SKT250 Line Thyristor STUD VERSION L iu j in g re ct i f ie r c o . , L t d . FEATURES TYPICAL APPLICATIONS 1). Hermetic metal case with ceramic insulator 2). Threaded stud ISO M24×1.5 3). High i2t and ITSM values for easy fusing 4). International standard case 1). DC motor control (e.g. for machine tools) 2). Controlled rectifiers (e.g. for battery charging) 3). AC controllers (e.g. for temperature control) 4). Recommended snubber network: e.g. for VVRMS≤400V: R=33Ω/32W, C=0.47μF MAJOR RATINGS AND CHARACTERISTICS VRSM VRRM, VDRM V V ITRMS=450A (maximum value for continuous operation) ITAV=250A (sin. 180°; TC=85℃) 500 400 SKT 250/04D 900 800 SKT 250/08D 2400 1200 SKT 250/12E 1500 1400 SKT 250/14E 1700 1600 SKT 250/16E ELECTRICAL SPECIFICATIONS Symbol Conditions Values V ITAV sin. 180; TC=100(85)℃ 185(250) A ID K0.55; Ta=45℃; B2/B6 240/330 A K0.55F; Ta=35℃; B2/B6 490/675 A K0.55; Ta=45℃; W1C 265 A Tvj=25℃; 10ms 7000 A Tvj=130℃; 10ms 6000 A Tvj=25℃; 8,35 ... 10ms 245000 A 2S Tvj=130℃; 8,35 ... 10ms 180000 A2S max. 1.65 V IRSM ITSM 2 It VT Tvj=25℃; IT=800A VT(TO) Tvj=130℃ max. 1 V rT Tvj=130℃ max. 0.7 mΩ IDD; IRD Tvj=130℃; VRD=VRRM; VDD=VDRM max. 50 mA tgd Tvj=25℃; IG=1A; diG /dt=1Aμs 1 μs tgr VD=0.67 * VDRM 2 μs (di/dt)cr Tvj=130℃ (dv/dt)cr Tvj=130℃; SKT ... D/SKT ... E max. 100 A/μs max. 500/1000 V/μs tq Tvj=130℃ 50...150 μs IH Tvj=25℃; typ./max. 150/250 mA IL Tvj=25℃;RG=33Ω; typ./max. 300/600 mA www.china-liujing.com 1/4 SKT250 Symbol Conditions Values V VGT Tvj=25℃; d.c. min.3 V IGT Tvj=25℃; d.c. min.200 mA VGD Tvj=130℃; d.c. max.0.25 V IGD Tvj=130℃; d.c. max.10 mA 0.11 K/W Rth(j-c) cont. Rth(j-c) sin.180 0.123 K/W Rth(j-c) rec.120 0.137 K/W Rth(c-s) 0.015 K/W Tvj -40 ... +130 ℃ Tstg -40 ... +150 ℃ Visol - V~ 60 Nm 5*9.81 m/s2 490 g mounting force Ms a m approx. Case B7 PERFORMANCE CURVES FIGURE .xls-1L 500 W sin. 180 rec. 120 400 rec. 30 300 rec. 90 rec. 60 0.25 W 400 0.20 0.15 0.11 Rth(j-a) 0.3 rec. 180 0.35 cont. rec. 15 .xls-1R 500 300 0.4 0.5 200 200 0.6 0.7 0.8 1.0 100 100 PTAV PTAV 0 0 ITAV 100 200 A 300 Fig. 1L Power dissipation vs. on-state current 1.5 K/W 0 Ta 0 100 50 ℃ xls-02 .xls-03 10000 A rec. 180 300 cont. μC sin. 180 ITM= rec. 120 sin. 120 sin. 90 200 2000A 1000A 500A rec. 90 rec. 60 1000 sin. 60 sin. 30 100 sin. 15 200A 100A rec. 30 rec. 15 Qrr ITAV Tvj=130℃ 100 0 0 TC 50 100 ℃ 150 Fig. 2 Rated on-state current vs. case temperature www.china-liujing.com 150 Fig. 1R Power dissipation vs. ambient temperature 1 -diT/dt 10 A/μs 100 Fig. 3 Recovered charge vs. current decrease 2/4 SKT250 .xls-04 0.15 K/W Zth(j-s) θ 360° 180° 120° 90° 60° 30° 15° 0.10 Z(th)z (K/W) sin. rec. 0.013 0.018 0.023 0.032 0.050 0.063 0 0.017 0.027 0.034 0.043 0.055 0.063 .xls-05 0.18 K/W 0.17 Rth(c-s) 0.16 Zth(j-c) K0.55-M24 0.55 K/W K0.55-M24 0.17 K/Wγ6m/s 0.15 0.14 rec. 0.13 0.05 sin. 0.12 Z(th)p=Z(th)t=Z(th)z Zth 0.00 0.001 t 0.01 1 0.1 10 Rth(j-c)(cont.) = 0.11 K/W 0.11 Rth(j-c) 0.10 s 100 0° θ Fig. 4 Transient thermal impedance vs. time 30° 90° 60° 120° 150° 180° Fig. 5 Thermal resistance vs. conduction angle .xls-06 1000 .xls-07 2500 A typ. W max. 800 2000 600 1500 400 1000 200 0 0 VT 0.5 1 rec. 180 cont. PTAV 0 V 1.5 rec. 60 500 Tvj = 25 ℃ Tvj = 130 ℃ IT sin. 180 rec. 120 0 ITAV 200 2 Fig. 6 On-state characteristics 400 600 800 A 1000 Fig. 7 Power dissipation vs. on-state current .xls-08 2.0 IT(OV) ITSM 1.6 ITSM(25℃) =4300 A ITSM(130℃) =3750 A 1.4 1.2 0.VRRM 0.5.VRRM 1.VRRM 1.0 0.8 0.6 0.4 1 t 10 100 ms 1000 Fig. 8 Surge overload curent vs. time .xls-09 100 V 20V; 20Ω 15 50 W 0W (8 VGT 0.001 IG 0.01 s) m s) BSZ -40℃ Tvj = 25℃ 130℃ PG(tp) IGT IGD(130°) 0.1 m < VGD(130°) VG BMZ s) (0 .1 (0 .5 m 1 0W 10 10 0.1 1 10 A 100 Fig. 9 Gate trigger characteristics www.china-liujing.com 3/4 SKT250 OUTLINE SKT10 E-mail: rectifi[email protected] YUEQING LIUJING RECTIFIER CO., LTD Sale Departmant: Liujing Building, Yueqing City, Zhejiang Province Add: Wanao Industrial Zone, Yueqing city, Zhejiang Province Tel: 0086-577-62519692 0089-577-62519693 Fax: 0086-577-62518692 International Export: 0086-577-62571902 Technical Support: 0086-15868768965 After Service: 400-6606-086 http://www.china-liujing.com http://www.liujingdianqi.cn http://www.cnrectifier.com http://www.cnthyristor.com.cn MSN: [email protected] [email protected] 打造最具竞争力的电力半导体产品 To be the most competitive Power Semiconductor Devices manufactory. LIUJING reserves the right to change limits, test conditions and dimensions. 윤정은 이 칼타로그 중에 데이트, 테스트 조건, 외형사이즈에 대한 최종 해석권을 가지고 있습니다. www.china-liujing.com 4/4