W25X10, W25X20, W25X40, W25X80
1M-BIT, 2M-BIT, 4M-BIT AND 8M-BIT
SERIAL FLASH MEMORY WITH
4KB SECTORS AND DUAL OUTPUT SPI
-1-
Publication Release Date: September 22, 2006
Preliminary - Revision I
W25X10, W25X20, W25X40, W25X80
Table of Contents1.
GENERAL DESCRIPTION ......................................................................................................... 4
2.
FEATURES ................................................................................................................................. 4
3.
PIN CONFIGURATION SOIC 150-MIL....................................................................................... 5
4.
PIN CONFIGURATION SOIC 208-MIL....................................................................................... 5
5.
PIN CONFIGURATION PDIP 300-MIL ....................................................................................... 5
6.
PIN CONFIGURATION WSON 6X5-MM .................................................................................... 6
7.
PIN DESCRIPTION..................................................................................................................... 6
7.1
Package Types ............................................................................................................... 7
7.2
Chip Select (/CS) ............................................................................................................ 7
7.3
Serial Data Output (DO) ................................................................................................. 7
7.4
Write Protect (/WP)......................................................................................................... 7
7.5
HOLD (/HOLD) ............................................................................................................... 7
7.6
Serial Clock (CLK) .......................................................................................................... 7
7.7
Serial Data Input / Output (DIO) ..................................................................................... 7
8.
BLOCK DIAGRAM ...................................................................................................................... 8
9.
FUNCTIONAL DESCRIPTION ................................................................................................... 9
9.1
9.2
SPI OPERATIONS ......................................................................................................... 9
9.1.1
SPI Modes ........................................................................................................................9
9.1.2
Dual Output SPI................................................................................................................9
9.1.3
Hold Function ...................................................................................................................9
WRITE PROTECTION.................................................................................................. 10
9.2.1
10.
Write Protect Features....................................................................................................10
CONTROL AND STATUS REGISTERS................................................................................... 11
10.1
10.2
STATUS REGISTER .................................................................................................... 11
10.1.1
BUSY............................................................................................................................11
10.1.2
Write Enable Latch (WEL) ............................................................................................11
10.1.3
Block Protect Bits (BP2, BP1, BP0)..............................................................................11
10.1.4
Top/Bottom Block Protect (TB) .....................................................................................11
10.1.5
Reserved Bits ...............................................................................................................11
10.1.6
Status Register Protect (SRP) ......................................................................................12
10.1.7
Status Register Memory Protection ..............................................................................13
INSTRUCTIONS........................................................................................................... 14
10.2.1
Manufacturer and Device Identification.........................................................................14
10.2.2
Instruction Set (1) ...........................................................................................................15
10.2.3
Write Ensable (06h)......................................................................................................16
10.2.4
Write Disable (04h).......................................................................................................16
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W25X10, W25X20, W25X40, W25X80
11.
12.
10.2.5
Read Status Register (05h) ..........................................................................................17
10.2.6
Write Status Register (01h) ..........................................................................................18
10.2.7
Read Data (03h) ...........................................................................................................19
10.2.8
Fast Read (0Bh) ...........................................................................................................20
10.2.9
Fast Read Dual Output (3Bh) .......................................................................................21
10.2.10
Page Program (02h) ...................................................................................................22
10.2.11
Sector Erase (20h) .....................................................................................................23
10.2.12
Block Erase (D8h) ......................................................................................................24
10.2.13
Chip Erase (C7h)........................................................................................................25
10.2.14
Power-down (B9h) ......................................................................................................26
10.2.15
Release Power-down / Device ID (ABh) .....................................................................27
10.2.16
Read Manufacturer / Device ID (90h) .........................................................................29
10.2.17
JEDEC ID (9Fh)..........................................................................................................30
ELECTRICAL CHARACTERISTICS (PRELIMINARY) (4) ....................................................... 31
11.1 Absolute Maximum Ratings (1) .................................................................................... 31
11.2
Operating Ranges......................................................................................................... 31
11.3
Endurance and Data Retention .................................................................................... 32
11.4
Power-up Timing and Write Inhibit Threshold .............................................................. 32
11.5
DC Electrical Characteristics ........................................................................................ 33
11.6
AC Measurement Conditions........................................................................................ 34
11.7
AC Electrical Characteristics ........................................................................................ 35
11.8
AC Electrical Characteristics (cont’d) ........................................................................... 36
11.9
Serial Output Timing ..................................................................................................... 37
11.10
Input Timing................................................................................................................. 37
11.11
Hold Timing ................................................................................................................. 37
PACKAGE SPECIFICATION .................................................................................................... 38
12.1
8-Pin SOIC 150-mil (Package Code SN)...................................................................... 38
12.2
8-Pin SOIC 208-mil (Package Code SS)...................................................................... 39
12.3
8-Pin PDIP 300-mil (Package Code DA) ...................................................................... 40
12.4
8-contact 6x5 WSON .................................................................................................... 41
12.5
8-contact 6x5 WSON Cont’d. ....................................................................................... 42
13.
ORDERING INFORMATION (1)................................................................................................. 43
14.
REVISION HISTORY ................................................................................................................ 44
-3-
Publication Release Date: September 22, 2006
Preliminary - Revision I
W25X10, W25X20, W25X40, W25X80
1. GENERAL DESCRIPTION
The W25X10 (1M-bit), W25X20 (2M-bit), W25X40 (4M-bit) and W25X80 (8M-bit) Serial Flash
memories provide a storage solution for systems with limited space, pins and power. The 25X series
offers flexibility and performance well beyond ordinary Serial Flash devices. They are ideal for code
download applications as well as storing voice, text and data. The devices operate on a single 2.7V to
3.6V power supply with current consumption as low as 5mA active and 1µA for power-down. All
devices are offered in space-saving packages.
The W25X10/20/40/80 array is organized into 512/1024/2048/4096 programmable pages of 256-bytes
each. Up to 256 bytes can be programmed at a time using the Page Program instruction. Pages can
be erased in groups of 16 (sector erase), groups of 256 (block erase) or the entire chip (chip erase).
The W25X10/20/40/80 has 32/64/128/256 erasable sectors and 2/4/8/16 erasable blocks respectively.
The small 4KB sectors allow for greater flexibility in applications that require data and parameter
storage. (See figure 2.)
The W25X10/20/40/80 supports the standard Serial Peripheral Interface (SPI), and a high
performance dual output SPI using four pins: Serial Clock, Chip Select, Serial Data I/O and Serial
Data Out. SPI clock frequencies of up to 75MHz are supported allowing equivalent clock rates of
150MHz when using the Fast Read Dual Output instruction. These transfer rates are comparable to
those of 8 and 16-bit Parallel Flash memories.
A Hold pin, Write Protect pin and programmable write protect, with top or bottom array control
features, provide further control flexibility. Additionally, the device supports JEDEC standard
manufacturer and device identification.
2. FEATURES
• Family of Serial Flash Memories
– W25X10: 1M-bit / 128K-byte (131,072)
– W25X20: 2M-bit / 256K-byte (262,144)
– W25X40: 4M-bit / 512K-byte (524,288)
– W25X80: 8M-bit / 1M-byte (1,048,576)
– 256-bytes per programmable page
– Uniform 4K-byte Sectors / 64K-byte Blocks
• Flexible Architecture with 4KB sectors
– Sector Erase (4K-bytes)
– Block Erase (64K-byte)
– Page program up to 256 bytes <2ms
– Up to 100,000 erase/write cycles
– 20-year retention
• Low Power Consumption, Wide
Temperature Range
– Single 2.7 to 3.6V supply
– 5mA active current, 1µA Power-down (typ)
– -40° to +85°C operating range
• SPI with Single or Dual Outputs
– Clock, Chip Select, Data I/O, Data Out
– Optional Hold function for SPI flexibility
• Data Transfer up to 150M-bits / second
– Clock operation to 75MHz
– Fast Read Dual Output instruction
– Auto-increment Read capability
• Software and Hardware Write Protection
– Write-Protect all or portion of memory
– Enable/Disable protection with /WP pin
– Top or bottom array protection
• Space Efficient Packaging
– 8-pin SOIC 150-mil (W25X10/20/40)
– 8-pin SOIC 208-mil (W25X40/80)
– 8-pin PDIP 300-mil (W25X10/20/40/80)
– 8-pin WSON 6x5-mm (W25X10/20/40/80)
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W25X10, W25X20, W25X40, W25X80
3. PIN CONFIGURATION SOIC 150-MIL
Figure 1a. W25X10, W25X20 and W25X40 Pin Assignments, 8-pin SOIC (Package Code SN)
4. PIN CONFIGURATION SOIC 208-MIL
Figure 1b。W25X40 and W25X80 Pin Assignments, 8-pin SOIC (Package Code SS)
5. PIN CONFIGURATION PDIP 300-MIL
Figure 1c。W25X10, W25X20, W25X40 and W25X80 Pin Assignments, 8-pin PDIP (Package Code DA)
-5-
Publication Release Date: September 22, 2006
Preliminary - Revision I
W25X10, W25X20, W25X40, W25X80
6.
PIN CONFIGURATION WSON 6X5-MM
Figure 1d。W25X10, W25X20, W25X40 and W25X80 Pin Assignments, 8-pin WSON (Package Code ZP)
7. PIN DESCRIPTION
SOIC 150-mil, SOIC 208-mil, PDIP 300-mil, and WSON 6x5-mm
PAD NO.
PAD NAME
I/O
FUNCTION
1
/CS
I
Chip Select Input
2
DO
O
Data Output
3
/WP
I
Write Protect Input
4
GND
5
DIO
I/O
6
CLK
I
Serial Clock Input
7
/HOLD
I
Hold Input
8
VCC
Ground
Data Input / Output
Power Supply
-6-
W25X10, W25X20, W25X40, W25X80
7.1
Package Types
At the time this datasheet was published not all package types had been finalized. Contact Winbond
to confirm availability of these packages before designing to this specification. The W25X10, W25X20
and W25X40 are offered in an 8-pin plastic 150-mil width SOIC (package code SN) as shown in figure
1a. The W25X40 and W25X80 is offered in an 8-pin plastic 208-mil width SOIC (package code SS) as
shown in figure 1b. All parts will be offered in 6x5-mm WSON (package code ZP) and 300-mil DIP
(package code DA). Package diagrams and dimensions are illustrated at the end of this datasheet.
7.2
Chip Select (/CS)
The SPI Chip Select (/CS) pin enables and disables device operation. When /CS is high the device is
deselected and the Serial Data Output (DO) pin is at high impedance. When deselected, the devices
power consumption will be at standby levels unless an internal erase, program or status register cycle
is in progress. When /CS is brought low the device will be selected, power consumption will increase
to active levels and instructions can be written to and data read from the device. After power-up, /CS
must transition from high to low before a new instruction will be accepted. The /CS input must track
the VCC supply level at power-up (see “Write Protection” and figure 20). If needed a pull-up resister
on /CS can be used to accomplish this.
7.3
Serial Data Output (DO)
The SPI Serial Data Output (DO) pin provides a means for data and status to be serially read from
(shifted out of) the device. Data is shifted out on the falling edge of the Serial Clock (CLK) input pin.
7.4
Write Protect (/WP)
The Write Protect (/WP) pin can be used to prevent the Status Register from being written. Used in
conjunction with the Status Register’s Block Protect (BP2, BP1, and BP0) bits and Status Register
Protect (SRP) bits, a portion or the entire memory array can be hardware protected. The /WP pin is
active low.
7.5
HOLD (/HOLD)
The /HOLD pin allows the device to be paused while it is actively selected. When /HOLD is brought
low, while /CS is low, the DO pin will be at high impedance and signals on the DIO and CLK pins will
be ignored (don’t care). When /HOLD is brought high, device operation can resume. The /HOLD
function can be useful when multiple devices are sharing the same SPI signals. (“See Hold function”)
7.6
Serial Clock (CLK)
The SPI Serial Clock Input (CLK) pin provides the timing for serial input and output operations. ("See
SPI "Operations")
7.7
Serial Data Input / Output (DIO)
The SPI Serial Data Input/Output (DIO) pin provides a means for instructions, addresses and data to
be serially written to (shifted into) the device. Data is latched on the rising edge of the Serial Clock
(CLK) input pin. The DIO pin is also used as an output when the Fast Read Dual Output instruction is
executed.
-7-
Publication Release Date: September 22, 2006
Preliminary - Revision I
W25X10, W25X20, W25X40, W25X80
8. BLOCK DIAGRAM
Figure 2. W25X10, W25X20, W25X40 and W25X80 Block Diagram
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W25X10, W25X20, W25X40, W25X80
9. FUNCTIONAL DESCRIPTION
9.1
SPI OPERATIONS
9.1.1 SPI Modes
The W25X10/20/40/80 is accessed through an SPI compatible bus consisting of four signals: Serial
Clock (CLK), Chip Select (/CS), Serial Data Input/Output (DIO) and Serial Data Output (DO). Both SPI
bus operation Modes 0 (0,0) and 3 (1,1) are supported. The primary difference between Mode 0 and
Mode 3 concerns the normal state of the CLK signal when the SPI bus master is in standby and data
is not being transferred to the Serial Flash. For Mode 0 the CLK signal is normally low. For Mode 3 the
CLK signal is normally high. In either case data input on the DIO pin is sampled on the rising edge of
the CLK. Data on the DO and DIO pins are clocked out on the falling edge of CLK.
9.1.2 Dual Output SPI
The W25X10/20/40/80 supports Dual output operation when using the "Fast Read with Dual Output"
(3B hex) instruction. This feature allows data to be transferred from the Serial Flash memory at twice
the rate possible with the standard SPI. This instruction is ideal for quickly downloading code from
Flash to RAM upon power-up (code-shadowing) or for applications that cache code-segments to RAM
for execution. The Dual output feature simply allows the SPI input pin to also serve as an output
during this instruction. All other operations use the standard SPI interface with single output signal.
9.1.3 Hold Function
The /HOLD signal allows the W25X10/20/40/80 operation to be paused while it is actively selected
(when /CS is low). The /HOLD function may be useful in cases where the SPI data and clock signals
are shared with other devices. For example, consider if the page buffer was only partially written when
a priority interrupt requires use of the SPI bus. In this case the /HOLD function can save the state of
the instruction and the data in the buffer so programming can resume where it left off once the bus is
available again.
To initiate a /HOLD condition, the device must be selected with /CS low. A /HOLD condition will
activate on the falling edge of the /HOLD signal if the CLK signal is already low. If the CLK is not
already low the /HOLD condition will activate after the next falling edge of CLK. The /HOLD condition
will terminate on the rising edge of the /HOLD signal if the CLK signal is already low. If the CLK is not
already low the /HOLD condition will terminate after the next falling edge of CLK.
During a /HOLD condition, the Serial Data Output (DO) is high impedance, and Serial Data
Input/Output (DIO) and Serial Clock (CLK) are ignored. The Chip Select (/CS) signal should be kept
active (low) for the full duration of the /HOLD operation to avoid resetting the internal logic state of the
device.
-9-
Publication Release Date: September 22, 2006
Preliminary - Revision I
W25X10, W25X20, W25X40, W25X80
9.2
WRITE PROTECTION
Applications that use non-volatile memory must take into consideration the possibility of noise and
other adverse system conditions that may compromise data integrity. To address this concern the
W25X10/20/40/80 provides several means to protect data from inadvertent writes.
9.2.1
Write Protect Features
•
Device resets when VCC is below threshold.
•
Time delay write disable after Power-up.
•
Write enable/disable instructions.
•
Automatic write disable after program and erase.
•
Software write protection using Status Register.
•
Hardware write protection using Status Register and /WP pin.
•
Write Protection using Power-down instruction.
Upon power-up or at power-down the W25X10/20/40/80 will maintain a reset condition while VCC is
below the threshold value of VWI, (See Power-up Timing and Voltage Levels and Figure 20). While
reset, all operations are disabled and no instructions are recognized. During power-up and after the
VCC voltage exceeds VWI, all program and erase related instructions are further disabled for a time
delay of tPUW. This includes the Write Enable, Page Program, Sector Erase, Block Erase, Chip Erase
and the Write Status Register instructions. Note that the chip select pin (/CS) must track the VCC
supply level at power-up until the VCC-min level and tVSL time delay is reached. If needed a pull-up
resister on /CS can be used to accomplish this.
After power-up the device is automatically placed in a write-disabled state with the Status Register
Write Enable Latch (WEL) set to a 0. A Write Enable instruction must be issued before a Page
Program, Sector Erase, Chip Erase or Write Status Register instruction will be accepted. After
completing a program, erase or write instruction the Write Enable Latch (WEL) is automatically
cleared to a write-disabled state of 0.
Software controlled write protection is facilitated using the Write Status Register instruction and setting
the Status Register Protect (SRP) and Block Protect (TB, BP2, BP1, and BP0) bits. These Status
Register bits allow a portion or all of the memory to be configured as read only. Used in conjunction
with the Write Protect (/WP) pin, changes to the Status Register can be enabled or disabled under
hardware control. See Status Register for further information.
Additionally, the Power-down instruction offers an extra level of write protection as all instructions are
ignored except for the Release Power-down instruction.
- 10 -
W25X10, W25X20, W25X40, W25X80
10. CONTROL AND STATUS REGISTERS
The Read Status Register instruction can be used to provide status on the availability of the Flash
memory array, if the device is write enabled or disabled, and the state of write protection. The Write
Status Register instruction can be used to configure the devices write protection features. See Figure 3.
10.1 STATUS REGISTER
10.1.1 BUSY
BUSY is a read only bit in the status register (S0) that is set to a 1 state when the device is executing
a Page Program, Sector Erase, Block Erase, Chip Erase or Write Status Register instruction. During
this time the device will ignore further instructions except for the Read Status Register instruction (see
tW, tPP, tSE, TBE, and tCE in AC Characteristics). When the program, erase or write status register
instruction has completed, the BUSY bit will be cleared to a 0 state indicating the device is ready for
further instructions.
10.1.2 Write Enable Latch (WEL)
Write Enable Latch (WEL) is a read only bit in the status register (S1) that is set to a 1 after executing
a Write Enable Instruction. The WEL status bit is cleared to a 0 when the device is write disabled. A
write disable state occurs upon power-up or after any of the following instructions: Write Disable, Page
Program, Sector Erase, Block Erase, Chip Erase and Write Status Register.
10.1.3 Block Protect Bits (BP2, BP1, BP0)
The Block Protect Bits (BP2, BP1, and BP0) are non-volatile read/write bits in the status register (S4,
S3, and S2) that provide Write Protection control and status. Block Protect bits can be set using the
Write Status Register Instruction (see tW in AC characteristics). All, none or a portion of the memory
array can be protected from Program and Erase instructions (see Status Register Memory Protection
table). The factory default setting for the Block Protection Bits is 0, none of the array protected. The
Block Protect bits can not be written to if the Status Register Protect (SRP) bit is set to 1 and the Write
Protect (/WP) pin is low.
10.1.4 Top/Bottom Block Protect (TB)
The Top/Bottom bit (TB) controls if the Block Protect Bits (BP2, BP1, BP0) protect from the Top
(TB=0) or the Bottom (TB=1) of the array as shown in the Status Register Memory Protection table.
The TB bit is non-volatile and the factory default setting is TB=0. The TB bit can be set with the Write
Status Register Instruction provided that the Write Enable instruction has been issued. The TB bit can
not be written to if the Status Register Protect (SRP) bit is set to 1 and the Write Protect (/WP) pin is
low.
10.1.5 Reserved Bits
Status register bit location S6 is reserved for future use. Current devices will read 0 for this bit
location. It is recommended to mask out the reserved bit when testing the Status Register. Doing this
will ensure compatibility with future devices.
- 11 -
Publication Release Date: September 22, 2006
Preliminary - Revision I
W25X10, W25X20, W25X40, W25X80
10.1.6 Status Register Protect (SRP)
The Status Register Protect (SRP) bit is a non-volatile read/write bit in status register (S7) that can be
used in conjunction with the Write Protect (/WP) pin to disable writes to status register. When the SRP
bit is set to a 0 state (factory default) the /WP pin has no control over status register. When the SRP
pin is set to a 1, the Write Status Register instruction is locked out while the /WP pin is low. When the
/WP pin is high the Write Status Register instruction is allowed.
Figure 3. Status Register Bit Locations
- 12 -
W25X10, W25X20, W25X40, W25X80
10.1.7 Status Register Memory Protection
STATUS REGISTER(1)
TB BP2
BP1
BP0
x
0
0
0
0
1
1
1
1
x
x
0
0
0
0
1
0
0
0
1
1
1
0
0
1
1
0
0
1
1
0
0
1
0
1
0
1
0
1
0
1
0
1
x
STATUS REGISTER(1)
TB BP2
BP1
BP0
x
0
0
0
1
1
1
x
0
0
0
0
0
0
0
1
0
0
1
1
0
1
1
x
0
1
0
1
1
0
1
x
W25X80 (8M-BIT) MEMORY PROTECTION
BLOCK(S)
ADDRESSES
DENSITY (KB)
NONE
15
14 and 15
12 thru 15
8 thru 15
0
0 and 1
0 thru 3
0 thru 7
0 thru 15
0 thru 15
BLOCK(S)
NONE
7
6 and 7
4 thru 7
0
0 and 1
0 thru 3
0 thru 7
STATUS REGISTER(1)
NONE
0F0000h - 0FFFFFh
0E0000h - 0FFFFFh
0C0000h - 0FFFFFh
080000h - 0FFFFFh
000000h - 00FFFFh
000000h - 01FFFFh
000000h - 03FFFFh
000000h - 07FFFFh
000000h - 0FFFFFh
000000h - 0FFFFFh
NONE
512K-bit
1M-bit
2M-bit
4M-bit
512K-bit
1M-bit
2M-bit
4M-bit
8M-bit
8M-bit
W25X40 (4M-BIT) MEMORY PROTECTION
ADDRESSES
DENSITY (KB)
NONE
070000h - 07FFFFh
060000h - 07FFFFh
040000h - 07FFFFh
000000h - 00FFFFh
000000h - 01FFFFh
000000h - 03FFFFh
000000h - 07FFFFh
NONE
512K-bit
1M-bit
2M-bit
512K-bit
1M-bit
2M-bit
4M-bit
PORTION
NONE
Upper 1/16
Upper 1/8
Upper 1/4
Upper 1/2
Lower 1/16
Lower 1/8
Lower 1/4
Lower 1/2
ALL
ALL
PORTION
NONE
Upper 1/8
Upper 1/4
Upper 1/2
Lower 1/8
Lower 1/4
Lower 1/2
ALL
W25X20 (2M-BIT) MEMORY PROTECTION
TB
BP2
BP1
BP0
BLOCK(S)
ADDRESSES
DENSITY (KB)
PORTION
x
0
0
1
1
x
x
x
x
x
x
x
0
0
1
0
1
1
0
1
0
1
0
1
NONE
3
2 and 3
0
0 and 1
0 thru 3
NONE
030000h - 03FFFFh
020000h - 03FFFFh
000000h - 00FFFFh
000000h - 01FFFFh
000000h - 03FFFFh
NONE
512K-bit
1M-bit
512K-bit
1M-bit
2M-bit
NONE
Upper 1/4
Upper 1/2
Lower 1/4
Lower 1/2
ALL
STATUS REGISTER(1)
W25X10 (1M-BIT) MEMORY PROTECTION
TB
BP2
BP1
BP0
BLOCK(S)
ADDRESSES
DENSITY (KB)
PORTION
x
0
1
x
x
x
x
x
0
0
0
1
0
1
1
x
NONE
1
0
0 and 1
NONE
010000h - 01FFFFh
000000h - 00FFFFh
000000h - 01FFFFh
NONE
512K-bit
512K-bit
1M-bit
NONE
Upper 1/2
Lower 1/2
ALL
Note:
1. x = don’t care
- 13 -
Publication Release Date: September 22, 2006
Preliminary - Revision I
W25X10, W25X20, W25X40, W25X80
10.2 INSTRUCTIONS
The instruction set of the W25X10/20/80/16 consists of fifteen basic instructions that are fully
controlled through the SPI bus (see Instruction Set table). Instructions are initiated with the falling
edge of Chip Select (/CS). The first byte of data clocked into the DIO input provides the instruction
code. Data on the DIO input is sampled on the rising edge of clock with most significant bit (MSB) first.
Instructions vary in length from a single byte to several bytes and may be followed by address bytes,
data bytes, dummy bytes (don’t care), and in some cases, a combination. Instructions are completed
with the rising edge of edge /CS. Clock relative timing diagrams for each instruction are included in
figures 4 through 19. All read instructions can be completed after any clocked bit. However, all
instructions that Write, Program or Erase must complete on a byte boundary (CS driven high after a
full 8-bits have been clocked) otherwise the instruction will be terminated. This feature further protects
the device from inadvertent writes. Additionally, while the memory is being programmed or erased, or
when the Status Register is being written, all instructions except for Read Status Register will be
ignored until the program or erase cycle has completed.
10.2.1 Manufacturer and Device Identification
MANUFACTURER ID
(M7-M0)
Winbond Serial Flash
EFH
Device ID
(ID7-ID0)
(ID15-ID0)
Instruction
ABh, 90h
9Fh
W25X10
10h
3011h
W25X20
11h
3012h
W25X40
12h
3013h
W25X80
13h
3014h
- 14 -
W25X10, W25X20, W25X40, W25X80
10.2.2 Instruction Set (1)
INSTRUCTION
NAME
BYTE 1 BYTE 2
CODE
Write Enable
06h
Write Disable
Read Status
Register
Write Status
Register
Read Data
04h
Fast Read
BYTE 3
BYTE 4
BYTE 5
BYTE 6
N-BYTES
05h
(S7–S0)(1)
(2)
01h
S7–S0
03h
A23–A16
A15–A8
A7–A0
(D7–D0)
(Next byte)
0Bh
A23–A16
A15–A8
A7–A0
dummy
(D7–D0)
(one byte
per 4 clocks,
continuous)
Up to 256
bytes
Fast Read Dual
Output
3Bh
A23–A16
A15–A8
A7–A0
dummy
I/O =
(D6,D4,D2,D0)
O=
(D7,D5,D3,D1)
Page Program
02h
A23–A16
A15–A8
A7–A0(3)
(D7–D0)
(Next byte)
D8h
A23–A16
A15–A8
A7–A0
20h
A23–A16
A15–A8
A7–A0
ABh
dummy
dummy
dummy
(ID7-ID0)(4)
(M7-M0)
Block Erase
(64KB)
Sector Erase
(4KB)
Chip Erase
Power-down
Release Powerdown / Device ID
Manufacturer/
Device ID (3)
C7h
B9h
90h
dummy
dummy
00h
JEDEC ID
9Fh
(M7-M0)
Manufacturer
(ID15-ID8)
Memory
Type
(ID7-ID0)
Capacity
continuous
(Next Byte)
continuous
(ID7-ID0)
Notes:
1. Data bytes are shifted with Most Significant Bit first. Byte fields with data in parenthesis “( )” indicate data being
read from the device on the DO pin.
2. The Status Register contents will repeat continuously until /CS terminates the instruction.
3. See Manufacturer and Device Identification table for Device ID information.
4. The Device ID will repeat continuously until /CS terminates the instruction.
- 15 -
Publication Release Date: September 22, 2006
Preliminary - Revision I
W25X10, W25X20, W25X40, W25X80
10.2.3 Write Enable (06h)
The Write Enable instruction (Figure 4) sets the Write Enable Latch (WEL) bit in the Status Register to
a 1. The WEL bit must be set prior to every Page Program, Sector Erase, Block Erase, Chip Erase
and Write Status Register instruction. The Write Enable instruction is entered by driving /CS low,
shifting the instruction code “06h” into the Data Input (DI) pin on the rising edge of CLK, and then
driving /CS high.
Figure 4. Write Enable Instruction Sequence Diagram
10.2.4 Write Disable (04h)
The Write Disable instruction (Figure 5) resets the Write Enable Latch (WEL) bit in the Status Register
to a 0. The Write Disable instruction is entered by driving /CS low, shifting the instruction code “04h”
into the DIO pin and then driving /CS high. Note that the WEL bit is automatically reset after Power-up
and upon completion of the Write Status Register, Page Program, Sector Erase, Block Erase and
Chip Erase instructions.
Figure 5. Write Disable Instruction Sequence Diagram
- 16 -
W25X10, W25X20, W25X40, W25X80
10.2.5 Read Status Register (05h)
The Read Status Register instruction allows the 8-bit Status Register to be read. The instruction is
entered by driving /CS low and shifting the instruction code “05h” into the DIO pin on the rising edge of
CLK. The status register bits are then shifted out on the DO pin at the falling edge of CLK with most
significant bit (MSB) first as shown in figure 6. The Status Register bits are shown in figure 3 and
include the BUSY, WEL, BP2-BP0, TB and SRP bits (see description of the Status Register earlier in
this datasheet).
The Status Register instruction may be used at any time, even while a Program, Erase or Write Status
Register cycle is in progress. This allows the BUSY status bit to be checked to determine when the
cycle is complete and if the device can accept another instruction. The Status Register can be read
continuously, as shown in Figure 6. The instruction is completed by driving /CS high.
Figure 6. Read Status Register Instruction Sequence Diagram
- 17 -
Publication Release Date: September 22, 2006
Preliminary - Revision I
W25X10, W25X20, W25X40, W25X80
10.2.6 Write Status Register (01h)
The Write Status Register instruction allows the Status Register to be written. A Write Enable
instruction must previously have been executed for the device to accept the Write Status Register
Instruction (Status Register bit WEL must equal 1). Once write enabled, the instruction is entered by
driving /CS low, sending the instruction code “01h”, and then writing the status register data byte as
illustrated in figure 7. The Status Register bits are shown in figure 3 and described earlier in this
datasheet.
Only non-volatile Status Register bits SRP, TB, BP2, BP1 and BP0 (bits 7, 5, 4, 3 and 2) can be
written to. All other Status Register bit locations are read-only and will not be affected by the Write
Status Register instruction.
The /CS pin must be driven high after the eighth bit of the last byte has been latched. If this is not
done the Write Status Register instruction will not be executed. After /CS is driven high, the self-timed
Write Status Register cycle will commence for a time duration of tW (See AC Characteristics). While
the Write Status Register cycle is in progress, the Read Status Register instruction may still accessed
to check the status of the BUSY bit. The BUSY bit is a 1 during the Write Status Register cycle and a
0 when the cycle is finished and ready to accept other instructions again. After the Write Register
cycle has finished the Write Enable Latch (WEL) bit in the Status Register will be cleared to 0.
The Write Status Register instruction allows the Block Protect bits (TB, BP2, BP1 and BP0) to be set
for protecting all, a portion, or none of the memory from erase and program instructions. Protected
areas become read-only (see Status Register Memory Protection table). The Write Status Register
instruction also allows the Status Register Protect bit (SRP) to be set. This bit is used in conjunction
with the Write Protect (/WP) pin to disable writes to the status register. When the SRP bit is set to a 0
state (factory default) the /WP pin has no control over the status register. When the SRP pin is set to a
1, the Write Status Register instruction is locked out while the /WP pin is low. When the /WP pin is
high the Write Status Register instruction is allowed.
Figure 7. Write Status Register Instruction Sequence Diagram
- 18 -
W25X10, W25X20, W25X40, W25X80
10.2.7 Read Data (03h)
The Read Data instruction allows one more data bytes to be sequentially read from the memory. The
instruction is initiated by driving the /CS pin low and then shifting the instruction code “03h” followed
by a 24-bit address (A23-A0) into the DIO pin. The code and address bits are latched on the rising
edge of the CLK pin. After the address is received, the data byte of the addressed memory location
will be shifted out on the DO pin at the falling edge of CLK with most significant bit (MSB) first. The
address is automatically incremented to the next higher address after each byte of data is shifted out
allowing for a continuous stream of data. This means that the entire memory can be accessed with a
single instruction as long as the clock continues. The instruction is completed by driving /CS high. The
Read Data instruction sequence is shown in figure 8. If a Read Data instruction is issued while an
Erase, Program or Write cycle is in process (BUSY=1) the instruction is ignored and will not have any
effects on the current cycle. The Read Data instruction allows clock rates from D.C. to a maximum of
fR (see AC Electrical Characteristics).
Figure 8. Read Data Instruction Sequence Diagram
- 19 -
Publication Release Date: September 22, 2006
Preliminary - Revision I
W25X10, W25X20, W25X40, W25X80
10.2.8 Fast Read (0Bh)
The Fast Read instruction is similar to the Read Data instruction except that it can operate at the
highest possible frequency of FR (see AC Electrical Characteristics). This is accomplished by adding
eight “dummy” clocks after the 24-bit address as shown in figure 9. The dummy clocks allow the
devices internal circuits additional time for setting up the initial address. During the dummy clocks the
data value on the DIO pin is a “don’t care”.
Figure 9. Fast Read Instruction Sequence Diagram
- 20 -
W25X10, W25X20, W25X40, W25X80
10.2.9 Fast Read Dual Output (3Bh)
The Fast Read Dual Output (3Bh) instruction is similar to the standard Fast Read (0Bh) instruction
except that data is output on two pins, DO and DIO, instead of just DO. This allows data to be
transferred from the W25X10/20/40/80 at twice the rate of standard SPI devices. The Fast Read Dual
Output instruction is ideal for quickly downloading code from Flash to RAM upon power-up or for
applications that cache code-segments to RAM for execution.
Similar to the Fast Read instruction, the Fast Read Dual Output instruction can operate at the highest
possible frequency of FR (see AC Electrical Characteristics). This is accomplished by adding eight
“dummy” clocks after the 24-bit address as shown in figure 10. The dummy clocks allow the device's
internal circuits additional time for setting up the initial address. The input data during the dummy
clocks is “don’t care”. However, the DIO pin should be high-impedance prior to the falling edge of the
first data out clock.
Figure 10. Fast Read Dual Output Instruction Sequence Diagram
- 21 -
Publication Release Date: September 22, 2006
Preliminary - Revision I
W25X10, W25X20, W25X40, W25X80
10.2.10 Page Program (02h)
The Page Program instruction allows up to 256 bytes of data to be programmed at previously erased
to all 1s (FFh) memory locations. A Write Enable instruction must be executed before the device will
accept the Page Program Instruction (Status Register bit WEL must equal 1). The instruction is
initiated by driving the /CS pin low then shifting the instruction code “02h” followed by a 24-bit address
(A23-A0) and at least one data byte, into the DIO pin. The /CS pin must be held low for the entire
length of the instruction while data is being sent to the device. The Page Program instruction
sequence is shown in figure 11.
If an entire 256 byte page is to be programmed, the last address byte (the 8 least significant address
bits) should be set to 0. If the last address byte is not zero, and the number of clocks exceed the
remaining page length, the addressing will wrap to the beginning of the page. In some cases, less
than 256 bytes (a partial page) can be programmed without having any effect on other bytes within the
same page. One condition to perform a partial page program is that the number of clocks can not
exceed the remaining page length. If more than 256 bytes are sent to the device the addressing will
wrap to the beginning of the page and overwrite previously sent data.
As with the write and erase instructions, the /CS pin must be driven high after the eighth bit of the last
byte has been latched. If this is not done the Page Program instruction will not be executed. After /CS
is driven high, the self-timed Page Program instruction will commence for a time duration of tpp (See
AC Characteristics). While the Page Program cycle is in progress, the Read Status Register
instruction may still be accessed for checking the status of the BUSY bit. The BUSY bit is a 1 during
the Page Program cycle and becomes a 0 when the cycle is finished and the device is ready to accept
other instructions again. After the Page Program cycle has finished the Write Enable Latch (WEL) bit
in the Status Register is cleared to 0. The Page Program instruction will not be executed if the
addressed page is protected by the Block Protect (BP2, BP1, and BP0) bits (see Status Register
Memory Protection table).
Figure 11. Page Program Instruction Sequence Diagram
- 22 -
W25X10, W25X20, W25X40, W25X80
10.2.11 Sector Erase (20h)
The Sector Erase instruction sets all memory within a specified sector (4K-bytes) to the erased state
of all 1s (FFh). A Write Enable instruction must be executed before the device will accept the Sector
Erase Instruction (Status Register bit WEL must equal 1). The instruction is initiated by driving the /CS
pin low and shifting the instruction code “20h” followed a 24-bit sector address (A23-A0) (see Figure
2). The Sector Erase instruction sequence is shown in figure 12.
The /CS pin must be driven high after the eighth bit of the last byte has been latched. If this is not
done the Sector Erase instruction will not be executed. After /CS is driven high, the self-timed Sector
Erase instruction will commence for a time duration of tSE (See AC Characteristics). While the Sector
Erase cycle is in progress, the Read Status Register instruction may still be accessed for checking the
status of the BUSY bit. The BUSY bit is a 1 during the Sector Erase cycle and becomes a 0 when the
cycle is finished and the device is ready to accept other instructions again. After the Sector Erase
cycle has finished the Write Enable Latch (WEL) bit in the Status Register is cleared to 0. The Sector
Erase instruction will not be executed if the addressed page is protected by the Block Protect (TB,
BP2, BP1, and BP0) bits (see Status Register Memory Protection table).
Figure 12. Sector Erase Instruction Sequence Diagram
- 23 -
Publication Release Date: September 22, 2006
Preliminary - Revision I
W25X10, W25X20, W25X40, W25X80
10.2.12 Block Erase (D8h)
The Block Erase instruction sets all memory within a specified block (64K-bytes) to the erased state of
all 1s (FFh). A Write Enable instruction must be executed before the device will accept the Block
Erase Instruction (Status Register bit WEL must equal 1). The instruction is initiated by driving the /CS
pin low and shifting the instruction code “D8h” followed a 24-bit block address (A23-A0) (see Figure
2). The Block Erase instruction sequence is shown in figure 13.
The /CS pin must be driven high after the eighth bit of the last byte has been latched. If this is not
done the Block Erase instruction will not be executed. After /CS is driven high, the self-timed Block
Erase instruction will commence for a time duration of tBE (See AC Characteristics). While the Block
Erase cycle is in progress, the Read Status Register instruction may still be accessed for checking the
status of the BUSY bit. The BUSY bit is a 1 during the Block Erase cycle and becomes a 0 when the
cycle is finished and the device is ready to accept other instructions again. After the Block Erase cycle
has finished the Write Enable Latch (WEL) bit in the Status Register is cleared to 0. The Block Erase
instruction will not be executed if the addressed page is protected by the Block Protect (TB, BP2, BP1,
and BP0) bits (see Status Register Memory Protection table).
Figure 13. Block Erase Instruction Sequence Diagram
- 24 -
W25X10, W25X20, W25X40, W25X80
10.2.13 Chip Erase (C7h)
The Chip Erase instruction sets all memory within the device to the erased state of all 1s (FFh). A
Write Enable instruction must be executed before the device will accept the Chip Erase Instruction
(Status Register bit WEL must equal 1). The instruction is initiated by driving the /CS pin low and
shifting the instruction code “C7h”. The Chip Erase instruction sequence is shown in figure 14.
The /CS pin must be driven high after the eighth bit has been latched. If this is not done the Chip
Erase instruction will not be executed. After /CS is driven high, the self-timed Chip Erase instruction
will commence for a time duration of tCE (See AC Characteristics). While the Chip Erase cycle is in
progress, the Read Status Register instruction may still be accessed to check the status of the BUSY
bit. The BUSY bit is a 1 during the Chip Erase cycle and becomes a 0 when finished and the device is
ready to accept other instructions again. After the Chip Erase cycle has finished the Write Enable
Latch (WEL) bit in the Status Register is cleared to 0. The Chip Erase instruction will not be executed
if any page is protected by the Block Protect (BP2, BP1, and BP0) bits (see Status Register Memory
Protection table).
Figure 14. Chip Erase Instruction Sequence Diagram
- 25 -
Publication Release Date: September 22, 2006
Preliminary - Revision I
W25X10, W25X20, W25X40, W25X80
10.2.14 Power-down (B9h)
Although the standby current during normal operation is relatively low, standby current can be further
reduced with the Power-down instruction. The lower power consumption makes the Power-down
instruction especially useful for battery powered applications (See ICC1 and ICC2 in AC
Characteristics). The instruction is initiated by driving the /CS pin low and shifting the instruction code
“B9h” as shown in figure 15.
The /CS pin must be driven high after the eighth bit has been latched. If this is not done the Powerdown instruction will not be executed. After /CS is driven high, the power-down state will entered
within the time duration of tDP (See AC Characteristics). While in the power-down state only the
Release from Power-down / Device ID instruction, which restores the device to normal operation, will
be recognized. All other instructions are ignored. This includes the Read Status Register instruction,
which is always available during normal operation. Ignoring all but one instruction makes the Power
Down state a useful condition for securing maximum write protection. The device always powers-up in
the normal operation with the standby current of ICC1.
Figure 15. Deep Power-down Instruction Sequence Diagram
- 26 -
W25X10, W25X20, W25X40, W25X80
10.2.15 Release Power-down / Device ID (ABh)
The Release from Power-down / Device ID instruction is a multi-purpose instruction. It can be used to
release the device from the power-down state, obtain the devices electronic identification (ID) number
or do both.
When used only to release the device from the power-down state, the instruction is issued by driving
the /CS pin low, shifting the instruction code “ABh” and driving /CS high as shown in figure 16. After
the time duration of tRES1 (See AC Characteristics) the device will resume normal operation and other
instructions will be accepted. The /CS pin must remain high during the tRES1 time duration.
When used only to obtain the Device ID while not in the power-down state, the instruction is initiated
by driving the /CS pin low and shifting the instruction code “ABh” followed by 3-dummy bytes. The
Device ID bits are then shifted out on the falling edge of CLK with most significant bit (MSB) first as
shown in figure 17. The Device ID values for the W25X10, W25X20, W25X40 AND W25X80 are listed
in Manufacturer and Device Identification table. The Device ID can be read continuously. The
instruction is completed by driving /CS high.
When used to release the device from the power-down state and obtain the Device ID, the instruction
is the same as previously described, and shown in figure 15, except that after /CS is driven high it
must remain high for a time duration of tRES2 (See AC Characteristics). After this time duration the
device will resume normal operation and other instructions will be accepted.
If the Release from Power-down / Device ID instruction is issued while an Erase, Program or Write
cycle is in process (when BUSY equals 1) the instruction is ignored and will not have any effects on
the current cycle
Figure 16. Release Power-down Instruction Sequence
- 27 -
Publication Release Date: September 22, 2006
Preliminary - Revision I
W25X10, W25X20, W25X40, W25X80
Figure 17. Release Power-down / Device ID Instruction Sequence Diagram
- 28 -
W25X10, W25X20, W25X40, W25X80
10.2.16 Read Manufacturer / Device ID (90h)
The Read Manufacturer/Device ID instruction is an alternative to the Release from Power-down /
Device ID instruction that provides both the JEDEC assigned manufacturer ID and the specific device
ID.
The Read Manufacturer/Device ID instruction is very similar to the Release from Power-down / Device
ID instruction. The instruction is initiated by driving the /CS pin low and shifting the instruction code
“90h” followed by a 24-bit address (A23-A0) of 000000h. After which, the Manufacturer ID for Winbond
(EFh) and the Device ID are shifted out on the falling edge of CLK with most significant bit (MSB) first
as shown in figure 18. The Device ID values for the W25X10, W25X20, W25X40 AND W25X80 are
listed in Manufacturer and Device Identification table. If the 24-bit address is initially set to 000001h
the Device ID will be read first and then followed by the Manufacturer ID. The Manufacturer and
Device IDs can be read continuously, alternating from one to the other. The instruction is completed
by driving /CS high.
Figure 18. Read Manufacturer / Device ID Diagram
- 29 -
Publication Release Date: September 22, 2006
Preliminary - Revision I
W25X10, W25X20, W25X40, W25X80
10.2.17 JEDEC ID (9Fh)
For compatibility reasons, the W25X10/20/40/80 provides several instructions to electronically
determine the identity of the device. The Read JEDEC ID instruction is compatible with the JEDEC
standard for SPI compatible serial memories that was adopted in 2003.
The instruction is initiated by driving the /CS pin low and shifting the instruction code “9Fh”. The
JEDEC assigned Manufacturer ID byte for Winbond (EFh) and two Device ID bytes, Memory Type
(ID15-ID8) and Capacity (ID7-ID0) are then shifted out on the falling edge of CLK with most significant
bit (MSB) first as shown in figure 19. For memory type and capacity values refer to Manufacturer and
Device Identification table.
Figure 19. Read JEDEC ID
- 30 -
W25X10, W25X20, W25X40, W25X80
11. ELECTRICAL CHARACTERISTICS (PRELIMINARY) (4)
11.1 Absolute Maximum Ratings (1)
PARAMETERS
SYMBOL
Supply Voltage
VCC
Voltage Applied to Any Pin
VIO
Storage Temperature
TSTG
Lead Temperature
CONDITIONS
RANGE
Relative to Ground
TLEAD
Electrostatic Discharge Voltage
VESD
UNIT
–0.6 to +4.0
V
–0.6 to VCC +0.4
V
–65 to +150
°C
(2)
°C
See Note
Human Body
Model(3)
–2000 to +2000
V
Notes:
1. This device has been designed and tested for the specified operation ranges. Proper operation
outside of these levels is not guaranteed. Exposure beyond absolute maximum ratings (listed
above) may cause permanent damage.
2. Compliant with JEDEC Standard J-STD-20C for small body Sn-Pb or Pb-free (Green) assembly
and the European directive on restrictions on hazardous substances (RoHS) 2002/95/EU.
3. JEDEC Std JESD22-A114A (C1=100 pF, R1=1500 ohms, R2=500 ohms).
4. See preliminary designation at the end of this datasheet.
11.2 Operating Ranges
PARAMETER
Supply
Voltage(1)
Ambient Temperature,
Operating
SYMBOL
VCC
TA
SPEC
CONDITIONS
UNIT
MIN
MAX
FR = 50MHz, fR = 33MHz
2.7
3.6
FR0 = 70MHz, fR = 33MHz
3.0
3.6
FR1 = 75MHz, fR = 33MHz
3.0
3.6
0
+70
–40
+85
Commercial
Industrial
(2)
V
°C
Note:
1.
VCC voltage during Read can operate across the min and max range but should not exceed ±10% of the
programming (erase/write) voltage.
2.
Commercial temperature only applies to Fast Read (FR0 & FR1) and 100K cycles endurance for 4K byte sectors .
Industrial temperature applies to all other parameters.
- 31 -
Publication Release Date: September 22, 2006
Preliminary - Revision I
W25X10, W25X20, W25X40, W25X80
11.3 Endurance and Data Retention
PARAMETER
Erase/Program Cycles
Data Retention
CONDITIONS
MIN
4KB sector, 64KB block or full chip.
Full Temperature Range
MAX
UNIT
100,000
cycles
20
years
11.4 Power-up Timing and Write Inhibit Threshold
PARAMETER
SPEC
SYMBOL
MIN
UNIT
MAX
VCC (min) to /CS Low
tVSL(1)
10
Time Delay Before Write Instruction
tPUW
1
10
ms
Write Inhibit Threshold Voltage
VWI
1
2
V
(1)
(1)
Note:
1. These parameters are characterized only.
Figure 20. Power-up Timing and Voltage Levels
- 32 -
µs
W25X10, W25X20, W25X40, W25X80
11.5 DC Electrical Characteristics
PARAMETER
SYMBOL
SPEC
CONDITIONS
MIN
Input Capacitance
CIN(1)
VIN = 0V(2)
Output Capacitance
Cout
VOUT = 0V
Input Leakage
TYP
UNIT
MAX
6
pf
8
pf
ILI
±2
µA
I/O Leakage
ILO
±2
µA
Standby Current
ICC1
/CS = VCC,
VIN = GND or VCC
25
50
µA
Power-down Current
ICC2
/CS = VCC,
VIN = GND or VCC
<1
10
µA
Current Read Data /
Dual Output Read
ICC3
C = 0.1 VCC / 0.9 VCC
DO = Open
5/8
10/12
mA
ICC3
C = 0.1 VCC / 0.9 VCC
DO = Open
10/10
15/20
mA
ICC3
C = 0.1 VCC / 0.9 VCC
DO = Open
10/15
15/20
mA
ICC3
C = 0.1 VCC / 0.9 VCC
DO = Open
15/20
20/25
mA
Current Page
Program
ICC4
/CS = VCC
20
25
mA
Current Write Status
Register
ICC5
/CS = VCC
8
12
mA
Current Sector/Block
Erase
ICC6
/CS = VCC
20
25
mA
Current Chip Erase
ICC7
/CS = VCC
20
25
mA
Input Low Voltage
VIL
–0.5
VCC x 0.3
V
Input High Voltage
VIH
VCC x0.7
VCC +0.4
V
Output Low Voltage
VOL
IOL = 1.6 mA
0.4
V
Output High Voltage
VOH
IOH = –100 µA
1MHz
(2)
Current Read Data /
Dual Output Read
33MHz
(2)
Current Read Data /
Dual Output Read
50MHz
(2)
Current Read Data /
Dual Output Read
75MHz(2)
(1)
(2)
VCC –0.2
V
Notes:
1. Tested on sample basis and specified through design and characterization data. TA=25° C, VCC 3V.
2. Checker Board Pattern.
- 33 -
Publication Release Date: September 22, 2006
Preliminary - Revision I
W25X10, W25X20, W25X40, W25X80
11.6 AC Measurement Conditions
PARAMETER
SPEC
SYMBOL
MIN
Load Capacitance
30
CL
Load Capacitance for FR1 only
Input Rise and Fall Times
15
TR, TF
Input Pulse Voltages
Input Timing Reference Voltages
Output Timing Reference Voltages
UNIT
MAX
5
pF
ns
VIN
0.2 VCC to 0.8 VCC
V
IN
0.3 VCC to 0.7 VCC
V
OUT
0.5 VCC to 0.5 VCC
V
Note:
1. Output Hi-Z is defined as the point where data out is no longer driven.
Figure 21. AC Measurement I/O Waveform
- 34 -
W25X10, W25X20, W25X40, W25X80
11.7 AC Electrical Characteristics
DESCRIPTION
SYMBOL
SPEC
ALT
MIN
TYP
UNIT
MAX
Clock frequency
for all instructions, except Read Data (03h)
2.7V-3.6V VCC & Industrial Temperature
FR
fC
D.C.
50
MHz
Clock frequency
for all instructions, except Read Data (03h)
3.0V-3.6V VCC & Commercial Temperature
FR0 (4)
fC0
D.C.
70
MHz
Clock frequency, for Fast Read (0Bh, 3Bh) only
3.0V-3.6V VCC & Commercial Temperature
FR1 (4)
fC1
D.C.
75
MHz
fR
D.C.
33
MHz
Clock High, Low Time, for Fast Read (0Bh, 3Bh) /
other instructions except Read Data (03h)
tCLH,
tCLL(1)
6/7
ns
Clock High, Low Time for Read Data (03h)
instruction
tCRLH,
tCRLL(1)
8
ns
Clock Rise Time peak to peak
tCLCH(2)
0.1
V/ns
Clock Fall Time peak to peak
tCHCL(2)
0.1
V/ns
5
ns
5
ns
Clock freq. Read Data instruction 03h
/CS Active Setup Time relative to CLK
tSLCH
/CS Not Active Hold Time relative to CLK
tCHSL
Data In Setup Time
tDVCH
tDSU
2
ns
Data In Hold Time
tCHDX
tDH
5
ns
/CS Active Hold Time relative to CLK
tCHSH
10
ns
/CS Not Active Setup Time relative to CLK
tSHCH
0
ns
/CS Deselect Time
tSHSL
tCSH
100
ns
tSHQZ(2)
tDIS
7
ns
tCLQV
tV
7/6
ns
Output Disable Time
tCSS
Clock Low to Output Valid
W25X10/20/40:
2.7V-3.6V / 3.0V-3.6V
W25X80:
2.7V-3.6V / 3.0V-3.6V
7.5 / 6.5
Output Hold Time
tCLQX
tHO
0
ns
Continued – next page
- 35 -
Publication Release Date: September 22, 2006
Preliminary - Revision I
W25X10, W25X20, W25X40, W25X80
11.8 AC Electrical Characteristics (cont’d)
DESCRIPTION
SYMBOL
SPEC
ALT
MIN
TYP
UNIT
MAX
/HOLD Active Setup Time relative to CLK
tHLCH
5
ns
/HOLD Active Hold Time relative to CLK
tCHHH
5
ns
/HOLD Not Active Setup Time relative to CLK
tHHCH
5
ns
/HOLD Not Active Hold Time relative to CLK
tCHHL
5
ns
/HOLD to Output Low-Z
tHHQX(2)
tLZ
7
ns
/HOLD to Output High-Z
tHLQZ(2)
tHZ
12
ns
Write Protect Setup Time Before /CS Low
tWHSL(3)
20
ns
Write Protect Hold Time After /CS High
tSHWL(3)
100
ns
tDP(2)
3
µs
/CS High to Standby Mode without Electronic
Signature Read
tRES1(2)
3
µs
/CS High to Standby Mode with Electronic
Signature Read
tRES2(2)
1.8
µs
/CS High to Power-down Mode
Write Status Register Time
tW
10
15
ms
Byte Program Time (First Byte) (5)
tBP1
100
150
µs
Additional Byte Program Time (After First Byte) (5)
tBP2
6
12
µs
Page Program Time
tPP
1.5
3
ms
Sector Erase Time (4KB)
tSE
150
300
ms
Block Erase Time (64KB)
tBE
1
2
s
Chip Erase Time W25X10 / W25X20
Chip Erase Time W25X40
Chip Erase Time W25X80
tCE
3
5
10
6
10
20
s
s
s
Notes:
1.
Clock high + Clock low must be less than or equal to 1/fC.
2.
Value guaranteed by design and/or characterization, not 100% tested in production.
3.
Only applicable as a constraint for a Write Status Register instruction when Sector Protect Bit is set to 1.
4.
Commercial temperature only applies to Fast Read (FR0 & FR1). Industrial temperature applies to all other parameters.
5.
For multiple bytes after first byte within a page, tBPN = tBP1 + tBP2 * N (typical) and tBPN = tBP1 + tBP2 * N (max), where N
= number of bytes programmed.
- 36 -
W25X10, W25X20, W25X40, W25X80
11.9 Serial Output Timing
11.10 Input Timing
11.11 Hold Timing
- 37 -
Publication Release Date: September 22, 2006
Preliminary - Revision I
W25X10, W25X20, W25X40, W25X80
12. PACKAGE SPECIFICATION
12.1 8-Pin SOIC 150-mil (Package Code SN)
SYMBOL
A
A1
A2
b
C
D(3)
E
E1(3)
e(2)
L
θ
CP
MILLIMETERS
INCHES
MIN
TYP.
MAX
MIN
1.47
0.10
--0.33
0.19
4.80
5.80
3.80
1.60
--1.45
0.41
0.20
4.85
6.00
3.90
1.27 BSC
0.71
-----
1.72
0.24
--0.50
0.25
4.95
6.19
4.00
0.058
0.004
--0.013
0.0075
0.189
0.228
0.150
1.27
8o
0.10
0.015
0o
---
0.40
0o
---
TYP.
MAX
0.063
0.068
--0.009
0.057
--0.016
0.020
0.008
0.0098
0.191
0.195
0.236
0.244
0.154
0.157
0.050 BSC
0.028
0.050
--8o
--0.004
Notes:
1. Controlling dimensions: inches, unless otherwise specified.
2. BSC = Basic lead spacing between centers.
3. Dimensions D and E1 do not include mold flash protrusions and should be measured from the bottom of the package.
4. Formed leads shall be planar with respect to one another within .0004 inches at the seating plane.
- 38 -
W25X10, W25X20, W25X40, W25X80
12.2 8-Pin SOIC 208-mil (Package Code SS)
SYMBOL
A
A1
A2
b
C
D
E
E1
e
L
θ
y
MILLIMETERS
MIN
MAX
1.75
2.16
0.05
0.25
1.70
1.91
0.35
0.48
0.19
0.25
5.18
5.38
7.70
8.10
5.18
5.38
1.27 BSC
0.50
0.80
8o
0o
--0.10
INCHES
MIN
MAX
0.069
0.085
0.002
0.010
0.067
0.075
0.014
0.019
0.007
0.010
0.204
0.212
0.303
0.319
0.204
0.212
0.050 BSC
0.020
0.031
0o
8o
--0.004
Notes:
1. Controlling dimensions: inches, unless otherwise specified.
2. BSC = Basic lead spacing between centers.
3. Dimensions D and E1 do not include mold flash protrusions and should be measured from the bottom of the package.
4. Formed leads shall be planar with respect to one another within .0004 inches at the seating plane.
- 39 -
Publication Release Date: September 22, 2006
Preliminary - Revision I
W25X10, W25X20, W25X40, W25X80
12.3 8-Pin PDIP 300-mil (Package Code DA)
D
8
5
E1
4
1
B
B
1
E
S
c
A1
A A2
Base Plane
Seating Plane
L
e1
α
Symbol
A
A1
A2
B
B1
c
D
E
E1
e1
L
α
eA
S
Dimension in inch
Min
Nom
Max
Dimension in mm
Min
Nom
0.010
Max
4.45
0.175
0.25
0.125
0.130
0.135
3.18
3.30
3.43
0.016
0.018
0.022
0.41
0.46
0.56
0.058
0.060
0.064
1.47
1.52
1.63
0.008
0.010
0.014
0.20
0.25
0.36
0.360
0.380
9.14
9.65
7.62
7.87
0.300
0.310
7.37
0.245
0.250
0.255
6.22
6.35
6.48
0.090
0.100
0.110
2.29
2.54
2.79
0.120
0.130
0.140
3.05
3.30
3.56
15
0
0.375
8.51
9.02
9.53
0.290
0
0.335
0.355
0.045
15
1.14
- 40 -
eA
W25X10, W25X20, W25X40, W25X80
12.4 8-contact 6x5 WSON
- 41 -
Publication Release Date: September 22, 2006
Preliminary - Revision I
W25X10, W25X20, W25X40, W25X80
12.5 8-contact 6x5 WSON Cont’d.
- 42 -
W25X10, W25X20, W25X40, W25X80
13. ORDERING INFORMATION (1)
Notes:
1a. The Winbond W25X20, W25X40 and W25X80 are fully compatible with the previous Nexflash NX25X20, NX25X40 and
NX25X80 Serial Flash Memories.
1b. Standard bulk shipments are in Tube (shape E).
(shape T), when placing orders.
Please specify alternate packing method, such as Tape and Reel
1c. The “W” prefix is not included on the part marking.
2.
Please check with Winbond for availability.
3.
Only the 2 letter is used for the part marking.
nd
- 43 -
Publication Release Date: September 22, 2006
Preliminary - Revision I
W25X10, W25X20, W25X40, W25X80
REVISION HISTORY
VERSION
DATE
A
06/28/05
B
09/26/05
PAGE
DESCRIPTION
New Create
Updated datasheet to comply with Winbond
Standard
ALL
Updated hex values in Manufacturer and
Device Identification Table. Updated FR and
fr values in Operating Ranges Table and AC
Characteristics Table
C
01/09/06
14, 35
Added availability of 208-mil SOIC package
for W25X40
Added FR1 and change FR from 68MHz to
75MHz.
D
09/26/05
35
Updated FR1
Added W25X10 Specifications.
E
02/13/06
ALL
Added Endurance and Data Retention table
(section 10.3).
Added 8 pin PDIP (300 mil).
F
05/11/06
1-3, 5-7, 31, 34,
35-37, & 40-44
Updated the output load capacitance 15 pF
for FR1 (75 MHz).
Updated temperature range for frequency of
FR1 and added FR0.
Added 6x5 mm WSON package.
G
06/06/06
1-4, 6, 32-36,
41, 42
Updated Endurance and Data Retention
table (11.3), ICC’s in DC Parameter table
(11.5 & 11.6).
Reduced tPP (max) from 5mS to 3mS.
Added byte programming parameters (tBP1 &
tBPn.
Changed tSHCH from 5nS to 0nS.
H
06/22/06
Added additional byte programming
parameter, tBP2 and moved multiple byte
programming tBPn with formula to foot note.
32-36
Corrected Write Enable/Disable text.
I
09/22/06
16, 33, 34 & 43
Change ICC2 from 5uA to 10uA.
Added footnotes in the ordering information
table.
- 44 -
W25X10, W25X20, W25X40, W25X80
Preliminary Designation
The “Preliminary” designation on a Winbond datasheet indicates that the product is not fully
characterized. The specifications are subject to change and are not guaranteed. Winbond or an
authorized sales representative should be consulted for current information before using this product.
Trademarks
Winbond and spiFlash are trademarks of Winbond
Electronics Corporation All other marks are the property of their respective owner.
Important Notice
Winbond products are not designed, intended, authorized or warranted for use as components
in systems or equipment intended for surgical implantation, atomic energy control
instruments, airplane or spaceship instruments, transportation instruments, traffic signal
instruments, combustion control instruments, or for other applications intended to support or
sustain life. Further more, Winbond products are not intended for applications wherein failure
of Winbond products could result or lead to a situation wherein personal injury, death or
severe property or environmental damage could occur.
Winbond customers using or selling these products for use in such applications do so at their
own risk and agree to fully indemnify Winbond for any damages resulting from such improper
use or sales.
The Winbond W25X40 and W25X80 are fully compatible with the previous NexFlash NX25X40 and
NX25X80 Serial Flash memory specifications.
Headquarters
Winbond Electronics Corporation America
Winbond Electronics (Shanghai) Ltd.
No. 4, Creation Rd. III,
Science-Based Industrial Park,
Hsinchu, Taiwan
TEL: 886-3-5770066
FAX: 886-3-5665577
http://www.winbond.com.tw/
2727 North First Street, San Jose,
CA 95134, U.S.A.
TEL: 1-408-9436666
FAX: 1-408-5441798
27F, 2299 Yan An W. Rd. Shanghai,
200336 China
TEL: 86-21-62365999
FAX: 86-21-62365998
Taipei Office
Winbond Electronics Corporation Japan
Winbond Electronics (H.K.) Ltd.
9F, No.480, Rueiguang Rd.,
Neihu District, Taipei, 114,
Taiwan, R.O.C.
TEL: 886-2-8177-7168
FAX: 886-2-8751-3579
7F Daini-ueno BLDG, 3-7-18
Shinyokohama Kohoku-ku,
Yokohama, 222-0033
TEL: 81-45-4781881
FAX: 81-45-4781800
Unit 9-15, 22F, Millennium City,
No. 378 Kwun Tong Rd.,
Kowloon, Hong Kong
TEL: 852-27513100
FAX: 852-27552064
Please note that all data and specifications are subject to change without notice.
All the trademarks of products and companies mentioned in this datasheet belong to their respective owners.
- 45 -
Publication Release Date: September 22, 2006
Preliminary - Revision I