Shenzhen SI Semiconductors Co., LTD. Product Specification MJE13001 MJE SERIES TRANSISTORS FEATURES APPLICATION: HIGH VOLTAGE CAPABILITY HIGH SPEED SWITCHING FLUORESCENT LAMP ELECTRONIC BALLAST Absolute Maximum Ratings TC=25°C TO-92 PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 500 V Collector-Emitter Voltage VCEO 400 V Emitter- Base Voltage VEBO 9 V Collector Current IC 0.3 A Total Power Dissipation PC 7 W Junction Temperature Tj 150 °C Storage Temperature Tstg -65-150 °C Electronic Characteristics WIDE SOA Tc=25°C CHARACTERISTICS SYMBOL TEST CONDITION Collector-Base Cutoff Current ICBO VCB=500V 100 A Collector-Emitter Cutoff Current ICEO VCE=400V,IB=0 250 A Collector-Emitter Voltage VCEO IC=10mA,IB=0 400 V Emitter- Base Voltage VEBO IE=1mA,IC=0 9 V Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain Vces VBES hFE Storage Time tS Falling Time tf Si semiconductors 2004.10 MIN MAX IC=0.05A, ,IB=0.01A 0.5 IC=0.1A,IB=0.02A 1.0 IC=0.3A,IB=0.1A 3.0 IC=0.1A,IB=0.02A 1.5 VCE=5V,IC=1mA 8 VCE=5V,IC=20mA 10 VCE=5V,IC=200mA 8 VCC=250V, IC=5IB IB1= -IB2=0.04A UNIT V V 40 2.0 0.8 µS 1 Shenzhen SI Semiconductors Co., LTD. Product Specification MJE13001 MJE SERIES TRANSISTORS Ic(A) 1 SOA (DC) Pc % Tj 120 100 80 0.1 IS/B 60 Ptot 40 0.01 20 0.001 1 100 10 hFE 100 Vce(V) 0 0 1000 hFE - Ic 100 50 hFE Tj=25 Tj=25 Tj= − 40 Tj= − 40 10 Vce=1.5V 1 0.001 10 Tj( ) 200 hFE - Ic Vce=5V 0.01 Vces(v) 150 Tj=125 Tj=125 10 100 Ic(A) 0.1 1 1 0.001 Vces - Ic 1.4 0.01 Vbes(v) 0.1 1 Tj= − 40 1.2 Tj=125 1 Vbes - Ic hFE=5 hFE=5 Ic(A) Tj=25 Tj=125 1 Tj= − 40 Tj=25 0.8 0.6 0.1 0.4 0.2 0.01 0.01 Si semiconductors 0.1 2004.10 Ic(A) 1 0 0.01 Ic(A) 0.1 1 2 Shenzhen SI Semiconductors Co., LTD. Product Specification TO-92 MECHANICAL DATA UNIT SYMBOL min nom A 4.3 b 0.3 c 0.3 D D 4.3 5.2 d 1.0 1.7 E 3.2 4.2 2.54 e1 1.27 12.7 L1 Si semiconductors max 5.3 e L mm 2.0 2004.10 3