ETC A94

CHINA GUANGDONG DONGGUAN HAROM ELECTRONICS CO., LTD
TO-92 Plastic-Encapsulate Transistors
A94
TRANSISTOR (PNP)
FEATURES
TO-92
High voltage
www.haorm.cn
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
-400
V
VCEO
Collector-Emitter Voltage
-400
V
VEBO
-5
V
IC
Emitter-Base Voltage
Collector Current -Continuous
-0.2
A
PC
Collector Power Dissipation
0.625
W
Tj
Junction Temperature
150
Storage Temperature
℃
Tstg
-55 to +150
℃
1. EMITTER
2. BASE
3. COLLECTOR
1 2 3
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR) CBO
IC= -100μA, IE=0
-400
V
Collector-emitter breakdown voltage
V(BR) CEO
IC= -1mA,IB=0
-400
V
Emitter-base breakdown voltage
V(BR) EBO
IE=-100μA,IC=0
-5
V
Collector cut-off current
ICBO
VCB=-400V, IE=0
-0.1
μA
Collector cut-off current
ICEO
VCE=-400V, IB=0
-5
μA
Emitter cut-off current
IEBO
VEB= -4V, IC=0
-0.1
μA
hFE(1)
VCE=-10V, IC=-10mA
80
hFE(2)
VCE=-10V, IC=-1mA
70
hFE(3)
VCE=-10V, IC=-100mA
60
DC current gain
300
VCE (sat)
IC=-10mA, IB=-1mA
-0.2
V
VCE (sat)
IC=-50mA, IB=-5mA
-0.3
V
VBE (sat)
IC=-10mA, IB= -1mA
-0.75
V
fT
VCE=-20V, IC=-10mA
f =30MHz
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
50
MHz