ALPHA AO4886

AO4886
100V Dual N-Channel MOSFET
General Description
Product Summary
VDS
The AO4886 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON).This device is ideal for boost
converters and synchronous rectifiers for consumer,
telecom, industrial power supplies and LED backlighting.
100V
3.3A
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
< 80mΩ
RDS(ON) (at VGS = 4.5V)
< 91mΩ
100% UIS Tested
100% Rg Tested
SOIC-8
Top View
D1
D2
Bottom View
Top View
S2
G2
S1
G1
1
2
3
4
D2
D2
D1
D1
8
7
6
5
G1
G2
S1
S2
Pin1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TA=25°C
Continuous Drain
Current
C
Units
V
±20
V
3.3
ID
TA=70°C
Maximum
100
2.7
A
IDM
17
Avalanche Current C
IAS, IAR
14
A
Avalanche energy L=0.1mH C
TA=25°C
EAS, EAR
10
mJ
Pulsed Drain Current
Power Dissipation B
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
Rev 0: Sep 2010
2.00
PD
TA=70°C
TJ, TSTG
Symbol
t ≤ 10s
Steady-State
Steady-State
W
1.28
RθJA
RθJL
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-55 to 150
Typ
48
74
32
°C
Max
62.5
90
40
Units
°C/W
°C/W
°C/W
Page 1 of 6
AO4886
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
100
Max
1
TJ=55°C
µA
5
Gate-Body leakage current
VDS=0V, VGS= ±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
1.6
ID(ON)
On state drain current
VGS=10V, VDS=5V
17
Units
V
VDS=100V, VGS=0V
IGSS
±100
nA
2.2
2.7
V
63.5
80
122
152
VGS=4.5V, ID=3A
70
91
mΩ
1
V
2.5
A
VGS=10V, ID=3A
RDS(ON)
Typ
Static Drain-Source On-Resistance
TJ=125°C
A
gFS
Forward Transconductance
VDS=5V, ID=3A
20
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.74
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
Ciss
mΩ
S
620
778
942
pF
VGS=0V, VDS=50V, f=1MHz
38
55
81
pF
13
24
35
pF
VGS=0V, VDS=0V, f=1MHz
0.7
1.45
2.2
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
13
16.3
20
nC
Qg(4.5V) Total Gate Charge
6.4
8.1
10
nC
2.2
2.8
3.4
nC
2.4
4.1
5.8
nC
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
VGS=10V, VDS=50V, ID=3A
VGS=10V, VDS=50V, RL=16.7Ω,
RGEN=3Ω
6
ns
2.5
ns
21
ns
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=3A, dI/dt=500A/µs
14
2.4
21
28
ns
Qrr
Body Diode Reverse Recovery Charge IF=3A, dI/dt=500A/µs
65
94
123
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: Sep 2010
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Page 2 of 6
AO4886
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
20
20
10V
VDS=5V
4.5V
15
3.5V
ID(A)
ID (A)
15
10
5
10
125°C
5
VGS=3V
25°C
0
0
0
1
2
3
4
5
0
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
2
3
4
5
6
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
2.8
Normalized On-Resistance
100
90
RDS(ON) (mΩ
Ω)
1
VGS=4.5V
80
70
VGS=10V
60
2.4
VGS=10V
ID=3A
2
17
5
VGS=4.5V
ID=3A 2
10
1.6
1.2
0.8
50
0
0
5
10
15
20
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
200
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)
150
1.0E+02
ID=3A
1.0E+01
130
40
125°C
125°C
110
IS (A)
RDS(ON) (mΩ
Ω)
1.0E+00
90
1.0E-01
1.0E-02
25°C
1.0E-03
25°C
70
1.0E-04
1.0E-05
50
2
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 0: Sep 2010
4
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0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
AO4886
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
1200
1000
VDS=50V
ID=3A
Ciss
Capacitance (pF)
VGS (Volts)
8
6
4
2
800
600
400
200
0
Coss
0
0
5
10
15
Qg (nC)
Figure 7: Gate-Charge Characteristics
20
0
100.0
100.0
20
40
60
80
VDS (Volts)
Figure 8: Capacitance Characteristics
100
RDS(ON)
limited
TA=100°C
10.0
10µs
TA=25°C
ID (Amps)
IAR (A) Peak Avalanche Current
Crss
10.0
TA=125°C
1.0
100µs
1ms
TA=150°C
0.1
TJ(Max)=150°C
TA=25°C
10ms
DC
10s
0.0
1.0
1
0.1
10
100
1000
Time in avalanche, tA (µ
µs)
Figure 9: Single Pulse Avalanche capability (Note C)
1
10
100
VDS (Volts)
Figure 10: Maximum Forward Biased
Safe Operating Area (Note F)
10000
TA=25°C
Power (W)
1000
100
10
1
1E-05
0.001
0.1
10
1000
Pulse Width (s)
Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F)
Rev 0: Sep 2010
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Page 4 of 6
AO4886
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=90°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 0: Sep 2010
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Page 5 of 6
AO4886
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds Isd
Vgs
Ig
Rev 0: Sep 2010
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 6 of 6