NZT749 NZT749 PNP Current Driver Transistor 4 • This device is designed for power amplifier, regulator and switching circuit where speed is important. • Sourced from process 5P. 3 2 1 SOT-223 1. Base 2, 4. Collector 3. Emitter Absolute Maximum Ratings* Ta=25°C unless otherwise noted Symbol VCEO Collector-Emitter Voltage Parameter Value -25 Units V VCBO VEBO Collector-Base Voltage -35 V Emitter-Base Voltage -5.0 IC Collector Current (DC) V -4.0 A TJ, TSTG Operating and Storage Junction Temperature Range - 55 ~ 150 °C - Continuous * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations Electrical Characteristics Ta=25°C unless otherwise noted Symbol Off Characteristics Parameter Test Condition Min. Max. Units V(BR)CEO Collector-Emitter Voltage IC = -10mA, IB = 0 -25 V V(BR)CBO Collector-Base Voltage IC = -100µA, IE = 0 -35 V V(BR)EBO Emitter-Base Voltage IE = -10µA, IC = 0 -5.0 ICBO Collector Cut-off Current VCB = -30V, IE = 0 -100 nA IEBO Emitter Cut-off Current VEB = -4V, IC = 0 -0.1 µA V On Characteristics * hFE DC Current Gain VCE = -2.0V, IC = -50mA VCE = -2.0V, IC = -1.0A VCE = -2.0V, IC = -2.0A 70 80 65 300 VCE(sat) Collector-Emitter Saturation Voltage IC = -1.0A, IB = -100mA -0.3 VBE(sat) Base-Emitter Saturation Voltage IC = -1.0A, IB = -100mA -1.25 V V VBE(on) Base-Emitter On Voltage IC = -1.0A, VCE = -2.0V -1.0 V Small Signal Characteristics fT Current gain Bandwidth Product VCE = -5.0V, IC = -50mA f = 100MHz 75 MHz * Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0% Thermal Characteristics Ta=25°C unless otherwise noted Symbol PD Parameter Total Device Dissipation Derate above 25°C Max. 1.2 9.7 Units W mW/°C RθJA Thermal Resistance, Junction to Ambient 103 °C/W ©2004 Fairchild Semiconductor Corporation Rev. A, July 2004 NZT749 Package Dimensions 3.00 ±0.10 4.60 ±0.25 6.50 ±0.20 (0.89) (0.95) (0.46) 1.60 ±0.20 2.30 TYP 7.00 ±0.30 (0.60) 0.70 ±0.10 (0.95) +0.04 0.06 –0.02 (0.60) 3.50 ±0.20 1.75 ±0.20 MAX1.80 0.65 ±0.20 0.08MAX SOT-223 ° 10 +0.10 0.25 –0.05 0°~ Dimensions in Millimeters ©2004 Fairchild Semiconductor Corporation Rev. A, July 2004 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ ActiveArray™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FAST® FASTr™ FPS™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2004 Fairchild Semiconductor Corporation Rev. I11