Transistor 2SB0970 (2SB970) Silicon PNP epitaxial planer type For low-voltage output amplification Unit: mm 0.40+0.10 ñ0.05 0.4±0.2 5° 1.50+0.25 -0.05 Low collector to emitter saturation voltage VCE(sat). Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 2 1 (0.65) ● 2.8+0.2 -0.3 3 ■ Features ● 0.16+0.10 -0.06 (0.95) (0.95) 1.9±0.1 2.90+0.20 -0.05 (Ta=25˚C) Symbol Ratings Unit Collector to base voltage VCBO –15 V Collector to emitter voltage VCEO –10 V Emitter to base voltage VEBO –7 V Peak collector current ICP –1 A Collector current IC – 0.5 A Collector power dissipation PC 200 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C ■ Electrical Characteristics 1.1+0.3 -0.1 Parameter 1.1+0.2 -0.1 10° 0 to 0.1 ■ Absolute Maximum Ratings 1:Base 2:Emitter 3:Collector EIAJ:SC–59 Mini3-G1 Package Marking symbol : 1R (Ta=25˚C) Parameter Symbol Conditions min typ max Unit –100 nA Collector cutoff current ICBO VCB = –10V, IE = 0 Collector to base voltage VCBO IC = –10µA, IE = 0 –15 V Collector to emitter voltage VCEO IC = –1mA, IB = 0 –10 V Emitter to base voltage VEBO IE = –10µA, IC = 0 –7 hFE1*1 VCE = –2V, IC = –0.5A*2 130 hFE2 VCE = –2V, IC = –1A*2 60 Collector to emitter saturation voltage VCE(sat) IC = –0.4A, IB = –8mA – 0.16 – 0.3 Base to emitter saturation voltage VBE(sat) IC = –0.4A, IB = –8mA – 0.8 –1.2 Transition frequency fT VCB = –10V, IE = 50mA, f = 200MHz 130 Collector output capacitance Cob VCB = –10V, IE = 0, f = 1MHz 22 Forward current transfer ratio V 350 FE1 V MHz pF *2 *1h V Pulse measurement Rank classification Rank R S hFE1 130 ~ 220 180 ~ 350 Marking Symbol 1RR 1RS Note.) The Part number in the Parenthesis shows conventional part number. 214 2SB0970 Transistor PC — Ta IC — VCE –1.0 IB=–10mA – 0.8 –9mA –8mA –7mA 200 160 120 –6mA –5mA – 0.6 80 –4mA –3mA – 0.4 40 –2mA – 0.2 –1mA 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) –1 –2 25˚C –1 –10 –3 –1 Ta=75˚C 25˚C –25˚C –1 –3 –10 Collector current IC (A) Ta=–25˚C 75˚C – 0.03 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 200 500 300 –3 –10 fT — I E VCB=–10V Ta=25˚C 180 400 –1 Collector current IC (A) VCE=–2V Forward current transfer ratio hFE –30 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 –6 –3 – 0.1 600 IC/IB=50 – 0.03 –5 –10 hFE — IC –100 – 0.1 –4 –30 Collector to emitter voltage VCE (V) VCE(sat) — IC – 0.3 –3 IC/IB=50 – 0.3 Transition frequency fT (MHz) 0 Base to emitter saturation voltage VBE(sat) (V) –100 Ta=25˚C 0 Collector to emitter saturation voltage VCE(sat) (V) VBE(sat) — IC –1.2 Collector current IC (A) Collector power dissipation PC (mW) 240 Ta=75˚C 25˚C –25˚C 200 100 160 140 120 100 80 60 40 20 0 – 0.01 – 0.03 – 0.1 – 0.3 0 –1 –3 Collector current IC (A) –10 1 3 10 30 100 Emitter current IE (mA) Cob — VCB Collector output capacitance Cob (pF) 80 IE=0 f=1MHz Ta=25˚C 70 60 50 40 30 20 10 0 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) 215 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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