppliers of JANHC and JANKC die. The qualified JANHC and JANKC suppliers with the applicable letter version (example JANHCA2N4033) will be identified on the QPL. Die ordering information PIN Manufacturer 34156 2N4033 JANHCA2N4033 JANKCA2N4033 6.5 Changes from previous issue. Marginal notations are not used in this revision to identify changes with respect to the previous issue due to the extensiveness of the changes. 17 MIL-PRF-19500/512E Custodians: Army - CR Navy - NW Air Force - 11 DLA - CC Preparing activity: DLA - CC (Project 5961-2386) Review activities: Army - AV Air Force - 19, 71, 99 18 STANDARDIZATION DOCUMENT IMPROVEMENT PROPOSAL INSTRUCTIONS 1. The preparing activity must complete blocks 1, 2, 3, and 8. In block 1, both the document number and revision letter should be given. 2. The submitter of this form must complete blocks 4, 5, 6, and 7. 3. The preparing activity must provide a reply within 30 days from receipt of the form. NOTE: This form may not be used to request copies of documents, nor to request waivers, or clarification of requirements on current contracts. Comments submitted on this form do not constitute or imply authorization to waive any portion of the referenced document(s) or to amend contractual requirements. I RECOMMEND A CHANGE: 1. DOCUMENT NUMBER MIL-PRF-19500/512E 2. DOCUMENT DATE 010723 3. DOCUMENT TITLE SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, SWITCHING TYPES 2N4029, 2N4033, 2N4033UA, 2N4033UB, JAN, JANTX, JANTXV, AND JANS AND JANKC2N4033 AND JANHC2N4033 4. NATURE OF CHANGE (Identify paragraph number and include proposed rewrite, if possible. Attach extra sheets as needed.) 5. REASON FOR RECOMMENDATION 6. SUBMITTER a. NAME (Last, First, Middle initial) c. ADDRESS (Include Zip Code) b. ORGANIZATION d. TELEPHONE (Include Area Code) COMMERCIAL DSN FAX EMAIL 7. DATE SUBMITTED 8. PREPARING ACTIVITY a. Point of Contact Alan Barone c. ADDRESS Defense Supply Center Columbus, ATTN: DSCC-VAC P.O. Box 3990 Columbus, OH 43216-5000 DD Form 1426, Feb 1999 (EG) b. TELEPHONE Commercial DSN FAX EMAIL 614-692-0510 850-0510 614-692-6939 [email protected] IF YOU DO NOT RECEIVE A REPLY WITHIN 45 DAYS, CONTACT: Defense Standardization Program Office (DLSC-LM) 8725 John J. Kingman, Suite 2533, Fort Belvoir, VA 22060-6221 Telephone (703) 767-6888 DSN 427-6888 Previous editions are obsolete WHS/DIOR, Feb 99