SKT50 Line Thyristor STUD VERSION L iu j in g re ct i f ie r c o . , L t d . FEATURES TYPICAL APPLICATIONS 1). Hermetic metal case with glass insulator 2). Threaded stud ISO M8 or UNF 1/4-28 3). International standard case 1). DC motor control (e.g. for machine tools) 2). Controlled rectifiers (e.g. for battery charging) 3). AC controllers (e.g. for temperature control) MAJOR RATINGS AND CHARACTERISTICS VRRM VDRM VRSM ( dvdt ) ITRMS =63A(maximum value for continuous operation) cr V V V/μs ITAV=40A(sin. 180°; Tcase=80℃) 500 400 500 - 700 600 500 SKT 50/06D1)* 900 800 500 SKT 50/08D 1300 1200 1000 SKT 50/12E)1)* 1500 1400 1000 SKT 50/14E1)* 1700 1600 1000 SKT 50/16E 1900 1800 1000 SKT 50/18E※ 1)* Available with UNF thread 1/4-28 UNF2A, e.g. SKT 50/06 D UNF ※ Available in limited quantities ELECTRICAL SPECIFICATIONS Symbol Conditions Values V 45 A ITAV sin. 180; TC=85℃ ITSM Tvj=25℃; 10ms 1050 A Tvj=130℃; 10ms 900 A Tvj=25℃; 8,35 ... 10ms 5000 A2S Tvj=130℃; 8,35 ... 10ms 4000 A2S tgd Tvj=25℃; IG=1A; diG /dt=1Aμs typ.1 μs tgr VD=0.67 * VDRM typ.1.5 μs 50 A/μs 2 It (di/dt)cr f=50...60H IH Tvj=25℃ typ. 100; max. 200 mA IL Tvj=25℃; RG=33Ω typ. 250; max. 400 mA tq Tvj=130℃; typ. 100 μs VT Tvj=25℃; IT=120A; max. 1.8 V VT(TO) Tvj=130℃ 1.1 V rT Tvj=130℃ 5 mΩ Tvj=130℃; VDD=VDRM; VRD=VRRM 8 mA IDD; IRD www.china-liujing.com 1/4 SKT50 Symbol Conditions Values V VGT Tvj=25℃; 3 V IGT Tvj=25℃; 150 mA VGD Tvj=130℃ 0.25 V IGD Tvj=130℃ 5 mA Rthjc cont. 0,57 ℃/W sin.180 0,60 ℃/W rec.120 0,65 ℃/W Rthch 0.20 ℃/W Tvj -40...+130 ℃ Tstg -55...+150 ℃ SI units 4(UNF: 2.5) Nm US units 35(UNF: 22) lb.in. a 5*9.81 m/s2 w 2.2 g Case B3 M PERFORMANCE CURVES FIGURE .xls-1L 100 W 120 80 90 sin. 180 rec. 180 100 W Rthja 1.4 60 60 1.6 60 30 1.8 2 rec. 15 40 20 20 PTAV 0 ITAV 40 20 A 60 0 Fig. 1L Power dissipation vs. on-state current xls-02 75 A cont. ℃ 150 .xls-03 400 ITM= 100A Tvj=130℃ 20A 90 40 10A 50A 5A 60 20 30 30 15 10 oel 50 100 ℃ 150 Fig. 2 Rated on-state current vs. case temperature www.china-liujing.com 100 60 15 oel Tcase 50 120 60 0 Tamb Fig. 1R Power dissipation vs. ambient temperature 100 90 0 0 180 120 ITAV ℃/W 200 180 25 3 3.5 4 5 6 μC rec. θ= sin. θ= 50 2.2 2.5 40 PTAV 0 ℃/W 1.3 80 cont. 1.1 1.0 0.9 0.8 0.7 0.6 1.2 6 Qrr 4 _ di T 1 dt 2 4 10 20 40 60A/μs100 Fig. 3 Recovered charge vs. current decrease 2/4 SKT50 .xls-04 1 .xls-05 1.0 Rthca K5 - M5 5.2 ℃/W K3 - M5 3.2 ℃/W K1.1 - M5 1.3 ℃/W K1.1 - M5 0.6 ℃/W ℃ W ℃ W 0.8 Zthjh 0.9 Zthjc 0.8 Z(th)p=Z(th)t=Z(th)z 0.6 Z(th)z (K/W) θ 0.4 360° 180° 120° 90° 60° 30° 15° 0.2 Z(th)t 10-3 t 10-2 10-1 0.7 sin. rec. 0.003 0.004 0.055 0.105 0.225 0.33 0 0.06 0.08 0.105 0.15 0.225 0.33 100 101 rec. sin. 0.6 Rthjc [Rthjc]cont．=0.57℃/W 0.6 0° θ s 102 Fig. 4 Transient thermal impedance vs. time typ. A 60° 30° 120° 90° 180° 150° Fig. 5 Thermal resistance vs. conduction angle .xls-06 150 6m/s SKN026.xls-1L 400 W max. rec. 60 rec. sin. 120 180 rec. 180 300 100 cont. 200 50 100 Tvj = 130 25 130 25 ℃ PTAV IT 0 0 VT 0.5 1 V 1.5 0 2 0 50 ITAV Fig. 6 On-state characteristics A 100 150 Fig. 7 Power dissipation vs. on-state current IT(OV) ITSM 1.8 .xls-05 ITSM(A) Tvj=25℃ Tvj=130℃ 1.6 SKT 40 SKT 50 700 1050 600 900 1.4 1.2 1 0.VRRM 0.8 1 2 .VRRM 1.VRRM 0.6 0.4 0 10 101 t 102 ms 103 Fig. 8 Surge overload curent vs. time .xls-09 3 20V; 20Ω 2 V 101 5 4 3 VGT W s) m .1 (0 s) s) m (8 5m BMZ VGD . (0 W 25 10-1 10-3 IG 2 130℃ < 2 VG Tvj = -40℃ 25℃ W 50 100 5 4 3 75 BSZ 2 PG(tp) IGT IGD 3 4 5 10-2 2 3 4 5 10-1 2 3 4 5 100 2 3 4 5 101 2 3 4 5 A 102 Fig. 9 Gate trigger characteristics www.china-liujing.com 3/4 SKT50 OUTLINE SKT5 E-mail: rectifi[email protected] YUEQING LIUJING RECTIFIER CO., LTD Sale Departmant: Liujing Building, Yueqing City, Zhejiang Province Add: Wanao Industrial Zone, Yueqing city, Zhejiang Province Tel: 0086-577-62519692 0089-577-62519693 Fax: 0086-577-62518692 International Export: 0086-577-62571902 Technical Support: 0086-15868768965 After Service: 400-6606-086 http://www.china-liujing.com http://www.liujingdianqi.cn http://www.cnrectifier.com http://www.cnthyristor.com.cn MSN: [email protected] [email protected] 打造最具竞争力的电力半导体产品 To be the most competitive Power Semiconductor Devices manufactory. LIUJING reserves the right to change limits, test conditions and dimensions. 윤정은 이 칼타로그 중에 데이트, 테스트 조건, 외형사이즈에 대한 최종 해석권을 가지고 있습니다. www.china-liujing.com 4/4