ETC OP65ARC/883

Transistor
2SB0970 (2SB970)
Silicon PNP epitaxial planer type
For low-voltage output amplification
Unit: mm
0.40+0.10
ñ0.05
0.4±0.2
5°
1.50+0.25
-0.05
Low collector to emitter saturation voltage VCE(sat).
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
2
1
(0.65)
●
2.8+0.2
-0.3
3
■ Features
●
0.16+0.10
-0.06
(0.95) (0.95)
1.9±0.1
2.90+0.20
-0.05
(Ta=25˚C)
Symbol
Ratings
Unit
Collector to base voltage
VCBO
–15
V
Collector to emitter voltage
VCEO
–10
V
Emitter to base voltage
VEBO
–7
V
Peak collector current
ICP
–1
A
Collector current
IC
– 0.5
A
Collector power dissipation
PC
200
mW
Junction temperature
Tj
150
˚C
Storage temperature
Tstg
–55 ~ +150
˚C
■ Electrical Characteristics
1.1+0.3
-0.1
Parameter
1.1+0.2
-0.1
10°
0 to 0.1
■ Absolute Maximum Ratings
1:Base
2:Emitter
3:Collector
EIAJ:SC–59
Mini3-G1 Package
Marking symbol :
1R
(Ta=25˚C)
Parameter
Symbol
Conditions
min
typ
max
Unit
–100
nA
Collector cutoff current
ICBO
VCB = –10V, IE = 0
Collector to base voltage
VCBO
IC = –10µA, IE = 0
–15
V
Collector to emitter voltage
VCEO
IC = –1mA, IB = 0
–10
V
Emitter to base voltage
VEBO
IE = –10µA, IC = 0
–7
hFE1*1
VCE = –2V, IC = –0.5A*2
130
hFE2
VCE = –2V, IC = –1A*2
60
Collector to emitter saturation voltage
VCE(sat)
IC = –0.4A, IB = –8mA
– 0.16
– 0.3
Base to emitter saturation voltage
VBE(sat)
IC = –0.4A, IB = –8mA
– 0.8
–1.2
Transition frequency
fT
VCB = –10V, IE = 50mA, f = 200MHz
130
Collector output capacitance
Cob
VCB = –10V, IE = 0, f = 1MHz
22
Forward current transfer ratio
V
350
FE1
V
MHz
pF
*2
*1h
V
Pulse measurement
Rank classification
Rank
R
S
hFE1
130 ~ 220
180 ~ 350
Marking Symbol
1RR
1RS
Note.) The Part number in the Parenthesis shows conventional
part number.
214
2SB0970
Transistor
PC — Ta
IC — VCE
–1.0
IB=–10mA
– 0.8
–9mA
–8mA
–7mA
200
160
120
–6mA
–5mA
– 0.6
80
–4mA
–3mA
– 0.4
40
–2mA
– 0.2
–1mA
0
20
40
60
80 100 120 140 160
0
Ambient temperature Ta (˚C)
–1
–2
25˚C
–1
–10
–3
–1
Ta=75˚C
25˚C
–25˚C
–1
–3
–10
Collector current IC (A)
Ta=–25˚C
75˚C
– 0.03
– 0.01
– 0.01 – 0.03 – 0.1 – 0.3
200
500
300
–3
–10
fT — I E
VCB=–10V
Ta=25˚C
180
400
–1
Collector current IC (A)
VCE=–2V
Forward current transfer ratio hFE
–30
– 0.01
– 0.01 – 0.03 – 0.1 – 0.3
–6
–3
– 0.1
600
IC/IB=50
– 0.03
–5
–10
hFE — IC
–100
– 0.1
–4
–30
Collector to emitter voltage VCE (V)
VCE(sat) — IC
– 0.3
–3
IC/IB=50
– 0.3
Transition frequency fT (MHz)
0
Base to emitter saturation voltage VBE(sat) (V)
–100
Ta=25˚C
0
Collector to emitter saturation voltage VCE(sat) (V)
VBE(sat) — IC
–1.2
Collector current IC (A)
Collector power dissipation PC (mW)
240
Ta=75˚C
25˚C
–25˚C
200
100
160
140
120
100
80
60
40
20
0
– 0.01 – 0.03 – 0.1 – 0.3
0
–1
–3
Collector current IC (A)
–10
1
3
10
30
100
Emitter current IE (mA)
Cob — VCB
Collector output capacitance Cob (pF)
80
IE=0
f=1MHz
Ta=25˚C
70
60
50
40
30
20
10
0
–1
–3
–10
–30
–100
Collector to base voltage VCB (V)
215
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2001 MAR