ETC 2SD1328S

Transistor
2SD1328
Silicon NPN epitaxial planer type
For low-voltage output amplification
For muting
For DC-DC converter
Unit: mm
+0.2
2.8 –0.3
+0.25
0.65±0.15
1.5 –0.05
0.65±0.15
+0.1
+0.2
1.45
0.95
0.4 –0.05
2.9 –0.05
3
2
Symbol
Ratings
Unit
VCBO
25
V
Collector to emitter voltage
VCEO
20
V
Emitter to base voltage
VEBO
12
V
Peak collector current
ICP
1
A
Collector current
IC
0.5
A
Collector power dissipation
PC
200
mW
Junction temperature
Tj
150
˚C
Storage temperature
Tstg
–55 ~ +150
˚C
+0.1
0.1 to 0.3
0.4±0.2
1:Base
2:Emitter
3:Collector
0 to 0.1
Parameter
0.16 –0.06
(Ta=25˚C)
Collector to base voltage
■ Electrical Characteristics
1
0.8
■ Absolute Maximum Ratings
1.9±0.2
●
Low collector to emitter saturation voltage VCE(sat).
Low ON resistance Ron.
High foward current transfer ratio hFE.
+0.2
●
1.1 –0.1
●
0.95
■ Features
JEDEC:TO–236
EIAJ:SC–59
Mini Type Package
Marking symbol : 1D
(Ta=25˚C)
Parameter
Symbol
Conditions
min
typ
VCB = 25V, IE = 0
max
Unit
100
nA
Collector cutoff current
ICBO
Collector to base voltage
VCBO
IC = 10µA, IE = 0
25
V
Collector to emitter voltage
VCEO
IC = 1mA, IB = 0
20
V
Emitter to base voltage
VEBO
IE = 10µA, IC = 0
12
Forward current transfer ratio
hFE*1
VCE = 2V, IC = 0.5A*2
200
Collector to emitter saturation voltage
VCE(sat)
IC = 0.5A, IB = 20mA*2
Base to emitter saturation voltage
VBE(sat)
IC = 0.5A, IB = 50mA*2
Transition frequency
fT
VCB = 10V, IE = –50mA, f = 200MHz
200
MHz
Collector output capacitance
Cob
VCB = 10V, IE = 0, f = 1MHz
10
pF
ON resistanse
Ron*3
V
800
0.13
FE
V
1.2
V
Ω
1.0
*2
*1h
0.4
*3R
on
Rank classification
Pulse measurement
Measurement circuit
1kΩ
Rank
R
S
T
hFE
200 ~ 350
300 ~ 500
400 ~ 800
Marking Symbol
1DR
1DS
1DT
IB=1mA
VB
Ron=
VV
VA
f=1kHz
V=0.3V
VB
✕1000(Ω)
VA–VB
1
Transistor
2SD1328
PC — Ta
IC — VCE
200
120
80
40
3.0mA
0.8
2.5mA
2.0mA
0.6
1.5mA
0.4
1.0mA
0.5mA
0.2
0
20
40
60
80 100 120 140 160
0
Ambient temperature Ta (˚C)
1
2
4
5
6
30
3
25˚C
Ta=–25˚C
75˚C
0.3
0.1
0.03
0.3
1
3
10
Collector current IC (A)
IE=0
Ta=25˚C
f=1MHz
20
16
12
8
4
0
1
3
10
3
1
Ta=75˚C
0.3
25˚C
0.1
–25˚C
0.03
0.01
0.01 0.03
30
100
Collector to base voltage VCB (V)
0.1
0.3
800
Ta=75˚C
600
1
3
10
400
VCB=10V
Ta=25˚C
VCE=2V
25˚C
–25˚C
400
200
350
300
250
200
150
100
50
0
0.01 0.03
0.1
0.3
1
3
Collector current IC (A)
Cob — VCB
24
10
fT — I E
1000
10
0.1
30
Collector current IC (A)
1200
Forward current transfer ratio hFE
IC/IB=10
0.01
0.01 0.03
IC/IB=25
hFE — IC
100
1
100
Collector to emitter voltage VCE (V)
VBE(sat) — IC
Base to emitter saturation voltage VBE(sat) (V)
3
Transition frequency fT (MHz)
0
Collector output capacitance Cob (pF)
Ta=25˚C
3.5mA
1.0
160
Collector to emitter saturation voltage VCE(sat) (V)
IB=4.0mA
0
2
VCE(sat) — IC
1.2
Collector current IC (A)
Collector power dissipation PC (mW)
240
10
0
–1
–3
–10
–30
Emitter current IE (A)
–100
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2001 MAR