ETC JANTX2N5662

The documentation and process conversion
measures necessary to comply with this revision
shall be completed by 27 October 2001.
INCH-POUND
MIL-PRF-19500/454D
27 July 2001
SUPERSEDING
MIL-PRF-19500/454C
19 August 1999
PERFORMANCE SPECIFICATION
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER
TYPE: 2N5660, 2N5661, 2N5662, AND 2N5663, JAN, JANTX, JANTXV
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for NPN, silicon, power transistors. Three
level of product assurance are provided for each device type as specified in MIL-PRF-19500.
1.2 Physical dimensions. For types 2N5660 and 2N5661, see figure 1 (similar to TO-66).
For types 2N5662 and 2N5663, see figure 2 (similar to TO-5).
1.3 Maximum ratings. TC = +25°C, unless otherwise specified.
Type
2N5660
2N5661
2N5662
2N5663
(1)
(2)
(3)
(4)
PT
TA =
+25°C
PT
TC =
+100°C
VCBO
VCEO
VEBO
IB
IC
TJ and TSTG
VCER
W
W
V dc
V dc
V dc
A dc
A dc
°C
V dc
250
400
250
400
200
300
200
300
6.0
6.0
6.0
6.0
0.5
0.5
0.5
0.5
2.0
2.0
2.0
2.0
-65 to +200
-65 to +200
-65 to +200
-65 to +200
250
400
250
400
2.0
2.0
1.0
1.0
(1)
(1)
(3)
(3)
20
20
15
15
(2)
(2)
(4)
(4)
Derate linearly, 11.4 mW/°C for TA > +25°C.
Derate linearly, 200 mW/°C for TC > +100°C.
Derate linearly, 5.7 mW/°C for TA > +25°C.
Derate linearly, 150 mW/°C for TC > +100°C.
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in
improving this document should be addressed to: Defense Supply Center Columbus, ATTN: DSCC-VAC, P.O. Box
3990, Columbus, OH 43216-5000, using the Standardization Document Improvement Proposal (DD Form 1426)
appearing at the end of this document or by letter.
AMSC N/A
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
FSC 5961
MIL-PRF-19500/454D
1.4 Primary electrical characteristics.
Limits
|hfe|
VBE(sat) (1)
VCE(sat) (1)
IC = 0.5 A dc
IC = 0.1 A dc
IC = 1.0 A dc
IC = 1 A dc
ton
toff
VCE = 5 V dc
VCE = 5 V dc
IB = 0.1 A dc
IB = 0.1 A dc
IC = 0.5 A
dc
IC = 0.5 A dc
2N5660
2N5662
Min
Max
Pulse response
hFE2 (1)
40
120
2N5661
2N5663
f = 10 MHz
25
75
2
7
2N5660
2N5662
2N5661
2N5663
V dc
V dc
µs
µs
µs
1.2
0.4
0.25
0.85
1.2
(1) Pulsed (see 4.5.1).
RθJC for 2N5660, 2N5661 = 5°C/W maximum; for 2N5662, 2N5663 = 6.67°C/W maximum.
RθJA for 2N5660, 2N5661 = 87.5°C/W maximum; for 2N5662, 2N5663 = 175°C/W maximum.
2. APPLICABLE DOCUMENTS
2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This
section does not include documents cited in other sections of this specification or recommended for additional
information or as examples. While every effort has been made to ensure the completeness of this list, document
users are cautioned that they must meet all specified requirements documents cited in sections 3 and 4 of this
specification, whether or not they are listed.
2.2 Government documents.
2.2.1 Specifications, standards and handbooks. The following specifications, standards and handbooks form a
part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are
those listed in the issue of the Department of Defense Index of Specifications and Standards (DODISS) and
supplement thereto, cited in the solicitation (see 6.2).
SPECIFICATION
DEPARTMENT OF DEFENSE
MIL-PRF-19500 - Semiconductor Devices, General Specification for.
STANDARD
DEPARTMENT OF DEFENSE
MIL-STD-750 - Test Methods for Semiconductor Devices.
(Unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the
Document Automation and Production Services (DAPS), Building 4D (DPM–DODSSP), 700 Robbins Avenue,
Philadelphia, PA 19111-5094.)
2
MIL-PRF-19500/454D
FIGURE 1. Physical dimensions, 2N5660 and 2N5661, (similar to TO-66).
3
MIL-PRF-19500/454D
Ltr
Dimensions
Inches
Millimeters
Min
Max
Min
Max
CD
0.470
0.500
11.94
12.70
CH
0.250
0.340
6.35
8.64
HR
0.350
7
8.89
HR1
0.115
0.145
2.92
3.68
HT
0.050
0.075
1.27
1.91
LD
0.028
0.034
0.71
0.86
4, 6
LL
0.360
0.500
9.14
12.70
4
1.27
4,6
4
0.050
L1
\
Notes
4
MHD
0.142
0.152
3.61
3.86
MHS
0.958
0.962
24.33
24.43
PS
0.190
0.210
4.83
5.33
3
PS1
0.093
0.107
2.36
2.72
3
s
0.570
0.590
14.48
14.99
3
NOTES:
1. Dimensions are in inches. Lead 1 is emitter, lead 2 is base, and case is collector.
2. Metric equivalents are given for general information only.
3. These dimensions should be measured at points 0.050 inch (1.27 mm) +0.005 inch (0.13 mm)
-0.000 inch (0.00 mm) below seating plane. When gauge is not used, measurement will be
made at the seating plane.
4. Two places.
5. The seating plane of the header shall be flat within 0.001 inch (0.03 mm) concave to 0.004 inch
(0.10 mm) convex inside a 0.930 inch (23.62 mm) diameter circle on the center of the header
and flat within 0.001 inch (0.03 mm) concave to 0.006 inch (0.15 mm) convex overall.
6. Lead diameter shall not exceed twice LD within L1.
7. Body contour is optional within zone defined by CD.
8. In accordance with ANSI Y14.5M, diameters are equivalent to φx symbology.
FIGURE 1. Physical dimensions, 2N5660 and 2N5661, (similar to TO-66) – Continued.
4
MIL-PRF-19500/454D
FIGURE 2. Physical dimensions, 2N5662 and 2N5663, (similar to TO-5).
5
MIL-PRF-19500/454D
Ltr
CD
CH
HD
LC
LD
LL
LU
L1
L2
TL
TW
P
Q
r
α
Dimensions
Inches
Millimeters
Min
Max
0.305 0.355
0.240 0.260
0.335 0.370
0.200 TP
0.016 0.021
1.500 1.750
0.016 0.019
0.050
0.250
0.029 0.045
0.028 0.034
0.100
0.050
0.010
45°TP
Min
Max
7.75
9.02
6.10
6.60
8.51
9.40
5.08 TP
0.41
0.53
38.10 44.45
0.407 0.482
1.27
6.35
0.74
1.14
0.712 0.863
2.54
1.27
0.25.
45°TP
Notes
6
7
7
7
7
7
3
9
4
10
6
NOTES:
1. Dimensions are in inches. Lead 1 is emitter, lead 2 is base, and lead 3 is collector.
2. Metric equivalents are given for general information only.
3. Symbol TL is measured from HD maximum.
4. Details of outline in this zone are optional.
5. Symbol CD shall not vary more than 0.010 inch (0.25 mm) in zone P. This zone is controlled for
automatic handling.
6. Leads at gauge plane 0.054 inch (1.37 mm) +0.001 inch (0.03 mm) - 0.000 inch (0.00 mm) below
seating plane shall be within 0.007 inch (0.18 mm) radius of TP relative to tab. Device may be
measured by direct methods or by gauge.
7. Symbol LU applies between L1 and L2. Dimension LD applies between L2 and LL minimum.
8. Lead number three is electrically connected to case.
9. Beyond r maximum, TW shall be held for a minimum length of .011 inch (0.28 mm).
10. Symbol r applied to both inside corners of tab.
11. In accordance with ANSI Y14.5M, diameters are equivalent to φx symbology
FIGURE 2. Physical dimensions, 2N5662 and 2N5663, (similar to TO-5) – Continued.
6
MIL-PRF-19500/454D
2.3. Order of precedence. In the event of a conflict between the text of this document and the references cited
herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws
and regulations unless a specific exemption has been obtained.
3. REQUIREMENTS
3.1. General. The requirements for acquiring the product described herein shall consist of this document and
MIL-PRF-19500.
3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a
manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer's list (QML)
before contract award (see 4.2 and 6.3).
3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as
specified in MIL-PRF-19500.
3.4 Interface requirements and physical dimensions. The Interface requirements and physical dimensions shall
be as specified in MIL-PRF-19500, figure 1, (similar to TO-66) and figure 2, (similar to T0-5), herein.
3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein.
Where a choice of finish is desired, it shall be specified in the contract or purchase order (see 6.2).
3.5 Marking. Marking shall be in accordance with MIL-PRF-19500.
3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance
characteristics are as specified in paragraph 1.3, 1.4, and table I.
3.7 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table I
herein.
3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and
shall be free from other defects that will affect life, serviceability, or appearance.
4. VERIFICATION
4.1 Classification of inspections. The inspection requirements specified herein are classified as follows:
a. Qualification inspection (see 4.2).
b. Screening (see 4.3).
c. Conformance inspection (see 4.4).
4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500, and as
specified herein.
7
MIL-PRF-19500/454D
4.3 Screening (JANTX and JANTXV levels). Screening shall be in accordance with MIL-PRF-19500 (table IV),
and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that
exceed the limits of table I herein shall not be acceptable.
Screen (see table IV
of MIL-PRF-19500)
Measurement
JANTX JANTXV levels
(1)
Thermal response (see 4.3.2)
9
ICES1
11
ICES1 and hFE2; ∆ICES1 = 100 percent of initial
value or 20 nA, dc whichever is greater
12
See 4.3.1
13
Subgroup 2 of table I herein;
∆ICES1 = 100 percent of initial value or 20 nA
dc; ∆hFE = ±25 percent of initial value.
(1) This test shall be performed anytime before screen 9.
4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: VCB = 10 Vdc. Power shall be applied
to achieve TJ =135°C minimum using a minimum PD = 75% of PT maximum rated as defined in 1.3.
4.3.2 Thermal response (∆VBE measurements). The ∆VBE measurements shall be performed in accordance with
MIL-STD-750, method 3131. The ∆VBE conditions (IH and VH) and maximum limit VBE shall be derived by each
vendor. The chosen ∆VBE measurement and conditions for each device in the qualification lot shall be submitted in
the qualification report and a thermal response curve shall be plotted, read, and measurements recorded. The
chosen ∆VBE shall be considered final after the manufacturer has had the opportunity to test five consecutive lots.
The following parameter measurements shall apply:
a.
IM measurement..................................................... 10 mA.
b.
VCE measurement voltage..................................... 10 V (same as VH).
c.
IH collector heating current..................................... 1.0 A (minimum).
d.
VH collector-emitter heating voltage....................... 10 V (minimum).
e.
tH heating time ...................................................... 10 ms (TO-5).
...................................................... 25 ms (TO-66).
f. tMD measurement delay time........................................ 50 µs to 80 µs.
8
MIL-PRF-19500/454D
4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500, and as
specified herein.
4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500, and table I
herein. Electrical measurements (end-points) shall be in accordance with the applicable inspections of table I, group
A, subgroup 2 herein.
4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified
below. Electrical measurements (end-points) and delta requirements JAN, JANTX, and JANTXV shall be after each
step and shall be in accordance with group A, subgroup 2 and table III herein. Separate samples may be used for
each step. In the event of a group B failure, the manufacturer may pull a new sample at double size from either the
failed assembly lot or from another assembly lot from the same wafer lot. If the new “assembly lot” option is
exercised, the failed assembly lot shall be scrapped.
4.4.2.1 Group B inspection herein, (JAN, JANTX, and JANTXV).
Step
Method
Condition
1
1039
Steady-state life: Test condition B, 340 hours, VCE = 10 percent of stated
VCEO (see 1.3), TJ = 175°C min. No heat sink or forced-air cooling on the
devices shall be permitted. n = 45 devices, c = 0
2
1039
The steady-state life test of step 1 shall be extended to 1,000 hours for
each die design. Samples shall be selected from a wafer lot every twelve
months of wafer production, however, group B shall not be required more
than once for any single wafer lot. n = 45, c = 0.
3
1032
High-temperature life (non-operating), TA = +200°C. n = 22, c = 0.
4.4.2.2 Group B sample selection. Samples selected from group B inspection shall meet all of the following
requirements:
a.
For JAN, JANTX, and JANTXV samples shall be selected randomly from a minimum of three wafers
(or from each wafer in the lot) from each wafer lot. See MIL-PRF-19500.
b.
Must be chosen from an inspection lot that has been submitted to and passed group A, subgroup 2,
conformance inspection. When the final lead finish is solder or any plating prone to oxidation at high
temperature, the samples for life test (group B for JAN, JANTX, and JANTXV) may be pulled prior to
the application of final lead finish.
4.4.3 Group C inspection, Group C inspection shall be conducted in accordance with the conditions specified for
subgroup testing in table VII of MIL-PRF-19500, 4.4.3.1 (JAN, JANTX, and JANTXV) herein for group C testing.
Electrical measurements (end points) and delta requirements shall be in accordance with group A, subgroup 2 and
table III herein.
4.4.3.1 Group C inspection, table VII (JAN, JANTX, and JANTXV) of MIL-PRF-19500.
Subgroup
Method
Condition
C2
2036
Test condition A (tension) for 2N5660 and 2N5661; weight = 3 pounds; t =
15s.
C2
2036
Test condition E (lead fatigue) for 2N5662 and 2N5663.
C6
Not applicable.
9
MIL-PRF-19500/454D
4.4.3.2 Group C sample selection. Samples for subgroups in group C shall be chosen at random from any lot
containing the intended package type and lead finish procured to the same specification which is submitted to and
passes group A tests for conformance inspection. Testing of a subgroup using a single device type enclosed in the
intended package type shall be considered as complying with the requirements for that subgroup.
4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for
subgroup testing in table IX of MIL-PRF-19500, and table II herein. Electrical measurements (end-points) and delta
requirements shall be in accordance with the applicable steps of table III herein.
4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.
4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750.
4.5.2 Thermal resistance. Thermal resistance measurements shall be conducted in accordance with method
3131 of MIL-STD-750. The following details shall apply:
a.
Collector current magnitude during power application shall be 0.5 A dc for 2N5660 and 2N5661, and 0.4 A
dc for 2N5662 and 2N5663.
b.
Collector to emitter voltage magnitude shall be 20 V dc.
c.
Reference temperature measuring point shall be the case.
d.
Reference point temperature shall be +25°C ≤ TR ≤ +75°C and recorded before the test is started.
e.
Mounting arrangement shall be with heat sink to header.
f.
Maximum limit of RθJC shall be 5°C/W for 2N5660 and 2N5661, and 6.67°C/W for 2N5662 and 2N5663.
10
MIL-PRF-19500/454D
TABLE I. Group A inspection.
Inspection 1/
MIL-STD-750
Method
Limits
Symbol
Conditions
Min
Unit
Max
Subgroup 1 2/
Visual and mechanical
Examination
2071
n = 45 devices, c = 0
Solderability 3/
2026
n = 15 leads, c = 0
Resistance to solvent
3/ 4/
1022
n = 15 leads, c = 0
Temp cycling 3/
1051
Test condition C, 25 cycles.
n = 22 devices, c = 0
Heremetic seal
1071
n = 22 devices, c = 0
Fine leak
Gross leak
Electrical measurements
Bond strength 3/
Group A, subgroup 2
2037
Precondition TA = +250°C
at t = 24 hrs or
TA = +300°C at t = 2 hrs,
n = 11 wires, c = 0
3011
Pulsed (see 4.5.1)
IC = 10 mA dc, bias condition D
Subgroup 2
Breakdown voltage,
Collector to emitter
V(BR)CEO
2N5660, 2N5662
2N5661, 2N5663
Breakdown voltage,
Collector to base
200
300
3011
2N5660, 2N5662
2N5661, 2N5663
Breakdown voltage,
Emitter to base
V dc
3026
Bias condition D,
IC = 10 mA dc, pulsed (see
4.5.1),
RBE = 100 ohms
V(BR)CER
Bias condition D,
IE = 10 µA dc
V(BR)EBO
See footnotes at end of table.
11
V dc
250
400
6
V dc
MIL-PRF-19500/454D
TABLE I. Group A inspection - Continued.
Inspection 1/
MIL-STD-750
Method
Symbol
Conditions
Limits
Min
Unit
Max
Subgroup 2 – Continued
Collector to emitter
cutoff current
3041
2N5660, 2N5662
2N5661, 2N5663
Collector to base
cutoff current
Bias condition C
ICES1
VCE = 200 V dc
VCE = 300 V dc
3036
Bias condition D
0.2
0.2
µA dc
µA dc
ICBO
250 v
2N5660, 2N5662
VCB = 200 V dc
VCB = 250 V dc
0.1
1.0
µA dc
mA dc
400 v
2N5661, 2N5663
VCB = 300 V dc
VCB = 400 V dc
0.1
1.0
µA dc
mA dc
Base emitter voltage
(saturated)
3066
Test condition A,
pulsed (see 4.5.1),
IC = 1 A dc, IB = 0.1 A dc
VBE(sat1)
1.2
V dc
Base emitter voltage
(saturated)
3066
Test condition A,
pulsed (see 4.5.1),
IC = 2 A dc, IB = 0.4 A dc
VBE(sat2
1.5
V dc
Collector to emitter
Voltage (saturated)
3071
Pulsed (see 4.5.1),
IC = 1 A dc, IB = 0.1 A dc
VCE(sat1
0.4
V dc
Collector to emitter
Voltage (saturated)
3071
Pulsed (see 4.5.1),
IC = 2 A dc, IB = 0.4 A dc
VCE(sat2)
0.8
V dc
Forward current
Transfer ratio
3076
VCE = 2.0 V dc,
IC = 50 mA dc,
pulsed (see 4.5.1)
hFE1
VCE = 5.0 V dc,
IC = 0.5 A dc,
pulsed (see 4.5.1)
hFE2
2N5660, 2N5662
2N5661, 2N5663
Forward current
Transfer ratio
2N5660, 2N5662
2N5661, 2N5663
3076
See footnotes at end of table.
12
40
25
40
25
120
75
MIL-PRF-19500/454D
TABLE I. Group A inspection - Continued.
Inspection 1/
MIL-STD-750
Method
Symbol
Conditions
Limits
Min
Unit
Max
Subgroup 2 – Continued
Forward current
Transfer ratio
3076
VCE = 5.0 V dc,
IC = 1 A dc,
pulsed (see 4.5.1)
hFE3
15
Forward current
transfer ratio
3076
VCE = 5.0 V dc,
IC = 2 A dc,
pulsed (see 4.5.1)
hFE4
5
Subgroup 3
High temperature
operation:
Collector to emitter
cutoff current
TA = +150°C
3041
2N5660, 2N5662
2N5661, 2N5663
ICES2
100
100
VCE = 200 V dc
VCE = 300 V dc
Low temperature
operation:
Forward current
transfer ratio
Bias condition C
µA dc
µA dc
TA = -55°C
3076
VCE = 5.0 V dc,
IC = 0.5 A dc,
pulsed (see 4.5.1)
hFE5
2N5660, 2N5662
2N5661, 2N5663
15
10
Subgroup 4
Small-signal shortcircuit forwardcurrent transfer ratio
3306
VCE = 5 V dc, IC = 0.1 A dc,
f = 10 MHz
|hfe|
3251
Test condition A,
VCC = 100 V dc, IC = 0.5 A dc
ton
2
7
Pulse response
Turn-on time
2N5660, 2N5662
2N5661, 2N5663
0.25
0.25
See figure 3
See figure 4
See footnotes at end of table.
13
µs
µs
MIL-PRF-19500/454D
TABLE I. Group A inspection - Continued.
Inspection 1/
MIL-STD-750
Method
Symbol
Conditions
Limits
Min
Unit
Max
Subgroup 4– Continued
Turn-off time
3251
2N5660, 2N5662
2N5661, 2N5663
Open circuit output
capacitance
Test condition A,
VCC = 100 V dc, IC = 0.5 A dc
See figure 3
See figure 4
3236
VCB = 10 V dc, IE = 0,
100 kHz ≤ f ≤ 1 MHz
3051
TC = +100°C, power application
time ≥ 1 second, 1 cycle,
tr + tf = 10 µs, (2N5660 and
2N5661, see figure 5, 2N5662 and
2N5663, see figure 6)
Subgroup 5
Safe operating area
(continuous dc)
toff
Test 1
2N5660, 2N5661
2N5662, 2N5663
VCE = 10 V dc, IC = 2 A dc
VCE = 7.5 V dc, IC = 2 A dc
Test 2
2N5660, 2N5661
2N5662, 2N5663
VCE = 40 V dc, IC = 500 mA dc
VCE = 25 V dc, IC = 600 mA dc
Test 3
2N5660
2N5662
VCE = 200 V dc, IC = 36 mA dc
VCE = 200 V dc, IC = 27 mA dc
Test 4
2N5661
2N5663
VCE = 300 V dc, IC = 19 mA dc
VCE = 300 V dc, IC = 14 mA dc
See footnotes at end of table.
14
Cobo
0.85
1.2
µs
µs
45
pF
MIL-PRF-19500/454D
TABLE I. Group A inspection - Continued.
Inspection 1/
MIL-STD-750
Method
Conditions
Symbol
Limits
Min
Max
Subgroup 5– Continued
Safe operating area
(clamped inductive)
TC = +100°C, tr + tf ≤ 10 µs
duty cycle ≤ 2 percent,
IC = 2 A dc, tp ≈ 4 ms,
VCE = 25 V dc (see figures 7 and
8)
2N5660, 2N5662
2N5661, 2N5663
Clamp voltage = 200, +0, -5 V dc
Clamp voltage = 300, +0, -5 V dc
Electrical measurements
1/
2/
3/
4/
See table I, subgroup 2 herein.
For sampling plan, see MIL-PRF-19500.
For resubmission of failed subgroup A1, double the sample size of the failed test or sequence of tests.
Separate samples may be used.
Not required for laser marked devices.
15
Unit
MIL-PRF-19500/454D
TABLE II. Group E inspection (all quality levels) for qualification only.
MIL-STD-750
Inspection
Method
Conditions
22 devices, c = 0
Subgroup 1
Thermal shock
(temperature
cycling)
Qualification
conformance
inspection
1051
500 cycles, condition D
See table I, subgroup 2
Electrical measurements
22 devices, c = 0
Subgroup 2
Steady-state dc
blocking life
1039
or
1049
Electrical measurements
Condition A, 500 hours
See table I, subgroup 2, ICBO test only
at VCBO maximum rating (see 1.3).
Subgroup 3
Not applicable
22 devices, c = 0
Subgroup 4
Thermal resistance
3131
RθJC = 5°C/W for 2N5660 and 2N5661
maximum, RθJC = 6.67°C/W for
2N5662
and 2N5663 maximum (see 4.5.2)
15 devices, c = 0
Subgroup 5
Barometric pressure
(reduced)
Electrical measurements
1001
Normal mounting pressure = 8 mm Hg
±2 mm Hg for 60 s (minimum)
See table I, subgroup 2
16
MIL-PRF-19500/454D
TABLE III. Groups B delta measurements. 1/
Step
Inspection 1/
MIL-STD-750
Method
1.
Collector to emitter
cutoff current
3041
2N5660, 2N5662
2N5661, 2N5663
Symbol
Conditions
Bias condition C
Limits
Min
Unit
Max
∆ICES1
100 percent of initial
value or 20 nA dc,
whichever is greater.
VCE = 200 V dc
VCE = 300 V dc
2.
Forward current
transfer ratio
3076
VCE = 5 V dc,
IC = 0.5 A dc,
pulsed (see 4.5.1)
∆hFE2
±25 percent change in
initial recorded value.
3.
Thermal resistance
3131
See 4.5.2
∆RθJC
°C/W
1/ The delta measurements for 4.4.2 are as follows:
Step 1, see table III, steps 1, 2 and 3.
Step 2, see table III, steps 1, 2 and 3.
Step 3, see table III, steps 1 and 2.
17
MIL-PRF-19500/454D
NOTES:
1. The input waveform is supplied by a pulse generator with the following characteristics:
tr ≤ 15 ns, tf ≤ 15 ns, ZOUT = 50 Ω, PW = 10 µs, duty cycle ≤ 2 percent.
2. Output waveforms are monitored on an oscilloscope with the following characteristics:
tr ≤ 1 ns, ZIN ≥ 10 MΩ, CIN ≤ 11.5 pF.
3. Resistors shall be noninductive types.
4. The dc power supplies may require additional bypassing in order to minimize ringing.
5. The input pulse voltages, -4 V dc and +100 V dc, are nominal and shall be adjusted to
obtain IB1 = -IB2 = 15 mA dc.
6. The 0.01 µF capacitor may be removed for current adjustment only.
FIGURE 3. Pulse response test circuit for types 2N5660 and 2N5662.
18
MIL-PRF-19500/454D
NOTES:
1. The input waveform is supplied by a pulse generator with the following characteristics:
tr ≤ 15 ns, tf ≤ 15 ns, ZOUT = 50 Ω, PW = 10 µs, duty cycle ≤ 2 percent.
2. Output waveforms are monitored on an oscilloscope with the following characteristics:
tr ≤ 1 ns, ZIN ≥ 10 MΩ, CIN ≤ 11.5 pF.
3. Resistors shall be noninductive types.
4. The dc power supplies may require additional by = passing in order to minimize ringing.
5. The input pulse voltages, -4 V dc and +100 V dc, are nominal and shall be adjusted to obtain
IB1 = -IB2 = 25 mA dc.
6. The 0.01 µF capacitor may be removed for current adjustment only.
FIGURE 4. Pulse response test circuit for types 2N5661 and 2N5663.
19
MIL-PRF-19500/454D
FIGURE 5. Maximum operating area graph (continuous dc) for types 2N5660 and 2N5661.
20
MIL-PRF-19500/454D
FIGURE 6. Maximum operating area graph (continuous dc) for types 2N5662 and 2N5663.
21
MIL-PRF-19500/454D
FIGURE 7. Safe operating area for switching between saturation and cutoff - (clamped inductive load).
22
MIL-PRF-19500/454D
NOTE: 40 mH (triad C-48U, or equivalent)
Procedure:
1. With switch S1 closed, set the specified test conditions.
2. Open S1. Device fails if clamp voltage is not reached.
3. Perform specified end-point tests.
FIGURE 8. Clamped inductive sweep test circuit.
23
MIL-PRF-19500/454D
5. PACKAGING
5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or
order (see 6.2). When actual packaging of materiel is to be performed by DoD personnel, these personnel need to
contact the responsible packaging activity to ascertain requisite packaging requirements. Packaging requirements
are maintained by the Inventory Control Points' packaging activity within the Military Department or Defense Agency,
or within the Military Departments' System Command. Packaging data retrieval is available from the managing
Military Departments' or Defense Agency's automated packaging files, CD-ROM products, or by contacting the
responsible packaging activity.
6. NOTES
(This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.)
6.1 Notes. The notes specified in MIL-PRF-19500 are applicable to this specification.
6.2 Acquisition requirements. Acquisition documents must specify the following:
a.
Title, number, and date of this specification.
b.
Issue of DoDISS to be cited in the solicitation and if required, the specific issue of individual documents
referenced (see 2.2.1).
c.
The lead finish or material as specified (see 3.4.1).
d.
Type designation and quality assurance level.
e.
Packaging requirements (see 5.1).
6.3 Substitution information. Devices covered by this specification are substitutable for the manufacturer's and
user's PIN. This information in no way implies that manufacturer's PIN’s are suitable as a substitute for the Part or
Identifying Number (PIN). The term PIN is equivalent to the term (part number, identification number, and type
designator) which was previously used in this specification.
6.4 Qualification. With respect to products requiring qualification, awards will be made only for products which
are, at the time of award of contract, qualified for inclusion in Qualified Manufacturer's List (QML) whether or not
such products have actually been so listed by that date. The attention of the contractors is called to these
requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the Federal
Government tested for qualification in order that they may be eligible to be awarded contracts or orders for the
products covered by this specification. Information pertaining to qualification of products may be obtained from
Defense Supply Center, Columbus, ATTN: DSCC-VQE, P.O. Box 3990, Columbus, OH 43216-5000.
6.5 Changes from previous issue. Marginal notations are not used in this revision to identify changes with respect
to the previous issue due to the extensiveness of the changes.
Custodians:
Army - CR
Navy - NW
Air Force - 11
NASA - NA
DLA - CC
Preparing activity:
DLA - CC
(Project 5961-2385)
Review activities:
Army - AR, MI, SM
Navy - AS, MC, OS
Air Force – 19
24
STANDARDIZATION DOCUMENT IMPROVEMENT PROPOSAL
INSTRUCTIONS
1. The preparing activity must complete blocks 1, 2, 3, and 8. In block 1, both the document number and revision
letter should be given.
2. The submitter of this form must complete blocks 4, 5, 6, and 7.
3. The preparing activity must provide a reply within 30 days from receipt of the form.
NOTE: This form may not be used to request copies of documents, nor to request waivers, or clarification of requirements on
current contracts. Comments submitted on this form do not constitute or imply authorization to waive any portion of the
referenced document(s) or to amend contractual requirements.
I RECOMMEND A CHANGE:
1. DOCUMENT NUMBER
MIL-PRF-19500/454D
2. DOCUMENT DATE
010727
3. DOCUMENT TITLE
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER TYPE: 2N5660, 2N5661, 2N5662, AND 2N5663, JAN,
JANTX, JANTXV
4. NATURE OF CHANGE (Identify paragraph number and include proposed rewrite, if possible. Attach extra sheets as needed.)
5. REASON FOR RECOMMENDATION
6. SUBMITTER
a. NAME (Last, First, Middle initial)
c. ADDRESS (Include Zip Code)
b. ORGANIZATION
d. TELEPHONE (Include Area Code)
COMMERCIAL
DSN
FAX
EMAIL
7. DATE SUBMITTED
8. PREPARING ACTIVITY
a. Point of Contact
Alan Barone
c. ADDRESS
Defense Supply Center, Columbus
ATTN: DSCC-VAC, P.O. Box 3990
Columbus, OH 43216-5000
DD Form 1426, Feb 1999 (EG)
b. TELEPHONE
Commercial
DSN
FAX
EMAIL
614-692-0510
850-0510
614-692-6939
[email protected]
IF YOU DO NOT RECEIVE A REPLY WITHIN 45 DAYS, CONTACT:
Defense Standardization Program Office (DLSC-LM)
8725 John J. Kingman, Suite 2533, Fort Belvoir, VA 22060-6221
Telephone (703) 767-6888 DSN 427-6888
Previous editions are obsolete
WHS/DIOR, Feb 99