AO4486 100V N-Channel MOSFET General Description Product Summary The AO4486 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. VDS 100V 4.2A ID (at VGS=10V) RDS(ON) (at VGS=10V) < 79mΩ RDS(ON) (at VGS = 4.5V) < 90mΩ 100% UIS Tested 100% Rg Tested SOIC-8 D Top View D Bottom View D D D G G S S S S Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter Drain-Source Voltage VDS Gate-Source Voltage VGS TA=25°C Continuous Drain Current C Units V ±20 V 4.2 ID TA=70°C Maximum 100 3.4 A IDM 31 Avalanche Current C IAS, IAR 14 A Avalanche energy L=0.1mH C TA=25°C EAS, EAR 10 mJ Pulsed Drain Current Power Dissipation B Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev 0: Sep 2010 3.1 PD TA=70°C TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State W 2 RθJA RθJL -55 to 150 Typ 31 59 16 °C Max 40 75 24 Units °C/W °C/W °C/W Page 1 of 6 AO4486 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V 100 1 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.6 ID(ON) On state drain current VGS=10V, VDS=5V 31 TJ=55°C TJ=125°C VGS=4.5V, ID=3A ±100 nA 2.2 2.7 V 62.5 79 121 151 68.5 90 mΩ 1 V 3.5 A A gFS Forward Transconductance VDS=5V, ID=3A 20 VSD Diode Forward Voltage IS=1A,VGS=0V 0.74 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Units µA 5 VGS=10V, ID=3A Static Drain-Source On-Resistance Max V VDS=100V, VGS=0V IDSS RDS(ON) Typ mΩ S 620 778 942 pF VGS=0V, VDS=50V, f=1MHz 38 55 81 pF 13 24 35 pF VGS=0V, VDS=0V, f=1MHz 0.7 1.45 2.2 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 13 16.3 20 nC Qg(4.5V) Total Gate Charge 6.4 8.1 10 nC 2.2 2.8 3.4 nC 2.4 4.1 5.8 nC Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Qgs Gate Source Charge Qgd Gate Drain Charge VGS=10V, VDS=50V, ID=3.0A tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=3A, dI/dt=500A/µs 14 21 28 Qrr Body Diode Reverse Recovery Charge IF=3A, dI/dt=500A/µs 65 94 123 VGS=10V, VDS=50V, RL=16.7Ω, RGEN=3Ω 6 ns 2.5 ns 21 ns 2.4 ns ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 0: Sep 2010 Page 2 of 6 AO4486 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 20 20 10V VDS=5V 4.5V 15 3.5V ID(A) ID (A) 15 10 5 10 125°C 5 VGS=3V 25°C 0 0 0 1 2 3 4 5 0 VDS (Volts) Fig 1: On-Region Characteristics (Note E) 2 3 4 5 6 VGS(Volts) Figure 2: Transfer Characteristics (Note E) 2.8 90 VGS=4.5V 80 70 VGS=10V 60 Normalized On-Resistance 100 RDS(ON) (mΩ Ω) 1 2.4 VGS=10V ID=3A 2 17 5 VGS=4.5V ID=3A 2 10 1.6 1.2 0.8 50 0 0 5 10 15 20 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 200 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 150 1.0E+02 ID=3A 1.0E+01 130 40 125°C 110 90 25°C 70 IS (A) RDS(ON) (mΩ Ω) 1.0E+00 125°C 1.0E-01 1.0E-02 25°C 1.0E-03 1.0E-04 1.0E-05 50 2 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 0: Sep 2010 4 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AO4486 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1200 10 1000 VDS=50V ID=3A Ciss Capacitance (pF) VGS (Volts) 8 6 4 2 800 600 400 200 0 Coss 0 0 5 10 15 Qg (nC) Figure 7: Gate-Charge Characteristics 0 20 20 40 60 80 VDS (Volts) Figure 8: Capacitance Characteristics 100 100.0 100.0 TA=100°C TA=25°C 10.0 TA=125°C 10µs RDS(ON) limited 10.0 100µs ID (Amps) IAR (A) Peak Avalanche Current Crss 1.0 1ms 0.1 TA=150°C 10ms TJ(Max)=150°C TA=25°C DC 10s 0.0 1.0 1 0.1 10 100 1000 Time in avalanche, tA (µ µs) Figure 9: Single Pulse Avalanche capability (Note C) 1 10 100 VDS (Volts) Figure 10: Maximum Forward Biased Safe Operating Area (Note F) 10000 TA=25°C Power (W) 1000 100 10 1 1E-05 0.001 0.1 10 1000 Pulse Width (s) Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F) Rev 0: Sep 2010 Page 4 of 6 AO4486 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=75°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 12: Normalized Maximum Transient Thermal Impedance (Note F) Rev 0: Sep 2010 Page 5 of 6 AO4486 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig Rev 0: Sep 2010 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds Page 6 of 6