HM 65756 MATRA MHS 32 K × 8 High Speed CMOS SRAM Introduction The HM 65756 is a high speed CMOS static RAM organised as 32,768 × 8 bits. It is manufactured using MHS’s high performance CMOS technology. Easy memory expansion is provided by an active low chip select (CS) an active low output enable (OE), and three state drivers. Access time as fast as 15 ns are available with maximum power consumption of only 880 mW. All inputs or outputs of the HM-65756 are TTL compatible and operate from single 5 V supply thus simplifying system design. The HM 65756 features fully static operation requiring no external clocks or timing strobes. The automatic power-down feature reduces the power consumption by 80 % when the circuit is deselected. For military application the HM 65756 is processed according to the methods of the latest revision of the MIL STD 883. Features Fast access time Commercial : 15/20/25/35/45 ns Industrial : 20/25/35/45 ns Automotive/military : 25/35/45 ns Low power consumption Active : 880 mW Standby : 220 mW Wide temperature range : – 55°C to + 125°C 300 and 600 mils width package TTL compatible inputs and outputs Asynchronous Capable of withstanding greater than 2 000 V electrostatic discharge Output enable Single 5 volt supply 3.3 v versions are also available. please consult sales Interface Block Diagram Rev. C (11/04/95) 1 HM 65756 MATRA MHS Pin Configuration Pin Names Truth Table A0–A14: Address inputs CS : Chip-select I/00–I/07 : Inputs/Outputs OE : Output enable VCC : Power W : Write Enable GND : Ground CS OE W INPUT/OUTPUT MODE H X X Z Deselect/ Power down L L H Output Read L X L Input Write L H H Z Output Disable L = Low, H = High, X = H or L, Z = High impedance. Electrical Characteristics Absolute Maximum Ratings Supply voltage to GND potential : . . . . . . . . . . . . . . . –0.5 V to +7.0 V DC input voltage : . . . . . . . . . . . . . . . . . . . . . . . . . . . –3.0 V to +7.0 V DC output voltage in high Z state : . . . . . . . . . . . . . . –0.5 V to +7.0 V Storage temperature : . . . . . . . . . . . . . . . . . . . . . . . . –65°C to +150°C Output current into outputs (low) : . . . . . . . . . . . . . . . . . . . . . . . 20 mA Electro Static Discharge Voltage . . . . . . . . . . . . . . . . . . . . . . > 2000 V (MIL STD 883 METHOD 3015) Operating Range OPERATING VOLTAGE OPERATING TEMPERATURE Military (– 2) 5 V ± 10 % – 55_C to + 125_C Automotive (– A) 5 V ± 10 % – 40_C to + 125_C Industrial (– 9) 5 V ± 10 % – 40_C to + 85_C Commercial (– 5) 5 V ± 10 % – 0_C to + 70_C DC Operating Conditions PARAMETER 2 DESCRIPTION MINIMUM TYPICAL MAXIMUM UNIT 4.5 5.0 5.5 V Vcc Supply Voltage Gnd Ground 0.0 0.0 0.0 V VIL Input low voltage – 0.3 0.0 0.8 V VIH Input high voltage 2.2 – VCC V Rev. C (11/04/95) HM 65756 MATRA MHS DC Parameters PARAMETER IIX (2) IOZ (2) DESCRIPTION MINIMUM TYPICAL MAXIMUM UNIT Input leakage current – 10.0 – 10.0 µA Output leakage current – 10.0 – 10.0 µA IOS (3) Output short circuit current – – – 300.0 mA VOL (4) Output low voltage – – 0.4 V VOH (5) Output high voltage 2.4 – – V Note : 2. Gnd < Vin < Vcc, Gnd < Vout < Vcc Output disabled. 3. Vcc = max, Vout = Gnd, duration of the short circuit should not exceed 30 seconds. Not more than 1 output should be shorted at one time. 4. Vcc min, IOL = 8.0 mA. 5. Vcc min, IOH = –4.0 mA. Consumption for Commercial (–5) Specification SYMBOL PARAMETER 65756 E–5 65756 F–5 65756 H–5 65756 K–5 65756 M–5 UNIT VALUE ICCSB (6) Standby supply current 30 40 35 35 35 mA max ICCSB1 (7) Standby supply current 10 20 20 20 20 mA max ICCOP (8) Dynamic operating current 155 160 160 150 150 mA max Consumption for Automotive (–A), Industrial (–9) and Military (–2) Specification SYMBOL PARAMETER 65756 F–9 65756 H–9/–2 /–A 65756 K–9/–2 /–A 65756 M–9/–2 /–A UNIT VALUE ICCSB (6) Standby supply current 40 35 35 35 mA max ICCSB1 (7) Standby supply current 20 20 20 20 mA max ICCOP (8) Dynamic operating current 170 170 160 160 mA max Note : 6. CS ≥ VIH, a pull-up resistor to Vcc on the CS is required to keep the device unselected during the Vcc power-up. Otherwise IccSB will exceed the above values. Min duty cycle = 100 %. 7. CS ≥ VCC – 0.3 V, VIN – 0.3 V or VIN ≤ 0.3 V. 8. VCC max, Output current = 0 mA, f = max, Vin = Vcc or Gnd. Capacitance PARAMETER DESCRIPTION MINIMUM TYPICAL MAXIMUM UNIT Cin (1) Input capacitance – – 5 pF Cout (1) Output capacitance – – 7 pF Note : 1. TA = 25°C, f = 1 MHz, Vcc = 5.0 V, these parameters are not tested. Rev. C (11/04/95) 3 HM 65756 MATRA MHS AC Parameters Input pulse levels : . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Gnd to 3.0 V Input rise : . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ≤ 5 ns Input timing reference levels : . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5 V Output loading IOL/IOH (see figure 1a and 1b) : . . . . . . . . . . . +30 pF AC Test Loads and Waveforms Figure 1 a Figure 1 b Figure 2 Write Cycle Specification : Automotive, Commercial, Industrial and Military (note 9) SYMBOL PARAMETER 65756 E–5 65756 F–5/–9 65756 H–5–9/ –2/–A 65756 K–5/–9/ –2/–A 65756 M–5/–9/ –2/–A UNIT VALUE TAVAV Write cycle time 15 20 25 35 45 ns min TAVWL Address set–up time 0 0 0 0 0 ns min TAVWH Address Valid to write end 10 15 20 30 40 ns min TDVWH Data set–up time 9 10 15 17 20 ns min TELWH CS low to write end 10 15 20 (*) 30 40 ns min TWLQZ(8) Write low to high Z 7 10 13 15 20 ns max TWLWH Write pulse width 9 15 20 (*) 25 30 ns min TWHAX Address hold from write end 0 0 0 0 0 ns min TWHDX Data hold time 0 0 0 0 0 ns min Write high to low Z 3 3 3 3 3 ns min TWHQX Note : 4 (8) 8. Specified with CL = 5 pF (see figure 1b). (*) For commercial (–5) and PDIL, package value is 16 ns. Rev. C (11/04/95) MATRA MHS HM 65756 Write Cycle 1 : W Controlled (note 9) Write Cycle 2 : CS controlled (note 9) Note : 9. The internal write of the memory is defined by the overlap of CS LOW and W LOW to initiate a write and either signal can terminate a write by going HIGH. The data input setup and hold timing should be referenced to rising edge of the signal that terminates the write. Data out will be high impedance if OE = VIH. Rev. C (11/04/95) 5 HM 65756 MATRA MHS Read Cycle Specification : Automotive, Commercial, Industrial and Military SYMBOL PARAMETER 65756 E–5 65756 F–5/–9 65756 H–5–9/ –2/–A 65756 K–5/–9 –2/–A 65756 M–5/–9 –2/–A UNIT VALUE TAVAV Read cycle time 15 20 25 35 45 ns min TAVQV Address access time 15 20 25 35 45 ns max TAVQX (10) Address valid to low Z 3 3 3 3 3 ns min TELQV Chip–select access time 15 20 25 35 45 ns max TELQX (10) CS low to low Z 3 3 3 3 3 ns min TEHQZ (10) CS high to high Z 7 10 13 15 20 ns max TELIC CS low to power up 0 0 0 0 0 ns min TEHICL CS high to power down 15 20 20 20 25 ns max TGLQV Output Enable access time 7 10 15 20 20 ns max TGLQX (10) OE low to low Z 0 0 3 3 3 ns min TGHQZ (10) OE high to high Z 7 10 13 15 20 ns max Note : 10. Specified with CL = 5 pF (see figure 1b). Read Cycle 1 (note 11, 12, 13) Read Cycle 2 (note 11, 13) Notes : 11. W is high for read cycle. 12. Device is continuously selected, CS = VIL, OE = VIL. 13. Address valid prior or coincident with CS transition low. 6 Rev. C (11/04/95) HM 65756 MATRA MHS Ordering Information R RD 32 K × 8 speed static RAM 0 – Chip form 1 – Ceramic 28 pins 300 mils 1E – Ceramic 28 pins 600 mils 3 – Plastic 28 pins 300 mils 3E – Plastic 28 pins 600 mils 4J – LCC 32 pins 4P – LCC 28 pins T– SOIC 28 pins 300 mils U – SOJ 28 pins E = 15 ns* F = 20 ns H = 25 ns K = 35 ns M = 45 ns N = 55 ns –5 –9 –2 –8 –A R RD : : : : : : Tape & Reel option : Tape & Reel/Dry pack Commercial Industrial Military Military with B.I Automotive : Tape & Reel option : Tape & Reel/Dry pack option * available in commercial range on PDIL.3 (code 3) and SOJ (code U). For other package please consult your sales office. The information contained herein is subject to change without notice. No responsibility is assumed by MATRA MHS SA for using this publication and/or circuits described herein : nor for any possible infringements of patents or other rights of third parties which may result from its use. Rev. C (11/04/95) 7