PH480 High Linearity InGaP HBT Amplifier Features Applications 1500MHz - 3000MHz Mobile Infrastructure 15.0 dB Gain at 1950MHz PCS, WCDMA, WiBro +27 dBm P1dB W-LAN / ISM +44 dBm Output IP3 RFID / Fixed Wireless Functional Diagram 4 3 2 1 Single Voltage Supply Function Pin No. Lead-free Lead free / Green / RoHSRoHS RF IN 1 compliant SOT-89 Package RF OUT / Bias 3 Ground 2,4 Description The PH480 is a high performance InGaP HBT MMIC Amplifier and high linearity driver amplifier in a high quality SOT-89 package. The device features excellent Input and output return loss, highly linear performance. The y matched to obtain optimum p p y The p g power and linearity. product is targeted for use as driver device can be easily amplifier for wireless infrastructure applications. The PH480 operates from a single +5.0 voltage supply and have an internal active bias. All devices are 100% RF and DC tested Specifications Symbol Parameters Units S21 Gain dB S11 Input Return Loss dB S22 Output Return Loss dB Freq. Min. Typ. 1950 MHz MH 15 2 15.2 2140 MHz 14.6 1950 MHz -13 2140 MHz -14 1950 MHz -12 12 2140 MHz -13 1950 MHz 27.0 compression 2140 MHz 27.0 Output p Third Order 1950 MHz 44 2140 MHz 43 1950 MHz 3.3 2140 MHz 3.3 Output Power @1dB P1dB dBm OIP3 dBm intercept NF Noise Figure dB V/I Device voltage / current V/mA Rth Thermal Resistance °C/W Tj Junction Temperature °C Max. 5.0/130 Test Conditions : T=25°C, Supply Voltage=+5V, 50ohm System, OIP3 measured with two tones at an output power of +9dBm/tone separated by 1MHz. http://www.prewell.com Preliminary Data Sheet 1 Jan 2009 PH480 High Linearity InGaP HBT Amplifier 1950 MHz Application Circuit Vcc Vcc = +5.0V C7 C8 C9 C4 C5 C6 RF_IN C5 20pF C4 1uF C6 0.5pF RF_OUT L1 18nH 18 H L1 C2 C3 C1 11 9 7 5 3 L1 R1 3 C10 5 7 9 RF IN 11 C3 1.0pF C1 C2 RF OUT C11 20pF www.Prewell.com C10 1.8pF 20pF C11 1.8pF Test Board Information : FR4 PCB (Dielectric Constant = 4.6, thick = 0.8mm(32mil)) RF Microstrip Line Width = 1.2mm(47mil), Tuning Via Diameter (‘R1’,’R2’,’R3’, ‘L1’,’L2’,’ L3’,etc.) and Distance = 0.5mm(20mil) All Passive Component Size is 1608(0603) and L1 is Ceramic inductor 20 1950 MHz S21 : Gain 15.4 dB S11 : Input Return Loss -14 dB Gain vs. Frequency 18 Gain(dB) Frequency S22 : Output Return Loss -13 dB Output P1dB +27 dBm Output IP3 @9dBm +44.0 dBm N i Figure Noise Fi 3 3 dB 3.3 16 14 o 12 10 1850 +25 C o -40 C o +85 C 1900 1950 2000 Supply Voltage 5V Current 130 mA 2050 Frequency(MHz) Input Return Loss 0 Output Return Loss 0 32 P1dB vs. Frequency -10 -10 -15 +25 C o -40 C o +85 C -15 30 P1dB(dBm) -5 S22(dB) S11(dB) o -5 28 26 o o +25 C o -40 C o +85 C -20 -25 1850 1900 1950 2000 -20 -25 1850 2050 1900 o +9dBm/tone, +25 C 1900 40 1950 2000 2050 Frequency(MHz) 6 46 5 44 4 NF(dB) OIP3(dBm) OIP3(dBm) 22 1850 2050 Freq=1950MHz, +9dBm/tone 48 45 30 1850 2000 OIP3 vs. Temperature Output IP3 vs. Frequency 35 1950 Frequency(MHz) Frequency(MHz) q y( ) 50 +25 C o -40 C o +85 C 24 42 Noise Figure vs. Frequency 3 o +25 C o -40 C o +85 C 1900 40 2 38 -40 1 1850 o +25 C 1950 Frequency(MHz) 2000 2050 -20 0 20 40 o Temperature( C) 60 80 1900 1950 2000 2050 Frequency(MHz) http://www.prewell.com Preliminary Data Sheet 2 Jan 2009 PH480 High Linearity InGaP HBT Amplifier 2140 MHz Application Circuit Vcc = +5.0V Vcc C7 C8 C9 C4 C5 C6 RF_IN C5 20pF C4 1uF C6 0.5pF RF_OUT L1 22nH 22 H L1 C2 C3 C1 11 9 7 5 3 L1 R1 C10 3 5 7 9 RF IN 11 C3 0.75pF C1 C2 RF OUT C11 20pF www.Prewell.com C10 1.2pF 20pF C11 1.5pF Test Board Information : FR4 PCB (Dielectric Constant = 4.6, thick = 0.8mm(32mil)) RF Microstrip Line Width = 1.2mm(47mil), Tuning Via Diameter (‘R1’,’R2’,’R3’, ‘L1’,’L2’,’ L3’,etc.) and Distance = 0.5mm(20mil) All Passive Component Size is 1608(0603) and L1 is Ceramic inductor 20 2140 MHz S21 : Gain 14.8 dB S11 : Input Return Loss -16 dB Gain vs. Frequency 18 Gain(dB) Frequency S22 : Output Return Loss -14 dB Output P1dB +27.2 dBm Output IP3 @9dBm +43 dBm N i Figure Noise Fi 3 3 dB 3.3 16 14 o 12 10 2050 +25 C o -40 C o +85 C 2100 2150 2200 Supply Voltage 5V Current 130 mA 2250 Frequency(MHz) 0 Input Return Loss Output Return Loss 0 32 P1dB vs. Frequency -10 -10 -15 +25 C o -40 C o +85 C -15 30 P1dB(dBm) -5 S22(dB) S11(dB) o -5 28 26 o o +25 C o -40 C o +85 C -20 -25 2050 2100 2150 -20 2200 -25 2050 2250 2100 Frequency(MHz) +9dBm/tone, +25 C 22 2050 2250 2100 6 44 5 42 4 NF(dB) OIP3(dBm) 40 2150 2200 2250 Frequency(MHz) Freq=2140MHz, +9dBm/tone 46 45 OIP3(dBm) 2200 OIP3 vs. Temperature o 40 Noise Figure vs. Frequency 3 o +25 C o -40 C o +85 C 35 30 2050 2150 Frequency(MHz) Output IP3 vs. Frequency 50 +25 C o -40 C o +85 C 24 2100 2150 Frequency(MHz) 2200 2250 38 2 36 -40 1 2050 o +25 C -20 0 20 40 o Temperature( C) 60 80 2100 2150 2200 2250 Frequency(MHz) http://www.prewell.com Preliminary Data Sheet 3 Jan 2009 PH480 High Linearity InGaP HBT Amplifier Absolute Maximum Ratings Parameter Rating Unit Supply Voltage +6 V Supply Current 200 mA RF Power Input 12 dBm Storage Temperature -55 to +125 °C Ambient Operating Temperature -40 to +85 °C Operation of this device above any of these parameters may cause permanent damage. Lead-free /RoHS Compliant / Green SOT-89 Package Outline ESD / MSL Ratings 1. ESD sensitive device. Observe Handling Precautions. 2. ESD Rating : Class 1C(Passes at 1000V min.) Human Body Model (HBM), JESD22-A114 3. ESD Rating : Class IV (Passes at 1000V min.) Charged Device Model (CDM), JESD22-C101 4. MSL (Moisture Sensitive Level) Rating : Level 3 at +260°C Convection reflow, J-STD-020 Mounting Instructions Evaluation Board Layout (4x4) 1. Use a large ground pad area with many plated through-holes as shown. 2. We recommend 1 oz copper minimum. 3. Measurement for our data sheet was made on 0.8mm thick FR-4 Board. 4. Add as much copper as possible to inner and outer l layers near the h part to ensure optimal i l thermal h l performance. 5. RF trace width depends on the board material and construction. 6. Add mounting screws near the part to fasten the board to a heatsink. http://www.prewell.com Preliminary Data Sheet 4 Jan 2009