Shenzhen SI Semiconductors Co., LTD. Product Specification MJE13009L MJE LOW VOLTAGE SERIES TRANSISTORS FEATURES APPLICATION: HIGH VOLTAGE CAPABILITY HIGH SPEED SWITCHING SUITABLE FOR 110V CIRCUIT MODE ELECTRONIC BALLAST FLUORESCENT LAMP ELECTRONIC TRANSFORMER Absolute Maximum Ratings Tc=25°C SWITCH MODE POWER SUPPLY TO-220 PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 400 V Collector-Emitter Voltage VCEO 200 V Emitter- Base Voltage VEBO 9 V Collector Current IC 20 A Total Power Dissipation PC 80 W Junction Temperature Tj 150 °C Storage Temperature Tstg -65-150 °C Electronic Characteristics WIDE SOA Tc=25°C CHARACTERISTICS SYMBOL TEST CONDITION Collector-Base Cutoff Current ICBO VCB=400V 100 A Collector-Emitter Cutoff Current ICEO VCE=200V,IB=0 250 A Collector-Emitter Voltage VCEO IC=10mA,IB=0 200 V Emitter -Base Voltage VEBO IE=1mA,IC=0 9 V Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Vbes hFE DC Current Gain Si semiconductors Vces 2004.10 MIN MAX IC=2.0A,IB=0.4A 0.5 IC=8.0A,IB=1.6A 1.0 IC=12.0A,IB=3.0A 2.0 IC=5.0A,IB=1.0A 1.5 VCE=5V,IC=10 mA 8 VCE=5V,IC=2.0 A 10 VCE=5V,IC=15.0 A 5 UNIT V V 40 1 Shenzhen SI Semiconductors Co., LTD. Product Specification MJE13009L MJE LOW VOLTAGE SERIES TRANSISTORS SOA (DC) 100 Tj Pc % Ic(A) 120 100 10 80 IS/B 60 1 Ptot 40 0.1 20 0.01 1 100 10 Vce(V) 1000 100 0 hFE - Ic hFE 100 50 Tj=125 Tj=25 Tj=25 10 Vce=1.5V 1 0.01 10 150 Tj( ) 200 Tj= − 40 Vce=5V 0.1 1 10 Ic(A) 100 1 0.01 Vces - Ic Vces(v) 100 hFE - Ic hFE Tj=125 Tj= − 40 10 0 10 hFE=5 0.1 Vbes(v) 1 10 Ic(A) 100 Vbes - Ic hFE=5 Tj=125 Tj= − 40 1 Tj=25 Tj=25 1 Tj= − 40 0.1 Tj=125 0.01 0.01 0.1 Si semiconductors 1 2004.10 10 Ic(A) 100 0.1 0.01 0.1 1 10 Ic(A) 100 2 Shenzhen SI Semiconductors Co., LTD. Product Specification TO-220 MECHANICAL DATA UNIT mm SYMBOL min A 3.5 max SYMBOL 4.8 e B 2.4 F 1.1 1.4 B1 1.8 L 12.5 14.5 b nom 0.6 b1 c 1.2 5.9 E Si semiconductors nom max 2.54 L1 3.5 L2 6.3 P 0.4 D D1 min 2004.10 16.5 Q 2.5 3.1 6.9 Q1 2.0 2.8 10.7 Z 3.0 3