TDD US1M

US1A - US1M
-
-
- TDD- D A Y A
1.0 Amps. Surface Mount High Efficient Rectifiers
SMA/DO-214AC
Features
Glass passivated junction chip
For surface mounted application
Low profile package
Built-in strain relief
Ideal for automated placement
Easy pick and place
Ultrafast recovery time for high efficiency
Low forward voltage, low power loss
High temperature soldering guaranteed:
260oC/10 seconds on terminals
Plastic material used carries Underwriters
Laboratory Classification 94V0
Mechanical Data
Dimensions in inches and (millimeters)
Cases: Molded plastic
Terminals: Solder plated, solderable per
MIL-STD-750, Method 2026
Polarity: Indicated by cathode band
Weight: 0.064 gram
Maximum Ratings and Electrical Characteristics
Rating at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
@ TL=110 oC
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
Maximum Instantaneous Forward Voltage
@ 1.0A
Maximum DC Reverse Current
@ TA =25 oC at Rated DC Blocking Voltage
@ TA=125 oC
Maximum Reverse Recovery Time ( Note 1 )
Typical Junction Capacitance ( Note 2 )
Maximum Thermal Resistance (Note 3)
Symbol US1A US1B
VRRM
50
100
VRMS
35
70
VDC
50
100
US1D US1G US1J US1K US1M
200
140
200
400
280
400
600
420
00
800
560
800
Units
1000
700
1000
V
V
V
I(AV)
1.0
A
IFSM
30
A
VF
1.0
IR
1.7
V
75
10
uA
uA
nS
pF
5.0
150
Trr
Cj
50
15
75
RθJA
27
RθJL
Operating Temperature Range
TJ
-55 to +150
Storage Temperature Range
TSTG
-55 to + 150
1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
Notes:
2. Measured at 1 MHz and Applied VR=4.0 Volts
3. P.C.B. Mounted on 0.2 x 0.2” (5.0 x 5.0mm) Copper Pad Area.
- 272 -
o
C/W
o
o
C
C
Factory Address: Taiguan Industrial zone, Yanjinyu Dongjin Rode No.1, XinXiang, HeNan, China
-
-
- TDD- D A Y A
RATINGS AND CHARACTERISTIC CURVES (US1A THRU US1M)
FIG.1- MAXIMUM FORWARD CURRENT DERATING
CURVE
FIG.2- MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
50
PEAK FORWARD SURGE CURRENT. (A)
AVERAGE FORWARD CURRENT. (A)
1.2
1.0
RESISTIVE OR
INDUCTIVE LOAD
0.5
P.C.B. MOUNTED ON 0.2 X 0.2"
(5.0X5.0mm) COPPER PAD AREAS
TL=90 0C
8.3ms Single Half Sine Wave
JEDEC Method
40
30
20
10
0
0
0
20
40
60
80
100
120
140
160
180
1
10
o
LEAD TEMPERATURE. ( C)
FIG.3- TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
FIG.4- TYPICAL REVERSE CHARACTERISTICS
100
US1A - US1G
INSTANTANEOUS REVERSE CURRENT. (mA)
INSTANTANEOUS FORWARD CURRENT. (A)
10
1
US1J - US1M
0.1
0.01
Pulse Width=300 s
1% Duty Cycle
0.001
0.4
0.6
0.8
1.2
1.0
1.4
1.6
1.8
10
Tj=100 0C
1
Tj=25 0C
0.1
0.01
0
FORWARD VOLTAGE. (V)
FIG.5- TYPICAL JUNCTION CAPACITANCE
TRANSIENT THERMAL IMPEDANCE, ( OC/W)
US1J
10
A-U
S1G
- US1
M
1
0.1
40
60
80
100
FIG.6- TYPICAL TRANSIENT THERMAL IMPEDANCE
Tj=25 0C
f=1.0MHz
Vsig=50mVp-p
US1
20
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
100
JUNCTION CAPACITANCE.(pF)
100
NUMBER OF CYCLES AT 60Hz
1
10
REVERSE VOLTAGE. (V)
100
10
1
0.1
0.01
100
0.1
1
T, PULSE DURATION, sec.
10
100
FIG.7- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50W
NONINDUCTIVE
10W
NONINDUCTIVE
trr
+0.5A
(-)
DUT
(+)
50Vdc
(approx)
(-)
PULSE
GENERATOR
(NOTE 2)
1W
NON
INDUCTIVE
OSCILLOSCOPE
(NOTE 1)
NOTES: 1. Rise Time=7ns max. Input Impedance=
1 megohm 22pf
2. Rise Time=10ns max. Sourse Impedance=
50 ohms
0
-0.25A
(+)
-1.0A
1cm
SET TIME BASE FOR
5/ 10ns/ cm
Factory Address: Taiguan Industrial zone, Yanjinyu Dongjin Rode No.1, XinXiang, HeNan, China