PW110 InGaP HBT Gain Block Features Functional Diagram Applications DC - 1000MHz Broadband Gain Block 26 dB Gain at 200MHz Mobile Infrastructure +19 dBm P1dB IF Amplifier +34 dBm Output IP3 CATV / DBS Single Voltage Supply RFID / Fixed Wireless 4 3 2 1 Lead-free / Green / RoHScompliant SOT-89 Package Function Pin No. RF IN 1 RF OUT / Bias 3 Ground 2,4 Description The PW110 is a high performance InGaP HBT MMIC Amplifier and consists of Darlington pair amplifiers. The amplifier features high linear performance, wideband operation, and high reliability. The PW110 operates from a single voltage supply and requires only two DC-blocking capacitors, a bias resistor and an inductor for operation. The device is a general purpose buffer amplifier that offers high dynamic range in a low cost surface-mountable plastic SOT-89 packages. Specifications Symbol S21 S11 Parameters Gain Input Return Loss S22 Output Return Loss P1dB Output Power @1dB compression OIP3 Output Third Order intercept Units Freq. Min. Typ. dB 75 MHz 200 MHz 500 MHz 900 MHz 26 26 25 23.5 dB 75 MHz 200 MHz 500 MHz 900 MHz -13 -15 -16 -16 dB 75 MHz 200 MHz 500 MHz 900 MHz -14 -18 -14 -12 dBm 75 MHz 200 MHz 500 MHz 900 MHz 18.9 18.9 18.8 18.8 dBm 75 MHz 200 MHz 500 MHz 900 MHz 34 33.5 33 32 75 MHz 200 MHz 500 MHz 900 MHz 1.7 1.7 1.8 1.9 NF Noise Figure dB V/I Device voltage / current V/mA 4.74/68 Rth Thermal Resistance °C/W 94 Tj Junction Temperature °C 120 Max. Test Conditions : T=25°C, Supply Voltage=+8V, Rbias=47ohm, 50ohm System, OIP3 measured with two tones at an output power of +3dBm/tone separated by 1MHz. http://www.prewell.com 1 December 2006 PW110 InGaP HBT Gain Block Typical RF Performance for 200MHz Tuned Application Circuit Supply Bias Voltage = 8V, R(bias)=47 ohm, Current= 68mA Frequency MHz 75 200 500 700 900 S21 dB 26.1 26.2 25.5 24.9 24.2 S11 dB -13 -15 -16 -17 -18 S22 dB -14 -18 -14 -12 -10 P1dB dBm 18.9 18.9 18.8 18.4 17.9 OIP3 dBm 34.3 33.8 33.1 32.6 31.9 Noise Figure dB 1.7 1.7 1.8 1.8 1.8 Gain vs. Frequency Input Return Loss S11(dB) 25 20 15 0.0 0 -5 -5 -10 -10 -15 o +25 C o -40 C o +85 C 0.4 0.6 0.8 -25 0.0 1.0 0.4 0.6 0.8 -25 0.0 1.0 Output IP3 vs. Frequency 20 30 15 1 o +25 C o -40 C o +85 C o +25 C 0 0.0 5 0.6 0.8 1.0 0.2 Frequency (GHz) 0.4 0.6 0.8 Output Power / Gain vs. Input Power @ 0.2GHz OutPut Power(dBm)/ Gain(dB) 1.0 0.2 0.4 0.6 0.8 1.0 Frequency (GHz) Frequency (GHz) Output Power / Gain vs. Input Power @ 0.9GHz 30 30 25 20 15 10 5 -20 1.0 2 10 20 0.8 NF vs. Frequency 3 o +25 C o +85 C o -40 C 0.6 NF(dB) P1dB(dBm) 35 0.4 Frequency (GHz) P1dB vs. Frequency 25 0.4 0.2 Frequency (GHz) 40 0.2 +25 C o -40 C o +85 C -20 0.2 Frequency (GHz) OIP3(dBm) o +25 C o -40 C o +85 C -20 0.2 25 -15 o OutPut Power(dBm)/ Gain(dB) Gain(dB) 30 Output Return Loss 0 S22(dB) 35 Gain Output Power -15 -10 -5 0 25 20 15 10 5 -20 5 Input Power(dBm) Gain Output Power -15 -10 -5 0 5 Input Power(dBm) http://www.prewell.com 2 December 2006 PW110 InGaP HBT Gain Block 200MHz Tuned Application Circuit Recommended Bias Values Supply Voltage Supply Voltage R bias Value Size 7V 32 Ω 1210 8V 47 Ω 1210 9V 62 Ω 2010 10 V 75 Ω 2010 12 V 107 Ω 2512 R Bias 1uF 10nF 820nH RF IN RF OUT 10nF 10nF Typical RF Performance for 500 - 900MHz Tuned Application Circuit Supply Bias Voltage = 8V, R(bias)= 47 ohm, Current= 69mA Frequency MHz 500 700 900 S21 : Gain dB 24.8 24.3 23.6 S11 : Input Return Loss dB -15 -16 -16 S22 : Output Return Loss dB -18 -15 -12 Output P1dB dBm 19.4 19.5 18.8 Output IP3 @3dBm dBm 32.8 32.6 32.0 Noise Figure dB 1.9 1.9 1.9 Gain vs. Frequency Supply Voltage 30 1uF 25 Gain(dB) R Bias 56nH RF IN 56pF RF OUT 20 15 o +25 C 56pF 10 400 56pF 500 600 700 800 900 1000 Frequency(MHz) Output Return Loss 0 -5 -5 -10 -10 S22(dB) S11(dB) Input Return Loss 0 -15 -20 -15 -20 o +25 C o +25 C -25 400 500 600 700 800 900 -25 400 1000 500 600 700 800 900 1000 Frequency(MHz) Frequency(MHz) http://www.prewell.com 3 December 2006 PW110 InGaP HBT Gain Block Absolute Maximum Ratings Parameter Rating Unit Supply Voltage +8 V Supply Current 200 mA RF Power Input 10 dBm Storage Temperature -55 to +125 °C Ambient Operating Temperature -40 to +85 °C Operation of this device above any of these parameters may cause permanent damage. Lead-free /RoHS Compliant / Green SOT-89 Package Outline ESD / MSL Ratings 1. ESD sensitive device. Observe Handling Precautions. 2. ESD Rating : Class 2(Passes at 2000V min.) Human Body Model (HBM), JESD22-A114 3. ESD Rating : Class IV (Passes at 1000V min.) Charged Device Model (CDM), JESD22-C101 4. MSL (Moisture Sensitive Level) Rating : Level 3 at +260°C Convection reflow, J-STD-020 Evaluation Board Layout (4x4) Mounting Instructions 1. Use a large ground pad area with many plated through-holes as shown. 2. We recommend 1 oz copper minimum. 3. Measurement for our data sheet was made on 0.8mm thick FR-4 Board. 4. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 5. RF trace width depends on the board material and construction. 6. Add mounting screws near the part to fasten the board to a heatsink. http://www.prewell.com 4 December 2006