Data Sheet No. PD60163-P IR2109(4) (S) HALF-BRIDGE DRIVER Features • Floating channel designed for bootstrap operation • • • • • • • • • • Fully operational to +600V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V Undervoltage lockout for both channels 3.3V, 5V and 15V input logic compatible Cross-conduction prevention logic Matched propagation delay for both channels High side output in phase with IN input Logic and power ground +/- 5V offset. Internal 540ns dead-time, and programmable up to 5us with one external RDT resistor (IR21094) Lower di/dt gate driver for better noise immunity Shut down input turns off both channels. Product Summary VOFFSET IO+/VOUT ton/off (typ.) Dead Time 600V max. 120 mA / 250 mA 10 - 20V 750 & 200 ns 540 ns (programmable up to 5uS for IR21094) Packages Description 14 Lead SOIC The IR2109(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and 8 Lead SOIC low side referenced output channels. Proprietary HVIC 14 Lead PDIP and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, 8 Lead PDIP down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts. Typical Connection up to 600V VCC VCC VB IN IN HO SD SD VS COM LO TO LOAD up to 600V IR21094 IR2109 (Refer to Lead Assignments for correct configuration). This/These diagram(s) show electrical connections only. Please refer to our Application Notes and DesignTips for proper circuit board layout. www.irf.com HO V CC V CC VB IN IN VS SD SD TO LOAD DT V SS RDT V SS COM LO 1 IR2109(4) (S) Absolute Maximum Ratings Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Symbol Definition Min. Units VB High side floating absolute voltage -0.3 625 VS High side floating supply offset voltage VB - 25 VB + 0.3 VHO High side floating output voltage VS - 0.3 VB + 0.3 VCC Low side and logic fixed supply voltage -0.3 25 VLO Low side output voltage -0.3 VCC + 0.3 DT Programmable dead-time pin voltage (IR21094 only) VSS - 0.3 VCC + 0.3 VIN Logic input voltage (IN & SD) VSS - 0.3 VCC + 0.3 VSS Logic ground (IR21094/IR21894 only) VCC - 25 VCC + 0.3 dVS/dt PD Allowable offset supply voltage transient Package power dissipation @ TA ≤ +25°C — 50 — 1.0 (8 Lead SOIC) — 0.625 (14 lead PDIP) — 1.6 — 1.0 (8 Lead PDIP) — 125 (8 Lead SOIC) — 200 (14 lead PDIP) — 75 (14 lead SOIC) (8 Lead PDIP) (14 lead SOIC) RthJA 2 Max. Thermal resistance, junction to ambient — 120 TJ Junction temperature — 150 TS Storage temperature -50 150 TL Lead temperature (soldering, 10 seconds) — 300 V V/ns W °C/W °C www.irf.com IR2109(4) (S) Recommended Operating Conditions The input/output logic timing diagram is shown in figure 1. For proper operation the device should be used within the recommended conditions. The VS and VSS offset rating are tested with all supplies biased at 15V differential. Symbol Definition VB High side floating supply absolute voltage VS High side floating supply offset voltage Min. Max. VS + 10 VS + 20 Note 1 600 VHO High side floating output voltage VS VB VCC Low side and logic fixed supply voltage 10 20 VLO Low side output voltage 0 VCC VIN Logic input voltage (IN & SD) VSS VCC DT Programmable dead-time pin voltage (IR21094 only) VSS VCC VSS Logic ground (IR21094 only) -5 5 Ambient temperature -40 125 TA Units V °C Note 1: Logic operational for VS of -5 to +600V. Logic state held for VS of -5V to -VBS. (Please refer to the Design Tip DT97-3 for more details). Dynamic Electrical Characteristics VBIAS (V CC, VBS) = 15V, VSS = COM, CL = 1000 pF, TA = 25°C, DT = VSS unless otherwise specified. Symbol Min. Typ. ton Turn-on propagation delay — 750 950 VS = 0V toff tsd Turn-off propagation delay — 200 280 VS = 0V or 600V Shut-down propagation delay Delay matching, HS & LS turn-on/off — 200 280 — 0 70 tr Turn-on rise time — 150 220 VS = 0V tf Turn-off fall time — 50 80 VS = 0V Deadtime: LO turn-off to HO turn-on(DT LO-HO) & HO turn-off to LO turn-on (DTHO-LO) 400 4 540 5 680 6 Deadtime matching = DTLO - HO - DTHO-LO — 0 60 — 0 600 MT DT MDT www.irf.com Definition Max. Units Test Conditions nsec usec nsec RDT= 0 RDT = 200k (IR21094) RDT=0 RDT = 200k (IR21094) 3 IR2109(4) (S) Static Electrical Characteristics VBIAS (VCC , VBS) = 15V, VSS = COM, DT= VSS and TA = 25°C unless otherwise specified. The VIL, VIH and IIN parameters are referenced to VSS /COM and are applicable to the respective input leads: IN and SD. The VO, IO and Ron parameters are referenced to COM and are applicable to the respective output leads: HO and LO. Symbol Definition VIH Logic “1” input voltage for HO & logic “0” for LO VIL Min. Typ. Max. Units Test Conditions 2.9 — — VCC = 10V to 20V Logic “0” input voltage for HO & logic “1” for LO — — 0.8 VCC = 10V to 20V SD input positive going threshold 2.9 — — SD input negative going threshold — — 0.8 VOH High level output voltage, VBIAS - VO — 0.8 1.4 IO = 20 mA VOL Low level output voltage, VO — 0.3 0.6 IO = 20 mA VSD,TH+ VSD,TH- ILK Offset supply leakage current — — 50 IQBS Quiescent VBS supply current 20 60 150 IQCC Quiescent VCC supply current 0.4 1.0 1.6 IIN+ Logic “1” input bias current — 5 20 IIN- Logic “0” input bias current — 1 2 VCC and VBS supply undervoltage positive going 8.0 8.9 9.8 7.4 8.2 9.0 0.3 0.7 — V µA mA VCC = 10V to 20V VCC = 10V to 20V VB = VS = 600V VIN = 0V or 5V VIN = 0V or 5V RDT = 0 VCCUV+ VBSUV+ VCCUV- IN = 5V, SD = 0V µA IN = 0V, SD = 5V threshold VCC and VBS supply undervoltage negative going VBSUV- threshold VCCUVH Hysteresis V VBSUVH 4 IO+ Output high short circuit pulsed vurrent 120 200 — IO- Output low short circuit pulsed current 250 350 — mA VO = 0V, PW ≤ 10 µs VO = 15V,PW ≤ 10 µs www.irf.com IR2109(4) (S) Functional Block Diagrams VB IR2109 UV DETECT HO R VSS/COM LEVEL SHIFT IN HV LEVEL SHIFTER Q R PULSE FILTER S VS PULSE GENERATOR VCC DEADTIME UV DETECT +5V VSS/COM LEVEL SHIFT SD LO DELAY COM VB IR21094 UV DETECT HO R VSS/COM LEVEL SHIFT IN HV LEVEL SHIFTER R PULSE FILTER S VS PULSE GENERATOR VCC DEADTIME DT UV DETECT +5V SD Q VSS/COM LEVEL SHIFT DELAY LO COM VSS www.irf.com 5 IR2109(4) (S) Lead Definitions Symbol Description IN Logic input for high and low side gate driver outputs (HO and LO), in phase with HO (referenced to COM for IR2109 and VSS for IR21094) Logic input for shutdown (referenced to COM for IR2109 and VSS for IR21094) SD DT Programmable dead-time lead, referenced to VSS. (IR21094 only) VSS Logic Ground (21094 only) VB High side floating supply HO High side gate drive output VS High side floating supply return VCC Low side and logic fixed supply LO Low side gate drive output COM Low side return Lead Assignments VCC 1 8 1 VCC VB 8 2 IN HO 7 2 IN HO 7 3 SD VS 6 3 SD VS 6 COM LO COM LO 5 4 1 5 4 8 Lead PDIP 8 Lead SOIC IR2109 IR2109S 14 VCC 1 14 VCC IN VB 13 12 11 IN VB 13 3 SD HO 12 3 SD HO 4 DT VS 11 4 DT VS 5 VSS 10 5 VSS 10 6 COM 9 6 COM 9 LO 8 7 LO 8 2 7 6 VB 2 14 Lead PDIP 14 Lead SOIC IR21094 IR21094S www.irf.com IR2109(4) (S) Case Outlines 01-6014 01-3003 01 (MS-001AB) 8 Lead PDIP D DIM B 5 A F OOT PRINT 6 8 7 6 5 H E 0.25 [.010] 1 2 3 A 4 6.46 [.255] MIN .0532 .0688 1.35 1.75 A1 .0040 3X 1.27 [.050] 8X 1.78 [.070] e1 MAX .0098 0.10 0.25 b .013 .020 0.33 0.51 c .0075 .0098 0.19 0.25 D .189 .1968 4.80 5.00 E .1497 .1574 3.80 4.00 e .050 BAS IC 1.27 BAS IC .025 BAS IC 0.635 BAS IC e1 6X e MILLIMETERS MAX A 8X 0.72 [.028] INCHES MIN H .2284 .2440 5.80 6.20 K .0099 .0196 0.25 0.50 L .016 .050 0.40 1.27 y 0° 8° 0° 8° K x 45° A C y 0.10 [.004] 8X b 0.25 [.010] A1 8X L C A B NOT ES: 1. DIMENS IONING & T OLERANCING PE R ASME Y14.5M-1994. 2. CONT ROLLING DIMENSION: MILLIMET ER 3. DIMENS IONS ARE SHOWN IN MILLIME TE RS [INCHES]. 4. OUT LINE CONF ORMS T O JEDEC OUTLINE MS-012AA. 8 Lead SOIC www.irf.com 8X c 7 5 DIMENSION DOES NOT INCLUDE MOLD PROT RUS IONS. MOLD PROTRUSIONS NOT T O E XCEED 0.15 [.006]. 6 DIMENSION DOES NOT INCLUDE MOLD PROT RUS IONS. MOLD PROTRUSIONS NOT T O E XCEED 0.25 [.010]. 7 DIMENSION IS T HE LE NGTH OF LEAD FOR SOLDE RING TO A SUBS TRAT E. 01-6027 01-0021 11 (MS-012AA) 7 IR2109(4) (S) 14 Lead PDIP 14 Lead SOIC (narrow body) 8 01-6010 01-3002 03 (MS-001AC) 01-6019 01-3063 00 (MS-012AB) www.irf.com IR2109(4) (S) IN(LO) IN 50% 50% SD IN(HO) ton toff tr 90% HO LO HO LO Figure 1. Input/Output Timing Diagram tf 90% 10% 10% Figure 2. Switching Time Waveform Definitions SD 50% 50% 50% IN tsd HO LO 90% 90% HO LO Figure 3. Shutdown Waveform Definitions DT LO-HO 10% DT HO-LO 90% 10% IN (LO) 50% MDT= 50% DT LO-HO - DT HO-LO IN (HO) Figure 4. Deadtime Waveform Definitions LO HO 10% MT MT 90% LO HO Figure 5. Delay Matching Waveform Definitions IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105 Data and specifications subject to change without notice. 5/18/2001 www.irf.com 9